SG11201507705TA - Pattern forming method - Google Patents

Pattern forming method

Info

Publication number
SG11201507705TA
SG11201507705TA SG11201507705TA SG11201507705TA SG11201507705TA SG 11201507705T A SG11201507705T A SG 11201507705TA SG 11201507705T A SG11201507705T A SG 11201507705TA SG 11201507705T A SG11201507705T A SG 11201507705TA SG 11201507705T A SG11201507705T A SG 11201507705TA
Authority
SG
Singapore
Prior art keywords
forming method
pattern forming
pattern
forming
Prior art date
Application number
SG11201507705TA
Inventor
Shinya Morikita
Eiichi Nishimura
Fumiko Yamashita
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG11201507705TA publication Critical patent/SG11201507705TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02351—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0147—Film patterning
    • B81C2201/0149—Forming nanoscale microstructures using auto-arranging or self-assembling material
SG11201507705TA 2013-04-16 2014-04-09 Pattern forming method SG11201507705TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013085940A JP6029522B2 (en) 2013-04-16 2013-04-16 Method for forming a pattern
PCT/JP2014/060307 WO2014171377A1 (en) 2013-04-16 2014-04-09 Method for forming pattern

Publications (1)

Publication Number Publication Date
SG11201507705TA true SG11201507705TA (en) 2015-10-29

Family

ID=51731320

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201507705TA SG11201507705TA (en) 2013-04-16 2014-04-09 Pattern forming method

Country Status (8)

Country Link
US (1) US9412618B2 (en)
EP (1) EP2975633B1 (en)
JP (1) JP6029522B2 (en)
KR (1) KR102113278B1 (en)
CN (1) CN105051870B (en)
SG (1) SG11201507705TA (en)
TW (1) TWI594320B (en)
WO (1) WO2014171377A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2823975T3 (en) 2010-10-27 2021-05-11 Rize Inc Process and apparatus for the manufacture of three-dimensional objects
US9733566B2 (en) 2015-03-17 2017-08-15 Tokyo Electron Limited Spin-on layer for directed self assembly with tunable neutrality
CN105845553B (en) * 2016-04-01 2018-06-01 江苏大学 The preparation method of graphene field effect transistor array based on silicon carbide substrates
CN108231984A (en) * 2018-01-31 2018-06-29 华南理工大学 Perovskite patterning diaphragm that a kind of phase separation means are realized and preparation method thereof
CN116837349A (en) * 2018-07-26 2023-10-03 东京毅力科创株式会社 Plasma processing apparatus

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5079600A (en) * 1987-03-06 1992-01-07 Schnur Joel M High resolution patterning on solid substrates
JPH0224661A (en) * 1988-07-14 1990-01-26 Fujitsu Ltd Formation of resist pattern
EP3242318A1 (en) * 2003-12-19 2017-11-08 The University of North Carolina at Chapel Hill Monodisperse micro-structure or nano-structure product
US20060163744A1 (en) * 2005-01-14 2006-07-27 Cabot Corporation Printable electrical conductors
JP4827081B2 (en) * 2005-12-28 2011-11-30 東京エレクトロン株式会社 Plasma etching method and computer-readable storage medium
US7347953B2 (en) 2006-02-02 2008-03-25 International Business Machines Corporation Methods for forming improved self-assembled patterns of block copolymers
JP4421582B2 (en) * 2006-08-15 2010-02-24 株式会社東芝 Pattern formation method
KR101414125B1 (en) * 2006-10-12 2014-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 A method for manufacturing a semiconductor device, and an etching apparatus
US8343578B2 (en) * 2006-10-30 2013-01-01 International Business Machines Corporation Self-assembled lamellar microdomains and method of alignment
US7923373B2 (en) * 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
JP5578782B2 (en) * 2008-03-31 2014-08-27 東京エレクトロン株式会社 Plasma processing method and computer-readable storage medium
JP5171683B2 (en) * 2009-02-18 2013-03-27 東京エレクトロン株式会社 Plasma processing method
US8114306B2 (en) 2009-05-22 2012-02-14 International Business Machines Corporation Method of forming sub-lithographic features using directed self-assembly of polymers
JP5318217B2 (en) * 2009-09-28 2013-10-16 株式会社東芝 Pattern formation method
US9373521B2 (en) 2010-02-24 2016-06-21 Tokyo Electron Limited Etching processing method
JP5662079B2 (en) 2010-02-24 2015-01-28 東京エレクトロン株式会社 Etching method
JP5893864B2 (en) * 2011-08-02 2016-03-23 東京エレクトロン株式会社 Plasma etching method
CN102983065B (en) * 2011-09-06 2015-12-16 中芯国际集成电路制造(北京)有限公司 Pattern, mask pattern forming method and method, semi-conductor device manufacturing method
KR20130034778A (en) * 2011-09-29 2013-04-08 주식회사 동진쎄미켐 Method of forming fine pattern of semiconductor device using directed self assembly process
JP5973763B2 (en) * 2012-03-28 2016-08-23 東京エレクトロン株式会社 Method and apparatus for forming periodic patterns using self-organizable block copolymers

Also Published As

Publication number Publication date
JP6029522B2 (en) 2016-11-24
KR102113278B1 (en) 2020-05-21
US9412618B2 (en) 2016-08-09
JP2014209514A (en) 2014-11-06
WO2014171377A1 (en) 2014-10-23
KR20150143435A (en) 2015-12-23
EP2975633A4 (en) 2016-10-26
TWI594320B (en) 2017-08-01
CN105051870B (en) 2017-03-29
TW201507023A (en) 2015-02-16
US20160042970A1 (en) 2016-02-11
EP2975633B1 (en) 2019-09-11
CN105051870A (en) 2015-11-11
EP2975633A1 (en) 2016-01-20

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