KR101845840B1 - 광전자 반도체 컴포넌트 및 광전자 반도체 컴포넌트를 생산하기 위한 방법 - Google Patents

광전자 반도체 컴포넌트 및 광전자 반도체 컴포넌트를 생산하기 위한 방법 Download PDF

Info

Publication number
KR101845840B1
KR101845840B1 KR1020137011927A KR20137011927A KR101845840B1 KR 101845840 B1 KR101845840 B1 KR 101845840B1 KR 1020137011927 A KR1020137011927 A KR 1020137011927A KR 20137011927 A KR20137011927 A KR 20137011927A KR 101845840 B1 KR101845840 B1 KR 101845840B1
Authority
KR
South Korea
Prior art keywords
glass
substrate
phosphor
conversion element
delete delete
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020137011927A
Other languages
English (en)
Korean (ko)
Other versions
KR20130114671A (ko
Inventor
안젤라 에버하트
로란트 휘팅거
라인홀트 슈미트
슈테판 코테르
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20130114671A publication Critical patent/KR20130114671A/ko
Application granted granted Critical
Publication of KR101845840B1 publication Critical patent/KR101845840B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • H10H20/8581Means for heat extraction or cooling characterised by their material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8514Wavelength conversion means characterised by their shape, e.g. plate or foil
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • H10H20/8583Means for heat extraction or cooling not being in contact with the bodies

Landscapes

  • Led Device Packages (AREA)
KR1020137011927A 2010-10-08 2011-10-05 광전자 반도체 컴포넌트 및 광전자 반도체 컴포넌트를 생산하기 위한 방법 Active KR101845840B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010042217.7 2010-10-08
DE102010042217A DE102010042217A1 (de) 2010-10-08 2010-10-08 Optoelektronisches Halbleiterbauelement und Verfahren zu seiner Herstellung
PCT/EP2011/067381 WO2012045772A1 (de) 2010-10-08 2011-10-05 Optoelektronisches halbleiterbauelement und verfahren zu seiner herstellung

Publications (2)

Publication Number Publication Date
KR20130114671A KR20130114671A (ko) 2013-10-17
KR101845840B1 true KR101845840B1 (ko) 2018-04-06

Family

ID=44764153

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137011927A Active KR101845840B1 (ko) 2010-10-08 2011-10-05 광전자 반도체 컴포넌트 및 광전자 반도체 컴포넌트를 생산하기 위한 방법

Country Status (7)

Country Link
US (1) US20130207151A1 (enExample)
EP (1) EP2625724B1 (enExample)
JP (2) JP2013539238A (enExample)
KR (1) KR101845840B1 (enExample)
CN (1) CN103155187B (enExample)
DE (1) DE102010042217A1 (enExample)
WO (1) WO2012045772A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150083967A1 (en) 2012-04-24 2015-03-26 Koha Co., Ltd. Phosphor, Method for Manufacturing same, and light-emitting device
DE102012210083A1 (de) 2012-06-15 2013-12-19 Osram Gmbh Optoelektronisches halbleiterbauelement
KR101964418B1 (ko) * 2012-07-02 2019-04-01 엘지이노텍 주식회사 형광체 조성물 및 이를 포함하는 조명 장치
DE102012107290A1 (de) 2012-08-08 2014-02-13 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil, Konversionsmittelplättchen und Verfahren zur Herstellung eines Konversionsmittelplättchens
DE102012107797A1 (de) * 2012-08-23 2014-02-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements und Licht emittierendes Halbleiterbauelement
DE102012108160A1 (de) * 2012-09-03 2014-03-06 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102012110668A1 (de) * 2012-11-07 2014-05-08 Osram Opto Semiconductors Gmbh Konvertermaterial, Verfahren zur Herstellung eines Konvertermaterials und optoelektronisches Bauelement
DE102012220980A1 (de) * 2012-11-16 2014-05-22 Osram Gmbh Optoelektronisches halbleiterbauelement
JP7068771B2 (ja) * 2013-07-08 2022-05-17 ルミレッズ ホールディング ベーフェー 波長変換式半導体発光デバイス
CN103489857B (zh) * 2013-09-06 2017-06-06 中山市天健照明电器有限公司 一种白光led发光装置
EP3092666B1 (en) * 2014-01-07 2019-08-28 Lumileds Holding B.V. Glueless light emitting device with phosphor converter
JP2015142046A (ja) * 2014-01-29 2015-08-03 シャープ株式会社 波長変換部材、発光装置、および波長変換部材の製造方法
JP6252982B2 (ja) * 2014-02-06 2017-12-27 日本電気硝子株式会社 ガラス部材及びその製造方法
JP6575923B2 (ja) * 2014-09-26 2019-09-18 日本電気硝子株式会社 波長変換部材及びそれを用いた発光装置
JP2017188592A (ja) 2016-04-06 2017-10-12 日亜化学工業株式会社 発光装置
DE102017104134A1 (de) * 2017-02-28 2018-08-30 Osram Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
CN110612001B (zh) * 2018-06-14 2023-06-30 因特瓦克公司 多色介电涂层及uv喷墨打印
US10475968B1 (en) 2018-07-19 2019-11-12 Osram Opto Semiconductors Gmbh Optoelectronic component and a method for producing an optoelectronic component
EP3608959B1 (en) * 2018-08-06 2023-11-15 Nichia Corporation Light emitting device and method for manufacturing same
JP6963720B2 (ja) * 2018-08-30 2021-11-10 日亜化学工業株式会社 発光装置
WO2023072867A1 (en) * 2021-10-29 2023-05-04 Ams-Osram International Gmbh Optoelectronic semiconductor chip, optoelectronic component and method for producing an optoelectronic semiconductor chip

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007039303A (ja) * 2005-06-29 2007-02-15 Nippon Electric Glass Co Ltd 発光色変換部材
JP2007258228A (ja) * 2006-03-20 2007-10-04 Ngk Insulators Ltd 発光ダイオード素子用拡散板、発光ダイオード素子用拡散板構造および発光ダイオード装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW383508B (en) 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
US20030102473A1 (en) * 2001-08-15 2003-06-05 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate
DE102004019802B4 (de) * 2004-03-11 2007-01-25 Schott Ag Verwendung eines lumineszierenden Glases als Konversionsmedium zur Erzeugung von weißem Licht
US7553683B2 (en) * 2004-06-09 2009-06-30 Philips Lumiled Lighting Co., Llc Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices
US8324641B2 (en) * 2007-06-29 2012-12-04 Ledengin, Inc. Matrix material including an embedded dispersion of beads for a light-emitting device
US8134292B2 (en) * 2004-10-29 2012-03-13 Ledengin, Inc. Light emitting device with a thermal insulating and refractive index matching material
DE102005023134A1 (de) * 2005-05-19 2006-11-23 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Lumineszenzkonversions-LED
JP2007048864A (ja) * 2005-08-09 2007-02-22 Nippon Electric Glass Co Ltd 蛍光体複合材料
JP2007191702A (ja) * 2005-12-22 2007-08-02 Nippon Electric Glass Co Ltd 発光色変換材料
US8481977B2 (en) * 2006-03-24 2013-07-09 Goldeneye, Inc. LED light source with thermally conductive luminescent matrix
JP4978886B2 (ja) * 2006-06-14 2012-07-18 日本電気硝子株式会社 蛍光体複合材料及び蛍光体複合部材
US20080121911A1 (en) * 2006-11-28 2008-05-29 Cree, Inc. Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling same
DE102007057812A1 (de) * 2007-11-30 2009-06-25 Schott Ag Lichtemittierende Vorrichtung und Verfahren zu deren Herstellung sowie Lichtkonverter und dessen Verwendung
US20090200561A1 (en) * 2008-01-30 2009-08-13 Burrell Anthony K Composite phosphors based on coating porous substrates
DE102008021666A1 (de) * 2008-04-30 2009-11-05 Ledon Lighting Jennersdorf Gmbh Lichtemittierende Vorrichtung und Verfahren zur Herstellung einer lichtemittierenden Vorrichtung
DE102010009456A1 (de) 2010-02-26 2011-09-01 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement mit einem Halbleiterchip und einem Konversionselement und Verfahren zu dessen Herstellung

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007039303A (ja) * 2005-06-29 2007-02-15 Nippon Electric Glass Co Ltd 発光色変換部材
JP2007258228A (ja) * 2006-03-20 2007-10-04 Ngk Insulators Ltd 発光ダイオード素子用拡散板、発光ダイオード素子用拡散板構造および発光ダイオード装置

Also Published As

Publication number Publication date
WO2012045772A1 (de) 2012-04-12
DE102010042217A1 (de) 2012-04-12
CN103155187B (zh) 2016-12-07
JP2015109483A (ja) 2015-06-11
JP2013539238A (ja) 2013-10-17
US20130207151A1 (en) 2013-08-15
KR20130114671A (ko) 2013-10-17
JP6009020B2 (ja) 2016-10-19
EP2625724B1 (de) 2016-11-30
CN103155187A (zh) 2013-06-12
EP2625724A1 (de) 2013-08-14

Similar Documents

Publication Publication Date Title
KR101845840B1 (ko) 광전자 반도체 컴포넌트 및 광전자 반도체 컴포넌트를 생산하기 위한 방법
JP4621421B2 (ja) Ledおよび発光変換体を有する光源、および発光変換体の製造方法
KR102139777B1 (ko) Led 응용들을 위한 무기 바인더 내의 형광체
JP6223381B2 (ja) セラミック変換素子、セラミック変換素子を備えた半導体チップおよびセラミック変換素子の製造方法
JP6178413B2 (ja) オプトエレクトロニクス半導体素子およびその製造方法
JP2014220431A (ja) 回路基板、光半導体装置およびその製造方法
JP2008169348A (ja) 蛍光体複合材料
JP4765525B2 (ja) 発光色変換部材
WO2006120827A1 (ja) 蛍光体複合ガラス、蛍光体複合ガラスグリーンシート及び蛍光体複合ガラスの製造方法
CN101171205A (zh) 荧光体复合玻璃、荧光体复合玻璃生片和荧光体复合玻璃的制造方法
JP2007048864A (ja) 蛍光体複合材料
WO2015195820A1 (en) Method of making a ceramic wavelength converter assembly
EP3447810B1 (en) Light emitting device
CN100521269C (zh) 固态器件
KR102103881B1 (ko) Uv led칩을 이용하는 백색 발광소자
JP2012114231A (ja) 発光部品、発光器、及び発光部品の製造方法
WO2019061818A1 (zh) 一种波长转换装置及发光装置
TWI638788B (zh) 包含利用玻璃漿料的顏色轉換原材料的發光二極體晶片尺寸封裝件及其製備方法
JP2013105647A (ja) 光源装置、発光色度調整方法、光源装置の製造方法
TWI670870B (zh) Led用玻璃的製備方法、利用led用玻璃的led晶片封裝部件及包括其的led封裝件及其製備方法
JP2019029648A (ja) 波長変換部材及び発光装置
TW201210977A (en) Method for manufacturing substrate containing fluorescent powder and light emitting device
KR20170008938A (ko) 글래스 파우더를 활용한 색변환 소재의 LED Chip scale package

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20130508

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
AMND Amendment
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20161004

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20170725

Patent event code: PE09021S01D

AMND Amendment
PE0601 Decision on rejection of patent

Patent event date: 20171130

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20170725

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

AMND Amendment
PX0901 Re-examination

Patent event code: PX09011S01I

Patent event date: 20171130

Comment text: Decision to Refuse Application

Patent event code: PX09012R01I

Patent event date: 20170925

Comment text: Amendment to Specification, etc.

Patent event code: PX09012R01I

Patent event date: 20161004

Comment text: Amendment to Specification, etc.

PX0701 Decision of registration after re-examination

Patent event date: 20180209

Comment text: Decision to Grant Registration

Patent event code: PX07013S01D

Patent event date: 20180102

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20171130

Comment text: Decision to Refuse Application

Patent event code: PX07011S01I

Patent event date: 20170925

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20161004

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

X701 Decision to grant (after re-examination)
N231 Notification of change of applicant
PN2301 Change of applicant

Patent event date: 20180316

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20180330

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20180402

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20210319

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20220318

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20230316

Start annual number: 6

End annual number: 6