KR101870586B1 - 기판 반송 기구, 기판 재치 기구, 성막 장치 및 그 방법 - Google Patents

기판 반송 기구, 기판 재치 기구, 성막 장치 및 그 방법 Download PDF

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KR101870586B1
KR101870586B1 KR1020170179129A KR20170179129A KR101870586B1 KR 101870586 B1 KR101870586 B1 KR 101870586B1 KR 1020170179129 A KR1020170179129 A KR 1020170179129A KR 20170179129 A KR20170179129 A KR 20170179129A KR 101870586 B1 KR101870586 B1 KR 101870586B1
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South Korea
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substrate
supporting portion
supporting
pressing
support
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KR1020170179129A
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English (en)
Korean (ko)
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히로시 이시이
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캐논 톡키 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H01L51/56—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • H01L51/0008—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
KR1020170179129A 2017-05-22 2017-12-26 기판 반송 기구, 기판 재치 기구, 성막 장치 및 그 방법 KR101870586B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017101235A JP6468540B2 (ja) 2017-05-22 2017-05-22 基板搬送機構、基板載置機構、成膜装置及びそれらの方法
JPJP-P-2017-101235 2017-05-22

Publications (1)

Publication Number Publication Date
KR101870586B1 true KR101870586B1 (ko) 2018-06-22

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KR1020170179129A KR101870586B1 (ko) 2017-05-22 2017-12-26 기판 반송 기구, 기판 재치 기구, 성막 장치 및 그 방법

Country Status (3)

Country Link
JP (1) JP6468540B2 (zh)
KR (1) KR101870586B1 (zh)
CN (1) CN108677158B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113646957A (zh) * 2019-04-10 2021-11-12 Lg电子株式会社 二次电池单元堆叠装置和包括该装置的制造系统

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7269000B2 (ja) * 2018-12-26 2023-05-08 キヤノントッキ株式会社 基板載置方法、成膜方法、成膜装置、および有機ｅｌパネルの製造システム
CN113490762A (zh) 2019-03-15 2021-10-08 应用材料公司 沉积掩模、及制造和使用沉积掩模的方法
US11189516B2 (en) 2019-05-24 2021-11-30 Applied Materials, Inc. Method for mask and substrate alignment
US11538706B2 (en) 2019-05-24 2022-12-27 Applied Materials, Inc. System and method for aligning a mask with a substrate
WO2020251696A1 (en) 2019-06-10 2020-12-17 Applied Materials, Inc. Processing system for forming layers
US10916464B1 (en) 2019-07-26 2021-02-09 Applied Materials, Inc. Method of pre aligning carrier, wafer and carrier-wafer combination for throughput efficiency
KR20210053761A (ko) * 2019-11-04 2021-05-12 캐논 톡키 가부시키가이샤 성막 장치 및 성막 방법
JP7344236B2 (ja) * 2021-02-08 2023-09-13 キヤノントッキ株式会社 搬送装置、成膜装置及び制御方法

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JP3940823B2 (ja) * 1994-12-26 2007-07-04 株式会社ニコン ステージ装置及びその制御方法
JP2008251754A (ja) * 2007-03-29 2008-10-16 Nikon Corp 基板搬送方法及び装置、並びに露光方法及び装置
JP2009277655A (ja) 2008-05-15 2009-11-26 Samsung Mobile Display Co Ltd 有機電界発光表示装置の製造装置及び製造方法
KR20120111987A (ko) * 2011-03-29 2012-10-11 가부시키가이샤 히다치 하이테크놀로지즈 증착 방법 및 증착 장치
JP5052753B2 (ja) * 2005-02-16 2012-10-17 芝浦メカトロニクス株式会社 基板反転装置および基板製造装置
JP2016154266A (ja) * 2009-12-16 2016-08-25 株式会社ニコン 基板搬送方法、デバイス製造方法及び基板搬送装置

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JP4609757B2 (ja) * 2005-02-23 2011-01-12 三井造船株式会社 成膜装置における基板装着方法
WO2007026852A1 (en) * 2005-08-29 2007-03-08 Ebara Corporation Substrate processing unit, substrate transfer method, substrate cleansing process unit, and substrate plating apparatus
JP4773834B2 (ja) * 2006-02-03 2011-09-14 キヤノン株式会社 マスク成膜方法およびマスク成膜装置
WO2010106958A1 (ja) * 2009-03-18 2010-09-23 株式会社アルバック 位置合わせ方法、蒸着方法
JP5206528B2 (ja) * 2009-03-19 2013-06-12 トヨタ自動車株式会社 ワーク搬送用機器およびワーク搬送方法
JP2011073875A (ja) * 2009-10-02 2011-04-14 Sharp Corp 搬送方法
JP2011125967A (ja) * 2009-12-18 2011-06-30 Hitachi High-Tech Control Systems Corp ウェーハ搬送ロボット用のハンド、ウェーハ搬送ロボット及びウェーハ搬送装置
JP5079114B2 (ja) * 2010-03-30 2012-11-21 住友化学株式会社 基板搬送機構および偏光フィルムの貼合装置における基板支持装置
JP5506921B2 (ja) * 2010-04-28 2014-05-28 株式会社アルバック 真空処理装置並びに基板とアラインメントマスクの移動方法及び位置合わせ方法並びに成膜方法
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Publication number Priority date Publication date Assignee Title
JP3940823B2 (ja) * 1994-12-26 2007-07-04 株式会社ニコン ステージ装置及びその制御方法
JP5052753B2 (ja) * 2005-02-16 2012-10-17 芝浦メカトロニクス株式会社 基板反転装置および基板製造装置
JP2008251754A (ja) * 2007-03-29 2008-10-16 Nikon Corp 基板搬送方法及び装置、並びに露光方法及び装置
JP2009277655A (ja) 2008-05-15 2009-11-26 Samsung Mobile Display Co Ltd 有機電界発光表示装置の製造装置及び製造方法
JP2016154266A (ja) * 2009-12-16 2016-08-25 株式会社ニコン 基板搬送方法、デバイス製造方法及び基板搬送装置
KR20120111987A (ko) * 2011-03-29 2012-10-11 가부시키가이샤 히다치 하이테크놀로지즈 증착 방법 및 증착 장치

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113646957A (zh) * 2019-04-10 2021-11-12 Lg电子株式会社 二次电池单元堆叠装置和包括该装置的制造系统
CN113646957B (zh) * 2019-04-10 2023-10-10 Lg电子株式会社 二次电池单元堆叠装置和包括该装置的制造系统

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JP2018197362A (ja) 2018-12-13
CN108677158A (zh) 2018-10-19
CN108677158B (zh) 2020-09-25

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