CN103155187B - 光电子半导体器件及其制造方法 - Google Patents

光电子半导体器件及其制造方法 Download PDF

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Publication number
CN103155187B
CN103155187B CN201180048562.8A CN201180048562A CN103155187B CN 103155187 B CN103155187 B CN 103155187B CN 201180048562 A CN201180048562 A CN 201180048562A CN 103155187 B CN103155187 B CN 103155187B
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China
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glass
substrate
ceramic
conversion element
optoelectronic semiconductor
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Chinese (zh)
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CN103155187A (zh
Inventor
安杰拉·埃贝哈特
罗兰·许廷格
赖因霍尔德·施密特
斯特凡·克特
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Ams Osram International GmbH
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Osram GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8581—Means for heat extraction or cooling characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8583—Means for heat extraction or cooling not being in contact with the bodies

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CN201180048562.8A 2010-10-08 2011-10-05 光电子半导体器件及其制造方法 Active CN103155187B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010042217.7 2010-10-08
DE102010042217A DE102010042217A1 (de) 2010-10-08 2010-10-08 Optoelektronisches Halbleiterbauelement und Verfahren zu seiner Herstellung
PCT/EP2011/067381 WO2012045772A1 (de) 2010-10-08 2011-10-05 Optoelektronisches halbleiterbauelement und verfahren zu seiner herstellung

Publications (2)

Publication Number Publication Date
CN103155187A CN103155187A (zh) 2013-06-12
CN103155187B true CN103155187B (zh) 2016-12-07

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CN201180048562.8A Active CN103155187B (zh) 2010-10-08 2011-10-05 光电子半导体器件及其制造方法

Country Status (7)

Country Link
US (1) US20130207151A1 (enExample)
EP (1) EP2625724B1 (enExample)
JP (2) JP2013539238A (enExample)
KR (1) KR101845840B1 (enExample)
CN (1) CN103155187B (enExample)
DE (1) DE102010042217A1 (enExample)
WO (1) WO2012045772A1 (enExample)

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DE102012210083A1 (de) 2012-06-15 2013-12-19 Osram Gmbh Optoelektronisches halbleiterbauelement
KR101964418B1 (ko) * 2012-07-02 2019-04-01 엘지이노텍 주식회사 형광체 조성물 및 이를 포함하는 조명 장치
DE102012107290A1 (de) 2012-08-08 2014-02-13 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil, Konversionsmittelplättchen und Verfahren zur Herstellung eines Konversionsmittelplättchens
DE102012107797A1 (de) * 2012-08-23 2014-02-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements und Licht emittierendes Halbleiterbauelement
DE102012108160A1 (de) * 2012-09-03 2014-03-06 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102012110668A1 (de) * 2012-11-07 2014-05-08 Osram Opto Semiconductors Gmbh Konvertermaterial, Verfahren zur Herstellung eines Konvertermaterials und optoelektronisches Bauelement
DE102012220980A1 (de) * 2012-11-16 2014-05-22 Osram Gmbh Optoelektronisches halbleiterbauelement
JP7068771B2 (ja) * 2013-07-08 2022-05-17 ルミレッズ ホールディング ベーフェー 波長変換式半導体発光デバイス
CN103489857B (zh) * 2013-09-06 2017-06-06 中山市天健照明电器有限公司 一种白光led发光装置
EP3092666B1 (en) * 2014-01-07 2019-08-28 Lumileds Holding B.V. Glueless light emitting device with phosphor converter
JP2015142046A (ja) * 2014-01-29 2015-08-03 シャープ株式会社 波長変換部材、発光装置、および波長変換部材の製造方法
JP6252982B2 (ja) * 2014-02-06 2017-12-27 日本電気硝子株式会社 ガラス部材及びその製造方法
JP6575923B2 (ja) * 2014-09-26 2019-09-18 日本電気硝子株式会社 波長変換部材及びそれを用いた発光装置
JP2017188592A (ja) 2016-04-06 2017-10-12 日亜化学工業株式会社 発光装置
DE102017104134A1 (de) * 2017-02-28 2018-08-30 Osram Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
CN110612001B (zh) * 2018-06-14 2023-06-30 因特瓦克公司 多色介电涂层及uv喷墨打印
US10475968B1 (en) 2018-07-19 2019-11-12 Osram Opto Semiconductors Gmbh Optoelectronic component and a method for producing an optoelectronic component
EP3608959B1 (en) * 2018-08-06 2023-11-15 Nichia Corporation Light emitting device and method for manufacturing same
JP6963720B2 (ja) * 2018-08-30 2021-11-10 日亜化学工業株式会社 発光装置
WO2023072867A1 (en) * 2021-10-29 2023-05-04 Ams-Osram International Gmbh Optoelectronic semiconductor chip, optoelectronic component and method for producing an optoelectronic semiconductor chip

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US20030102473A1 (en) * 2001-08-15 2003-06-05 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate
DE102004019802B4 (de) * 2004-03-11 2007-01-25 Schott Ag Verwendung eines lumineszierenden Glases als Konversionsmedium zur Erzeugung von weißem Licht
US7553683B2 (en) * 2004-06-09 2009-06-30 Philips Lumiled Lighting Co., Llc Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices
US8324641B2 (en) * 2007-06-29 2012-12-04 Ledengin, Inc. Matrix material including an embedded dispersion of beads for a light-emitting device
US8134292B2 (en) * 2004-10-29 2012-03-13 Ledengin, Inc. Light emitting device with a thermal insulating and refractive index matching material
DE102005023134A1 (de) * 2005-05-19 2006-11-23 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Lumineszenzkonversions-LED
JP4765525B2 (ja) * 2005-06-29 2011-09-07 日本電気硝子株式会社 発光色変換部材
JP2007048864A (ja) * 2005-08-09 2007-02-22 Nippon Electric Glass Co Ltd 蛍光体複合材料
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Also Published As

Publication number Publication date
WO2012045772A1 (de) 2012-04-12
DE102010042217A1 (de) 2012-04-12
JP2015109483A (ja) 2015-06-11
JP2013539238A (ja) 2013-10-17
KR101845840B1 (ko) 2018-04-06
US20130207151A1 (en) 2013-08-15
KR20130114671A (ko) 2013-10-17
JP6009020B2 (ja) 2016-10-19
EP2625724B1 (de) 2016-11-30
CN103155187A (zh) 2013-06-12
EP2625724A1 (de) 2013-08-14

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