WO2023023976A1 - 射频微电子机械开关、射频装置 - Google Patents

射频微电子机械开关、射频装置 Download PDF

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Publication number
WO2023023976A1
WO2023023976A1 PCT/CN2021/114538 CN2021114538W WO2023023976A1 WO 2023023976 A1 WO2023023976 A1 WO 2023023976A1 CN 2021114538 W CN2021114538 W CN 2021114538W WO 2023023976 A1 WO2023023976 A1 WO 2023023976A1
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Prior art keywords
radio frequency
stretchable
ground electrode
bridge
substrate
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PCT/CN2021/114538
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English (en)
French (fr)
Inventor
史迎利
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京东方科技集团股份有限公司
北京京东方技术开发有限公司
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Application filed by 京东方科技集团股份有限公司, 北京京东方技术开发有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US17/796,501 priority Critical patent/US20240186095A1/en
Priority to CN202180002283.1A priority patent/CN116034517A/zh
Priority to PCT/CN2021/114538 priority patent/WO2023023976A1/zh
Publication of WO2023023976A1 publication Critical patent/WO2023023976A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/016—Switches characterised by the shape having a bridge fixed on two ends and connected to one or more dimples
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/018—Switches not provided for in B81B2201/014 - B81B2201/016
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0109—Bridges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/019—Suspended structures, i.e. structures allowing a movement characterized by their profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H01H2059/0027—Movable electrode connected to ground in the open position, for improving isolation

Definitions

  • the disclosure belongs to the technical field of micro-electro-mechanical systems (MEMS), and in particular relates to a radio-frequency micro-electro-mechanical switch and a radio-frequency device.
  • MEMS micro-electro-mechanical systems
  • RF MEMS is a new technology combining MEMS (micro-electromechanical system) and RF (radio frequency) technology.
  • MEMS devices have the advantages of small size, easy integration, low power consumption, and high reliability, and can replace semiconductors in traditional wireless communication systems. device.
  • RF MEMS can not only be applied to circuits in the form of devices, such as radio frequency microelectromechanical switches, MEMS capacitors, and MEMS resonators; it can also integrate a single device into the same chip to form components and application systems, such as filters, voltage-controlled oscillators, Phase shifters, reconfigurable antennas, etc., which greatly reduce the size of traditional devices, reduce power consumption, and improve system performance.
  • devices such as radio frequency microelectromechanical switches, MEMS capacitors, and MEMS resonators
  • components and application systems such as filters, voltage-controlled oscillators, Phase shifters, reconfigurable antennas, etc.
  • the RF microelectromechanical switch has an increasingly profound influence on the performance of the microelectromechanical system.
  • the present disclosure at least partially solves the problem that the functional performance of the existing RF MEMS switch is easily affected by scenarios such as device bending and deformation, and provides a RF MEMS switch that can adapt to application scenarios such as bending and deformation.
  • radio frequency microelectromechanical switch including:
  • connection film bridge spans the signal electrode, and its two ends are respectively connected to the first ground electrode and the second ground electrode Two ground electrode connections;
  • the connecting membrane bridge includes a stretchable structure, and the stretchable direction of the stretchable structure is the same as the extending direction of the connecting membrane bridge.
  • the connecting membrane bridge extends along a first direction;
  • the stretchable structure comprises:
  • first connection parts arranged along a first direction and extending along a second direction; the first direction intersects the second direction;
  • Two adjacent first connecting parts are connected end-to-end through the first connecting parts.
  • the length of the second connecting portion is not greater than the length of the first connecting portion.
  • the number of stretchable structures includes a plurality
  • the first connecting parts have the same length but different widths; the second connecting parts have the same length and width.
  • the connecting membrane bridge further includes: a main body;
  • One end of the main body part is connected to the first ground electrode through at least one stretchable part, and the other end is connected to the second ground electrode through at least one stretchable part.
  • the main body includes: a connecting membrane bridge base material, the connecting membrane bridge base material has a plurality of opening patterns, and the opening patterns pass through the connecting membrane bridge base material.
  • a plurality of the opening patterns are uniformly arranged.
  • the shape of the opening pattern includes a circle.
  • the thickness of the connecting membrane bridge substrate comprises 1-3 microns.
  • the main body portion and the stretchable portion are integrally constructed.
  • the material connecting the membrane bridges includes a conductive metal.
  • the substrate includes a flexible substrate.
  • the technical solution adopted to solve the technical problem of the present disclosure is a radio frequency device, including any radio frequency micro-electromechanical switch mentioned above.
  • the radio frequency device includes: any one of a filter, a voltage-controlled oscillator, a phase shifter, and a reconfigurable antenna.
  • FIG. 1 is a schematic plan view of a radio frequency microelectromechanical switch according to an embodiment of the present disclosure
  • FIG. 2 is a schematic cross-sectional structure diagram of a radio frequency microelectromechanical switch according to an embodiment of the present disclosure
  • FIG. 3 is a schematic diagram of a radio frequency microelectromechanical switch in a bent state according to an embodiment of the present disclosure
  • FIG. 4 is a schematic structural diagram of a connecting membrane bridge of a radio frequency microelectromechanical switch according to an embodiment of the present disclosure
  • FIG. 5 is a schematic structural diagram of a connecting membrane bridge of another RF microelectromechanical switch according to an embodiment of the present disclosure
  • FIG. 6 is a schematic diagram of a comparison of residual stress relief simulation results of a radio frequency microelectromechanical switch according to an embodiment of the present disclosure
  • reference signs are: 1. base; 2. first ground electrode; 3. signal electrode; 4. second ground electrode; 5. connecting membrane bridge; 51. stretchable part; 52. main body.
  • two structures "set in the same layer” means that they are formed by the same material layer, so they are in the same layer in the layered relationship, but it does not mean that the distance between them and the substrate is equal, nor It means that they have the same structure as other layers between the substrates.
  • patterning process refers to the step of forming a structure with a specific pattern, which can be a photolithography process.
  • the photolithography process includes forming a material layer, coating photoresist, exposure, development, etching, photolithography, etc.
  • One or more steps in steps such as resist stripping; of course, the “patterning process” can also be other processes such as embossing process, inkjet printing process, etc.
  • RF MEMS radio frequency
  • RF MEMS switches are one of the most basic components of electronic circuit systems such as wireless communications, and are widely used in radar detection and wireless communications.
  • RF MEMS switches Compared with traditional PIN diode switches and FET switches, RF MEMS switches have outstanding advantages such as low insertion loss, low electrical power consumption, and small distortion of transmitted signals.
  • RF MEMS switches can be divided into connected membrane bridge RF MEMS switches and cantilever beam RF MEMS switch structures. Among them, the switch insertion loss of the cantilever arm structure is large; in contrast, the switch insertion loss of the connected membrane bridge structure is small and the switching speed is fast.
  • an embodiment of the present disclosure provides a radio frequency micro-electromechanical switch in the form of a membrane bridge 5 .
  • the RF MEMS switch includes: a substrate 1; a signal electrode 3, a first ground electrode 2, a second ground electrode 4 and a connecting membrane bridge 5 arranged on the substrate 1; the connecting membrane bridge 5 spans the signal electrode 3, And its two ends are respectively connected to the first ground electrode 2 and the second ground electrode 4 .
  • the connected membrane bridge RF MEMS switch adopts a bridge structure supported at both ends.
  • the signal electrode 3 is located between the first ground electrode 2 and the second ground electrode 4, and the connecting membrane bridge 5 spans the signal electrode 3, that is, the orthographic projection of the connecting membrane bridge 5 on the substrate 1 and the signal electrode The orthographic projections of 3 on substrate 1 overlap.
  • both ends of the connecting membrane bridge 5 are respectively connected to the first ground electrode 2 and the second ground electrode 4 .
  • a dielectric layer is provided on the upper surface of the signal electrode 3 .
  • RF MEMS switches are usually rigid devices.
  • display technologies such as flexible displays and special-shaped non-planar displays
  • the connecting membrane bridge 5 will be subject to tensile stress due to bending, which will lead to the RF MEMS switch’s own drive response and other functions.
  • the properties are abnormally bad.
  • the connecting membrane bridge 5 includes a stretchable structure 51, and the stretchable direction of the stretchable structure 51 is the same as the extending direction of the connecting membrane bridge 5. That is to say, in this embodiment, based on the setting of the stretchable structure 51, the connecting membrane bridge 5 can have a certain degree of extensibility in its extension direction, so that the RE MSMS switch can be used in application scenarios such as bending and stretching. The realization of tensile stress relief can avoid that in these application scenarios, the functional characteristics such as the driving response of the RE MSMS switching device will not change.
  • the stretchable structure 51 connecting the membrane bridge 5 can achieve its stretchable performance through the design of its shape and material.
  • the stretchable structure 51 can be designed as a zigzag shape based configuration.
  • the configuration includes repeating, connecting and alternating multiple meandering shapes.
  • the zigzag shape can be a ring, N shape, V shape, S shape and other shapes.
  • the connecting membrane bridge 5 extends along the first direction;
  • the stretchable structure 51 includes: a plurality of first connecting parts arranged along the first direction and extending along the second direction; A direction intersects the second direction; a plurality of second connecting parts extending along the first direction; two adjacent first connecting parts are connected end to end by the second connecting parts.
  • the stretchable structure 51 includes a plurality of first connection parts and a plurality of second connection parts.
  • the first connecting portion extends along the second direction (refer to the vertical direction in FIG. 4 ), while the plurality of first connecting portions are arranged along the first direction (refer to the horizontal direction in FIG. 4 ).
  • Each first connection portion has both ends in the second direction.
  • the first end of the first connection part is connected to a first connection part adjacent to it in the first direction through the second connection part, and the second end of the first connection part is connected to the first connection part in the first direction through another second connection part.
  • Another adjacent first connecting portion is connected, and at the same time, one end of each first connecting portion is connected to at most one adjacent first connecting portion.
  • a plurality of first connecting parts are sequentially connected end-to-end through a plurality of second connecting parts, thereby forming a serpentine-shaped characteristic structure, so that the stretchable structure 51 can be stretched in the first direction.
  • the length, width and other dimensions of the first connecting portion, and the length, width and other dimensions of the second connecting portion can be set according to actual needs.
  • the length of the second connecting portion is not greater than the width of the first connecting portion.
  • the stretchable direction of the stretchable structure 51 is the first direction, and its extending direction is also the first direction.
  • the length of the second connection part is the dimension of the second connection part in the first direction.
  • the width of the first connection part is the dimension of the first connection part in the first direction. It can be understood that the stretchable deformation of the stretchable structure 51 is related to the width of the first connection part and the length of the second connection part. When the length of the second connecting portion is too long, the overall structure of the stretchable structure 51 is likely to be loose, which is not conducive to the overall stability of the connecting membrane bridge 5 .
  • the stretchable structure 51 is relatively stable, and at the same time has a certain amount of stretchable deformation, so that the RE MSMS switching device In application scenarios such as stretching and stretching, the functional characteristics such as drive response will not change.
  • the number of the stretchable structures 51 includes multiple; in some of the stretchable structures 51 , the widths of the first connecting parts are different. Referring to Fig. 4, in the partially stretchable structure 51, the lengths of the first connecting parts of different stretchable structures 51 are the same, but the widths are different. At the same time, the lengths of the second connecting parts in the stretchable structures 51 are the same, and the widths of the second connecting parts are also the same. Wherein, in the case that the second connecting portions of each stretchable structure 51 are the same, the width of the first connecting portion determines the structural stability of the stretchable structure 51 in the second direction and the overall support of the stretchable structure 51 strength.
  • stretchable structures 51 of different configurations can be provided in multiple different regions of the connecting membrane bridge 5 , so as to meet the different tensile stresses experienced by different regions of the connecting membrane bridge 5 in scenarios such as bending and stretching.
  • the connecting membrane bridge 5 may include a first stretchable structure 51 and a second stretchable structure 51 located on both sides of the first stretchable structure 51 .
  • the first stretchable structure 51 includes a plurality of first connecting parts and a plurality of second connecting parts;
  • the second stretchable structure 51 may include a plurality of first connecting parts and a plurality of second connecting parts .
  • the width of the first connecting portion in the first stretchable structure 51 is greater than the width of the first connecting portion in the second stretchable structure 51 .
  • the first stretchable structure 51 and the second stretchable structure 51 have the same length of each first connecting portion, the same length of each second connecting portion, and the same width of each second connecting portion.
  • the connecting membrane bridge 5 is not limited to the first stretchable structure 51 and the second stretchable structure 51, and may also include stretchable structures 51 of other configurations. will not be described in detail here.
  • the connecting membrane bridge 5 further includes: a main body 52; one end of the main body 52 is connected to the first ground electrode 2 through at least one stretchable structure 51, and the other end is connected to the first ground electrode 2 through at least one One stretchable structure 51 is connected to the second ground electrode 4 .
  • the main body 52 can be a plate-shaped structure, and the two ends of the main body 52 are respectively connected to the first ground electrode 2 and the second ground electrode 4 through the stretchable structure 51 .
  • each end of the main body part 52 may be connected to a corresponding ground electrode through one or more stretchable junction structures.
  • both ends of the main body 52 can be respectively connected to the ground electrode through two stretchable structures 51 .
  • the stretching direction of the two stretchable structures 51 is consistent with the extending direction of the main body 52 .
  • the main body portion 52 includes: a base material of the connecting membrane bridge 5 having a plurality of opening patterns on the base material of the connecting membrane bridge 5 , and the opening patterns run through the base material of the connecting membrane bridge 5 .
  • the main body portion 52 is located above the signal electrode 3 .
  • RF MEMS switches need to be integrated with other microwave devices, and the driving voltage of RF MEMS switches needs to be as small as possible.
  • the elastic coefficient of the connecting membrane bridge 5 is closely related to the driving voltage, and reducing the height of the connecting membrane bridge 5 or reducing the elastic coefficient of the connecting membrane bridge 5 can reduce the driving voltage required by the switch.
  • reducing the bridge height not only puts forward high requirements on the switching process, but also reduces the isolation of the switch, increases the reflection loss of the switch, and deteriorates other performances of the switch.
  • a plurality of opening patterns are provided on the base material of the connecting membrane bridge 5, thereby reducing the equivalent elastic modulus of the connecting membrane bridge 5, thereby reducing the driving voltage required by the switch.
  • a plurality of opening patterns are evenly arranged. Evenly arranging a plurality of opening patterns on the base material of the connecting membrane bridge 5 helps to uniform distribution of the equivalent elastic modulus of the main body 52, thereby maintaining stable functional characteristics of the RF MEMS switching device.
  • the plurality of opening patterns may be arranged in an array, or may be evenly arranged according to other predetermined rules.
  • the shape of the opening pattern includes a circle.
  • the opening pattern runs through the base film layer of the connecting film bridge 5 .
  • the shape of the opening pattern is circular, the openings at the various places of the base film layer of the connecting membrane bridge 5 are smooth cut surfaces, and there is no zigzag opening. Uniform, not easy to produce cracks or fractures, and improve the structural stability of the connecting membrane bridge 5 .
  • the shape of the opening pattern may also include an ellipse, a closed pattern formed by splicing arcs and lines, an S-shape, and other patterns with arcs and lines.
  • the shape of the opening pattern may also include polygonal shapes such as rectangles and triangles, which will not be described in detail in the embodiments of the present disclosure.
  • the material connecting the base material of the membrane bridge 5 may include conductive metal.
  • the conductive metal may include copper, aluminum and other metals with relatively high conductivity.
  • the thickness of the substrate of the connecting membrane bridge 5 includes 1-3 microns.
  • the connecting film bridge 5 bridges over the signal electrode 3 and is separated from the signal electrode 3 by a certain space.
  • the connecting membrane bridge 5 itself needs to have a certain supporting strength. It can be understood that when the thickness of the base material of the connecting membrane bridge 5 is too thin, the hardness of the device will be weakened, and the support for itself cannot be realized, and collapse is prone to occur.
  • connecting membrane bridge 5 base material when the thickness of connecting membrane bridge 5 base material is too thick, then its hardness is bigger, not easy to bend, cause when it works, need bigger driving voltage to drive its bending and contact with signal electrode 3, can increase RF like this. Power dissipation of MEMS switching devices.
  • Experimental data show that when the thickness of the base material of the connecting membrane bridge 5 is in the range of 1-3 microns, the connecting membrane bridge 5 can achieve better self-support, and the demand for driving voltage is not too high.
  • the main body 52 and the stretchable structure 51 are integrally structured. That is to say, the main body 52 and the stretchable structure 51 can be formed through one patterning process.
  • the main body portion 52 may include a whole plate structure, or a patterned plate structure.
  • the stretchable sheet can be patterned, for example, it can be a patterned sheet composed of a plurality of first connecting parts and a plurality of second connecting parts.
  • the shape and connection method of the first connection part and the second connection part can refer to the foregoing content, and will not be described in detail here.
  • the substrate 1 includes a flexible substrate 1 .
  • the material of the flexible substrate 1 may include flexible materials such as polyimide.
  • RF MEMS switches based on flexible substrates have bendable properties. When the RF MEMS switch is in a bending state, the connecting membrane bridge 5 can release the tensile stress in the bending state based on the stretchable structure 51, thereby avoiding the failure of the driving response of the connecting membrane bridge 5 due to excessive tensile stress.
  • the substrate 1 may include a stretchable substrate 1 .
  • the stretchable structure 51 connected to the membrane bridge 5 can be stretched according to the stretching of the substrate 1 .
  • the RF MEMS switch provided in this embodiment can adapt to the stretching of the substrate 1, thereby avoiding the failure of the driving response of the connecting membrane bridge 5 due to excessive tensile stress.
  • the base 1 may also include a shaped base 1 .
  • the profiled substrate 1 may include a curved substrate 1, an arc substrate 1 and other non-planar substrates.
  • an embodiment of the present disclosure further provides a radio frequency device, which may include any radio frequency microelectromechanical switch described above.
  • the radio frequency device includes: any one of a tunable filter, a voltage-controlled oscillator, a phase shifter, and a reconfigurable antenna.
  • RF MEMS switches can be used in higher frequency bands with low loss, so they can play an important role in microwave circuits.
  • the bridge membrane structure of RF MEMS switches can be widely used in phase shifters, tunable antennas, switched tunable capacitors, tunable filters, and phased array antennas.
  • Microwave filters that control two or more passbands based on RF MEMS switches or PIN diodes can switch between these passbands, which is equivalent to a filter that simultaneously realizes the functions of two or more filters, and It can also be used as a circuit switch, and has a wide range of applications in personal communication, radar, and satellite communication systems, and has important functions in realizing channel selection, duplexing, and image suppression.
  • Reconfigurable antennas can use RF MEMS switches to control the working mode of each unit of the antenna. Adding switches at different branches of the antenna can realize the reconfigurable frequency of the antenna, and some can also realize the reconfigurable pattern of the antenna. Compared with PIN switches and FET switches, MEMS switches have smaller losses, faster response speeds, and better performance, which can significantly reduce the loss of antennas at high frequencies.
  • the MEMS switch can be applied to a microstrip antenna of a MIMO communication system, and the MEMS switch is used to control the working mode of each unit of the antenna. When the switch is in the on state, each unit works relatively independently.
  • the antenna can use the feeding method of coplanar waveguide, and the working frequency of the antenna can be switched between 2.26, 2.7 and 3.15 GHz by controlling the on and off of the MEMS switch.

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Abstract

本公开提供一种射频微电子机械开关、射频装置，属于微电子机械系统技术领域，其可至少部分解决现有的射频微电子机械开关功能性能易受器件弯曲变形等场景影响的问题。本公开的频微电子机械开关包括：基底；设置在基底上的信号电极、第一地电极、第二地电极和连接膜桥；所述连接膜桥横跨所述信号电极，且其两端分别与所述第一地电极和所述第二地电极连接；连接膜桥包括可拉伸结构，所述可拉伸结构的可拉伸方向与所述连接膜桥的延伸方向相同。

Description

射频微电子机械开关、射频装置 技术领域
本公开属于微电子机械系统(MEMS)技术领域，具体涉及一种射频微电子机械开关、射频装置。
背景技术
RF MEMS是MEMS(微机电系统)与RF(射频)技术相结合的一门新技术，MEMS器件具有体积小、易集成、功耗低、可靠性高等优点，可代替传统无线通信系统中的半导体器件。
RF MEMS不仅可以以器件的方式应用于电路，例如射频微电子机械开关、MEMS电容、MEMS谐振器；还可以将单个器件集成到同一芯片组成组件和应用系统，例如滤波器、压控振荡器、移相器、可重构天线等，这大大缩减了传统器件的体积，降低了功耗，提升了系统的性能。RF射频微电子机械开关作为RF MEMS中的重要器件之一，其性能对微机电系统的影响日益深远。
发明内容
本公开至少部分解决现有的射频微电子机械开关功能性能易受器件弯曲变形等场景影响的问题，提供一种能够适应弯曲变形等应用场景的射频微电子机械开关。
解决本公开技术问题所采用的技术方案是一种射频微电子机械开关，包括：
基底；
设置在基底上的信号电极、第一地电极、第二地电极和连接膜桥；所述连接膜桥横跨所述信号电极，且其两端分别与所述第一地电极和所述第二地电极连接；
连接膜桥包括可拉伸结构，所述可拉伸结构的可拉伸方向与所述 连接膜桥的延伸方向相同。
在一些实施例中，所述连接膜桥沿第一方向延伸；所述可拉伸结构包括：
沿第一方向排列，并沿第二方向延伸的多个第一连接部；所述第一方向与所述第二方向相交；
沿所述第一方向延伸的多个第二连接部；
相邻两个所述第一连接部通过所述第一连接部首尾连接。
在一些实施例中，所述第二连接部的长度不大于所述第一连接部的长度。
在一些实施例中，所述可拉伸结构的数量包括多个；
部分所述可拉伸结构中，第一连接部的长度相同，宽度不同；所述第二连接部的长度和宽度均相同。
在一些实施例中，所述连接膜桥还包括：主体部；
所述主体部的一端通过至少一个所述可拉伸部与所述第一地电极连接，另一端通过至少一个所述可拉伸部与所述第二地电极连接。
在一些实施例中，，所述主体部包括：连接膜桥基材，所述连接膜桥基材上具有多个开口图案，所述开口图案贯穿所述连接膜桥基材。
在一些实施例中，多个所述开口图案均匀排布。
在一些实施例中，所述开口图案的形状包括圆形。
在一些实施例中，所述连接膜桥基材的厚度包括1-3微米。
在一些实施例中，所述主体部与所述可拉伸部为一体结构。
在一些实施例中，连接膜桥的材料包括导电金属。
在一些实施例中，所述基底包括柔性基底。
解决本公开技术问题所采用的技术方案是一种射频装置，包括上述任意一种射频微电子机械开关。
在一些实施例中，所述射频装置包括：滤波器、压控振荡器、移 相器、可重构天线中的任意一者。
附图说明
附图是用来提供对本公开的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本公开，但并不构成对本公开的限制。在附图中：
图1为本公开的实施例的一种射频微电子机械开关的平面结构示意图；
图2为本公开的实施例的一种射频微电子机械开关的截面结构示意图；
图3为本公开的实施例的一种射频微电子机械开关在弯曲状态下的示意图；
图4为本公开的实施例的一种射频微电子机械开关的连接膜桥的结构示意图；
图5为本公开的实施例的另一种射频微电子机械开关的连接膜桥的结构示意图；
图6为本公开的实施例的一种射频微电子机械开关的残余应力消除仿真结果比较示意图；
其中，附图标记为：1、基底；2、第一地电极；3、信号电极；4、第二地电极；5、连接膜桥；51、可拉伸部；52、主体部。
具体实施方式
为使本领域技术人员更好地理解本公开的技术方案，下面结合附图和具体实施方式对本公开作进一步详细描述。
在本公开中，两结构“同层设置”是指二者是由同一个材料层形成的，故它们在层叠关系上处于相同层中，但并不代表它们与基底间的距离相等，也不代表它们与基底间的其它层结构完全相同。
在本发明中，“构图工艺”是指形成具有特定的图形的结构的步 骤，其可为光刻工艺，光刻工艺包括形成材料层、涂布光刻胶、曝光、显影、刻蚀、光刻胶剥离等步骤中的一步或多步；当然，“构图工艺”也可为压印工艺、喷墨打印工艺等其它工艺。
以下将参照附图更详细地描述本公开。在各个附图中，相同的元件采用类似的附图标记来表示。为了清楚起见，附图中的各个部分没有按比例绘制。此外，在图中可能未示出某些公知的部分。
在下文中描述了本公开的许多特定的细节，例如部件的结构、材料、尺寸、处理工艺和技术，以便更清楚地理解本公开。但正如本领域的技术人员能够理解的那样，可以不按照这些特定的细节来实现本公开。
采用微机电系统(MEMS)技术设计制作的射频(RF)开关具有插入损耗低、电功率消耗小等独特的优点。RF MEMS开关是无线通讯等电子电路系统的最基本元件之一，在雷达探测、无线通讯等方面的应用十分广泛。与传统的PIN型二极管开关和FET开关相比，RF MEMS开关具有插入损耗低、电功率消耗和传输信号失真小等突出优点。RF MEMS开关根据几何结构的不同，可分为连接膜桥式RF MEMS开关和悬臂梁式RF MEMS开关结构。其中，悬梁臂结构的开关插入损耗较大；相比之下，采用连接膜桥结构的开关插入损耗较小，开关速度快。
参见图1至图7所示，本公开实施例提供一种连接膜桥5式的射频微电子机械开关。该RF MEMS开关包括：基底1；设置在基底1上的信号电极3、第一地电极2、第二地电极4和连接膜桥5；所述连接膜桥5横跨所述信号电极3，且其两端分别与所述第一地电极2和所述第二地电极4连接。
连接膜桥式RF MEMS开关采用两端支撑的桥式结构。参见图2所示，信号电极3位于第一地电极2与第二地电极4之间，连接膜桥 5横跨信号电极3，也即连接膜桥5在基底1上的正投影与信号电极3在基底1上的正投影存在交叠。同时，连接膜桥5的两端分别与第一地电极2和第二地电极4连接。当向信号电极3加载驱动电压后，由于在电极之间的静电吸引力，连接膜桥5朝下弯曲，当驱动电压达到一定程度时，连接膜桥5弯曲到达下电极，从而形成通路。
在一些示例中，为了在隔离直流信号的同时实现交流信号的导通，在信号电极3的上表面会设置一层介质层。
现有技术中，RF MEMS开关通常为刚性器件。而伴随着柔性显示、异形非平面显示等显示技术的发展，当刚性RF MEMS开关应用于其中时，连接膜桥5会受到由于弯曲产生的拉伸应力，导致RF MEMS开关自身的驱动响应等功能特性出现异常不良。
本公开实施例提供的RF MEMS开关中，连接膜桥5包括可拉伸结构51，所述可拉伸结构51的可拉伸方向与所述连接膜桥5的延伸方向相同。也就是说，本实施例中，基于可拉伸结构51的设置，使得连接膜桥5在其的延伸方向上能够具有一定延展性，从而使得RE MSMS开关能够在弯曲、拉伸等应用场景下的实现拉伸应力消除，避免在这些应用场景下，RE MSMS开关器件的驱动响应等功能特性不产生变化。
本公开实施例中，连接膜桥5的可拉伸结构51可通过其形状、材料等的设计，实现其可拉伸的性能。在一些实施例中，可拉伸结构51可设计为基于曲折形状的构型。该构型和包括重复的、连接的和交替的多个曲折形状。其中，曲折形状可以为环形，可以N形，V形，还可以为S形等各种形状。
在一些实施例中，所述连接膜桥5沿第一方向延伸；所述可拉伸结构51包括：沿第一方向排列，并沿第二方向延伸的多个第一连接部；所述第一方向与所述第二方向相交；沿所述第一方向延伸的多个第二 连接部；相邻两个所述第一连接部通过所述第二连接部首尾连接。
参照图4所示，可拉伸结构51包括多个第一连接部和多个第二连接部。第一连接部沿第二方向(参照图4中竖直方向)延伸，同时多个第一连接部沿第一方向(参照图4中水平方向)排列。每个第一连接部均具有在第二方向上的两端。第一连接部的第一端通过第二连接部与其在第一方向上相邻的一个第一连接部连接，第一连接部的第二端通过另一第二连接部与其在第一方向上相邻的另一个第一连接部连接，同时，每个第一连接部的一端至多与一个相邻第一连接部连接。以此类推，通过多个第二连接部将多个第一连接部依次首尾连接，从而形成蛇形形状特征结构，使得可拉伸结构51在第一方向上可拉伸。
其中，第一连接部的长度、宽度等尺寸，第二连接部的长度、宽度等尺寸可根据实际需求进行设置。
在一些实施例中，所述第二连接部的长度不大于所述第一连接部的宽度。参见图4所示，可拉伸结构51的可拉伸方向为第一方向，其延伸方向也为所述第一方向。第二连接部的长度为第二连接部在第一方向上的尺寸。第一连接部的宽度为第一连接部在第一方向上的尺寸可以理解的是，可拉伸结构51的可拉伸形变量与第一连接部的宽度和第二连接部的长度相关。当第二连接部的长度过长时，容易导致可拉伸结构51整体结构松散，不利于连接膜桥5整体的稳定性。本公开实施例中，通过对第二连接部的长度及第一连接部的宽度限定，使得可拉伸结构51较为稳定，同时具有一定的可拉伸形变量，以使RE MSMS开关器件在弯曲、拉伸等应用场景下，驱动响应等功能特性不产生变化。
在一些实施例中，所述可拉伸结构51的数量包括多个；部分所述可拉伸结构51中，第一连接部的宽度不同。参见图4所示，在部分可拉伸结构51中，不同可拉伸结构51的第一连接部的长度相同，宽度 不同。同时，各可拉伸结构51中的第二连接部的长度相同，各第二连接部的宽度也相同。其中，在各可拉伸结构51的第二连接部相同的情况下，第一连接部的宽度决定了可拉伸结构51在第二方向上的结构稳定性以及可拉伸结构51的整体支撑强度。其中，第一连接部的宽度越大，越可拉伸结构51的整体支撑强度越高。本实施例中，可在连接膜桥5的多个不同区域设置不同构型的可拉伸结构51，从而能够满足连接膜桥5在弯曲拉伸等场景下不同区域受到的不同拉伸应力。
参见图4所示，在一些实施例中，连接膜桥5可包括第一可拉伸结构51和位于第一可拉伸结构51两侧的第二可拉伸结构51。其中，第一可拉伸结构51包括多个所述第一连接部和多个所述第二连接部；第二可拉伸结构51可包括多个第一连接部和多个第二连接部。第一可拉伸结构51中的第一连接部的宽度大于第二可拉伸结构51中的第一连接部的宽度。同时，第一可拉伸结构51与第二可拉伸结构51中各第一连接部的长度相同，各第二连接部的长度相同，各第二连接部的宽度相同。可以理解的是，在另一些实施例中，连接膜桥5可不限于第一可拉伸结构51和第二可拉伸结构51，还可以包括其他构型的可拉伸结构51，本实施例中在此不再详述。
在一些实施例中，所述连接膜桥5还包括：主体部52；所述主体部52的一端通过至少一个所述可拉伸结构51与所述第一地电极2连接，另一端通过至少一个所述可拉伸结构51与所述第二地电极4连接。参照图5所示，本公开实施例中，主体部52可为板状结构，主体部52的两端分别通过可拉伸结构51与第一地电极2和第二地电极4连接。其中，主体部52的各端可通过一个或者多个可拉伸接结构与相应的地电极连接。参见图2所示，主体部52的两端各子可分别通过两个可拉伸结构51与地电极连接。该两个可拉伸结构51的卡拉伸方向与主体部52的延伸方向一致。
在一些实施例中，所述主体部52包括：连接膜桥5基材，所述连接膜桥5基材上具有多个开口图案，所述开口图案贯穿所述连接膜桥5基材。参见图2和图5所示，主体部52位于信号电极3上方。通过在连接膜桥5基材上设置开口图案，可以改变连接膜桥5在加工过程中的残余应力，从而降低连接膜桥5基材的等效弹性模量。RF MEMS开关的驱动电压与连接膜桥5密切相关。在实际应用中，RF MEMS开关需要与其它微波器件集成，需要RF MEMS开关的驱动电压越小越好。根据驱动电极的计算公式可得出，连接膜桥5的弹性系数与驱动电压密切相关，减小连接膜桥5高度或者减小连接膜桥5弹性系数都能够降低开关所需的驱动电压。然而，减小桥高不仅对开关工艺提出了很高要求，也会降低开关的隔离度，增大开关的反射损耗，会恶化开关的其它性能。同样，就降低弹性模量而言，连接膜桥5越薄越好，但是对于产品可靠性来说，当连接膜桥5厚度减小到一定程度时，连接膜桥5容易在开关工作时被拉断。本实施例中通过连接膜桥5基材上设置多个开口图案，从而降低连接膜桥5的等效弹性模量，从而降低开关所需的驱动电压。
参见图6所示，根据实验数据表明，当RF MEMS开关器件在发生曲率半径为5mm的弯曲变形时，由于弯曲变形给现有技术中常规连接膜桥5带来的拉应力为0.335MPa。本实施例提供的RF MEMS开关器件在发生曲率半径为5mm的弯曲变形时，由于弯曲变形给连接膜桥5带来的拉应力为0.058MPa，仅为现有技术中原结构拉应力的17.3％，起到了较为理想的应力消除效果，从而能够明显改善现有技术中由于拉应力过大所导致的RF MEMS开关驱动响应失效问题。
参见图5所示，在一些实施例中，多个所述开口图案均匀排布。通过令多个开口图案在连接膜桥5基材上均匀排布，有助于主体部52整体的等效弹性模量分布均一，从而使得RF MEMS开关器件的功能 特征维持稳定。可选的，本实施例中，多个开口图案可呈阵列排布，或者也可按照其它预定规则均匀排布。
在一些实施例中，所述开口图案的形状包括圆形。开口图案贯穿连接膜桥5基材膜层。当开口图案的形状为圆形时，连接膜桥5基材膜层各处的开口为圆滑切面，不存在锯齿状开口，从而在连接膜桥5受力拉伸时，开口各处的受力均匀，不易产生裂缝或者断裂情况，提高连接膜桥5的结构稳定性。可以理解的是，本公开实施例中，开口图案的形状也可以包括椭圆形、圆弧与线条拼接形成的封闭图案、S形等带有圆弧线条的图案。或者，开口图案的形状也可以包括矩形、三角形等多边形状，本公开实施例中不再详述。
在一些实施例中，连接膜桥5基材的材料可包括导电金属。具体的，该导电金属可包括铜、铝等具有较高导电率的金属。
在一些实施例中，所述连接膜桥5基材的厚度包括1-3微米。本公开实施例中，连接膜桥5跨接于信号电极3上方，与信号电极3之间间隔一定空间。为了在断开情况下，连接膜桥5不会自然下垂与信号电极3接触，连接膜桥5自身需要具有一定的支撑强度。可以理解的是，当连接膜桥5基材的厚度过薄时，会减弱器硬度，无法实现对自身的支撑，易出现塌陷情况。而当连接膜桥5基材的厚度过厚时，则其硬度较大，不容易弯曲，导致在其工作时需要较大的驱动电压才能驱动其弯曲与信号电极3接触，这样会增大RF MEMS开关器件的功耗。经实验数据表明，当连接膜桥5基材的厚度在1-3微米范围内时，连接膜桥5既能够实现较好的自我支撑，且对驱动电压的需求也不过过高。
在一些实施例中，所述主体部52与所述可拉伸结构51为一体结构。也即主体部52可与可拉伸结构51可通过一次构图工艺形成。其中，主体部52可包括整面板材结构，或者为图案化的板材结构。可拉 伸可为图案化的板材，例如可为有多个第一连接部和多个第二连接部共同构成的图案化板材。其中，第一连接部与第二连接部的形貌及连接方式可参考前述内容，在此不再详述。
在一些实施例中，所述基底1包括柔性基底1。该柔性基底1的材料可包括聚酰亚胺等柔性材料。基于柔性基底1的RF MEMS开关具有可弯曲特性。当RF MEMS开关处于弯曲状态时，连接膜桥5可基于可拉伸结构51释放弯曲状态下的拉伸应力，从而避免因拉伸应力过大导致连接膜桥5驱动响应失效问题。
在一些实施例中，所述基底1可包括可拉伸基底1。当基底1处于拉伸状态时，连接膜桥5的可拉伸结构51可适应于基底1的拉伸而进行拉伸。相对于现有技术中的刚性RF MEMS开关，本实施例提供的RF MEMS开关可适应基底1的拉伸，从而避免因拉伸应力过大导致连接膜桥5驱动响应失效问题。
可选的，在一些实施例中，所述基底1还可包括异形基底1。该异形基底1可包括曲面基底1，弧面基底1等非平面基底。
另一方面，本公开实施例还提供一种射频装置，可包括上述任意一种射频微电子机械开关。
可选的，在一些实施例中，所述射频装置包括：可调滤波器、压控振荡器、移相器、可重构天线中的任意一者。
与传统的开关相比，RF MEMS开关可以使用在较高的频段上，损耗小，因此可在微波电路中可以发挥重要的作用。RF MEMS开关的桥膜结构在移相器、可调谐天线、开关式可调电容及可调谐滤波器、相控阵天线中能够广泛应用。
基于RF MEMS开关或PIN二极管控制两个或多个通带的微波滤波器，可在这几个通带之间切换，相当于一个滤波器同时实现了两个 或者多个滤波器的功能，而且又可充当电路的开关，在个人通信、雷达及卫星通信系统中具有广泛的应用，在实现信道选择、双工、镜像抑制等方面有着重要的功用。
可重构天线(例如频率可调的相控阵雷达等)可使用RF MEMS开关开控制天线各个单元的工作方式。在天线的不同分支处加入开关，可以实现天线的频率可重构，有的还可以实现天线的方向图可重构等。相对于PIN开关和FET开关，MEMS开关的损耗更小，响应速度更快，性能更优，能够明显降低天线高频时的损耗。在一些实施例中，MEMS开关可应用于MIMO通信系统的微带天线，使用MEMS开关来控制天线各个单元的工作方式。当开关处于开态时，各个单元相对独立地进行工作，由于单元尺寸较小，此时工作于较高的频段；当开关处于关态时，将所有天线单元连接在一起作为一个整体单元来工作，此时天线的尺寸变大，工作频段相应变低。该天线可使用共面波导的馈电方式，通过控制MEMS开关的通断从而能够使天线的工作频率在2.26，2.7和3.15GHz之间进行切换。
应当说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括要素的过程、方法、物品或者设备中还存在另外的相同要素。
依照本公开的实施例如上文所述，这些实施例并没有详尽叙述所有的细节，也不限制该公开仅为所述的具体实施例。显然，根据以上 描述，可作很多的修改和变化。本说明书选取并具体描述这些实施例，是为了更好地解释本公开的原理和实际应用，从而使所属技术领域技术人员能很好地利用本公开以及在本公开基础上的修改使用。本公开仅受权利要求书及其全部范围和等效物的限制。

Claims (14)

  1. 一种射频微电子机械开关，其中，包括：
    基底；
    设置在基底上的信号电极、第一地电极、第二地电极和连接膜桥；所述连接膜桥横跨所述信号电极，且其两端分别与所述第一地电极和所述第二地电极连接；
    连接膜桥包括可拉伸结构，所述可拉伸结构的可拉伸方向与所述连接膜桥的延伸方向相同。
  2. 根据权利要求1所述的射频微电子机械开关，其中，所述连接膜桥沿第一方向延伸；所述可拉伸结构包括：
    沿第一方向排列，并沿第二方向延伸的多个第一连接部；所述第一方向与所述第二方向相交；
    沿所述第一方向延伸的多个第二连接部；
    相邻两个所述第一连接部通过所述第一连接部首尾连接。
  3. 根据权利要求2所述的射频微电子机械开关，其中，所述第二连接部的长度不大于所述第一连接部的长度。
  4. 根据权利要求2所述的射频微电子机械开关，其中，所述可拉伸结构的数量包括多个；
    部分所述可拉伸结构中，第一连接部的长度相同，宽度不同；所述第二连接部的长度和宽度均相同。
  5. 根据权利要求1至4中任意一项所述的射频微电子机械开关，其中，所述连接膜桥还包括：主体部；
    所述主体部的一端通过至少一个所述可拉伸部与所述第一地电极 连接，另一端通过至少一个所述可拉伸部与所述第二地电极连接。
  6. 根据权利要求5所述的射频微电子机械开关，其中，所述主体部包括：连接膜桥基材，所述连接膜桥基材上具有多个开口图案，所述开口图案贯穿所述连接膜桥基材。
  7. 根据权利要求6所述的射频微电子机械开关，其中，多个所述开口图案均匀排布。
  8. 根据权利要求6所述的射频微电子机械开关，其中，所述开口图案的形状包括圆形。
  9. 根据权利要求6所述的射频微电子机械开关，其中，所述连接膜桥基材的厚度包括1-3微米。
  10. 根据权利要求5所述的射频微电子机械开关，其中，所述主体部与所述可拉伸部为一体结构。
  11. 根据权利要求8所述的射频微电子机械开关，其中，连接膜桥的材料包括导电金属。
  12. 根据权利要求1所述的射频微电子机械开关，其中，所述基底包括柔性基底。
  13. 一种射频装置，其中，包括权利要求1至12中任意一项所述的射频微电子机械开关。
  14. 根据权利要求13所述的射频装置，其中，所述射频装置包括：滤波器、压控振荡器、移相器、可重构天线中的任意一者。
PCT/CN2021/114538 2021-08-25 2021-08-25 射频微电子机械开关、射频装置 WO2023023976A1 (zh)

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