KR101589912B1 - 커패시터 및 이의 제조 방법 - Google Patents

커패시터 및 이의 제조 방법 Download PDF

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Publication number
KR101589912B1
KR101589912B1 KR1020090023929A KR20090023929A KR101589912B1 KR 101589912 B1 KR101589912 B1 KR 101589912B1 KR 1020090023929 A KR1020090023929 A KR 1020090023929A KR 20090023929 A KR20090023929 A KR 20090023929A KR 101589912 B1 KR101589912 B1 KR 101589912B1
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South Korea
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film
forming
pattern
sacrificial
film pattern
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Korean (ko)
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KR20100105090A (ko
Inventor
김용일
김대익
이윤성
강남정
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삼성전자주식회사
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Priority to KR1020090023929A priority Critical patent/KR101589912B1/ko
Priority to US12/659,769 priority patent/US8343845B2/en
Priority to JP2010063964A priority patent/JP2010226109A/ja
Priority to TW099108199A priority patent/TWI480905B/zh
Publication of KR20100105090A publication Critical patent/KR20100105090A/ko
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Publication of KR101589912B1 publication Critical patent/KR101589912B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/01—Form of self-supporting electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020090023929A 2009-03-20 2009-03-20 커패시터 및 이의 제조 방법 Active KR101589912B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020090023929A KR101589912B1 (ko) 2009-03-20 2009-03-20 커패시터 및 이의 제조 방법
US12/659,769 US8343845B2 (en) 2009-03-20 2010-03-19 Methods of manufacturing capacitor structures and methods of manufacturing semiconductor devices using the same
JP2010063964A JP2010226109A (ja) 2009-03-20 2010-03-19 キャパシタ構造物とその製造方法、及び前記キャパシタを含む半導体装置とその製造方法
TW099108199A TWI480905B (zh) 2009-03-20 2010-03-19 電容器結構及其製造方法，包含電容器結構之半導體裝置及其製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090023929A KR101589912B1 (ko) 2009-03-20 2009-03-20 커패시터 및 이의 제조 방법

Publications (2)

Publication Number Publication Date
KR20100105090A KR20100105090A (ko) 2010-09-29
KR101589912B1 true KR101589912B1 (ko) 2016-02-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090023929A Active KR101589912B1 (ko) 2009-03-20 2009-03-20 커패시터 및 이의 제조 방법

Country Status (4)

Country Link
US (1) US8343845B2 (https=)
JP (1) JP2010226109A (https=)
KR (1) KR101589912B1 (https=)
TW (1) TWI480905B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10068913B2 (en) 2016-11-28 2018-09-04 Samsung Electronics Co., Ltd. Three dimensional semiconductor devices
US11984446B2 (en) 2021-07-21 2024-05-14 SK Hynix Inc. Semiconductor device with capacitors having different dielectric layer heights
US12369309B2 (en) 2021-07-28 2025-07-22 Samsung Electronics Co., Ltd. Semiconductor device including a support layer with openings

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KR20120045461A (ko) * 2010-10-29 2012-05-09 삼성전자주식회사 아일랜드형 지지 패턴들을 갖는 반도체 소자
KR101776284B1 (ko) * 2011-03-03 2017-09-20 삼성전자주식회사 반도체 기억 소자의 제조 방법
KR101901787B1 (ko) * 2012-03-23 2018-09-28 삼성전자주식회사 반도체 기억 소자 및 반도체 기억 소자의 형성 방법
KR101934421B1 (ko) 2012-11-13 2019-01-03 삼성전자 주식회사 반도체 소자 및 이의 제조 방법
KR102193685B1 (ko) 2014-05-02 2020-12-21 삼성전자주식회사 수직 구조의 비휘발성 메모리 소자
CN105321886B (zh) * 2014-05-29 2019-07-05 联华电子股份有限公司 电容器结构及其制造方法
KR102414612B1 (ko) * 2015-10-13 2022-07-01 삼성전자주식회사 반도체 소자 및 그 제조 방법
US9536939B1 (en) * 2015-10-28 2017-01-03 International Business Machines Corporation High density vertically integrated FEOL MIM capacitor
KR102623547B1 (ko) * 2016-12-08 2024-01-10 삼성전자주식회사 반도체 소자
US10366901B2 (en) 2017-03-06 2019-07-30 Micron Technology, Inc. Integrated structures, capacitors and methods of forming capacitors
CN108110025B (zh) * 2017-12-07 2023-11-17 长鑫存储技术有限公司 电容器阵列结构及其制造方法
KR102609519B1 (ko) * 2018-11-12 2023-12-04 삼성전자주식회사 반도체 소자
US10833092B2 (en) * 2019-01-23 2020-11-10 Micron Technology, Inc. Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devices
US11049864B2 (en) * 2019-05-17 2021-06-29 Micron Technology, Inc. Apparatuses including capacitor structures, and related memory devices, electronic systems, and methods
US11342333B2 (en) * 2019-09-26 2022-05-24 Nanya Technology Corporation Semiconductor device
CN114068540B (zh) * 2020-07-31 2026-03-24 中国科学院微电子研究所 半导体电容器结构及制造方法
CN115206970B (zh) * 2021-04-13 2026-03-24 中国科学院微电子研究所 电容器、半导体器件、电子设备及其制造方法
CN115643752B (zh) * 2021-07-20 2026-03-27 长鑫存储技术有限公司 半导体结构及制备方法
KR20230018830A (ko) 2021-07-30 2023-02-07 삼성전자주식회사 서포터 구조체를 갖는 반도체 소자
CN115996561B (zh) * 2021-10-18 2025-05-09 长鑫存储技术有限公司 电容器的形成方法及半导体器件
CN114121817B (zh) * 2021-10-18 2024-05-03 长鑫存储技术有限公司 存储器件及其形成方法
KR20230125607A (ko) * 2022-02-21 2023-08-29 에스케이하이닉스 주식회사 캐패시터를 구비하는 반도체 장치 및 그 제조방법
KR20230171742A (ko) * 2022-06-14 2023-12-21 삼성전자주식회사 커패시터 구조체, 그를 포함하는 반도체 메모리 장치 및 그의 제조 방법
KR20240165533A (ko) * 2023-05-16 2024-11-25 삼성전자주식회사 커패시터 및 이를 포함하는 반도체 소자
US20250022912A1 (en) * 2023-07-14 2025-01-16 Taiwan Semiconductor Manufacturing Company Limited High density capacitor and methods of forming the same

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JP2003264246A (ja) 2002-02-05 2003-09-19 Samsung Electronics Co Ltd 半導体装置のキャパシタ及びその製造方法
KR100716641B1 (ko) 2006-06-29 2007-05-09 주식회사 하이닉스반도체 비정질카본층을 이용한 실린더형 캐패시터 제조 방법

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KR100506944B1 (ko) 2003-11-03 2005-08-05 삼성전자주식회사 지지층 패턴들을 채택하는 복수개의 커패시터들 및 그제조방법
KR100459707B1 (ko) * 2002-03-21 2004-12-04 삼성전자주식회사 실린더형 커패시터를 포함하는 반도체 소자 및 그 제조 방법
KR100538098B1 (ko) * 2003-08-18 2005-12-21 삼성전자주식회사 개선된 구조적 안정성 및 향상된 캐패시턴스를 갖는캐패시터를 포함하는 반도체 장치 및 그 제조 방법
US7125781B2 (en) * 2003-09-04 2006-10-24 Micron Technology, Inc. Methods of forming capacitor devices
KR100622284B1 (ko) * 2004-06-03 2006-09-14 삼성전자주식회사 커패시터의 하부 전극 형성 방법
KR100599098B1 (ko) 2004-08-26 2006-07-12 삼성전자주식회사 커패시터의 제조 방법
DE102004063949B4 (de) * 2004-09-09 2008-10-16 Qimonda Ag Verfahren zum Herstellen eines eine becherförmige Elektrodenstruktur aufweisenden Kondensators
US7557015B2 (en) * 2005-03-18 2009-07-07 Micron Technology, Inc. Methods of forming pluralities of capacitors
KR100891647B1 (ko) * 2007-02-01 2009-04-02 삼성전자주식회사 반도체 장치 및 그 형성 방법
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US7951668B2 (en) * 2009-01-14 2011-05-31 Powerchip Semiconductor Corp. Process for fabricating crown capacitors of dram and capacitor structure
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JP2003264246A (ja) 2002-02-05 2003-09-19 Samsung Electronics Co Ltd 半導体装置のキャパシタ及びその製造方法
KR100716641B1 (ko) 2006-06-29 2007-05-09 주식회사 하이닉스반도체 비정질카본층을 이용한 실린더형 캐패시터 제조 방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10068913B2 (en) 2016-11-28 2018-09-04 Samsung Electronics Co., Ltd. Three dimensional semiconductor devices
US11984446B2 (en) 2021-07-21 2024-05-14 SK Hynix Inc. Semiconductor device with capacitors having different dielectric layer heights
US12369309B2 (en) 2021-07-28 2025-07-22 Samsung Electronics Co., Ltd. Semiconductor device including a support layer with openings

Also Published As

Publication number Publication date
US8343845B2 (en) 2013-01-01
TW201106397A (en) 2011-02-16
JP2010226109A (ja) 2010-10-07
KR20100105090A (ko) 2010-09-29
TWI480905B (zh) 2015-04-11
US20100240179A1 (en) 2010-09-23

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