KR101596386B1 - 전기 절연 층을 갖는 마이크로 led 구조체 및 마이크로 led 구조체들의 어레이를 형성하는 방법 - Google Patents

전기 절연 층을 갖는 마이크로 led 구조체 및 마이크로 led 구조체들의 어레이를 형성하는 방법 Download PDF

Info

Publication number
KR101596386B1
KR101596386B1 KR1020147016725A KR20147016725A KR101596386B1 KR 101596386 B1 KR101596386 B1 KR 101596386B1 KR 1020147016725 A KR1020147016725 A KR 1020147016725A KR 20147016725 A KR20147016725 A KR 20147016725A KR 101596386 B1 KR101596386 B1 KR 101596386B1
Authority
KR
South Korea
Prior art keywords
layer
bonding layer
bonding
micro
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020147016725A
Other languages
English (en)
Korean (ko)
Other versions
KR20140112486A (ko
Inventor
신-후아 후
안드레아스 비블
존 에이. 히긴슨
훙-파이 스티븐 로우
Original Assignee
애플 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/372,422 external-priority patent/US8349116B1/en
Priority claimed from US13/436,314 external-priority patent/US8518204B2/en
Priority claimed from US13/436,260 external-priority patent/US8573469B2/en
Application filed by 애플 인크. filed Critical 애플 인크.
Publication of KR20140112486A publication Critical patent/KR20140112486A/ko
Application granted granted Critical
Publication of KR101596386B1 publication Critical patent/KR101596386B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
KR1020147016725A 2011-11-18 2012-11-08 전기 절연 층을 갖는 마이크로 led 구조체 및 마이크로 led 구조체들의 어레이를 형성하는 방법 Active KR101596386B1 (ko)

Applications Claiming Priority (15)

Application Number Priority Date Filing Date Title
US201161561706P 2011-11-18 2011-11-18
US61/561,706 2011-11-18
US201261594919P 2012-02-03 2012-02-03
US61/594,919 2012-02-03
US201261597109P 2012-02-09 2012-02-09
US61/597,109 2012-02-09
US201261597658P 2012-02-10 2012-02-10
US61/597,658 2012-02-10
US13/372,422 US8349116B1 (en) 2011-11-18 2012-02-13 Micro device transfer head heater assembly and method of transferring a micro device
US13/372,422 2012-02-13
US13/436,314 2012-03-30
US13/436,314 US8518204B2 (en) 2011-11-18 2012-03-30 Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer
US13/436,260 US8573469B2 (en) 2011-11-18 2012-03-30 Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer
US13/436,260 2012-03-30
PCT/US2012/064215 WO2013074370A1 (en) 2011-11-18 2012-11-08 Method of forming a micro led structure and array of micro led structures with an electrically insulating layer

Publications (2)

Publication Number Publication Date
KR20140112486A KR20140112486A (ko) 2014-09-23
KR101596386B1 true KR101596386B1 (ko) 2016-02-22

Family

ID=48430052

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147016725A Active KR101596386B1 (ko) 2011-11-18 2012-11-08 전기 절연 층을 갖는 마이크로 led 구조체 및 마이크로 led 구조체들의 어레이를 형성하는 방법

Country Status (9)

Country Link
EP (1) EP2780954B1 (https=)
JP (1) JP6100275B2 (https=)
KR (1) KR101596386B1 (https=)
AU (1) AU2012339938B2 (https=)
BR (1) BR112014011807A2 (https=)
IN (1) IN2014CN03711A (https=)
MX (1) MX336453B (https=)
TW (2) TWI559572B (https=)
WO (2) WO2013074372A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11069726B2 (en) 2018-02-06 2021-07-20 Samsung Display Co., Ltd. Method of manufacturing display device
CN115020550A (zh) * 2021-03-03 2022-09-06 苹果公司 具有器件层竖直位置的精确控制的用于管芯到晶片器件层转移的方法
US12593723B2 (en) 2019-10-08 2026-03-31 Samsung Display Co., Ltd. Pixel, display device including same, and manufacturing method therefor

Families Citing this family (95)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2952036T3 (es) 2013-06-12 2023-10-26 Rohinni Inc Teclado de retroiluminación con fuentes generadoras de luz depositadas
US9583533B2 (en) 2014-03-13 2017-02-28 Apple Inc. LED device with embedded nanowire LEDs
US9105813B1 (en) * 2014-05-30 2015-08-11 Mikro Mesa Technology Co., Ltd. Micro-light-emitting diode
CN113035851B (zh) * 2014-06-18 2022-03-29 艾克斯展示公司技术有限公司 微组装led显示器
US9773711B2 (en) 2014-12-01 2017-09-26 Industrial Technology Research Institute Picking-up and placing process for electronic devices and electronic module
US9607907B2 (en) 2014-12-01 2017-03-28 Industrial Technology Research Institute Electric-programmable magnetic module and picking-up and placement process for electronic devices
US10177123B2 (en) 2014-12-19 2019-01-08 Glo Ab Light emitting diode array on a backplane and method of making thereof
KR102402999B1 (ko) 2015-08-31 2022-05-30 삼성디스플레이 주식회사 디스플레이 장치 및 이의 제조 방법
GB2544335A (en) * 2015-11-13 2017-05-17 Oculus Vr Llc A method and apparatus for use in the manufacture of a display element
KR102298484B1 (ko) 2016-01-15 2021-09-03 로히니, 엘엘씨. 장치 상의 커버를 통해 후면 발광하는 장치 및 방법
US10032827B2 (en) * 2016-06-29 2018-07-24 Applied Materials, Inc. Systems and methods for transfer of micro-devices
DE102016112584B4 (de) 2016-07-08 2024-10-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip, Verfahren zur Herstellung eines Halbleiterchips und Vorrichtung mit einer Mehrzahl von Halbleiterchips
CN109690757B (zh) 2016-10-04 2023-02-28 维耶尔公司 施体衬底中的微装置布置
US10854779B2 (en) 2016-11-07 2020-12-01 Goertek. Inc Micro-LED transfer method and manufacturing method
JP6850112B2 (ja) * 2016-11-28 2021-03-31 株式会社ディスコ Ｌｅｄ組み立て方法
JP6918537B2 (ja) * 2017-03-24 2021-08-11 東レエンジニアリング株式会社 ピックアップ方法、ピックアップ装置、及び実装装置
TWI633646B (zh) 2017-04-06 2018-08-21 優顯科技股份有限公司 用於批量移轉微半導體結構之方法
CN106990519B (zh) * 2017-05-12 2024-09-24 中国科学院苏州生物医学工程技术研究所 结构光照明显微成像系统
TWI661533B (zh) * 2017-06-07 2019-06-01 Asti Global Inc., Taiwan 晶片安裝系統以及晶片安裝方法
TWI636587B (zh) * 2017-07-28 2018-09-21 泰谷光電科技股份有限公司 Light-emitting diode structure for avoiding light leakage on side and back sides and manufacturing method thereof
TWI653694B (zh) 2017-09-13 2019-03-11 英屬開曼群島商錼創科技股份有限公司 微型發光元件陣列製造方法、轉移載板以及微型發光元件陣列
TWI647810B (zh) * 2017-10-13 2019-01-11 行家光電股份有限公司 微元件之巨量排列方法及系統
EP3471134A1 (en) 2017-10-13 2019-04-17 Maven Optronics Co., Ltd. Method and system for mass arrangement of micro-component devices
CN107887331B (zh) * 2017-11-11 2020-04-10 福州大学 一种Micro-LED发光显示器件的制备方法
TWI706554B (zh) 2017-12-13 2020-10-01 友達光電股份有限公司 畫素陣列基板及其製造方法
KR102428029B1 (ko) 2017-12-20 2022-08-02 (주)포인트엔지니어링 마이크로 led 전사헤드
US20190206307A1 (en) * 2017-12-28 2019-07-04 X Development Llc Display with switchable background appearance
JP7016403B2 (ja) 2018-03-13 2022-02-04 富士フイルム株式会社 硬化膜の製造方法、固体撮像素子の製造方法
KR20190114330A (ko) 2018-03-29 2019-10-10 (주)포인트엔지니어링 마이크로 led 전사헤드
KR20190114372A (ko) 2018-03-30 2019-10-10 (주)포인트엔지니어링 마이크로 led 전사 시스템
KR102424246B1 (ko) 2018-03-30 2022-07-25 (주)포인트엔지니어링 전사헤드를 구비한 마이크로 led 전사 시스템
KR102481434B1 (ko) 2018-03-30 2022-12-26 (주)포인트엔지니어링 전사헤드 및 이를 이용한 마이크로 led 흡착방법
KR102498037B1 (ko) 2018-04-20 2023-02-10 (주)포인트엔지니어링 마이크로 led 흡착체
CN110349899A (zh) 2018-04-06 2019-10-18 普因特工程有限公司 微发光二极管吸附体
KR102471585B1 (ko) 2018-04-06 2022-11-28 (주)포인트엔지니어링 마이크로 led 흡착체 및 이를 이용한 마이크로 led 검사시스템
KR20190117180A (ko) 2018-04-06 2019-10-16 (주)포인트엔지니어링 마이크로 led 흡착체 및 이를 이용한 마이크로 led 검사시스템
TWI672466B (zh) * 2018-04-11 2019-09-21 Asti Global Inc., Taiwan 微型發光二極體顯示器及其製作方法
KR102471583B1 (ko) 2018-04-16 2022-11-28 (주)포인트엔지니어링 마이크로 led 흡착체를 포함하는 마이크로 led 전사 시스템
KR20190120598A (ko) 2018-04-16 2019-10-24 (주)포인트엔지니어링 마이크로 led 흡착체를 포함하는 마이크로 led 전사 시스템
KR102498109B1 (ko) 2018-04-20 2023-02-09 (주)포인트엔지니어링 마이크로 led 전사 시스템
KR20190124920A (ko) 2018-04-27 2019-11-06 (주)포인트엔지니어링 소자 전사 헤드
KR102498112B1 (ko) 2018-04-27 2023-02-09 (주)포인트엔지니어링 마이크로 led 전사 헤드
TWI658612B (zh) * 2018-05-02 2019-05-01 態金材料科技股份有限公司 Light-emitting diode structure capable of gaining light output performance
KR102457191B1 (ko) 2018-05-16 2022-10-20 (주)포인트엔지니어링 마이크로 led 전사 시스템
KR102527138B1 (ko) 2018-05-16 2023-04-28 (주)포인트엔지니어링 마이크로 led 전사 시스템
KR20190131311A (ko) 2018-05-16 2019-11-26 (주)포인트엔지니어링 마이크로 led 흡착체
KR102517784B1 (ko) 2018-05-16 2023-04-04 (주)포인트엔지니어링 마이크로 led 흡착체
CN110544661A (zh) 2018-05-29 2019-12-06 普因特工程有限公司 微led转印头及利用其的微led转印系统
KR102457193B1 (ko) 2018-05-29 2022-10-20 (주)포인트엔지니어링 마이크로 led 흡착체
KR102540859B1 (ko) 2018-05-29 2023-06-07 (주)포인트엔지니어링 마이크로 led 전사헤드 및 이를 이용한 마이크로 led 전사 시스템
KR102540860B1 (ko) 2018-05-29 2023-06-07 (주)포인트엔지니어링 마이크로 led 전사헤드 및 이를 이용한 마이크로 led 전사 시스템
KR20190135862A (ko) 2018-05-29 2019-12-09 (주)포인트엔지니어링 마이크로 led 전사 시스템
KR20190136562A (ko) 2018-05-31 2019-12-10 (주)포인트엔지니어링 마이크로 led 전사헤드
KR102527139B1 (ko) 2018-06-15 2023-04-28 (주)포인트엔지니어링 마이크로 led 전사헤드 및 마이크로 led 전사 스테이지
CN110648956A (zh) 2018-06-27 2020-01-03 普因特工程有限公司 微发光二极管转印头
KR102541195B1 (ko) 2018-06-27 2023-06-09 (주)포인트엔지니어링 마이크로 led 전사헤드
KR102643764B1 (ko) 2018-06-27 2024-03-06 (주)포인트엔지니어링 마이크로 led 전사헤드
KR20200005234A (ko) 2018-07-06 2020-01-15 (주)포인트엔지니어링 마이크로 led 전사헤드
KR20200005235A (ko) 2018-07-06 2020-01-15 (주)포인트엔지니어링 마이크로 led 전사헤드
KR20200005237A (ko) 2018-07-06 2020-01-15 (주)포인트엔지니어링 마이크로 led 전사 헤드 및 이를 이용한 마이크로 led 전사 시스템
KR20200015082A (ko) 2018-08-02 2020-02-12 (주)포인트엔지니어링 마이크로 led 구조체 및 이의 제조방법
KR20200015073A (ko) 2018-08-02 2020-02-12 (주)포인트엔지니어링 마이크로 led 전사 시스템
KR20200015081A (ko) 2018-08-02 2020-02-12 (주)포인트엔지니어링 마이크로 led 전사헤드
KR20200015071A (ko) 2018-08-02 2020-02-12 (주)포인트엔지니어링 마이크로 led 전사헤드
KR20200015076A (ko) 2018-08-02 2020-02-12 (주)포인트엔지니어링 마이크로 led 전사를 위한 열풍헤드 및 이를 이용한 마이크로led 전사 시스템
KR20200020207A (ko) 2018-08-16 2020-02-26 (주)포인트엔지니어링 마이크로 led 전사헤드
KR20200020208A (ko) 2018-08-16 2020-02-26 (주)포인트엔지니어링 마이크로 led 전사 시스템
KR20200025079A (ko) 2018-08-29 2020-03-10 (주)포인트엔지니어링 전사헤드
JP6652999B1 (ja) * 2018-09-04 2020-02-26 国立大学法人東京農工大学 食品検査装置及び食品検査方法
KR102102058B1 (ko) 2018-11-07 2020-04-17 한국광기술원 마이크로 led용 칩 이송장치 및 이송방법
KR20200053841A (ko) 2018-11-09 2020-05-19 (주)포인트엔지니어링 마이크로 led 위치 오차 보정 캐리어 및 마이크로 led 전사시스템
KR20200085507A (ko) 2019-01-07 2020-07-15 (주)포인트엔지니어링 마이크로 led 전사헤드
KR20200095909A (ko) 2019-02-01 2020-08-11 (주)포인트엔지니어링 마이크로 led 전사헤드
KR20200099019A (ko) 2019-02-13 2020-08-21 (주)포인트엔지니어링 마이크로 led 흡착체
TWI698964B (zh) * 2019-03-15 2020-07-11 台灣愛司帝科技股份有限公司 晶片固接結構及晶片固接設備
WO2020191593A1 (zh) * 2019-03-25 2020-10-01 厦门市三安光电科技有限公司 微发光组件、微发光二极管及微发光二极管转印方法
JP2019140400A (ja) * 2019-04-08 2019-08-22 ゴルテック．インク マイクロ発光ダイオードの事前排除方法、製造方法、装置及び電子機器
KR20200129751A (ko) 2019-05-10 2020-11-18 (주)포인트엔지니어링 마이크로 led 흡착체 및 이를 이용한 마이크로 led 디스플레이 제작 방법 및 마이크로 led 디스플레이
KR20200135069A (ko) 2019-05-24 2020-12-02 (주)포인트엔지니어링 마이크로 led 디스플레이 제작 방법 및 이를 이용한 마이크로 led 디스플레이
KR102313606B1 (ko) * 2019-09-02 2021-10-19 주식회사 에이맵플러스 도전성 캐리어 및 디스플레이 패널의 제조방법
US11152534B2 (en) 2019-08-07 2021-10-19 Point Engineering Co., Ltd. Transfer head and method of manufacturing micro LED display using same
KR102819268B1 (ko) 2019-08-14 2025-06-11 (주)포인트엔지니어링 마이크로 led 전사헤드
KR20210020421A (ko) 2019-08-14 2021-02-24 (주)포인트엔지니어링 마이크로 소자 디스플레이 제조 방법
KR20210025216A (ko) 2019-08-27 2021-03-09 (주)포인트엔지니어링 마이크로 led 리페어 장치 및 이를 이용한 마이크로 led 디스플레이 제조방법
CN114902387A (zh) * 2019-12-18 2022-08-12 首尔伟傲世有限公司 微型led转印方法及微型led转印装置
KR102168570B1 (ko) 2020-03-03 2020-10-21 오재열 마이크로 led 전사 기판
JP7480300B2 (ja) * 2020-03-09 2024-05-09 湖北三安光電有限公司 マイクロ発光ダイオードのエピタキシャル構造及びその製造方法
TWI740486B (zh) * 2020-05-05 2021-09-21 達邁科技股份有限公司 微型ｌｅｄ巨量轉移至顯示器面板之方法
KR20220014750A (ko) 2020-07-29 2022-02-07 (주)포인트엔지니어링 미소 소자 이송체 및 이를 이용한 미소 소자 정렬 방법
KR20220021173A (ko) 2020-08-13 2022-02-22 (주)포인트엔지니어링 미소 소자 이송체 및 이를 포함하는 미소 소자 전사 시스템 및 미소 소자가 실장되는 전자 제품의 제조 방법
US11367745B2 (en) 2020-08-20 2022-06-21 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and methods for sensing long wavelength light
EP4318057A4 (en) 2021-03-29 2024-11-06 FUJIFILM Corporation BLACK PHOTOSENSITIVE COMPOSITION, METHOD FOR MANUFACTURING BLACK PHOTOSENSITIVE COMPOSITION, CURED FILM, COLOR FILTER, LIGHT-SHIELDING FILM, OPTICAL ELEMENT, SOLID-STATE IMAGE PICK-UP ELEMENT, AND HEADLIGHT UNIT
WO2023048148A1 (ja) 2021-09-22 2023-03-30 デクセリアルズ株式会社 接続構造体の製造方法
TWI887662B (zh) * 2022-06-01 2025-06-21 美商科銳Ｌｅｄ公司 用於減少接合金屬之空洞的發光二極體晶片中的接觸結構
JP2025178723A (ja) * 2024-05-27 2025-12-09 三菱マテリアル株式会社 半導体デバイス製造用キャリア基板及び半導体デバイス製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100176415A1 (en) * 2009-01-14 2010-07-15 Samsung Electronics Co., Ltd. Light emitting device with improved light extraction efficiency

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06334217A (ja) * 1993-05-25 1994-12-02 Victor Co Of Japan Ltd Ｌｅｄアレイ装置
US6080650A (en) * 1998-02-04 2000-06-27 Texas Instruments Incorporated Method and apparatus for attaching particles to a substrate
HK1048709A1 (zh) * 1999-12-03 2003-04-11 Cree, Inc. 透过使用内置及外置光元件提高发光二极管(led)中的抽光效果
DE10245631B4 (de) * 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
KR100493031B1 (ko) * 2002-11-08 2005-06-07 삼성전자주식회사 액정 표시 장치를 구동하는 반응 시간 가속 장치 및 그 방법
CN1742394A (zh) * 2003-01-21 2006-03-01 西门子公司 有机电子元件的封装及其制造方法
JP4580633B2 (ja) * 2003-11-14 2010-11-17 スタンレー電気株式会社 半導体装置及びその製造方法
JP3994980B2 (ja) * 2004-03-29 2007-10-24 株式会社日立製作所 素子搭載用基板及びその製造方法並びに半導体素子実装方法
JP4632690B2 (ja) * 2004-05-11 2011-02-16 スタンレー電気株式会社 半導体発光装置とその製造方法
US7195944B2 (en) * 2005-01-11 2007-03-27 Semileds Corporation Systems and methods for producing white-light emitting diodes
JP4848638B2 (ja) * 2005-01-13 2011-12-28 ソニー株式会社 半導体素子の形成方法および半導体素子のマウント方法
KR100707955B1 (ko) * 2005-02-07 2007-04-16 (주) 비앤피 사이언스 발광 다이오드 및 이의 제조 방법
KR20070042214A (ko) * 2005-10-18 2007-04-23 김성진 질화물 반도체 발광 다이오드 및 그 제조방법
KR100778820B1 (ko) * 2006-04-25 2007-11-22 포항공과대학교 산학협력단 금속 전극 형성 방법 및 반도체 발광 소자의 제조 방법 및질화물계 화합물 반도체 발광 소자
JP5126875B2 (ja) * 2006-08-11 2013-01-23 シャープ株式会社 窒化物半導体発光素子の製造方法
JP4835409B2 (ja) * 2006-11-30 2011-12-14 豊田合成株式会社 Ｉｉｉ−ｖ族半導体素子、およびその製造方法
US7795054B2 (en) * 2006-12-08 2010-09-14 Samsung Led Co., Ltd. Vertical structure LED device and method of manufacturing the same
US7568795B2 (en) * 2006-12-22 2009-08-04 Xerox Corporation Heated ink delivery system
JP2008186959A (ja) * 2007-01-29 2008-08-14 Toyoda Gosei Co Ltd Ｉｉｉ−ｖ族半導体素子、およびその製造方法
TW200834962A (en) * 2007-02-08 2008-08-16 Touch Micro System Tech LED array package structure having Si-substrate and method of making the same
JP4290745B2 (ja) * 2007-03-16 2009-07-08 豊田合成株式会社 Ｉｉｉ−ｖ族半導体素子の製造方法
JP4844506B2 (ja) * 2007-08-28 2011-12-28 パナソニック電工株式会社 発光装置
JP4809308B2 (ja) * 2007-09-21 2011-11-09 新光電気工業株式会社 基板の製造方法
US8222063B2 (en) * 2008-03-26 2012-07-17 Lattice Power (Jiangxi) Corporation Method for fabricating robust light-emitting diodes
JP5123269B2 (ja) * 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
US7854365B2 (en) * 2008-10-27 2010-12-21 Asm Assembly Automation Ltd Direct die attach utilizing heated bond head
JP2010186829A (ja) * 2009-02-10 2010-08-26 Toshiba Corp 発光素子の製造方法
US8937327B2 (en) * 2009-03-31 2015-01-20 Seoul Semiconductor Co., Ltd. Light emitting device having plurality of light emitting cells and method of fabricating the same
TWI485879B (zh) * 2009-04-09 2015-05-21 隆達電子股份有限公司 發光二極體晶片及其製造方法
US8173456B2 (en) * 2009-07-05 2012-05-08 Industrial Technology Research Institute Method of manufacturing a light emitting diode element
KR100973928B1 (ko) * 2009-12-10 2010-08-03 (주)옵토니카 Ｌｅｄ 다이본딩 방법
TWI467798B (zh) * 2009-12-28 2015-01-01 Hon Hai Prec Ind Co Ltd 發光二極體晶片之製備方法
KR20110123118A (ko) * 2010-05-06 2011-11-14 삼성전자주식회사 패터닝된 발광부를 구비한 수직형 발광소자
JP2010263251A (ja) * 2010-08-25 2010-11-18 Sanyo Electric Co Ltd 発光素子およびその製造方法
JP4778107B1 (ja) * 2010-10-19 2011-09-21 有限会社ナプラ 発光デバイス、及び、その製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100176415A1 (en) * 2009-01-14 2010-07-15 Samsung Electronics Co., Ltd. Light emitting device with improved light extraction efficiency

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11069726B2 (en) 2018-02-06 2021-07-20 Samsung Display Co., Ltd. Method of manufacturing display device
US11776973B2 (en) 2018-02-06 2023-10-03 Samsung Display Co., Ltd. Method of manufacturing display device
US12593723B2 (en) 2019-10-08 2026-03-31 Samsung Display Co., Ltd. Pixel, display device including same, and manufacturing method therefor
CN115020550A (zh) * 2021-03-03 2022-09-06 苹果公司 具有器件层竖直位置的精确控制的用于管芯到晶片器件层转移的方法

Also Published As

Publication number Publication date
JP2014533890A (ja) 2014-12-15
EP2780954A1 (en) 2014-09-24
JP6100275B2 (ja) 2017-03-22
CN104106149A (zh) 2014-10-15
WO2013074372A1 (en) 2013-05-23
TWI559572B (zh) 2016-11-21
AU2012339938A1 (en) 2014-06-05
IN2014CN03711A (https=) 2015-10-09
TW201330320A (zh) 2013-07-16
WO2013074370A1 (en) 2013-05-23
MX2014006031A (es) 2015-01-16
KR20140112486A (ko) 2014-09-23
TWI568021B (zh) 2017-01-21
TW201327910A (zh) 2013-07-01
EP2780954A4 (en) 2015-07-22
AU2012339938B2 (en) 2015-02-19
MX336453B (es) 2016-01-20
BR112014011807A2 (pt) 2017-05-16
EP2780954B1 (en) 2019-10-16

Similar Documents

Publication Publication Date Title
KR101596386B1 (ko) 전기 절연 층을 갖는 마이크로 led 구조체 및 마이크로 led 구조체들의 어레이를 형성하는 방법
KR101638274B1 (ko) 자가-정렬 금속화 스택을 구비한 마이크로 led 디바이스를 형성하는 방법
US8573469B2 (en) Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer
US8518204B2 (en) Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer
KR101704152B1 (ko) 마이크로 발광 다이오드
CN104106149B (zh) 形成微led结构和具有电绝缘层的微led结构阵列的方法

Legal Events

Date Code Title Description
A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20190116

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20200115

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 11

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000