KR101590533B1 - 진공 처리 장치 및 그 운전 방법 - Google Patents

진공 처리 장치 및 그 운전 방법 Download PDF

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Publication number
KR101590533B1
KR101590533B1 KR1020140010133A KR20140010133A KR101590533B1 KR 101590533 B1 KR101590533 B1 KR 101590533B1 KR 1020140010133 A KR1020140010133 A KR 1020140010133A KR 20140010133 A KR20140010133 A KR 20140010133A KR 101590533 B1 KR101590533 B1 KR 101590533B1
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South Korea
Prior art keywords
vacuum
chamber
vacuum transfer
container
processing
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Korean (ko)
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KR20140113324A (ko
Inventor
료이치 이소무라
유타카 구도
다카히로 시모무라
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020140010133A 2013-03-14 2014-01-28 진공 처리 장치 및 그 운전 방법 Active KR101590533B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-051971 2013-03-14
JP2013051971A JP6120621B2 (ja) 2013-03-14 2013-03-14 真空処理装置及びその運転方法

Publications (2)

Publication Number Publication Date
KR20140113324A KR20140113324A (ko) 2014-09-24
KR101590533B1 true KR101590533B1 (ko) 2016-02-01

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ID=51503975

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KR1020140010133A Active KR101590533B1 (ko) 2013-03-14 2014-01-28 진공 처리 장치 및 그 운전 방법

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Country Link
US (1) US9748124B2 (enExample)
JP (1) JP6120621B2 (enExample)
KR (1) KR101590533B1 (enExample)
CN (1) CN104051295B (enExample)
TW (1) TWI555115B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190111738A (ko) * 2018-03-23 2019-10-02 가부시키가이샤 히다치 하이테크놀로지즈 진공 처리 장치의 운전 방법

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6718755B2 (ja) * 2016-06-22 2020-07-08 株式会社日立ハイテク 真空処理装置およびその運転方法
CN117855106A (zh) * 2016-06-30 2024-04-09 株式会社国际电气 衬底处理装置、半导体器件的制造方法及记录介质
JP6902379B2 (ja) 2017-03-31 2021-07-14 東京エレクトロン株式会社 処理システム
CN110544660B (zh) * 2018-08-02 2022-08-16 北京北方华创微电子装备有限公司 模块化晶圆传输系统和半导体设备
US10483142B1 (en) * 2018-09-14 2019-11-19 Lam Research Corporation Vacuum robot positioning system with reduced sensitivity to chamber pressure
KR102515863B1 (ko) * 2020-03-24 2023-03-31 주식회사 히타치하이테크 진공 처리 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100908285B1 (ko) 2007-01-12 2009-07-17 가부시키가이샤 히다치 하이테크놀로지즈 진공처리장치 및 그 진공처리장치를 사용한 진공처리방법
JP2012074496A (ja) 2010-09-28 2012-04-12 Hitachi High-Technologies Corp 真空処理装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150618A (ja) * 1998-11-17 2000-05-30 Tokyo Electron Ltd 真空処理システム
JP2003045947A (ja) * 2001-07-27 2003-02-14 Canon Inc 基板処理装置及び露光装置
JP2003059999A (ja) * 2001-08-14 2003-02-28 Tokyo Electron Ltd 処理システム
JP4531557B2 (ja) * 2002-05-21 2010-08-25 エーエスエム アメリカ インコーポレイテッド 半導体処理ツール内チャンバ間の相互汚染の減少
US8029226B2 (en) * 2003-11-10 2011-10-04 Brooks Automation, Inc. Semiconductor manufacturing systems
US10086511B2 (en) * 2003-11-10 2018-10-02 Brooks Automation, Inc. Semiconductor manufacturing systems
JP2007258347A (ja) * 2006-03-22 2007-10-04 Nitto Koki Kk 化合物半導体の製造方法及び化合物半導体の製造装置
KR100847888B1 (ko) * 2006-12-12 2008-07-23 세메스 주식회사 반도체 소자 제조 장치
JP2009062604A (ja) * 2007-09-10 2009-03-26 Tokyo Electron Ltd 真空処理システムおよび基板搬送方法
JP5295808B2 (ja) * 2009-02-09 2013-09-18 東京エレクトロン株式会社 パーティクル付着防止方法及び被処理基板の搬送方法
TW201123340A (en) * 2009-11-12 2011-07-01 Hitachi High Tech Corp Vacuum processing system and vacuum processing method of semiconductor processing substrate
JP2012028659A (ja) * 2010-07-27 2012-02-09 Hitachi High-Technologies Corp 真空処理装置
JP5785712B2 (ja) * 2010-12-28 2015-09-30 株式会社日立ハイテクノロジーズ 真空処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100908285B1 (ko) 2007-01-12 2009-07-17 가부시키가이샤 히다치 하이테크놀로지즈 진공처리장치 및 그 진공처리장치를 사용한 진공처리방법
JP2012074496A (ja) 2010-09-28 2012-04-12 Hitachi High-Technologies Corp 真空処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190111738A (ko) * 2018-03-23 2019-10-02 가부시키가이샤 히다치 하이테크놀로지즈 진공 처리 장치의 운전 방법
KR102131664B1 (ko) 2018-03-23 2020-07-08 주식회사 히타치하이테크 진공 처리 장치의 운전 방법

Also Published As

Publication number Publication date
CN104051295B (zh) 2017-05-10
US9748124B2 (en) 2017-08-29
CN104051295A (zh) 2014-09-17
JP2014179431A (ja) 2014-09-25
KR20140113324A (ko) 2014-09-24
US20140271049A1 (en) 2014-09-18
TWI555115B (zh) 2016-10-21
JP6120621B2 (ja) 2017-04-26
TW201448095A (zh) 2014-12-16

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