KR101837917B1 - 기판처리장치 - Google Patents

기판처리장치 Download PDF

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Publication number
KR101837917B1
KR101837917B1 KR1020177007516A KR20177007516A KR101837917B1 KR 101837917 B1 KR101837917 B1 KR 101837917B1 KR 1020177007516 A KR1020177007516 A KR 1020177007516A KR 20177007516 A KR20177007516 A KR 20177007516A KR 101837917 B1 KR101837917 B1 KR 101837917B1
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KR
South Korea
Prior art keywords
substrate
processing
processing chamber
chamber
heating
Prior art date
Application number
KR1020177007516A
Other languages
English (en)
Korean (ko)
Other versions
KR20170034450A (ko
Inventor
도모나리 스즈키
진 니시카와
Original Assignee
가부시키가이샤 니콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR20170034450A publication Critical patent/KR20170034450A/ko
Application granted granted Critical
Publication of KR101837917B1 publication Critical patent/KR101837917B1/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H01L51/56—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L2251/5338—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electroluminescent Light Sources (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Filters (AREA)
  • Advancing Webs (AREA)
  • Materials For Photolithography (AREA)
  • Liquid Crystal (AREA)
  • Coating Apparatus (AREA)
KR1020177007516A 2011-04-25 2012-04-20 기판처리장치 KR101837917B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2011-097122 2011-04-25
JP2011097122 2011-04-25
PCT/JP2012/060739 WO2012147658A1 (ja) 2011-04-25 2012-04-20 基板処理装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020137020267A Division KR101719860B1 (ko) 2011-04-25 2012-04-20 기판처리장치

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187003303A Division KR101896220B1 (ko) 2011-04-25 2012-04-20 기판처리장치

Publications (2)

Publication Number Publication Date
KR20170034450A KR20170034450A (ko) 2017-03-28
KR101837917B1 true KR101837917B1 (ko) 2018-03-12

Family

ID=47072178

Family Applications (4)

Application Number Title Priority Date Filing Date
KR1020187023604A KR101970114B1 (ko) 2011-04-25 2012-04-20 패턴 형성 방법
KR1020137020267A KR101719860B1 (ko) 2011-04-25 2012-04-20 기판처리장치
KR1020187003303A KR101896220B1 (ko) 2011-04-25 2012-04-20 기판처리장치
KR1020177007516A KR101837917B1 (ko) 2011-04-25 2012-04-20 기판처리장치

Family Applications Before (3)

Application Number Title Priority Date Filing Date
KR1020187023604A KR101970114B1 (ko) 2011-04-25 2012-04-20 패턴 형성 방법
KR1020137020267A KR101719860B1 (ko) 2011-04-25 2012-04-20 기판처리장치
KR1020187003303A KR101896220B1 (ko) 2011-04-25 2012-04-20 기판처리장치

Country Status (5)

Country Link
JP (4) JP6003884B2 (ja)
KR (4) KR101970114B1 (ja)
CN (2) CN103380483B (ja)
TW (4) TWI587428B (ja)
WO (1) WO2012147658A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106896651B (zh) * 2013-06-14 2018-06-12 株式会社尼康 曝光方法
KR102092155B1 (ko) * 2014-09-04 2020-03-23 가부시키가이샤 니콘 처리 시스템 및 디바이스 제조 방법
US11335550B2 (en) * 2017-09-08 2022-05-17 Acm Research (Shanghai) Inc. Method and apparatus for cleaning semiconductor wafer
JP7142494B2 (ja) * 2018-06-25 2022-09-27 東京エレクトロン株式会社 基板処理装置および基板処理方法

Citations (4)

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JP2000236105A (ja) 1999-02-16 2000-08-29 Fuji Electric Co Ltd 薄膜太陽電池の製造方法および装置
JP2003205264A (ja) * 2002-01-15 2003-07-22 Fuji Photo Film Co Ltd 多層塗布膜の製造装置
JP2009163889A (ja) 2007-12-28 2009-07-23 Konica Minolta Holdings Inc 機能性薄膜の製造方法、有機エレクトロルミネッセンス照明装置
JP2010062012A (ja) * 2008-09-04 2010-03-18 Konica Minolta Holdings Inc 有機エレクトロルミネッセンス素子の製造方法および有機エレクトロルミネッセンス素子

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JPH10314635A (ja) * 1997-05-19 1998-12-02 Hitachi Ltd 塗布装置
JPH1197333A (ja) * 1997-09-24 1999-04-09 Toshiba Microelectronics Corp レジスト廃液回収装置
JPH11204411A (ja) * 1998-01-19 1999-07-30 Nikon Corp 塗布現像露光装置
JP2000303178A (ja) * 1999-04-16 2000-10-31 Sanyo Electric Co Ltd 薄膜形成装置
JP2002358024A (ja) * 2001-05-31 2002-12-13 Matsushita Electric Ind Co Ltd 表示装置の製造方法及び液晶表示装置
JP2003229356A (ja) * 2002-02-06 2003-08-15 Dainippon Screen Mfg Co Ltd 基板処理装置
US6566032B1 (en) * 2002-05-08 2003-05-20 Eastman Kodak Company In-situ method for making OLED devices that are moisture or oxygen-sensitive
JP2003192127A (ja) * 2002-12-03 2003-07-09 Takehide Hayashi フラットパネル枚葉搬送システム
JP2004186469A (ja) * 2002-12-04 2004-07-02 Nippon Telegr & Teleph Corp <Ntt> 帯状連続基材およびそれを用いた半導体装置ならびに製造方法
JP2005260040A (ja) * 2004-02-12 2005-09-22 Sony Corp ドーピング方法、半導体装置の製造方法および電子応用装置の製造方法
US20050196707A1 (en) * 2004-03-02 2005-09-08 Eastman Kodak Company Patterned conductive coatings
WO2006100868A1 (ja) 2005-03-18 2006-09-28 Konica Minolta Holdings, Inc. 有機化合物層の形成方法、有機ｅｌ素子の製造方法、有機ｅｌ素子
JP2006294484A (ja) * 2005-04-13 2006-10-26 Konica Minolta Holdings Inc 有機エレクトロルミネッセンス素子とその製造方法及び有機エレクトロルミネッセンス表示装置
JPWO2007004627A1 (ja) * 2005-07-05 2009-01-29 コニカミノルタホールディングス株式会社 パターニング装置、有機エレクトロルミネッセンス素子とその製造方法及び有機エレクトロルミネッセンス表示装置
JP2007149482A (ja) * 2005-11-28 2007-06-14 Konica Minolta Holdings Inc 有機ｅｌ素子の製造方法
JP4771816B2 (ja) * 2006-01-27 2011-09-14 大日本スクリーン製造株式会社 基板処理装置
JP2007207469A (ja) * 2006-01-31 2007-08-16 Konica Minolta Holdings Inc 積層体の製造方法、積層体、有機エレクトロルミネッセンス素子の製造方法、有機エレクトロルミネッセンス素子、有機エレクトロルミネッセンス表示装置
US8137464B2 (en) * 2006-03-26 2012-03-20 Lotus Applied Technology, Llc Atomic layer deposition system for coating flexible substrates
JP2008252049A (ja) * 2006-05-18 2008-10-16 Sumitomo Precision Prod Co Ltd 処理液処理装置及びこれを備えた基板処理装置
JP5109301B2 (ja) * 2006-07-27 2012-12-26 富士電機株式会社 成膜装置および成膜方法
JP2008204890A (ja) * 2007-02-22 2008-09-04 Konica Minolta Holdings Inc 有機エレクトロルミネッセンスパネル及びその製造方法、これを用いる照明又は表示装置
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JP5182610B2 (ja) * 2007-10-11 2013-04-17 富士電機株式会社 薄膜太陽電池の製造装置
JP2009174002A (ja) * 2008-01-24 2009-08-06 Fujifilm Corp 熱処理方法、およびバリアフィルム
JP4756076B2 (ja) * 2009-02-24 2011-08-24 東京エレクトロン株式会社 基板処理システム
WO2010103967A1 (ja) * 2009-03-13 2010-09-16 コニカミノルタホールディングス株式会社 有機エレクトロニクス素子及びその製造方法
JP2010277755A (ja) * 2009-05-27 2010-12-09 Konica Minolta Holdings Inc 有機エレクトロルミネッセンス素子および有機エレクトロルミネッセンス素子の作製方法
US8379186B2 (en) * 2009-07-17 2013-02-19 Nikon Corporation Pattern formation apparatus, pattern formation method, and device manufacturing method
US8801307B2 (en) * 2009-09-25 2014-08-12 Nikon Corporation Substrate cartridge, substrate processing apparatus, substrate processing system, control apparatus, and method of manufacturing display element
JP5494124B2 (ja) * 2010-03-30 2014-05-14 大日本印刷株式会社 パターン形成方法、カラーフィルターの製造方法、およびパターン形成装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000236105A (ja) 1999-02-16 2000-08-29 Fuji Electric Co Ltd 薄膜太陽電池の製造方法および装置
JP2003205264A (ja) * 2002-01-15 2003-07-22 Fuji Photo Film Co Ltd 多層塗布膜の製造装置
JP2009163889A (ja) 2007-12-28 2009-07-23 Konica Minolta Holdings Inc 機能性薄膜の製造方法、有機エレクトロルミネッセンス照明装置
JP2010062012A (ja) * 2008-09-04 2010-03-18 Konica Minolta Holdings Inc 有機エレクトロルミネッセンス素子の製造方法および有機エレクトロルミネッセンス素子

Also Published As

Publication number Publication date
CN103380483B (zh) 2016-11-02
KR20180095947A (ko) 2018-08-28
TWI624896B (zh) 2018-05-21
KR20140012635A (ko) 2014-02-03
KR20170034450A (ko) 2017-03-28
TW201630102A (zh) 2016-08-16
KR101970114B1 (ko) 2019-04-17
TW201243983A (en) 2012-11-01
JP6337993B2 (ja) 2018-06-06
CN105575975A (zh) 2016-05-11
JPWO2012147658A1 (ja) 2014-07-28
KR101719860B1 (ko) 2017-03-24
JP2018151645A (ja) 2018-09-27
TWI595579B (zh) 2017-08-11
KR101896220B1 (ko) 2018-09-07
KR20180016623A (ko) 2018-02-14
TWI587428B (zh) 2017-06-11
TW201731005A (zh) 2017-09-01
WO2012147658A1 (ja) 2012-11-01
CN105575975B (zh) 2018-04-06
JP2016174164A (ja) 2016-09-29
JP6003884B2 (ja) 2016-10-05
CN103380483A (zh) 2013-10-30
JP6508389B2 (ja) 2019-05-08
TW201830478A (zh) 2018-08-16
JP2017188696A (ja) 2017-10-12
TWI662592B (zh) 2019-06-11
JP6172322B2 (ja) 2017-08-02

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