KR101536798B1 - 반사방지 코팅 조성물 - Google Patents

반사방지 코팅 조성물 Download PDF

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Publication number
KR101536798B1
KR101536798B1 KR1020107027326A KR20107027326A KR101536798B1 KR 101536798 B1 KR101536798 B1 KR 101536798B1 KR 1020107027326 A KR1020107027326 A KR 1020107027326A KR 20107027326 A KR20107027326 A KR 20107027326A KR 101536798 B1 KR101536798 B1 KR 101536798B1
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polymer
antireflective coating
photoresist
coating composition
film
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Korean (ko)
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KR20110042263A (ko
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휘롱 야오
꾸안양 린
지안 인
헝펑 우
마크 나이서
랠프 알 대멀
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메르크 파텐트 게엠베하
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/02—Polyamines
    • C08G73/0273—Polyamines containing heterocyclic moieties in the main chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/0622—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms
    • C08G73/0638—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms with at least three nitrogen atoms in the ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/0622—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms
    • C08G73/0638—Polycondensates containing six-membered rings, not condensed with other rings, with nitrogen atoms as the only ring hetero atoms with at least three nitrogen atoms in the ring
    • C08G73/0644—Poly(1,3,5)triazines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/0666—Polycondensates containing five-membered rings, condensed with other rings, with nitrogen atoms as the only ring hetero atoms
    • C08G73/0677—Polycondensates containing five-membered rings, condensed with other rings, with nitrogen atoms as the only ring hetero atoms with only two nitrogen atoms in the ring
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D167/00—Coating compositions based on polyesters obtained by reactions forming a carboxylic ester link in the main chain; Coating compositions based on derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
    • C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
    • C08G63/68—Polyesters containing atoms other than carbon, hydrogen and oxygen
    • C08G63/685—Polyesters containing atoms other than carbon, hydrogen and oxygen containing nitrogen
    • C08G63/6854—Polyesters containing atoms other than carbon, hydrogen and oxygen containing nitrogen derived from polycarboxylic acids and polyhydroxy compounds

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Polyethers (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
KR1020107027326A 2008-07-08 2009-04-29 반사방지 코팅 조성물 Active KR101536798B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/133,567 US8329387B2 (en) 2008-07-08 2008-07-08 Antireflective coating compositions
US12/133,567 2008-07-08
PCT/IB2009/005486 WO2010004378A1 (en) 2008-07-08 2009-04-29 Antirelective coating compositions

Publications (2)

Publication Number Publication Date
KR20110042263A KR20110042263A (ko) 2011-04-26
KR101536798B1 true KR101536798B1 (ko) 2015-07-14

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KR1020107027326A Active KR101536798B1 (ko) 2008-07-08 2009-04-29 반사방지 코팅 조성물

Country Status (8)

Country Link
US (1) US8329387B2 (enExample)
EP (1) EP2300507B1 (enExample)
JP (1) JP5765854B2 (enExample)
KR (1) KR101536798B1 (enExample)
CN (1) CN102056954B (enExample)
MY (1) MY155289A (enExample)
TW (1) TWI510577B (enExample)
WO (1) WO2010004378A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11385545B2 (en) 2018-09-06 2022-07-12 Samsung Sdi Co., Ltd. Resist underlayer composition, and method of forming patterns using the composition

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8221965B2 (en) * 2008-07-08 2012-07-17 Az Electronic Materials Usa Corp. Antireflective coating compositions
US20100092894A1 (en) * 2008-10-14 2010-04-15 Weihong Liu Bottom Antireflective Coating Compositions
US9244352B2 (en) * 2009-05-20 2016-01-26 Rohm And Haas Electronic Materials, Llc Coating compositions for use with an overcoated photoresist
US8501383B2 (en) * 2009-05-20 2013-08-06 Rohm And Haas Electronic Materials Llc Coating compositions for use with an overcoated photoresist
US8507192B2 (en) * 2010-02-18 2013-08-13 Az Electronic Materials Usa Corp. Antireflective compositions and methods of using same
US8445181B2 (en) 2010-06-03 2013-05-21 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
EP2472329B1 (en) * 2010-12-31 2013-06-05 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
US8465902B2 (en) 2011-02-08 2013-06-18 Az Electronic Materials Usa Corp. Underlayer coating composition and processes thereof
US9170494B2 (en) 2012-06-19 2015-10-27 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective compositions and methods of using same
US8900797B2 (en) 2012-09-26 2014-12-02 Az Electronic Materials (Luxembourg) S.A.R.L. Developable bottom anti-reflective coating
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
WO2015012177A1 (ja) * 2013-07-24 2015-01-29 Jsr株式会社 パターン形成方法
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
WO2015098525A1 (ja) * 2013-12-27 2015-07-02 日産化学工業株式会社 トリアジン環及び硫黄原子を主鎖に有する共重合体を含むレジスト下層膜形成組成物
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
JP6086618B2 (ja) * 2015-02-13 2017-03-01 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、及びレジスト膜
KR102441290B1 (ko) * 2015-07-29 2022-09-07 주식회사 동진쎄미켐 유기 반사방지막 형성용 조성물
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US10203602B2 (en) * 2016-09-30 2019-02-12 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
KR102047538B1 (ko) * 2017-02-03 2019-11-21 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
US20180364575A1 (en) * 2017-06-15 2018-12-20 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
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US20210271168A1 (en) * 2018-06-26 2021-09-02 Nissan Chemical Corporation Resist underlying film-forming composition comprising a reaction product with a glycidyl ester compound
WO2020121967A1 (ja) * 2018-12-12 2020-06-18 Jsr株式会社 感光性樹脂組成物、レジストパターン膜の製造方法、およびメッキ造形物の製造方法
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990082462A (ko) * 1996-03-07 1999-11-25 데머 얀, 당코 제니아 떼. 이상 분산에 의한 굴절율 변형을 통한 바닥 역반사성 코팅체
KR20050061523A (ko) * 2002-10-09 2005-06-22 닛산 가가쿠 고교 가부시키 가이샤 리소그라피용 반사방지막 형성 조성물
KR20060048011A (ko) * 2004-05-18 2006-05-18 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. 상층 코팅된 포토레지스트와 함께 사용하기 위한 코팅조성물
KR20070065433A (ko) * 2004-10-12 2007-06-22 닛산 가가쿠 고교 가부시키 가이샤 유황원자를 포함하는 리소그래피용 반사방지막 형성 조성물

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3215758A (en) 1961-05-10 1965-11-02 Gulf Oil Corp Condensation polymers
US3279940A (en) 1963-05-13 1966-10-18 Gulf Oil Corp Polyethylene and polypropylene containers coated with a polyester resin
US3448084A (en) 1964-06-10 1969-06-03 Gulf Oil Corp Polyesters from tris(2-hydroxyethyl) isocyanurate
US3477996A (en) 1965-03-29 1969-11-11 Allied Chem Polyesters prepared from tris - (2-hydroxyalkyl) isocyanurates and ethylenically unsaturated dicarboxylic acid anhydrides
US3474054A (en) 1966-09-13 1969-10-21 Permalac Corp The Surface coating compositions containing pyridine salts or aromatic sulfonic acids
US3476718A (en) 1967-07-17 1969-11-04 Hercules Inc Polymers of epoxy cyclic sulfones
US3711391A (en) 1971-05-18 1973-01-16 American Can Co Photopolymerizable epoxy systems containing sulfoxide gelation inhibitors
US4058537A (en) 1976-01-05 1977-11-15 Ciba-Geigy Corporation Esters of anhydride aromatic polycarboxylic acids with perfluoroalkyl alcohols
US4064191A (en) 1976-03-10 1977-12-20 American Cyanamid Company Coating composition containing an alkylated glycoluril, a polymeric non-self-crosslinking compound and an acid catalyst
US4118437A (en) 1976-04-08 1978-10-03 American Cyanamid Company Cross linkable powder coating compositions
US4200729A (en) 1978-05-22 1980-04-29 King Industries, Inc Curing amino resins with aromatic sulfonic acid oxa-azacyclopentane adducts
US4251665A (en) 1978-05-22 1981-02-17 King Industries, Inc. Aromatic sulfonic acid oxa-azacyclopentane adducts
US4255558A (en) 1979-06-18 1981-03-10 Scm Corporation Self-curing thermosetting powder paints
US4309529A (en) 1980-05-12 1982-01-05 Minnesota Mining And Manufacturing Company Water-dispersible energy curable heterocyclic group-containing polyesters
DE3265701D1 (en) 1981-02-13 1985-10-03 Ciba Geigy Ag Curable compositions containing an acid-curable resin, and process for curing them
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPH01293339A (ja) 1988-05-23 1989-11-27 Tosoh Corp フォトレジスト組成物
EP0440374B1 (en) 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemical amplified resist material
US5187019A (en) 1991-09-06 1993-02-16 King Industries, Inc. Latent catalysts
US5380804A (en) 1993-01-27 1995-01-10 Cytec Technology Corp. 1,3,5-tris-(2-carboxyethyl) isocyanurate crosslinking agent for polyepoxide coatings
WO1996028764A1 (en) 1993-09-02 1996-09-19 Goo Chemical Industries Co., Ltd. Photosensitive resin composition, and coating film, resist ink, resist, solder resist and printed circuit board each produced therefrom
US5693691A (en) 1995-08-21 1997-12-02 Brewer Science, Inc. Thermosetting anti-reflective coatings compositions
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US5998099A (en) 1996-03-08 1999-12-07 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
EP0851300B1 (en) 1996-12-24 2001-10-24 Fuji Photo Film Co., Ltd. Bottom anti-reflective coating material composition and method of forming resist pattern using the same
KR100265597B1 (ko) 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
US6274295B1 (en) 1997-03-06 2001-08-14 Clariant Finance (Bvi) Limited Light-absorbing antireflective layers with improved performance due to refractive index optimization
WO2001030896A1 (en) 1999-10-27 2001-05-03 Kaneka Corporation Extruded styrene resin foam and process for producing the same
US6686124B1 (en) 2000-03-14 2004-02-03 International Business Machines Corporation Multifunctional polymeric materials and use thereof
US6323310B1 (en) 2000-04-19 2001-11-27 Brewer Science, Inc. Anti-reflective coating compositions comprising polymerized aminoplasts
JP3971088B2 (ja) 2000-06-30 2007-09-05 株式会社東芝 パターン形成方法
KR100734249B1 (ko) 2000-09-07 2007-07-02 삼성전자주식회사 축합환의 방향족 환을 포함하는 보호기를 가지는 감광성폴리머 및 이를 포함하는 레지스트 조성물
US6509417B1 (en) 2000-10-31 2003-01-21 Lilly Industries, Inc. Coating of fatty acid-modified glycidyl copolymer, OH polymer and optional anhydride polymer
JP3804792B2 (ja) 2001-04-10 2006-08-02 日産化学工業株式会社 リソグラフィー用反射防止膜形成組成物
TW591341B (en) 2001-09-26 2004-06-11 Shipley Co Llc Coating compositions for use with an overcoated photoresist
EP1315043A1 (en) 2001-11-27 2003-05-28 Fujitsu Limited Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof
US6488509B1 (en) 2002-01-23 2002-12-03 Taiwan Semiconductor Manufacturing Company Plug filling for dual-damascene process
US6806026B2 (en) 2002-05-31 2004-10-19 International Business Machines Corporation Photoresist composition
US7038328B2 (en) 2002-10-15 2006-05-02 Brewer Science Inc. Anti-reflective compositions comprising triazine compounds
CN101550265B (zh) * 2003-04-02 2014-04-16 日产化学工业株式会社 含有环氧化合物和羧酸化合物的光刻用形成下层膜的组合物
US7186789B2 (en) 2003-06-11 2007-03-06 Advanced Cardiovascular Systems, Inc. Bioabsorbable, biobeneficial polyester polymers for use in drug eluting stent coatings
TWI363251B (en) 2003-07-30 2012-05-01 Nissan Chemical Ind Ltd Sublayer coating-forming composition for lithography containing compound having protected carboxy group
TWI358612B (en) 2003-08-28 2012-02-21 Nissan Chemical Ind Ltd Polyamic acid-containing composition for forming a
US20050215713A1 (en) 2004-03-26 2005-09-29 Hessell Edward T Method of producing a crosslinked coating in the manufacture of integrated circuits
US7081511B2 (en) 2004-04-05 2006-07-25 Az Electronic Materials Usa Corp. Process for making polyesters
WO2005098542A1 (ja) * 2004-04-09 2005-10-20 Nissan Chemical Industries, Ltd. 縮合系ポリマーを有する半導体用反射防止膜
US20060057501A1 (en) * 2004-09-15 2006-03-16 Hengpeng Wu Antireflective compositions for photoresists
US7691556B2 (en) 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
US7326523B2 (en) 2004-12-16 2008-02-05 International Business Machines Corporation Low refractive index polymers as underlayers for silicon-containing photoresists
EP1691238A3 (en) 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
TWI340296B (en) * 2005-03-20 2011-04-11 Rohm & Haas Elect Mat Coating compositions for use with an overcoated photoresist
EP1742108B1 (en) 2005-07-05 2015-10-28 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
US7470500B2 (en) * 2005-07-19 2008-12-30 Az Electronic Materials Usa Corp. Organic bottom antireflective polymer compositions
WO2007036982A1 (ja) * 2005-09-27 2007-04-05 Nissan Chemical Industries, Ltd. イソシアヌル酸化合物と安息香酸化合物との反応生成物を含む反射防止膜形成組成物
US7553905B2 (en) 2005-10-31 2009-06-30 Az Electronic Materials Usa Corp. Anti-reflective coatings
JP4666166B2 (ja) 2005-11-28 2011-04-06 信越化学工業株式会社 レジスト下層膜材料及びパターン形成方法
US7816069B2 (en) 2006-06-23 2010-10-19 International Business Machines Corporation Graded spin-on organic antireflective coating for photolithography
US7638262B2 (en) 2006-08-10 2009-12-29 Az Electronic Materials Usa Corp. Antireflective composition for photoresists
WO2008026468A1 (fr) 2006-08-28 2008-03-06 Nissan Chemical Industries, Ltd. Composition servant à créer une sous-couche de réserve et contenant un additif liquide
US7416834B2 (en) 2006-09-27 2008-08-26 Az Electronic Materials Usa Corp. Antireflective coating compositions
US20080175882A1 (en) 2007-01-23 2008-07-24 Trollsas Mikael O Polymers of aliphatic thioester
US20090035704A1 (en) 2007-08-03 2009-02-05 Hong Zhuang Underlayer Coating Composition Based on a Crosslinkable Polymer
US20090042133A1 (en) 2007-08-10 2009-02-12 Zhong Xiang Antireflective Coating Composition
US7989144B2 (en) 2008-04-01 2011-08-02 Az Electronic Materials Usa Corp Antireflective coating composition
US20090274974A1 (en) 2008-04-30 2009-11-05 David Abdallah Spin-on graded k silicon antireflective coating
US7932018B2 (en) 2008-05-06 2011-04-26 Az Electronic Materials Usa Corp. Antireflective coating composition
US8221965B2 (en) 2008-07-08 2012-07-17 Az Electronic Materials Usa Corp. Antireflective coating compositions
US20100092894A1 (en) 2008-10-14 2010-04-15 Weihong Liu Bottom Antireflective Coating Compositions
AU2010230549B2 (en) 2009-04-03 2013-06-06 Polynt Composites USA Inc. Thermosetting compositions containing isocyanurate rings
US8507192B2 (en) 2010-02-18 2013-08-13 Az Electronic Materials Usa Corp. Antireflective compositions and methods of using same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990082462A (ko) * 1996-03-07 1999-11-25 데머 얀, 당코 제니아 떼. 이상 분산에 의한 굴절율 변형을 통한 바닥 역반사성 코팅체
KR20050061523A (ko) * 2002-10-09 2005-06-22 닛산 가가쿠 고교 가부시키 가이샤 리소그라피용 반사방지막 형성 조성물
KR20060048011A (ko) * 2004-05-18 2006-05-18 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. 상층 코팅된 포토레지스트와 함께 사용하기 위한 코팅조성물
KR20070065433A (ko) * 2004-10-12 2007-06-22 닛산 가가쿠 고교 가부시키 가이샤 유황원자를 포함하는 리소그래피용 반사방지막 형성 조성물

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11385545B2 (en) 2018-09-06 2022-07-12 Samsung Sdi Co., Ltd. Resist underlayer composition, and method of forming patterns using the composition
US11982943B2 (en) 2018-09-06 2024-05-14 Samsung Sdi Co., Ltd. Method of forming patterns using resist underlayer composition

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