KR101721957B1 - 포토레지스트 조성물 및 전자기기를 형성하는 연관 방법 - Google Patents

포토레지스트 조성물 및 전자기기를 형성하는 연관 방법 Download PDF

Info

Publication number
KR101721957B1
KR101721957B1 KR1020150140468A KR20150140468A KR101721957B1 KR 101721957 B1 KR101721957 B1 KR 101721957B1 KR 1020150140468 A KR1020150140468 A KR 1020150140468A KR 20150140468 A KR20150140468 A KR 20150140468A KR 101721957 B1 KR101721957 B1 KR 101721957B1
Authority
KR
South Korea
Prior art keywords
polymer
independently
photoresist composition
methacryloyloxy
difluoro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020150140468A
Other languages
English (en)
Korean (ko)
Other versions
KR20160042772A (ko
Inventor
제이. 라비움 폴
자인 비풀
엠. 콜리 수잔
더블유. 새커리 제임스
에프. 카메론 제임스
엠. 곽 에이미
에이. 발레리 데이비드
Original Assignee
롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 filed Critical 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
Publication of KR20160042772A publication Critical patent/KR20160042772A/ko
Application granted granted Critical
Publication of KR101721957B1 publication Critical patent/KR101721957B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/07—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton
    • C07C309/12—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • C08F220/24—Esters containing halogen containing perhaloalkyl radicals
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1809—C9-(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/38—Esters containing sulfur
    • C08F220/382—Esters containing sulfur and containing oxygen, e.g. 2-sulfoethyl (meth)acrylate

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020150140468A 2014-10-10 2015-10-06 포토레지스트 조성물 및 전자기기를 형성하는 연관 방법 Active KR101721957B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462062350P 2014-10-10 2014-10-10
US62/062,350 2014-10-10

Publications (2)

Publication Number Publication Date
KR20160042772A KR20160042772A (ko) 2016-04-20
KR101721957B1 true KR101721957B1 (ko) 2017-04-03

Family

ID=55655373

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150140468A Active KR101721957B1 (ko) 2014-10-10 2015-10-06 포토레지스트 조성물 및 전자기기를 형성하는 연관 방법

Country Status (5)

Country Link
US (1) US9557642B2 (enExample)
JP (1) JP6286404B2 (enExample)
KR (1) KR101721957B1 (enExample)
CN (1) CN105511225B (enExample)
TW (1) TWI615675B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9606434B2 (en) * 2014-10-10 2017-03-28 Rohm And Haas Electronic Materials, Llc Polymer comprising repeat units with photoacid-generating functionality and base-solubility-enhancing functionality, and associated photoresist composition and electronic device forming method
US9527936B2 (en) 2014-10-10 2016-12-27 Rohm And Haas Electronic Materials Llc Polymer comprising repeat units with photoacid-generating functionality and base-solubility-enhancing functionality, and associated photoresist composition and electronic device forming method
US9557642B2 (en) 2014-10-10 2017-01-31 Rohm And Haas Electronic Materials Llc Photoresist composition and associated method of forming an electronic device
US9551930B2 (en) 2014-10-10 2017-01-24 Rohm And Haas Electronic Materials Llc Photoresist composition and associated method of forming an electronic device
US11281099B2 (en) 2018-05-28 2022-03-22 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound
JP7389622B2 (ja) * 2018-11-20 2023-11-30 住友化学株式会社 塩、クエンチャー、レジスト組成物及びレジストパターンの製造方法
JP7318129B2 (ja) * 2020-06-10 2023-07-31 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
JP7758480B2 (ja) * 2020-07-01 2025-10-22 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2023145385A (ja) * 2022-03-28 2023-10-11 信越化学工業株式会社 レジスト組成物及びパターン形成方法
WO2025069927A1 (ja) * 2023-09-29 2025-04-03 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法及び電子デバイスの製造方法
WO2025234401A1 (ja) * 2024-05-08 2025-11-13 Jsr株式会社 感放射線性組成物及びレジストパターン形成方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3902115A1 (de) 1989-01-25 1990-08-02 Basf Ag Strahlungsempfindliche polymere
JP3613491B2 (ja) 1996-06-04 2005-01-26 富士写真フイルム株式会社 感光性組成物
US7361447B2 (en) * 2003-07-30 2008-04-22 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
KR100637450B1 (ko) * 2005-02-16 2006-10-23 한양대학교 산학협력단 플루오로알킬술폰늄염의 광산발생기가 치환된 화합물과 이를 중합한 공중합체
JP4845650B2 (ja) * 2006-09-08 2011-12-28 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7569326B2 (en) * 2006-10-27 2009-08-04 Shin-Etsu Chemical Co., Ltd. Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process
EP2101217B1 (en) * 2008-03-14 2011-05-11 Shin-Etsu Chemical Co., Ltd. Sulfonium salt-containing polymer, resist compositon, and patterning process
JP4998746B2 (ja) * 2008-04-24 2012-08-15 信越化学工業株式会社 スルホニウム塩を含む高分子化合物、レジスト材料及びパターン形成方法
JP5201363B2 (ja) * 2008-08-28 2013-06-05 信越化学工業株式会社 重合性アニオンを有するスルホニウム塩及び高分子化合物、レジスト材料及びパターン形成方法
TWI400226B (zh) 2008-10-17 2013-07-01 Shinetsu Chemical Co 具有聚合性陰離子之鹽及高分子化合物、光阻劑材料及圖案形成方法
JP5401910B2 (ja) 2008-10-17 2014-01-29 セントラル硝子株式会社 重合性アニオンを有する含フッ素スルホン塩類とその製造方法、含フッ素樹脂、レジスト組成物及びそれを用いたパターン形成方法
JP5851688B2 (ja) 2009-12-31 2016-02-03 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 感光性組成物
JP5782283B2 (ja) 2010-03-31 2015-09-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 新規のポリマーおよびフォトレジスト組成物
US9182664B2 (en) 2010-10-13 2015-11-10 Central Glass Company, Limited Polymerizable fluorine-containing sulfonate, fluorine-containing sulfonate resin, resist composition and pattern-forming method using same
JP5521996B2 (ja) * 2010-11-19 2014-06-18 信越化学工業株式会社 スルホニウム塩を含む高分子化合物、レジスト材料及びパターン形成方法、並びにスルホニウム塩単量体及びその製造方法
JP5802394B2 (ja) 2011-01-17 2015-10-28 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法及び高分子化合物
JP5677135B2 (ja) 2011-02-23 2015-02-25 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法および高分子化合物
JP5715890B2 (ja) 2011-06-10 2015-05-13 東京応化工業株式会社 高分子化合物の製造方法
US20120322006A1 (en) 2011-06-20 2012-12-20 Central Glass Company, Limited Fluorine-Containing Sulfonate Resin, Resist Composition and Pattern Formation Method
JP2013227466A (ja) * 2011-06-20 2013-11-07 Central Glass Co Ltd 含フッ素スルホン酸塩樹脂、含フッ素ｎ−スルホニルオキシイミド樹脂、レジスト組成物及びそれを用いたパターン形成方法
TW201323456A (zh) 2011-07-21 2013-06-16 Tokyo Ohka Kogyo Co Ltd 聚合物，光阻組成物及光阻圖型之形成方法
JP6019849B2 (ja) 2011-09-08 2016-11-02 セントラル硝子株式会社 含フッ素スルホン酸塩類、含フッ素スルホン酸塩樹脂、レジスト組成物及びそれを用いたパターン形成方法
JP6006928B2 (ja) 2011-11-02 2016-10-12 東京応化工業株式会社 高分子化合物の製造方法
JP5783137B2 (ja) * 2012-06-15 2015-09-24 信越化学工業株式会社 スルホニウム塩、高分子化合物、レジスト材料及びパターン形成方法
JP6131776B2 (ja) * 2012-09-05 2017-05-24 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
US8945814B2 (en) * 2012-09-15 2015-02-03 Rohm And Haas Electronic Materials Llc Acid generators and photoresists comprising same
TWI545118B (zh) * 2012-09-15 2016-08-11 羅門哈斯電子材料有限公司 酸產生劑化合物及包含該化合物之光阻劑
JP5913241B2 (ja) * 2012-09-15 2016-04-27 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 複数の酸発生剤化合物を含むフォトレジスト
JP5803872B2 (ja) * 2012-10-17 2015-11-04 信越化学工業株式会社 ポジ型レジスト材料及びこれを用いたパターン形成方法
JP6106432B2 (ja) 2012-12-28 2017-03-29 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、高分子化合物
US10248020B2 (en) * 2012-12-28 2019-04-02 Rohm And Haas Electronic Materials Llc Acid generators and photoresists comprising same
JP6571912B2 (ja) 2012-12-31 2019-09-04 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 樹状化合物、フォトレジスト組成物、および電子デバイスを作製する方法
JP6243608B2 (ja) * 2013-02-05 2017-12-06 東京応化工業株式会社 化合物、高分子化合物、レジスト組成物、レジストパターン形成方法
US9581901B2 (en) * 2013-12-19 2017-02-28 Rohm And Haas Electronic Materials Llc Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device
US10345700B2 (en) 2014-09-08 2019-07-09 International Business Machines Corporation Negative-tone resist compositions and multifunctional polymers therein
US9606434B2 (en) 2014-10-10 2017-03-28 Rohm And Haas Electronic Materials, Llc Polymer comprising repeat units with photoacid-generating functionality and base-solubility-enhancing functionality, and associated photoresist composition and electronic device forming method
US9557642B2 (en) 2014-10-10 2017-01-31 Rohm And Haas Electronic Materials Llc Photoresist composition and associated method of forming an electronic device
US9527936B2 (en) 2014-10-10 2016-12-27 Rohm And Haas Electronic Materials Llc Polymer comprising repeat units with photoacid-generating functionality and base-solubility-enhancing functionality, and associated photoresist composition and electronic device forming method
US9551930B2 (en) 2014-10-10 2017-01-24 Rohm And Haas Electronic Materials Llc Photoresist composition and associated method of forming an electronic device

Also Published As

Publication number Publication date
US20160103392A1 (en) 2016-04-14
JP2016081053A (ja) 2016-05-16
JP6286404B2 (ja) 2018-02-28
US9557642B2 (en) 2017-01-31
TW201614371A (en) 2016-04-16
CN105511225B (zh) 2019-11-15
TWI615675B (zh) 2018-02-21
CN105511225A (zh) 2016-04-20
KR20160042772A (ko) 2016-04-20

Similar Documents

Publication Publication Date Title
KR101721957B1 (ko) 포토레지스트 조성물 및 전자기기를 형성하는 연관 방법
KR101874481B1 (ko) 포토레지스트 조성물 및 전자기기를 형성하는 연관 방법
KR101786641B1 (ko) 광산 발생 기능 및 기본 용해도 향상 기능이 있는 반복 단위를 포함하는 폴리머 및 이와 관련된 포토 레지스트 조성물과 전자장치 형성 방법
KR101839179B1 (ko) 술포늄염, 화학 증폭형 레지스트 조성물, 및 패턴 형성 방법
KR101760377B1 (ko) 광산 발생 기능 및 기본 용해도 향상 기능이 있는 반복 단위를 포함하는 폴리머 및 이와 관련된 포토 레지스트 조성물과 전자장치 형성 방법
TWI567052B (zh) 新穎鎓鹽化合物及光阻組成物與圖案形成方法
KR20140001116A (ko) 포토애시드 발생제, 포토애시드 발생제를 포함하는 포토레지스트, 및 이를 포함하는 코팅 물품
KR20140086904A (ko) 산 발생제 및 이를 포함하는 포토레지스트
CN103534648A (zh) 正型抗蚀剂组合物和使用该组合物的抗蚀剂膜、涂有抗蚀剂的掩模坯、抗蚀剂图案形成方法和光掩模
CN102796223A (zh) 聚合物组合物以及包含所述聚合物的光刻胶
KR20230072428A (ko) 화학 증폭 레지스트 조성물 및 패턴 형성 방법
KR101941474B1 (ko) 광산 발생제
CN117069634A (zh) 新颖锍盐型聚合性单体、高分子光酸产生剂、基础树脂、抗蚀剂组成物及图案形成方法
KR101444111B1 (ko) 신규 아크릴계 단량체, 중합체 및 이를 포함하는 레지스트 조성물
KR20120077463A (ko) (메트)아크릴레이트 화합물, 감광성 고분자 및 감광성 수지 조성물

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20151006

A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20151202

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20151006

Comment text: Patent Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20160922

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20170320

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20170327

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20170327

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20200227

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20200227

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20210302

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20220216

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20250217

Start annual number: 9

End annual number: 9