KR101798235B1 - 하드마스크 물질 - Google Patents

하드마스크 물질 Download PDF

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Publication number
KR101798235B1
KR101798235B1 KR1020100123145A KR20100123145A KR101798235B1 KR 101798235 B1 KR101798235 B1 KR 101798235B1 KR 1020100123145 A KR1020100123145 A KR 1020100123145A KR 20100123145 A KR20100123145 A KR 20100123145A KR 101798235 B1 KR101798235 B1 KR 101798235B1
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KR
South Korea
Prior art keywords
film
layer
hard mask
plasma
silicon carbide
Prior art date
Application number
KR1020100123145A
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English (en)
Korean (ko)
Other versions
KR20110063386A (ko
Inventor
비쉬와나탄 랑가라잔
조지 앤드류 안토넬리
아난다 배너지
바트 반 슈라벤디지크
Original Assignee
노벨러스 시스템즈, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/631,691 external-priority patent/US8247332B2/en
Priority claimed from US12/631,709 external-priority patent/US8178443B2/en
Application filed by 노벨러스 시스템즈, 인코포레이티드 filed Critical 노벨러스 시스템즈, 인코포레이티드
Publication of KR20110063386A publication Critical patent/KR20110063386A/ko
Application granted granted Critical
Publication of KR101798235B1 publication Critical patent/KR101798235B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76811—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving multiple stacked pre-patterned masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76813—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving a partial via etch

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020100123145A 2009-12-04 2010-12-06 하드마스크 물질 KR101798235B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/631,691 2009-12-04
US12/631,691 US8247332B2 (en) 2009-12-04 2009-12-04 Hardmask materials
US12/631,709 2009-12-04
US12/631,709 US8178443B2 (en) 2009-12-04 2009-12-04 Hardmask materials

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020170147917A Division KR101907802B1 (ko) 2009-12-04 2017-11-08 하드마스크 물질

Publications (2)

Publication Number Publication Date
KR20110063386A KR20110063386A (ko) 2011-06-10
KR101798235B1 true KR101798235B1 (ko) 2017-11-15

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Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020100123145A KR101798235B1 (ko) 2009-12-04 2010-12-06 하드마스크 물질
KR1020170147917A KR101907802B1 (ko) 2009-12-04 2017-11-08 하드마스크 물질

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020170147917A KR101907802B1 (ko) 2009-12-04 2017-11-08 하드마스크 물질

Country Status (4)

Country Link
JP (1) JP5656010B2 (zh)
KR (2) KR101798235B1 (zh)
CN (2) CN105185707B (zh)
TW (2) TWI547997B (zh)

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JP6111097B2 (ja) * 2013-03-12 2017-04-05 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6111106B2 (ja) * 2013-03-19 2017-04-05 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
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KR102130459B1 (ko) * 2016-02-29 2020-07-07 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
US9870915B1 (en) * 2016-10-01 2018-01-16 Applied Materials, Inc. Chemical modification of hardmask films for enhanced etching and selective removal
CN108220922B (zh) 2016-12-15 2020-12-29 东京毅力科创株式会社 成膜方法、硼膜以及成膜装置
US9837270B1 (en) * 2016-12-16 2017-12-05 Lam Research Corporation Densification of silicon carbide film using remote plasma treatment
JP6914143B2 (ja) * 2016-12-26 2021-08-04 東京エレクトロン株式会社 基板処理方法、基板処理装置、基板処理システム、基板処理システムの制御装置および半導体基板の製造方法
KR102020211B1 (ko) * 2017-01-09 2019-11-04 주식회사 테스 탄소 및/또는 보론를 포함하는 비정질 실리콘막의 형성 방법
CN110249410B (zh) * 2017-02-01 2023-07-04 应用材料公司 用于硬掩模应用的硼掺杂碳化钨
JP6914107B2 (ja) * 2017-06-05 2021-08-04 東京エレクトロン株式会社 ボロン膜の除去方法
CN107742607B (zh) * 2017-08-31 2021-05-11 重庆中科渝芯电子有限公司 一种用icp干法刻蚀制作薄膜电阻的方法
US10474027B2 (en) * 2017-11-13 2019-11-12 Macronix International Co., Ltd. Method for forming an aligned mask
JP7049883B2 (ja) * 2018-03-28 2022-04-07 東京エレクトロン株式会社 ボロン系膜の成膜方法および成膜装置
GB201813467D0 (en) * 2018-08-17 2018-10-03 Spts Technologies Ltd Method of depositing silicon nitride
KR20220056249A (ko) 2018-10-19 2022-05-04 램 리써치 코포레이션 갭 충진 (gapfill) 을 위한 도핑되거나 도핑되지 않은 실리콘 카바이드 증착 및 원격 수소 플라즈마 노출
US11393678B2 (en) * 2019-08-12 2022-07-19 Applied Materials, Inc. Low-k dielectric films
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Also Published As

Publication number Publication date
CN105185707B (zh) 2018-06-01
CN102097364B (zh) 2015-10-14
JP2011139033A (ja) 2011-07-14
TWI547997B (zh) 2016-09-01
CN102097364A (zh) 2011-06-15
KR101907802B1 (ko) 2018-12-05
CN105185707A (zh) 2015-12-23
KR20170126827A (ko) 2017-11-20
TW201543574A (zh) 2015-11-16
KR20110063386A (ko) 2011-06-10
TWI505364B (zh) 2015-10-21
JP5656010B2 (ja) 2015-01-21
TW201130050A (en) 2011-09-01

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