JP6468540B2 - 基板搬送機構、基板載置機構、成膜装置及びそれらの方法 - Google Patents

基板搬送機構、基板載置機構、成膜装置及びそれらの方法 Download PDF

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Publication number
JP6468540B2
JP6468540B2 JP2017101235A JP2017101235A JP6468540B2 JP 6468540 B2 JP6468540 B2 JP 6468540B2 JP 2017101235 A JP2017101235 A JP 2017101235A JP 2017101235 A JP2017101235 A JP 2017101235A JP 6468540 B2 JP6468540 B2 JP 6468540B2
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Japan
Prior art keywords
substrate
support
support portion
pressing
mounting
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JP2017101235A
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Japanese (ja)
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JP2018197362A (ja
Inventor
石井　博
石井　　博
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Canon Tokki Corp
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Canon Tokki Corp
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Priority to JP2017101235A priority Critical patent/JP6468540B2/ja
Priority to KR1020170179129A priority patent/KR101870586B1/ko
Priority to CN201810485118.6A priority patent/CN108677158B/zh
Publication of JP2018197362A publication Critical patent/JP2018197362A/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Robotics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
JP2017101235A 2017-05-22 2017-05-22 基板搬送機構、基板載置機構、成膜装置及びそれらの方法 Active JP6468540B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017101235A JP6468540B2 (ja) 2017-05-22 2017-05-22 基板搬送機構、基板載置機構、成膜装置及びそれらの方法
KR1020170179129A KR101870586B1 (ko) 2017-05-22 2017-12-26 기판 반송 기구, 기판 재치 기구, 성막 장치 및 그 방법
CN201810485118.6A CN108677158B (zh) 2017-05-22 2018-05-21 基板搬送机构、基板载置机构、成膜装置及其方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017101235A JP6468540B2 (ja) 2017-05-22 2017-05-22 基板搬送機構、基板載置機構、成膜装置及びそれらの方法

Publications (2)

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JP2018197362A JP2018197362A (ja) 2018-12-13
JP6468540B2 true JP6468540B2 (ja) 2019-02-13

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Country Status (3)

Country Link
JP (1) JP6468540B2 (zh)
KR (1) KR101870586B1 (zh)
CN (1) CN108677158B (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10916464B1 (en) 2019-07-26 2021-02-09 Applied Materials, Inc. Method of pre aligning carrier, wafer and carrier-wafer combination for throughput efficiency
US11189516B2 (en) 2019-05-24 2021-11-30 Applied Materials, Inc. Method for mask and substrate alignment
US11414740B2 (en) 2019-06-10 2022-08-16 Applied Materials, Inc. Processing system for forming layers
US11538706B2 (en) 2019-05-24 2022-12-27 Applied Materials, Inc. System and method for aligning a mask with a substrate
US11631813B2 (en) 2019-03-15 2023-04-18 Applied Materials, Inc. Deposition mask and methods of manufacturing and using a deposition mask

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7269000B2 (ja) * 2018-12-26 2023-05-08 キヤノントッキ株式会社 基板載置方法、成膜方法、成膜装置、および有機ｅｌパネルの製造システム
WO2020209502A1 (ko) * 2019-04-10 2020-10-15 엘지전자 주식회사 이차전지의 셀 적층장치 및 이를 포함하는 제조 시스템
KR20210053761A (ko) * 2019-11-04 2021-05-12 캐논 톡키 가부시키가이샤 성막 장치 및 성막 방법
JP7344236B2 (ja) * 2021-02-08 2023-09-13 キヤノントッキ株式会社 搬送装置、成膜装置及び制御方法

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JP3940823B2 (ja) * 1994-12-26 2007-07-04 株式会社ニコン ステージ装置及びその制御方法
JP2005075663A (ja) * 2003-08-29 2005-03-24 Hitachi Kiden Kogyo Ltd 基板置台
JP5052753B2 (ja) * 2005-02-16 2012-10-17 芝浦メカトロニクス株式会社 基板反転装置および基板製造装置
JP4609757B2 (ja) * 2005-02-23 2011-01-12 三井造船株式会社 成膜装置における基板装着方法
WO2007026852A1 (en) * 2005-08-29 2007-03-08 Ebara Corporation Substrate processing unit, substrate transfer method, substrate cleansing process unit, and substrate plating apparatus
JP4773834B2 (ja) * 2006-02-03 2011-09-14 キヤノン株式会社 マスク成膜方法およびマスク成膜装置
JP2008251754A (ja) * 2007-03-29 2008-10-16 Nikon Corp 基板搬送方法及び装置、並びに露光方法及び装置
KR101517020B1 (ko) 2008-05-15 2015-05-04 삼성디스플레이 주식회사 유기전계발광표시장치의 제조장치 및 제조방법
WO2010106958A1 (ja) * 2009-03-18 2010-09-23 株式会社アルバック 位置合わせ方法、蒸着方法
JP5206528B2 (ja) * 2009-03-19 2013-06-12 トヨタ自動車株式会社 ワーク搬送用機器およびワーク搬送方法
JP2011073875A (ja) * 2009-10-02 2011-04-14 Sharp Corp 搬送方法
WO2011074474A1 (ja) * 2009-12-16 2011-06-23 株式会社ニコン 基板支持部材、基板搬送装置、基板搬送方法、露光装置及びデバイス製造方法
JP2011125967A (ja) * 2009-12-18 2011-06-30 Hitachi High-Tech Control Systems Corp ウェーハ搬送ロボット用のハンド、ウェーハ搬送ロボット及びウェーハ搬送装置
JP5079114B2 (ja) * 2010-03-30 2012-11-21 住友化学株式会社 基板搬送機構および偏光フィルムの貼合装置における基板支持装置
JP5506921B2 (ja) * 2010-04-28 2014-05-28 株式会社アルバック 真空処理装置並びに基板とアラインメントマスクの移動方法及び位置合わせ方法並びに成膜方法
JP2012207263A (ja) * 2011-03-29 2012-10-25 Hitachi High-Technologies Corp 蒸着方法および蒸着装置
SG10201605875SA (en) * 2011-07-19 2016-09-29 Ebara Corp Plating apparatus and plating method
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JP6417916B2 (ja) * 2014-12-15 2018-11-07 東京エレクトロン株式会社 基板搬送方法、基板処理装置、及び記憶媒体

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11631813B2 (en) 2019-03-15 2023-04-18 Applied Materials, Inc. Deposition mask and methods of manufacturing and using a deposition mask
US11189516B2 (en) 2019-05-24 2021-11-30 Applied Materials, Inc. Method for mask and substrate alignment
US11538706B2 (en) 2019-05-24 2022-12-27 Applied Materials, Inc. System and method for aligning a mask with a substrate
US11414740B2 (en) 2019-06-10 2022-08-16 Applied Materials, Inc. Processing system for forming layers
US10916464B1 (en) 2019-07-26 2021-02-09 Applied Materials, Inc. Method of pre aligning carrier, wafer and carrier-wafer combination for throughput efficiency
US11183411B2 (en) 2019-07-26 2021-11-23 Applied Materials, Inc. Method of pre aligning carrier, wafer and carrier-wafer combination for throughput efficiency

Also Published As

Publication number Publication date
JP2018197362A (ja) 2018-12-13
CN108677158A (zh) 2018-10-19
CN108677158B (zh) 2020-09-25
KR101870586B1 (ko) 2018-06-22

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