KR101882155B1 - 기판 처리 장치 - Google Patents

기판 처리 장치 Download PDF

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Publication number
KR101882155B1
KR101882155B1 KR1020177027431A KR20177027431A KR101882155B1 KR 101882155 B1 KR101882155 B1 KR 101882155B1 KR 1020177027431 A KR1020177027431 A KR 1020177027431A KR 20177027431 A KR20177027431 A KR 20177027431A KR 101882155 B1 KR101882155 B1 KR 101882155B1
Authority
KR
South Korea
Prior art keywords
processing apparatus
substrate processing
substrate
processing
Prior art date
Application number
KR1020177027431A
Other languages
English (en)
Other versions
KR20170129789A (ko
Inventor
히로후미 쇼모리
아츠오 기무라
Original Assignee
가부시키가이샤 제이.이.티.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 제이.이.티. filed Critical 가부시키가이샤 제이.이.티.
Publication of KR20170129789A publication Critical patent/KR20170129789A/ko
Application granted granted Critical
Publication of KR101882155B1 publication Critical patent/KR101882155B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/102—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration with means for agitating the liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Cleaning By Liquid Or Steam (AREA)
KR1020177027431A 2015-06-15 2016-06-13 기판 처리 장치 KR101882155B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2015-120309 2015-06-15
JP2015120309 2015-06-15
PCT/JP2016/067492 WO2016204106A1 (ja) 2015-06-15 2016-06-13 基板処理装置

Publications (2)

Publication Number Publication Date
KR20170129789A KR20170129789A (ko) 2017-11-27
KR101882155B1 true KR101882155B1 (ko) 2018-07-25

Family

ID=57546540

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020177027431A KR101882155B1 (ko) 2015-06-15 2016-06-13 기판 처리 장치

Country Status (7)

Country Link
US (1) US10615059B2 (ko)
JP (1) JP6231249B2 (ko)
KR (1) KR101882155B1 (ko)
CN (1) CN107710388B (ko)
SG (1) SG11201710129RA (ko)
TW (1) TWI685893B (ko)
WO (1) WO2016204106A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112868090A (zh) * 2019-09-12 2021-05-28 铠侠股份有限公司 基板处理装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3214503B2 (ja) 1990-11-28 2001-10-02 東京エレクトロン株式会社 洗浄装置
JP3343033B2 (ja) * 1996-06-28 2002-11-11 大日本スクリーン製造株式会社 基板処理装置
US6045624A (en) * 1996-09-27 2000-04-04 Tokyo Electron Limited Apparatus for and method of cleaning objects to be processed
JP3171807B2 (ja) * 1997-01-24 2001-06-04 東京エレクトロン株式会社 洗浄装置及び洗浄方法
JPH11145105A (ja) * 1997-11-13 1999-05-28 Tokyo Electron Ltd 洗浄装置
US6352083B1 (en) * 1997-11-20 2002-03-05 Dainippon Screen Mfg. Co., Ltd. Substrate treating apparatus and substrate treating method
JP2002028592A (ja) * 2000-07-17 2002-01-29 Shimada Phys & Chem Ind Co Ltd 洗浄装置
JP2002134467A (ja) * 2000-10-26 2002-05-10 Daikin Ind Ltd 基板処理装置
TW529041B (en) * 2000-12-21 2003-04-21 Toshiba Corp Chemical decontamination method and treatment method and apparatus of chemical decontamination solution
JP4403177B2 (ja) * 2004-04-15 2010-01-20 東京エレクトロン株式会社 液処理装置および液処理方法
JP2006108512A (ja) * 2004-10-07 2006-04-20 Ses Co Ltd 基板処理装置
DE102005015758A1 (de) * 2004-12-08 2006-06-14 Astec Halbleitertechnologie Gmbh Verfahren und Vorrichtung zum Ätzen von in einer Ätzlösung aufgenommenen Substraten
US20060157197A1 (en) * 2005-01-18 2006-07-20 Tadashi Maegawa Substrate processing apparatus
JP2006310767A (ja) * 2005-03-28 2006-11-09 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2007012859A (ja) * 2005-06-30 2007-01-18 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2007208223A (ja) * 2006-02-06 2007-08-16 Sharp Corp ウェットエッチング装置およびウェットエッチング方法
TWI406330B (zh) 2007-09-26 2013-08-21 Dainippon Screen Mfg 基板處理裝置及基板處理方法
JP5016430B2 (ja) * 2007-09-26 2012-09-05 大日本スクリーン製造株式会社 基板処理装置
JP2009081257A (ja) * 2007-09-26 2009-04-16 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2009231579A (ja) * 2008-03-24 2009-10-08 Dainippon Screen Mfg Co Ltd 基板処理装置及び基板処理方法
JP2013070022A (ja) * 2011-09-06 2013-04-18 Dainippon Screen Mfg Co Ltd 基板処理装置及び基板処理方法
US20160303622A1 (en) * 2013-10-23 2016-10-20 Brooks Ccs Gmbh Cleaning Systems and Methods for Semiconductor Substrate Storage Articles

Also Published As

Publication number Publication date
TW201717274A (zh) 2017-05-16
CN107710388A (zh) 2018-02-16
US10615059B2 (en) 2020-04-07
JPWO2016204106A1 (ja) 2017-11-30
TWI685893B (zh) 2020-02-21
US20180190515A1 (en) 2018-07-05
KR20170129789A (ko) 2017-11-27
CN107710388B (zh) 2021-08-24
WO2016204106A1 (ja) 2016-12-22
JP6231249B2 (ja) 2017-11-15
SG11201710129RA (en) 2018-01-30

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Date Code Title Description
A201 Request for examination
A302 Request for accelerated examination
AMND Amendment
AMND Amendment
E601 Decision to refuse application
AMND Amendment
X701 Decision to grant (after re-examination)
GRNT Written decision to grant