KR101809073B1 - 근적외광 흡수층 형성재료 및 적층막 - Google Patents
근적외광 흡수층 형성재료 및 적층막 Download PDFInfo
- Publication number
- KR101809073B1 KR101809073B1 KR1020110037715A KR20110037715A KR101809073B1 KR 101809073 B1 KR101809073 B1 KR 101809073B1 KR 1020110037715 A KR1020110037715 A KR 1020110037715A KR 20110037715 A KR20110037715 A KR 20110037715A KR 101809073 B1 KR101809073 B1 KR 101809073B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- polymer
- nir
- independently
- absorbing
- Prior art date
Links
- 0 CC(C(C)(*)C(COC(C)(C)C)=O)N=C Chemical compound CC(C(C)(*)C(COC(C)(C)C)=O)N=C 0.000 description 31
- AQSRLDLOBQHSAH-UHFFFAOYSA-N FC(CCCN(CCCC(F)(F)F)c(cc1)ccc1N(c(cc1)ccc1N(CCCC(F)(F)F)CCCC(F)(F)F)c(cc1)ccc1N(CCCC(F)(F)F)CCCC(F)(F)F)(F)F Chemical compound FC(CCCN(CCCC(F)(F)F)c(cc1)ccc1N(c(cc1)ccc1N(CCCC(F)(F)F)CCCC(F)(F)F)c(cc1)ccc1N(CCCC(F)(F)F)CCCC(F)(F)F)(F)F AQSRLDLOBQHSAH-UHFFFAOYSA-N 0.000 description 1
- SNLFYGIUTYKKOE-UHFFFAOYSA-N Nc(cc1)ccc1N(c(cc1)ccc1N)c(cc1)ccc1N Chemical compound Nc(cc1)ccc1N(c(cc1)ccc1N)c(cc1)ccc1N SNLFYGIUTYKKOE-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B23/00—Methine or polymethine dyes, e.g. cyanine dyes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Optical Filters (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010098453 | 2010-04-22 | ||
JPJP-P-2010-098453 | 2010-04-22 | ||
JP2011047254A JP5768410B2 (ja) | 2010-04-22 | 2011-03-04 | 近赤外光吸収膜形成材料及び積層膜 |
JPJP-P-2011-047254 | 2011-03-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110118102A KR20110118102A (ko) | 2011-10-28 |
KR101809073B1 true KR101809073B1 (ko) | 2017-12-14 |
Family
ID=44816091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020110037715A KR101809073B1 (ko) | 2010-04-22 | 2011-04-22 | 근적외광 흡수층 형성재료 및 적층막 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20110262863A1 (zh) |
JP (1) | JP5768410B2 (zh) |
KR (1) | KR101809073B1 (zh) |
TW (1) | TWI477529B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11561331B2 (en) | 2019-09-10 | 2023-01-24 | Samsung Electronics Co., Ltd. | Combination structures and optical filters and image sensors and camera modules and electronic devices |
US11569284B2 (en) | 2019-09-03 | 2023-01-31 | Samsung Electronics Co., Ltd. | Combination structures and optical filters and image sensors and camera modules and electronic devices |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130157463A1 (en) * | 2011-12-14 | 2013-06-20 | Shin-Etsu Chemical Co., Ltd. | Near-infrared absorbing film composition for lithographic application |
WO2013172145A1 (ja) * | 2012-05-15 | 2013-11-21 | 株式会社Adeka | 光硬化性樹脂組成物 |
JP6477270B2 (ja) * | 2015-06-09 | 2019-03-06 | 信越化学工業株式会社 | パターン形成方法 |
JP6783435B2 (ja) * | 2015-10-01 | 2020-11-11 | トルンプ フォトニック コンポーネンツ ゲーエムベーハー | 発光デバイス |
JP7434773B2 (ja) * | 2019-09-17 | 2024-02-21 | Toppanホールディングス株式会社 | 赤外光カットフィルター、固体撮像素子用フィルター、固体撮像素子、および、固体撮像素子用フィルターの製造方法 |
JP7434772B2 (ja) * | 2019-09-17 | 2024-02-21 | Toppanホールディングス株式会社 | 赤外光カットフィルター、固体撮像素子用フィルター、固体撮像素子、および、固体撮像素子用フィルターの製造方法 |
JP7459468B2 (ja) * | 2019-09-17 | 2024-04-02 | Toppanホールディングス株式会社 | 赤外光カットフィルター、固体撮像素子用フィルター、固体撮像素子、および、固体撮像素子用フィルターの製造方法 |
JP7404728B2 (ja) * | 2019-09-17 | 2023-12-26 | Toppanホールディングス株式会社 | 赤外光カットフィルター、固体撮像素子用フィルター、固体撮像素子、および、固体撮像素子用フィルターの製造方法 |
TW202113024A (zh) * | 2019-09-17 | 2021-04-01 | 日商凸版印刷股份有限公司 | 紅外光截止濾光片、固態攝影元件用濾光片、固態攝影元件、及固態攝影元件用濾光片之製造方法 |
JP2022100141A (ja) * | 2020-12-23 | 2022-07-05 | 凸版印刷株式会社 | 着色樹脂組成物、光学フィルター、および、光学フィルターの製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005015532A (ja) * | 2003-06-23 | 2005-01-20 | Jsr Corp | 重合体および反射防止膜形成組成物 |
US20090208865A1 (en) * | 2008-02-19 | 2009-08-20 | International Business Machines Corporation | Photolithography focus improvement by reduction of autofocus radiation transmission into substrate |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4822718A (en) * | 1982-09-30 | 1989-04-18 | Brewer Science, Inc. | Light absorbing coating |
JPH0612452B2 (ja) * | 1982-09-30 | 1994-02-16 | ブリュ−ワ−・サイエンス・インコ−ポレイテッド | 集積回路素子の製造方法 |
GB8720417D0 (en) * | 1987-08-28 | 1987-10-07 | Minnesota Mining & Mfg | Recording medium for optical data storage |
JPH07146551A (ja) * | 1991-10-31 | 1995-06-06 | Sony Corp | フォトレジスト組成物及びフォトレジストの露光方法 |
TWI317365B (en) * | 2002-07-31 | 2009-11-21 | Jsr Corp | Acenaphthylene derivative, polymer, and antireflection film-forming composition |
JP4433933B2 (ja) * | 2004-08-13 | 2010-03-17 | Jsr株式会社 | 感放射線性組成物およびハードマスク形成材料 |
JP4086871B2 (ja) * | 2004-11-18 | 2008-05-14 | 日立マクセル株式会社 | 近赤外線遮蔽体及びディスプレイ用前面板 |
KR100938065B1 (ko) * | 2005-03-11 | 2010-01-21 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 포토레지스트 하층막 형성 재료 및 패턴 형성 방법 |
JP4575220B2 (ja) * | 2005-04-14 | 2010-11-04 | 信越化学工業株式会社 | レジスト下層膜材料およびパターン形成方法 |
JP4666166B2 (ja) * | 2005-11-28 | 2011-04-06 | 信越化学工業株式会社 | レジスト下層膜材料及びパターン形成方法 |
JP4809376B2 (ja) * | 2007-03-09 | 2011-11-09 | 信越化学工業株式会社 | 反射防止膜材料およびこれを用いたパターン形成方法 |
JP2009092784A (ja) * | 2007-10-04 | 2009-04-30 | Fujifilm Corp | 近赤外吸収チアゾール化合物およびそれを用いた近赤外吸収フィルター |
JP5417994B2 (ja) * | 2008-07-17 | 2014-02-19 | Jsr株式会社 | 着色層形成用感放射線性組成物、カラーフィルタおよびカラー液晶表示素子 |
US8304170B2 (en) * | 2008-09-04 | 2012-11-06 | Eastman Kodak Company | Negative-working imageable element and method of use |
-
2011
- 2011-03-04 JP JP2011047254A patent/JP5768410B2/ja active Active
- 2011-04-21 US US13/091,290 patent/US20110262863A1/en not_active Abandoned
- 2011-04-22 KR KR1020110037715A patent/KR101809073B1/ko active IP Right Grant
- 2011-04-22 TW TW100114051A patent/TWI477529B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005015532A (ja) * | 2003-06-23 | 2005-01-20 | Jsr Corp | 重合体および反射防止膜形成組成物 |
US20090208865A1 (en) * | 2008-02-19 | 2009-08-20 | International Business Machines Corporation | Photolithography focus improvement by reduction of autofocus radiation transmission into substrate |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11569284B2 (en) | 2019-09-03 | 2023-01-31 | Samsung Electronics Co., Ltd. | Combination structures and optical filters and image sensors and camera modules and electronic devices |
US11561331B2 (en) | 2019-09-10 | 2023-01-24 | Samsung Electronics Co., Ltd. | Combination structures and optical filters and image sensors and camera modules and electronic devices |
Also Published As
Publication number | Publication date |
---|---|
KR20110118102A (ko) | 2011-10-28 |
TW201211098A (en) | 2012-03-16 |
JP2011242751A (ja) | 2011-12-01 |
TWI477529B (zh) | 2015-03-21 |
JP5768410B2 (ja) | 2015-08-26 |
US20110262863A1 (en) | 2011-10-27 |
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E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant |