KR101801987B1 - 기판 처리 방법 및 유체 노즐의 이동 속도 제어 방법 - Google Patents

기판 처리 방법 및 유체 노즐의 이동 속도 제어 방법 Download PDF

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Publication number
KR101801987B1
KR101801987B1 KR1020120063829A KR20120063829A KR101801987B1 KR 101801987 B1 KR101801987 B1 KR 101801987B1 KR 1020120063829 A KR1020120063829 A KR 1020120063829A KR 20120063829 A KR20120063829 A KR 20120063829A KR 101801987 B1 KR101801987 B1 KR 101801987B1
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South Korea
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substrate
fluid nozzle
moving
center
distance
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Korean (ko)
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KR20120139573A (ko
Inventor
신밍 왕
미쯔루 미야자끼
구니마사 마쯔시따
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가부시키가이샤 에바라 세이사꾸쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B08B3/024—Cleaning by means of spray elements moving over the surface to be cleaned

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  • Cleaning Or Drying Semiconductors (AREA)
KR1020120063829A 2011-06-16 2012-06-14 기판 처리 방법 및 유체 노즐의 이동 속도 제어 방법 Active KR101801987B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-133842 2011-06-16
JP2011133842A JP5712061B2 (ja) 2011-06-16 2011-06-16 基板処理方法及び基板処理ユニット

Publications (2)

Publication Number Publication Date
KR20120139573A KR20120139573A (ko) 2012-12-27
KR101801987B1 true KR101801987B1 (ko) 2017-12-28

Family

ID=47328455

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120063829A Active KR101801987B1 (ko) 2011-06-16 2012-06-14 기판 처리 방법 및 유체 노즐의 이동 속도 제어 방법

Country Status (5)

Country Link
US (1) US9165799B2 (https=)
JP (1) JP5712061B2 (https=)
KR (1) KR101801987B1 (https=)
CN (1) CN102825020B (https=)
TW (1) TWI596686B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12198944B2 (en) 2020-11-11 2025-01-14 Applied Materials, Inc. Substrate handling in a modular polishing system with single substrate cleaning chambers
US12525468B2 (en) 2022-12-30 2026-01-13 Applied Materials, Inc. Integrated clean and dry module for cleaning a substrate

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130321749A1 (en) * 2012-06-01 2013-12-05 Shenzhen China Star Optoelectronics Technology Co., Ltd. Liquid Crystal Display Device
JP6183705B2 (ja) * 2013-01-15 2017-08-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6797526B2 (ja) * 2014-11-11 2020-12-09 株式会社荏原製作所 基板洗浄装置
WO2016076303A1 (ja) * 2014-11-11 2016-05-19 株式会社荏原製作所 基板洗浄装置
JP6335103B2 (ja) * 2014-11-14 2018-05-30 株式会社荏原製作所 基板保持装置
JP6401021B2 (ja) * 2014-11-18 2018-10-03 株式会社荏原製作所 基板洗浄装置、基板処理装置、および基板洗浄方法
CN104607420B (zh) * 2015-01-15 2016-08-17 山东大学 小尺寸kdp晶体表面磁-射流清洗装置及清洗工艺
JP2017204495A (ja) * 2016-05-09 2017-11-16 株式会社荏原製作所 基板洗浄装置
KR102338647B1 (ko) 2016-05-09 2021-12-13 가부시키가이샤 에바라 세이사꾸쇼 기판 세정 장치
CN106548971A (zh) * 2016-10-11 2017-03-29 武汉新芯集成电路制造有限公司 一种湿法单片清洗机台的卡盘
US11342202B2 (en) 2018-08-17 2022-05-24 Taiwan Semiconductor Manufacturing Co., Ltd. Automated wafer cleaning
CN111326440B (zh) * 2018-12-17 2022-09-16 辛耘企业股份有限公司 基板处理装置
CN110112084A (zh) * 2019-05-22 2019-08-09 长江存储科技有限责任公司 半导体器件清洗装置
CN110571175A (zh) * 2019-09-17 2019-12-13 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） 摆臂控制方法、装置、系统及晶片加工设备
JP7437499B2 (ja) * 2019-11-01 2024-02-22 エーシーエム リサーチ （シャンハイ） インコーポレーテッド 基板の洗浄方法及び洗浄装置
US11728185B2 (en) 2021-01-05 2023-08-15 Applied Materials, Inc. Steam-assisted single substrate cleaning process and apparatus
CN114713545B (zh) * 2022-03-16 2023-04-28 南京芯视元电子有限公司 一种硅基液晶清洗装置及清洗方法
JP7849214B2 (ja) * 2022-04-25 2026-04-21 株式会社ディスコ ウェーハの加工装置と洗浄装置及び洗浄方法
CN120861491B (zh) * 2025-09-28 2025-11-25 南通优睿半导体有限公司 一种芯片贴装基板的清洗夹具及其使用方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6260562B1 (en) 1997-10-20 2001-07-17 Dainippon Screen Mfg. Co., Ltd. Substrate cleaning apparatus and method
JP2002280348A (ja) 2001-03-16 2002-09-27 Dainippon Screen Mfg Co Ltd 基板洗浄方法および基板洗浄装置
JP2009059876A (ja) 2007-08-31 2009-03-19 Panasonic Corp 基板処理方法
US20100154826A1 (en) 2008-12-19 2010-06-24 Tokyo Electron Limited System and Method For Rinse Optimization

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56125842A (en) * 1980-03-06 1981-10-02 Nec Corp Injection-type cleaning device
JPS62173718A (ja) * 1986-01-28 1987-07-30 Toshiba Corp 半導体ウエハの洗浄方法
JPH09148295A (ja) * 1995-11-27 1997-06-06 Dainippon Screen Mfg Co Ltd 回転式基板処理装置
JPH1147700A (ja) * 1997-07-30 1999-02-23 Matsushita Electric Ind Co Ltd 基板の洗浄方法
JPH11307492A (ja) 1998-04-20 1999-11-05 Tokyo Electron Ltd 基板洗浄装置
JP2005093694A (ja) 2003-09-17 2005-04-07 Dainippon Screen Mfg Co Ltd 基板処理方法およびその装置
KR101277614B1 (ko) 2006-03-22 2013-06-21 가부시키가이샤 에바라 세이사꾸쇼 기판처리장치 및 기판처리방법
JP2007311439A (ja) * 2006-05-17 2007-11-29 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP5744382B2 (ja) 2008-07-24 2015-07-08 株式会社荏原製作所 基板処理装置および基板処理方法
JP5294944B2 (ja) 2009-03-31 2013-09-18 株式会社荏原製作所 基板の洗浄方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6260562B1 (en) 1997-10-20 2001-07-17 Dainippon Screen Mfg. Co., Ltd. Substrate cleaning apparatus and method
JP2002280348A (ja) 2001-03-16 2002-09-27 Dainippon Screen Mfg Co Ltd 基板洗浄方法および基板洗浄装置
JP2009059876A (ja) 2007-08-31 2009-03-19 Panasonic Corp 基板処理方法
US20100154826A1 (en) 2008-12-19 2010-06-24 Tokyo Electron Limited System and Method For Rinse Optimization

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12198944B2 (en) 2020-11-11 2025-01-14 Applied Materials, Inc. Substrate handling in a modular polishing system with single substrate cleaning chambers
US12525468B2 (en) 2022-12-30 2026-01-13 Applied Materials, Inc. Integrated clean and dry module for cleaning a substrate

Also Published As

Publication number Publication date
TWI596686B (zh) 2017-08-21
JP2013004705A (ja) 2013-01-07
KR20120139573A (ko) 2012-12-27
JP5712061B2 (ja) 2015-05-07
CN102825020B (zh) 2017-03-01
TW201308479A (zh) 2013-02-16
US9165799B2 (en) 2015-10-20
CN102825020A (zh) 2012-12-19
US20120318304A1 (en) 2012-12-20

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