KR101602251B1 - 배선 구조물 및 이의 형성 방법 - Google Patents

배선 구조물 및 이의 형성 방법 Download PDF

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Publication number
KR101602251B1
KR101602251B1 KR1020090098742A KR20090098742A KR101602251B1 KR 101602251 B1 KR101602251 B1 KR 101602251B1 KR 1020090098742 A KR1020090098742 A KR 1020090098742A KR 20090098742 A KR20090098742 A KR 20090098742A KR 101602251 B1 KR101602251 B1 KR 101602251B1
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South Korea
Prior art keywords
insulating film
contact
film
interlayer insulating
forming
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KR1020090098742A
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English (en)
Korean (ko)
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KR20110041760A (ko
Inventor
이은옥
김대용
최길현
김병희
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삼성전자주식회사
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Priority to KR1020090098742A priority Critical patent/KR101602251B1/ko
Priority to US12/836,081 priority patent/US8501606B2/en
Priority to JP2010230439A priority patent/JP2011086941A/ja
Priority to TW099135322A priority patent/TWI529855B/zh
Publication of KR20110041760A publication Critical patent/KR20110041760A/ko
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Publication of KR101602251B1 publication Critical patent/KR101602251B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/485—Bit line contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H10W20/066—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying by forming silicides of refractory metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020090098742A 2009-10-16 2009-10-16 배선 구조물 및 이의 형성 방법 Active KR101602251B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020090098742A KR101602251B1 (ko) 2009-10-16 2009-10-16 배선 구조물 및 이의 형성 방법
US12/836,081 US8501606B2 (en) 2009-10-16 2010-07-14 Methods of forming wiring structures
JP2010230439A JP2011086941A (ja) 2009-10-16 2010-10-13 半導体装置の配線構造物及び配線構造物の製造方法
TW099135322A TWI529855B (zh) 2009-10-16 2010-10-15 佈線結構及形成佈線結構之方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090098742A KR101602251B1 (ko) 2009-10-16 2009-10-16 배선 구조물 및 이의 형성 방법

Publications (2)

Publication Number Publication Date
KR20110041760A KR20110041760A (ko) 2011-04-22
KR101602251B1 true KR101602251B1 (ko) 2016-03-11

Family

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Application Number Title Priority Date Filing Date
KR1020090098742A Active KR101602251B1 (ko) 2009-10-16 2009-10-16 배선 구조물 및 이의 형성 방법

Country Status (4)

Country Link
US (1) US8501606B2 (enExample)
JP (1) JP2011086941A (enExample)
KR (1) KR101602251B1 (enExample)
TW (1) TWI529855B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240324184A1 (en) * 2023-03-20 2024-09-26 Samsung Electronics Co., Ltd. Semiconductor memory devices and methods of fabricating the same

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KR20120073394A (ko) * 2010-12-27 2012-07-05 삼성전자주식회사 반도체 소자 및 이의 제조방법
JP2013074189A (ja) * 2011-09-28 2013-04-22 Elpida Memory Inc 半導体装置及びその製造方法
JP6076038B2 (ja) * 2011-11-11 2017-02-08 株式会社半導体エネルギー研究所 表示装置の作製方法
KR101887144B1 (ko) * 2012-03-15 2018-08-09 삼성전자주식회사 반도체 소자 및 이를 제조하는 방법
KR101979752B1 (ko) * 2012-05-03 2019-05-17 삼성전자주식회사 반도체 소자 및 그 제조 방법
KR101924020B1 (ko) * 2012-10-18 2018-12-03 삼성전자주식회사 반도체 장치 및 이의 제조 방법
JP2015122471A (ja) * 2013-11-20 2015-07-02 マイクロン テクノロジー， インク． 半導体装置およびその製造方法
KR20160018270A (ko) * 2014-08-08 2016-02-17 삼성전자주식회사 자기 메모리 소자
CN110890328B (zh) * 2018-09-11 2022-03-18 长鑫存储技术有限公司 半导体存储器的形成方法
TWI696270B (zh) * 2019-04-15 2020-06-11 力晶積成電子製造股份有限公司 記憶體結構及其製造方法
KR102762967B1 (ko) * 2020-04-21 2025-02-05 삼성전자주식회사 콘택 플러그들을 갖는 반도체 소자들
CN113921472B (zh) * 2020-07-08 2024-07-19 长鑫存储技术有限公司 半导体结构及其制作方法
US20230292497A1 (en) * 2022-03-11 2023-09-14 Nanya Technology Corporation Manufacturing method of semiconductor structure
CN118234220A (zh) * 2022-12-20 2024-06-21 长江存储科技有限责任公司 存储器件及其形成方法

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JP2000150651A (ja) * 1998-11-04 2000-05-30 Nec Corp 半導体装置及びプラグ構造の製造方法

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JPH01300543A (ja) * 1988-05-27 1989-12-05 Fujitsu Ltd 半導体装置の製造方法
JPH07120638B2 (ja) * 1989-07-25 1995-12-20 三菱電機株式会社 半導体装置の製造方法
JPH06318680A (ja) 1993-05-10 1994-11-15 Nec Corp 半導体記憶装置およびその製造方法
US6117723A (en) * 1999-06-10 2000-09-12 Taiwan Semiconductor Manufacturing Company Salicide integration process for embedded DRAM devices
JP4860022B2 (ja) * 2000-01-25 2012-01-25 エルピーダメモリ株式会社 半導体集積回路装置の製造方法
JP2001257325A (ja) 2000-03-08 2001-09-21 Nec Corp 半導体記憶装置及びその製造方法
US6461959B1 (en) * 2001-06-21 2002-10-08 United Microelectronics Corp. Method of fabrication of a contact plug in an embedded memory
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KR100666377B1 (ko) * 2005-08-02 2007-01-09 삼성전자주식회사 패드 구조물, 이의 형성 방법, 이를 포함하는 반도체 장치및 그 제조 방법
KR100724575B1 (ko) * 2006-06-28 2007-06-04 삼성전자주식회사 매립 게이트전극을 갖는 반도체소자 및 그 형성방법
KR100732773B1 (ko) * 2006-06-29 2007-06-27 주식회사 하이닉스반도체 절연층들간의 들뜸을 방지한 반도체 소자 제조 방법
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KR20090035146A (ko) * 2007-10-05 2009-04-09 주식회사 하이닉스반도체 메모리 소자의 제조방법

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JP2000150651A (ja) * 1998-11-04 2000-05-30 Nec Corp 半導体装置及びプラグ構造の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240324184A1 (en) * 2023-03-20 2024-09-26 Samsung Electronics Co., Ltd. Semiconductor memory devices and methods of fabricating the same

Also Published As

Publication number Publication date
US20110092060A1 (en) 2011-04-21
JP2011086941A (ja) 2011-04-28
US8501606B2 (en) 2013-08-06
TWI529855B (zh) 2016-04-11
KR20110041760A (ko) 2011-04-22
TW201123356A (en) 2011-07-01

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