KR101539416B1 - 증착 비균일성을 감소시킴으로써 채널 반도체 합금을 포함하는 트랜지스터에서의 임계 전압 변화의 감소 - Google Patents

증착 비균일성을 감소시킴으로써 채널 반도체 합금을 포함하는 트랜지스터에서의 임계 전압 변화의 감소 Download PDF

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KR101539416B1
KR101539416B1 KR1020117018048A KR20117018048A KR101539416B1 KR 101539416 B1 KR101539416 B1 KR 101539416B1 KR 1020117018048 A KR1020117018048 A KR 1020117018048A KR 20117018048 A KR20117018048 A KR 20117018048A KR 101539416 B1 KR101539416 B1 KR 101539416B1
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silicon
semiconductor
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KR20120067973A (ko
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스테판 크론홀츠
안드레아스 오트
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
에이엠디 팹 36 리미티드 라이어빌리티 컴퍼니 & 코. 카게
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H10D84/014—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
KR1020117018048A 2008-12-31 2009-12-29 증착 비균일성을 감소시킴으로써 채널 반도체 합금을 포함하는 트랜지스터에서의 임계 전압 변화의 감소 Expired - Fee Related KR101539416B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102008063402.6 2008-12-31
DE102008063402A DE102008063402B4 (de) 2008-12-31 2008-12-31 Verringerung der Schwellwertspannungsfluktuation in Transistoren mit einer Kanalhalbleiterlegierung durch Verringern der Abscheideungleichmäßigkeiten
US12/637,112 2009-12-14
US12/637,112 US8236654B2 (en) 2008-12-31 2009-12-14 Reduction of threshold voltage variation in transistors comprising a channel semiconductor alloy by reducing deposition non-uniformities

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KR20120067973A KR20120067973A (ko) 2012-06-26
KR101539416B1 true KR101539416B1 (ko) 2015-07-27

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US (1) US8236654B2 (enExample)
JP (1) JP5669752B2 (enExample)
KR (1) KR101539416B1 (enExample)
CN (1) CN102341906B (enExample)
DE (1) DE102008063402B4 (enExample)
WO (1) WO2010076018A1 (enExample)

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DE102009006886B4 (de) 2009-01-30 2012-12-06 Advanced Micro Devices, Inc. Verringerung von Dickenschwankungen einer schwellwerteinstellenden Halbleiterlegierung durch Verringern der Strukturierungsungleichmäßigkeiten vor dem Abscheiden der Halbleiterlegierung
JP5605134B2 (ja) * 2010-09-30 2014-10-15 富士通セミコンダクター株式会社 半導体装置及びその製造方法
DE102010063296B4 (de) * 2010-12-16 2012-08-16 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Herstellungsverfahren mit reduzierter STI-Topograpie für Halbleiterbauelemente mit einer Kanalhalbleiterlegierung
US8609509B2 (en) * 2011-09-22 2013-12-17 Globalfoundries Inc. Superior integrity of high-k metal gate stacks by forming STI regions after gate metals
US8377773B1 (en) * 2011-10-31 2013-02-19 Globalfoundries Inc. Transistors having a channel semiconductor alloy formed in an early process stage based on a hard mask
US8541281B1 (en) 2012-08-17 2013-09-24 Globalfoundries Inc. Replacement gate process flow for highly scaled semiconductor devices
US8969190B2 (en) 2012-08-24 2015-03-03 Globalfoundries Inc. Methods of forming a layer of silicon on a layer of silicon/germanium
US9029919B2 (en) 2013-02-01 2015-05-12 Globalfoundries Inc. Methods of forming silicon/germanium protection layer above source/drain regions of a transistor and a device having such a protection layer

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JP2006332687A (ja) * 2006-07-10 2006-12-07 Fujitsu Ltd Ｃｍｏｓ半導体装置

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WO2010076018A1 (en) 2010-07-08
CN102341906A (zh) 2012-02-01
CN102341906B (zh) 2014-10-15
JP5669752B2 (ja) 2015-02-18
JP2012514318A (ja) 2012-06-21
DE102008063402A1 (de) 2010-07-08
US8236654B2 (en) 2012-08-07
US20100164014A1 (en) 2010-07-01
DE102008063402B4 (de) 2013-10-17
KR20120067973A (ko) 2012-06-26

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St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20180721

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20180721

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000