KR101814683B1 - 2차원 인장 가능하고 구부릴 수 있는 장치 - Google Patents

2차원 인장 가능하고 구부릴 수 있는 장치 Download PDF

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KR101814683B1
KR101814683B1 KR1020167032797A KR20167032797A KR101814683B1 KR 101814683 B1 KR101814683 B1 KR 101814683B1 KR 1020167032797 A KR1020167032797 A KR 1020167032797A KR 20167032797 A KR20167032797 A KR 20167032797A KR 101814683 B1 KR101814683 B1 KR 101814683B1
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substrate
tensionable
pdms
component
interconnects
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KR20160140962A (ko
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존 에이. 로저스
매튜 메이틀
위강 썬
흥조 고
앤드류 칼슨
원묵 최
마크 스토이코비치
한칭 지앙
용강 후앙
랄프 쥐. 누쪼
건재 이
성준 강
쩡타오 쭈
에띠엔느 메나르
종현 안
훈식 김
달영 강
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더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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KR1020167032797A 2006-09-06 2007-09-06 2차원 인장 가능하고 구부릴 수 있는 장치 Active KR101814683B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US82468306P 2006-09-06 2006-09-06
US60/824,683 2006-09-06
US94462607P 2007-06-18 2007-06-18
US60/944,626 2007-06-18
PCT/US2007/077759 WO2008030960A2 (en) 2006-09-06 2007-09-06 Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

Related Parent Applications (1)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230112256A (ko) 2022-01-20 2023-07-27 공주대학교 산학협력단 물결 모양 배선 및 이의 제조방법
KR20240007422A (ko) * 2022-07-08 2024-01-16 공주대학교 산학협력단 물결형 연신 배선 및 그 제조 방법

Families Citing this family (180)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7557433B2 (en) 2004-10-25 2009-07-07 Mccain Joseph H Microelectronic device with integrated energy source
US8217381B2 (en) 2004-06-04 2012-07-10 The Board Of Trustees Of The University Of Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
KR101572992B1 (ko) 2004-06-04 2015-12-11 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 인쇄가능한 반도체소자들의 제조 및 조립방법과 장치
US7521292B2 (en) 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
JP5319533B2 (ja) 2006-09-20 2013-10-16 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ 転写可能な半導体構造、デバイス、及びデバイスコンポーネントを作成するための剥離方法
MY149292A (en) 2007-01-17 2013-08-30 Univ Illinois Optical systems fabricated by printing-based assembly
TWI500364B (zh) 2008-03-05 2015-09-11 美國伊利諾大學理事會 可延展且可折疊的電子裝置
US8470701B2 (en) 2008-04-03 2013-06-25 Advanced Diamond Technologies, Inc. Printable, flexible and stretchable diamond for thermal management
US7927976B2 (en) 2008-07-23 2011-04-19 Semprius, Inc. Reinforced composite stamp for dry transfer printing of semiconductor elements
US8679888B2 (en) 2008-09-24 2014-03-25 The Board Of Trustees Of The University Of Illinois Arrays of ultrathin silicon solar microcells
US9119533B2 (en) 2008-10-07 2015-09-01 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US9123614B2 (en) 2008-10-07 2015-09-01 Mc10, Inc. Methods and applications of non-planar imaging arrays
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US8372726B2 (en) 2008-10-07 2013-02-12 Mc10, Inc. Methods and applications of non-planar imaging arrays
EP2349440B1 (en) 2008-10-07 2019-08-21 Mc10, Inc. Catheter balloon having stretchable integrated circuitry and sensor array
US8097926B2 (en) 2008-10-07 2012-01-17 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
KR101041139B1 (ko) * 2008-11-04 2011-06-13 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 그를 포함하는 유기전계발광표시장치
WO2010056857A2 (en) * 2008-11-12 2010-05-20 Mc10, Inc. Extremely stretchable electronics
US8506867B2 (en) 2008-11-19 2013-08-13 Semprius, Inc. Printing semiconductor elements by shear-assisted elastomeric stamp transfer
EP2386117A4 (en) * 2009-01-12 2017-12-27 Mc10, Inc. Methods and applications of non-planar imaging arrays
EP2392196B1 (en) 2009-01-30 2018-08-22 IMEC vzw Stretchable electronic device
TWI592996B (zh) 2009-05-12 2017-07-21 美國伊利諾大學理事會 用於可變形及半透明顯示器之超薄微刻度無機發光二極體之印刷總成
FR2947063B1 (fr) 2009-06-19 2011-07-01 Commissariat Energie Atomique Retroprojecteur
US8261660B2 (en) 2009-07-22 2012-09-11 Semprius, Inc. Vacuum coupled tool apparatus for dry transfer printing semiconductor elements
KR101077789B1 (ko) 2009-08-07 2011-10-28 한국과학기술원 Led 디스플레이 제조 방법 및 이에 의하여 제조된 led 디스플레이
KR101113692B1 (ko) 2009-09-17 2012-02-27 한국과학기술원 태양전지 제조방법 및 이에 의하여 제조된 태양전지
WO2011041727A1 (en) 2009-10-01 2011-04-07 Mc10, Inc. Protective cases with integrated electronics
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
JP6046491B2 (ja) 2009-12-16 2016-12-21 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ コンフォーマル電子機器を使用した生体内での電気生理学
KR101405463B1 (ko) 2010-01-15 2014-06-27 그래핀스퀘어 주식회사 기체 및 수분 차단용 그래핀 보호막, 이의 형성 방법 및 그의 용도
US8450779B2 (en) * 2010-03-08 2013-05-28 International Business Machines Corporation Graphene based three-dimensional integrated circuit device
WO2011112931A1 (en) 2010-03-12 2011-09-15 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
EP2974673B1 (en) 2010-03-17 2017-03-22 The Board of Trustees of the University of Illionis Implantable biomedical devices on bioresorbable substrates
US9603243B2 (en) 2010-04-12 2017-03-21 Tufts University Silk electronic components
CA2813000C (en) * 2010-09-27 2018-09-04 Techtonic Pty Ltd Undulatory structures
CN102001622B (zh) * 2010-11-08 2013-03-20 中国科学技术大学 空气桥式纳米器件的制备方法
WO2012097163A1 (en) 2011-01-14 2012-07-19 The Board Of Trustees Of The University Of Illinois Optical component array having adjustable curvature
EP2681538B1 (en) 2011-03-11 2019-03-06 Mc10, Inc. Integrated devices to facilitate quantitative assays and diagnostics
TWI455341B (zh) * 2011-03-21 2014-10-01 Motech Ind Inc Method for manufacturing solar cells
CN107081937A (zh) * 2011-04-18 2017-08-22 阿迪达斯股份公司 用于连续封装细长部件的方法和设备以及所获得的封装的细长部件
US9765934B2 (en) 2011-05-16 2017-09-19 The Board Of Trustees Of The University Of Illinois Thermally managed LED arrays assembled by printing
EP2712491B1 (en) 2011-05-27 2019-12-04 Mc10, Inc. Flexible electronic structure
US8934965B2 (en) 2011-06-03 2015-01-13 The Board Of Trustees Of The University Of Illinois Conformable actively multiplexed high-density surface electrode array for brain interfacing
CN102244015B (zh) * 2011-06-17 2012-12-19 华中科技大学 一种在预拉伸的弹性基板上进行柔性电子图案化的方法
WO2013022853A1 (en) 2011-08-05 2013-02-14 Mc10, Inc. Catheter balloon methods and apparatus employing sensing elements
US9757050B2 (en) 2011-08-05 2017-09-12 Mc10, Inc. Catheter balloon employing force sensing elements
WO2013033724A1 (en) 2011-09-01 2013-03-07 Mc10, Inc. Electronics for detection of a condition of tissue
JP6277130B2 (ja) 2011-10-05 2018-02-14 エムシーテン、インコーポレイテッド 医療用の装置およびそれの製造方法
CN108389893A (zh) 2011-12-01 2018-08-10 伊利诺伊大学评议会 经设计以经历可编程转变的瞬态器件
FR2985371A1 (fr) * 2011-12-29 2013-07-05 Commissariat Energie Atomique Procede de fabrication d'une structure multicouche sur un support
US8492208B1 (en) * 2012-01-05 2013-07-23 International Business Machines Corporation Compressive (PFET) and tensile (NFET) channel strain in nanowire FETs fabricated with a replacement gate process
CN102610534A (zh) * 2012-01-13 2012-07-25 华中科技大学 一种可伸缩rfid电子标签及其制造方法
US10276758B2 (en) 2012-03-19 2019-04-30 Lumileds Llc Singulaton of light emitting devices before and after application of phosphor
CN102610672A (zh) * 2012-03-23 2012-07-25 合肥工业大学 一种异质结型光电探测器及其制备方法
KR20150004819A (ko) 2012-03-30 2015-01-13 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 표면에 상응하는 부속체 장착가능한 전자 장치
US9247637B2 (en) 2012-06-11 2016-01-26 Mc10, Inc. Strain relief structures for stretchable interconnects
US9226402B2 (en) 2012-06-11 2015-12-29 Mc10, Inc. Strain isolation structures for stretchable electronics
US9168094B2 (en) 2012-07-05 2015-10-27 Mc10, Inc. Catheter device including flow sensing
US9295842B2 (en) 2012-07-05 2016-03-29 Mc10, Inc. Catheter or guidewire device including flow sensing and use thereof
CN102903841B (zh) * 2012-09-18 2015-09-09 中国科学院宁波材料技术与工程研究所 一种温度控制的磁电子器件、其制备方法及应用
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
WO2014058473A1 (en) 2012-10-09 2014-04-17 Mc10, Inc. Conformal electronics integrated with apparel
CN102983791A (zh) * 2012-10-26 2013-03-20 苏州大学 温差交流发电装置及其发电方法
WO2014104267A1 (en) 2012-12-28 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102051519B1 (ko) 2013-02-25 2019-12-03 삼성전자주식회사 파이버 상에 형성된 박막 트랜지스터 및 그 제조 방법
AU2014250792B2 (en) 2013-04-12 2018-05-10 The Board Of Trustees Of The University Of Illinois Materials, electronic systems and modes for active and passive transience
US9706647B2 (en) * 2013-05-14 2017-07-11 Mc10, Inc. Conformal electronics including nested serpentine interconnects
US9372123B2 (en) 2013-08-05 2016-06-21 Mc10, Inc. Flexible temperature sensor including conformable electronics
CA2925387A1 (en) 2013-10-07 2015-04-16 Mc10, Inc. Conformal sensor systems for sensing and analysis
CN103560157B (zh) * 2013-11-19 2016-02-24 中国科学院上海微系统与信息技术研究所 应变结构及其制作方法
CN105813545A (zh) 2013-11-22 2016-07-27 Mc10股份有限公司 用于感测和分析心搏的适形传感器系统
US10410962B2 (en) 2014-01-06 2019-09-10 Mc10, Inc. Encapsulated conformal electronic systems and devices, and methods of making and using the same
CN106063392B (zh) 2014-03-04 2020-06-02 Mc10股份有限公司 电子器件的多部分柔性包封壳体
TW201602549A (zh) 2014-03-12 2016-01-16 Mc10公司 試驗中變化之定量技術
CN103869607A (zh) * 2014-03-18 2014-06-18 无锡中微掩模电子有限公司 二元掩模铬金属膜去除方法
TWI576715B (zh) * 2014-05-02 2017-04-01 希諾皮斯股份有限公司 非暫態電腦可讀取媒體以及用於模擬積體電路處理的系統
JP2017524542A (ja) 2014-05-28 2017-08-31 スリーエム イノベイティブ プロパティズ カンパニー 可撓性基板上のmemsデバイス
KR101691485B1 (ko) * 2014-07-11 2017-01-02 인텔 코포레이션 굽힘 및 펼침이 가능한 전자 장치들 및 방법들
CN112331604B (zh) * 2014-07-20 2024-09-06 艾克斯展示公司技术有限公司 用于微转贴印刷的设备及方法
KR102161644B1 (ko) 2014-08-20 2020-10-06 삼성디스플레이 주식회사 스트레쳐블 표시 패널 및 이를 포함하는 표시 장치
CN104153128B (zh) * 2014-08-26 2017-03-08 青岛大学 一种基于有序排列扭曲结构柔性可拉伸器件的制备方法
US9899330B2 (en) 2014-10-03 2018-02-20 Mc10, Inc. Flexible electronic circuits with embedded integrated circuit die
US10297572B2 (en) 2014-10-06 2019-05-21 Mc10, Inc. Discrete flexible interconnects for modules of integrated circuits
USD781270S1 (en) 2014-10-15 2017-03-14 Mc10, Inc. Electronic device having antenna
US9398705B2 (en) * 2014-12-02 2016-07-19 Flextronics Ap, Llc. Stretchable printed electronic sheets to electrically connect uneven two dimensional and three dimensional surfaces
US9991326B2 (en) 2015-01-14 2018-06-05 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device comprising flexible substrate and light-emitting element
KR102456698B1 (ko) 2015-01-15 2022-10-19 삼성디스플레이 주식회사 신축성 표시 장치
KR102356697B1 (ko) * 2015-01-15 2022-01-27 삼성디스플레이 주식회사 신축성 표시 장치 및 그의 제조 방법
KR102320382B1 (ko) 2015-01-28 2021-11-02 삼성디스플레이 주식회사 전자 장치
EP3258837A4 (en) 2015-02-20 2018-10-10 Mc10, Inc. Automated detection and configuration of wearable devices based on on-body status, location, and/or orientation
WO2016140961A1 (en) 2015-03-02 2016-09-09 Mc10, Inc. Perspiration sensor
KR102335807B1 (ko) * 2015-03-10 2021-12-08 삼성디스플레이 주식회사 표시 장치
KR102385327B1 (ko) * 2015-04-06 2022-04-12 삼성디스플레이 주식회사 플렉서블 표시 장치 및 이의 제조 방법
MX2017015586A (es) 2015-06-01 2018-08-23 Univ Illinois Sistemas electronicos miniaturizados con capacidades de energia inalambrica y comunicacion de campo cercano.
EP3304130B1 (en) 2015-06-01 2021-10-06 The Board of Trustees of the University of Illinois Alternative approach to uv sensing
US10026721B2 (en) 2015-06-30 2018-07-17 Apple Inc. Electronic devices with soft input-output components
US9841548B2 (en) 2015-06-30 2017-12-12 Apple Inc. Electronic devices with soft input-output components
CN105049033B (zh) * 2015-07-01 2017-11-24 东南大学 基于砷化镓基低漏电流双悬臂梁开关的或非门
WO2017015000A1 (en) 2015-07-17 2017-01-26 Mc10, Inc. Conductive stiffener, method of making a conductive stiffener, and conductive adhesive and encapsulation layers
US10709384B2 (en) 2015-08-19 2020-07-14 Mc10, Inc. Wearable heat flux devices and methods of use
US10300371B2 (en) 2015-10-01 2019-05-28 Mc10, Inc. Method and system for interacting with a virtual environment
CN108289630A (zh) 2015-10-05 2018-07-17 Mc10股份有限公司 用于神经调节和刺激的方法和系统
DE102015014256B4 (de) 2015-11-05 2020-06-18 Airbus Defence and Space GmbH Mikroelektronisches Modul zur Reinigung einer Oberfläche, Modularray und Verfahren zur Reinigung einer Oberfläche
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
WO2017085849A1 (ja) * 2015-11-19 2017-05-26 三井金属鉱業株式会社 誘電体層を有するプリント配線板の製造方法
CN105405983B (zh) * 2015-12-14 2017-05-10 吉林大学 具有周期性规则褶皱结构的可拉伸有机电致发光器件
CN106920800B (zh) * 2015-12-25 2019-07-23 昆山工研院新型平板显示技术中心有限公司 柔性显示器件及其形成方法
CN108781314B (zh) 2016-02-22 2022-07-08 美谛达解决方案公司 用于贴身数据和电力传输的系统、设备和方法
EP3420733A4 (en) 2016-02-22 2019-06-26 Mc10, Inc. SYSTEM, DEVICE AND METHOD FOR AM-BODY DETECTION OF SENSOR INFORMATION WITH COUPLED HUB AND SENSOR NODES
KR102455039B1 (ko) * 2016-03-18 2022-10-17 삼성디스플레이 주식회사 신축성 디스플레이 장치
CN109310340A (zh) 2016-04-19 2019-02-05 Mc10股份有限公司 用于测量汗液的方法和系统
ITUA20162943A1 (it) * 2016-04-27 2017-10-27 Pilegrowth Tech S R L Metodo per la fabbricazione industriale di una struttura a semiconduttore a ridotto incurvamento.
CN114637153B (zh) * 2016-05-31 2025-10-17 伊英克公司 可伸展的电光显示器
US10002222B2 (en) * 2016-07-14 2018-06-19 Arm Limited System and method for perforating redundant metal in self-aligned multiple patterning
US10447347B2 (en) 2016-08-12 2019-10-15 Mc10, Inc. Wireless charger and high speed data off-loader
CN106229038B (zh) * 2016-09-07 2017-10-24 东华大学 一种基于多级结构石墨烯的可拉伸透明导电弹性体的制备方法
JP2018060932A (ja) * 2016-10-06 2018-04-12 ローム株式会社 Ledパッケージ
EP3529595B1 (en) 2016-10-20 2023-05-31 Quantum Diamond Technologies Inc. Methods and apparatus for magnetic particle analysis using wide-field diamond magnetic imaging
JP2018078272A (ja) * 2016-10-31 2018-05-17 スリーエム イノベイティブ プロパティズ カンパニー 三次元形状熱伝導性成形体、及びその製造方法
CN106601933B (zh) * 2016-12-12 2018-02-23 吉林大学 一种具有规则褶皱结构的可拉伸电子器件的制备方法
US11513115B2 (en) 2016-12-23 2022-11-29 Quantum Diamond Technologies Inc. Methods and apparatus for magnetic multi-bead assays
DE102017100053A1 (de) 2017-01-03 2018-07-05 Infineon Technologies Ag Rahmenmontage nach Folienexpansion
WO2018153421A2 (en) * 2017-02-24 2018-08-30 Flexucell Aps Light emitting transducer
JP2018179501A (ja) * 2017-04-03 2018-11-15 日本精工株式会社 近接覚センサ
WO2018191478A1 (en) * 2017-04-12 2018-10-18 Sense Photonics, Inc. Devices with ultra-small vertical cavity surface emitting laser emitters incorporating beam steering
US20180323239A1 (en) * 2017-05-03 2018-11-08 Innolux Corporation Display device
CN107248518B (zh) * 2017-05-26 2020-04-17 京东方科技集团股份有限公司 光电传感器及其制作方法、显示装置
US10854355B2 (en) * 2017-06-12 2020-12-01 3M Innovative Properties Company Method of making a stretchable conductor
WO2019012345A1 (en) * 2017-07-14 2019-01-17 King Abdullah University Of Science And Technology FLEXIBLE AND STRETCH IMAGER, METHOD FOR MANUFACTURING FLEXIBLE, STABLE IMAGER, AND METHOD FOR USING IMAGING DEVICE HAVING FLEXIBLE AND STRETCH IMAGER
WO2019027917A1 (en) 2017-07-31 2019-02-07 Quantum Diamond Technologies, Inc METHODS AND APPARATUS FOR SAMPLE MEASUREMENT
CA3073058A1 (en) * 2017-09-01 2019-03-07 Miroculus Inc. Digital microfluidics devices and methods of using them
CN107634054A (zh) * 2017-09-18 2018-01-26 天津大学 柔性衬底上硅纳米膜转数字逻辑反相器及其制作方法
US10205303B1 (en) * 2017-10-18 2019-02-12 Lumentum Operations Llc Vertical-cavity surface-emitting laser thin wafer bowing control
EP3709775B1 (en) * 2017-11-07 2025-07-02 Dai Nippon Printing Co., Ltd. Stretchable circuit substrate and article
CN108009317A (zh) * 2017-11-09 2018-05-08 武汉大学 一种复合材料的热导率研究仿真和建模方法
CN111343950A (zh) * 2017-11-15 2020-06-26 史密夫及内修公开有限公司 实施传感器的集成伤口监测和/或治疗敷料和系统
CN109859623B (zh) * 2017-11-30 2021-05-18 云谷(固安)科技有限公司 阵列基板及其制备方法及显示屏
KR101974575B1 (ko) * 2017-12-01 2019-05-02 포항공과대학교 산학협력단 싱크로트론 엑스선을 이용한 초소형 다중 경사 구조체 제조 방법
CN108417592A (zh) * 2018-02-12 2018-08-17 中国科学院半导体研究所 红外成像器件及其制备方法、仿生红外球面相机
KR102077306B1 (ko) * 2018-02-14 2020-02-13 광운대학교 산학협력단 실시간 당 모니터링 센서 시스템 및 저온 용액 공정에 기반한 당센서의 제조 방법
CN109346504B (zh) * 2018-09-30 2021-06-29 云谷(固安)科技有限公司 柔性显示面板及显示装置
CN109437091A (zh) * 2018-10-23 2019-03-08 中山大学 一种在弹性衬底上制备微纳结构的方法
CN111148364B (zh) * 2018-11-05 2021-01-26 北京梦之墨科技有限公司 一种柔性可拉伸电路及其制作方法
US11116098B2 (en) * 2018-12-10 2021-09-07 Corning Incorporated Dynamically bendable automotive interior display systems
US12091357B2 (en) 2021-08-05 2024-09-17 Corning Incorporated Dynamically bendable automotive interior display systems
CN109671869B (zh) * 2018-12-12 2020-06-16 武汉华星光电半导体显示技术有限公司 复合膜层的制作方法及显示器件
CN109637366B (zh) * 2018-12-28 2020-10-09 厦门天马微电子有限公司 治具和显示模组的弯折方法
CN111724676B (zh) * 2019-03-21 2022-09-02 昆山工研院新型平板显示技术中心有限公司 可拉伸导线及其制作方法和显示装置
DE102019111964A1 (de) * 2019-05-08 2020-11-12 Danfoss Silicon Power Gmbh Halbleitermodul mit einem ersten Substrat, einem zweiten Substrat und einen Abstandhalter, der die Substrate voneinander trennt
CN110393507B (zh) * 2019-08-01 2020-12-25 清华大学 柔性可延展电子器件的结构设计及其制造方法
CN110797148B (zh) * 2019-10-08 2021-07-30 上海交通大学 适用于无绝缘线圈的超导带材、无绝缘线圈及其制备方法
CN110683508B (zh) * 2019-10-18 2023-05-23 北京元芯碳基集成电路研究院 一种碳纳米管平行阵列的制备方法
CN110808295B (zh) * 2019-11-11 2021-04-23 重庆中易智芯科技有限责任公司 一种三维电致伸缩收集电极的半导体探测器及其制备方法
CN110697646A (zh) * 2019-11-22 2020-01-17 上海幂方电子科技有限公司 一种电子皮肤及其制备方法
US11062936B1 (en) 2019-12-19 2021-07-13 X Display Company Technology Limited Transfer stamps with multiple separate pedestals
CN111063658B (zh) * 2019-12-30 2020-09-29 清华大学 柔性可延展的电子器件的制造方法
US20230119125A1 (en) * 2020-02-12 2023-04-20 Rayleigh Solar Tech Inc. High performance perovskite solar cells, module design, and manufacturing processes therefor
GB2593864B (en) * 2020-02-28 2023-01-04 X Fab France Sas Improved transfer printing for RF applications
CN112967971B (zh) * 2020-05-27 2023-04-18 重庆康佳光电技术研究院有限公司 一种Micro-LED的转移基板及其制备方法
KR102393781B1 (ko) * 2020-07-07 2022-05-04 서울대학교산학협력단 유연 소자
CN112133198B (zh) * 2020-09-29 2022-04-22 厦门天马微电子有限公司 可拉伸显示面板及可拉伸显示装置
CN112606585B (zh) * 2020-12-02 2022-05-31 潍坊歌尔微电子有限公司 器件转印处理方法及微型麦克风防尘装置转印处理方法
KR102591096B1 (ko) * 2020-12-15 2023-10-18 연세대학교 산학협력단 인장 변형을 이용한 광 검출기 제조 방법, 이에 의해 제조되는 광 검출기, 및 그 제조 장치
KR102412729B1 (ko) 2021-01-18 2022-06-23 연세대학교 산학협력단 신축성 디스플레이 장치
KR102553142B1 (ko) * 2021-06-25 2023-07-06 경희대학교 산학협력단 감도 향상 구조를 갖는 전도성 고분자 복합재 기반 압저항 압력센서 및 그 제조방법
KR102582188B1 (ko) * 2021-07-22 2023-09-26 한국과학기술원 레이저 커팅된 플라스틱 기판을 활용한 신축 유기 발광 다이오드 및 그 제작 방법
CN113542755B (zh) * 2021-07-27 2022-06-21 展讯通信(上海)有限公司 二维楔形遮罩的产生方法及系统
CN115915816A (zh) * 2021-08-16 2023-04-04 华为技术有限公司 可拉伸装置及其制作方法
US12217925B2 (en) 2021-08-25 2025-02-04 Beijing Boe Technology Development Co., Ltd. Radio frequency micro-electro-mechanical switch and radio frequency device
CN114286513B (zh) * 2021-11-30 2024-02-06 通元科技(惠州)有限公司 一种非对称预应力消除型led背板及其制作方法
CN114355489B (zh) * 2022-01-13 2023-05-16 西华大学 一种基于dmd数字光刻的曲面复眼透镜及其制备方法
WO2023137539A1 (en) * 2022-01-21 2023-07-27 Decorby Raymond Monolithic optical pressure sensors and transducers
WO2023187834A1 (en) * 2022-03-30 2023-10-05 Council Of Scientific And Industrial Research Method for fabricating silicon chip carriers using wet bulk micromachining for ir detector applications
KR102906153B1 (ko) * 2023-03-02 2025-12-30 경희대학교 산학협력단 3d프린팅과 압축좌굴을 이용한 3차원 필름구조 제작방법, 그 제작방법을 적용한 소자 및 그 제조방법
CN116313797B (zh) * 2023-03-24 2025-08-15 厦门市三安集成电路有限公司 Hemt射频器件的制作方法及hemt射频器件
IT202300009687A1 (it) * 2023-05-15 2024-11-15 Istituto Naz Fisica Nucleare Contenitore per rivelatore di radiazioni e apparato rivelatore
CN119761127B (zh) * 2024-12-20 2025-12-05 湖北江城实验室 半导体结构的设计方法、设计设备及计算机可读存储介质

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6317175B1 (en) 1990-12-31 2001-11-13 Kopin Corporation Single crystal silicon arrayed devices with optical shield between transistor and substrate
US6743982B2 (en) 2000-11-29 2004-06-01 Xerox Corporation Stretchable interconnects using stress gradient films
US6989185B2 (en) 2002-04-30 2006-01-24 National Institute Of Advanced Science And Technology Optical memory

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5763864A (en) * 1980-09-29 1982-04-17 Messerschmitt Boelkow Blohm Solar battery mechanism
US4766670A (en) * 1987-02-02 1988-08-30 International Business Machines Corporation Full panel electronic packaging structure and method of making same
US5086785A (en) * 1989-08-10 1992-02-11 Abrams/Gentille Entertainment Inc. Angular displacement sensors
US5375397B1 (en) * 1993-06-22 1998-11-10 Robert J Ferrand Curve-conforming sensor array pad and method of measuring saddle pressures on a horse
JPH08298334A (ja) * 1995-04-26 1996-11-12 Mitsubishi Electric Corp 太陽電池板
US6784023B2 (en) 1996-05-20 2004-08-31 Micron Technology, Inc. Method of fabrication of stacked semiconductor devices
DE19637626A1 (de) * 1996-09-16 1998-03-26 Bosch Gmbh Robert Flexible Leiterbahnverbindung
FR2786037B1 (fr) * 1998-11-16 2001-01-26 Alstom Technology Barre de conduction electrique de type blinde pour poste electrique haute tension
US6150602A (en) * 1999-05-25 2000-11-21 Hughes Electronics Corporation Large area solar cell extended life interconnect
AU7137800A (en) * 1999-07-21 2001-02-13 E-Ink Corporation Preferred methods for producing electrical circuit elements used to control an electronic display
JP2001352089A (ja) * 2000-06-08 2001-12-21 Showa Shell Sekiyu Kk 熱膨張歪み防止型太陽電池モジュール
GB0029312D0 (en) * 2000-12-01 2001-01-17 Philips Corp Intellectual Pty Flexible electronic device
WO2002071137A1 (en) * 2001-03-06 2002-09-12 Koninklijke Philips Electronics N.V. Display device
US7273987B2 (en) * 2002-03-21 2007-09-25 General Electric Company Flexible interconnect structures for electrical devices and light sources incorporating the same
JP3980918B2 (ja) * 2002-03-28 2007-09-26 株式会社東芝 アクティブマトリクス基板及びその製造方法、表示装置
US20050227389A1 (en) * 2004-04-13 2005-10-13 Rabin Bhattacharya Deformable organic devices
US7491892B2 (en) * 2003-03-28 2009-02-17 Princeton University Stretchable and elastic interconnects
US7465678B2 (en) * 2003-03-28 2008-12-16 The Trustees Of Princeton University Deformable organic devices
GB0323285D0 (en) * 2003-10-04 2003-11-05 Koninkl Philips Electronics Nv Device and method of making a device having a patterned layer on a flexible substrate
WO2005098969A1 (ja) * 2004-04-08 2005-10-20 Sharp Kabushiki Kaisha 太陽電池及び太陽電池モジュール
KR101572992B1 (ko) * 2004-06-04 2015-12-11 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 인쇄가능한 반도체소자들의 제조 및 조립방법과 장치
US7521292B2 (en) * 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US7629691B2 (en) * 2004-06-16 2009-12-08 Honeywell International Inc. Conductor geometry for electronic circuits fabricated on flexible substrates
FR2875339B1 (fr) * 2004-09-16 2006-12-08 St Microelectronics Sa Transistor mos a grille deformable
US20060132025A1 (en) * 2004-12-22 2006-06-22 Eastman Kodak Company Flexible display designed for minimal mechanical strain
US20060160943A1 (en) * 2005-01-18 2006-07-20 Weir James P Water-based flock adhesives for thermoplastic substrates
CN2779218Y (zh) * 2005-02-01 2006-05-10 广德利德照明有限公司 一种管状led装饰灯的连接导线
TWI533459B (zh) * 2005-06-02 2016-05-11 美國伊利諾大學理事會 可印刷半導體結構及製造和組合之相關方法
JP7099160B2 (ja) 2018-08-10 2022-07-12 住友電気工業株式会社 光ファイバの製造方法
US11394720B2 (en) 2019-12-30 2022-07-19 Itron, Inc. Time synchronization using trust aggregation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6317175B1 (en) 1990-12-31 2001-11-13 Kopin Corporation Single crystal silicon arrayed devices with optical shield between transistor and substrate
US6743982B2 (en) 2000-11-29 2004-06-01 Xerox Corporation Stretchable interconnects using stress gradient films
US6989185B2 (en) 2002-04-30 2006-01-24 National Institute Of Advanced Science And Technology Optical memory

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230112256A (ko) 2022-01-20 2023-07-27 공주대학교 산학협력단 물결 모양 배선 및 이의 제조방법
KR20240007422A (ko) * 2022-07-08 2024-01-16 공주대학교 산학협력단 물결형 연신 배선 및 그 제조 방법
KR102749617B1 (ko) * 2022-07-08 2025-01-02 국립공주대학교 산학협력단 물결형 연신 배선 및 그 제조 방법

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