KR101517525B1 - 반도체장치 및 반도체장치 제조방법 - Google Patents

반도체장치 및 반도체장치 제조방법 Download PDF

Info

Publication number
KR101517525B1
KR101517525B1 KR1020070062172A KR20070062172A KR101517525B1 KR 101517525 B1 KR101517525 B1 KR 101517525B1 KR 1020070062172 A KR1020070062172 A KR 1020070062172A KR 20070062172 A KR20070062172 A KR 20070062172A KR 101517525 B1 KR101517525 B1 KR 101517525B1
Authority
KR
South Korea
Prior art keywords
layer
electrode
antenna
film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020070062172A
Other languages
English (en)
Korean (ko)
Other versions
KR20070122395A (ko
Inventor
요시타카 도젠
토모유키 아오키
히데카즈 타카하시
다이키 야마다
에이지 스기야마
카오리 오기타
나오토 쿠스모토
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20070122395A publication Critical patent/KR20070122395A/ko
Application granted granted Critical
Publication of KR101517525B1 publication Critical patent/KR101517525B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49855—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers for flat-cards, e.g. credit cards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Credit Cards Or The Like (AREA)
KR1020070062172A 2006-06-26 2007-06-25 반도체장치 및 반도체장치 제조방법 Expired - Fee Related KR101517525B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00175611 2006-06-26
JP2006175611A JP5204959B2 (ja) 2006-06-26 2006-06-26 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020130073305A Division KR101517943B1 (ko) 2006-06-26 2013-06-25 반도체장치 및 반도체장치 제조방법

Publications (2)

Publication Number Publication Date
KR20070122395A KR20070122395A (ko) 2007-12-31
KR101517525B1 true KR101517525B1 (ko) 2015-05-04

Family

ID=38872782

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020070062172A Expired - Fee Related KR101517525B1 (ko) 2006-06-26 2007-06-25 반도체장치 및 반도체장치 제조방법
KR1020130073305A Expired - Fee Related KR101517943B1 (ko) 2006-06-26 2013-06-25 반도체장치 및 반도체장치 제조방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020130073305A Expired - Fee Related KR101517943B1 (ko) 2006-06-26 2013-06-25 반도체장치 및 반도체장치 제조방법

Country Status (4)

Country Link
US (4) US7851886B2 (enExample)
JP (1) JP5204959B2 (enExample)
KR (2) KR101517525B1 (enExample)
TW (1) TWI407508B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6850080B2 (en) * 2001-03-19 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Inspection method and inspection apparatus
WO2006085466A1 (ja) * 2005-02-14 2006-08-17 Matsushita Electric Industrial Co., Ltd. アンテナ内蔵半導体メモリモジュール
US20070183184A1 (en) * 2006-02-03 2007-08-09 Semiconductor Energy Laboratory Ltd. Apparatus and method for manufacturing semiconductor device
JP5029605B2 (ja) * 2006-04-03 2012-09-19 パナソニック株式会社 アンテナ内蔵半導体メモリモジュール
JP5204959B2 (ja) * 2006-06-26 2013-06-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2038818B1 (en) * 2006-06-26 2014-10-15 Semiconductor Energy Laboratory Co., Ltd. Paper including semiconductor device and manufacturing method thereof
WO2009131132A1 (en) * 2008-04-25 2009-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2010032602A1 (en) * 2008-09-18 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8441007B2 (en) 2008-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
WO2011074392A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101823500B1 (ko) * 2011-07-11 2018-01-31 삼성전자주식회사 상변화 메모리 장치의 제조 방법
TWI453677B (zh) * 2011-12-01 2014-09-21 Mutual Pak Technology Co Ltd 射頻識別標籤與具有其之衣物
US8763912B1 (en) * 2013-03-29 2014-07-01 Identive Group, Inc. Dual interface module and dual interface card having a dual interface module
US20150138699A1 (en) 2013-11-15 2015-05-21 Semiconductor Energy Laboratory Co., Ltd. Electronic device
DE102013113283A1 (de) * 2013-11-29 2015-06-03 Leonhard Kurz Stiftung & Co. Kg Mehrschichtkörper und Verfahren zu dessen Herstellung
US9184143B2 (en) * 2013-12-05 2015-11-10 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device with bump adjustment and manufacturing method thereof
JP6065848B2 (ja) 2014-01-07 2017-01-25 株式会社Sumco 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法
US10586954B2 (en) 2014-05-23 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Electronic device including secondary battery
JP6419132B2 (ja) * 2016-11-22 2018-11-07 東洋アルミエコープロダクツ株式会社 パルプモールド構造体の製造方法及びパルプモールド構造体
US11522234B2 (en) 2017-09-06 2022-12-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, battery unit, and battery module
CN110082976B (zh) * 2019-05-14 2022-08-02 上海天马微电子有限公司 显示模组和显示装置
US12406854B2 (en) * 2020-02-26 2025-09-02 Resonac Corporation Dry etching method, production method for semiconductor element, and cleaning method
KR102308784B1 (ko) * 2020-02-28 2021-10-01 한양대학교 산학협력단 텔루륨 산화물 및 이를 채널층으로 구비하는 박막트랜지스터
US11267629B2 (en) 2020-07-02 2022-03-08 Universal Trim Supply Co., Ltd. Storage bag with easy flipping feature

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261048A (ja) * 2000-12-28 2002-09-13 Seiko Epson Corp 素子製造方法および素子製造装置
JP2006135305A (ja) * 2004-10-05 2006-05-25 Semiconductor Energy Lab Co Ltd 半導体装置、半導体装置の作製方法、及び半導体装置の検査方法
JP2006165535A (ja) * 2004-11-11 2006-06-22 Semiconductor Energy Lab Co Ltd 半導体装置

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5599046A (en) * 1994-06-22 1997-02-04 Scientific Games Inc. Lottery ticket structure with circuit elements
EP1655633A3 (en) * 1996-08-27 2006-06-21 Seiko Epson Corporation Exfoliating method, transferring method of thin film device, thin film integrated circuit device, and liquid crystal display device
US20050280155A1 (en) * 2004-06-21 2005-12-22 Sang-Yun Lee Semiconductor bonding and layer transfer method
NL1008929C2 (nl) * 1998-04-20 1999-10-21 Vhp Ugchelen Bv Uit papier vervaardigd substraat voorzien van een geïntegreerde schakeling.
EP1501054B1 (de) * 1998-07-27 2008-11-26 Infineon Technologies AG Verfahren zur Prüfung der Echtheit von Urkunden
JP4350253B2 (ja) 2000-02-18 2009-10-21 株式会社日立製作所 電子回路チップ内蔵物の製造方法
JP2002298118A (ja) 2001-04-02 2002-10-11 Dainippon Printing Co Ltd 非接触方式のタグ部材が漉き込まれてなる用紙
JP3925101B2 (ja) 2001-04-19 2007-06-06 特種製紙株式会社 偽造防止用シート状物の製造方法
TW548860B (en) 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US7211828B2 (en) 2001-06-20 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic apparatus
JP4244120B2 (ja) * 2001-06-20 2009-03-25 株式会社半導体エネルギー研究所 発光装置及びその作製方法
US7973313B2 (en) 2003-02-24 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container
JP4823705B2 (ja) * 2003-02-24 2011-11-24 株式会社半導体エネルギー研究所 薄膜集積回路の作製方法及びｉｃラベルの作製方法
US8999736B2 (en) * 2003-07-04 2015-04-07 Epistar Corporation Optoelectronic system
US7566001B2 (en) * 2003-08-29 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. IC card
US7975926B2 (en) * 2003-12-26 2011-07-12 Semiconductor Energy Laboratory Co., Ltd. Paper money, coin, valuable instrument, certificates, tag, label, card, packing containers, documents, respectively installed with integrated circuit
US7508305B2 (en) * 2003-12-26 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Packing material, tag, certificate, paper money, and securities
TWI457835B (zh) * 2004-02-04 2014-10-21 Semiconductor Energy Lab 攜帶薄膜積體電路的物品
JP2005259984A (ja) * 2004-03-11 2005-09-22 Seiko Epson Corp 転写方法、半導体装置の製造方法及び電子機器
CN100468740C (zh) 2004-04-02 2009-03-11 株式会社半导体能源研究所 半导体器件及其驱动方法
JP4865248B2 (ja) * 2004-04-02 2012-02-01 株式会社半導体エネルギー研究所 半導体装置
DE102004018081A1 (de) 2004-04-08 2005-10-27 Giesecke & Devrient Gmbh Sicherheitspapier
WO2005119781A1 (en) * 2004-06-02 2005-12-15 Semiconductor Energy Laboratory Co., Ltd. Laminating system
WO2005121908A1 (en) 2004-06-14 2005-12-22 Semiconductor Energy Laboratory Co., Ltd. Copy machine with copy control function, scanner and facsimile, and piece of paper and film each installed with semiconductor device
CN100517728C (zh) 2004-06-24 2009-07-22 株式会社半导体能源研究所 制造薄膜集成电路的方法
JP4912627B2 (ja) * 2004-06-24 2012-04-11 株式会社半導体エネルギー研究所 薄膜集積回路の作製方法
US7452786B2 (en) * 2004-06-29 2008-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit, and element substrate
JP5041681B2 (ja) 2004-06-29 2012-10-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7591863B2 (en) * 2004-07-16 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip
JP4749062B2 (ja) 2004-07-16 2011-08-17 株式会社半導体エネルギー研究所 薄膜集積回路を封止する装置及びｉｃチップの作製方法
US7259106B2 (en) * 2004-09-10 2007-08-21 Versatilis Llc Method of making a microelectronic and/or optoelectronic circuitry sheet
JP4801337B2 (ja) 2004-09-21 2011-10-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2006148088A (ja) * 2004-10-22 2006-06-08 Semiconductor Energy Lab Co Ltd 半導体装置
US7935958B2 (en) 2004-10-22 2011-05-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2006051996A1 (en) 2004-11-11 2006-05-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7960719B2 (en) * 2004-12-03 2011-06-14 Semiconductor Energy Laboratotry Co., Ltd. Semiconductor device
US7482248B2 (en) * 2004-12-03 2009-01-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR100574521B1 (ko) * 2004-12-14 2006-04-27 삼성전자주식회사 화상형성장치
US7449372B2 (en) * 2004-12-17 2008-11-11 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of substrate having conductive layer and manufacturing method of semiconductor device
FR2881252A1 (fr) * 2005-01-24 2006-07-28 Ask Sa Dispositif d'idenfication radiofrequence resistant aux milieux et son procede de fabrication
US7466233B2 (en) * 2005-05-04 2008-12-16 Adalis Corporation Substrates including tape and radio frequency identification devices, and methods and apparatus for making the same
US7566971B2 (en) * 2005-05-27 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7297613B1 (en) * 2005-06-09 2007-11-20 The United States Of America As Represented By The National Security Agency Method of fabricating and integrating high quality decoupling capacitors
US7166520B1 (en) * 2005-08-08 2007-01-23 Silicon Genesis Corporation Thin handle substrate method and structure for fabricating devices using one or more films provided by a layer transfer process
US20070083381A1 (en) * 2005-10-12 2007-04-12 David Farrell Method and system for creating receipt on paper with embedded RFID tags therein
JP5204959B2 (ja) * 2006-06-26 2013-06-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP2038818B1 (en) * 2006-06-26 2014-10-15 Semiconductor Energy Laboratory Co., Ltd. Paper including semiconductor device and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261048A (ja) * 2000-12-28 2002-09-13 Seiko Epson Corp 素子製造方法および素子製造装置
JP2006135305A (ja) * 2004-10-05 2006-05-25 Semiconductor Energy Lab Co Ltd 半導体装置、半導体装置の作製方法、及び半導体装置の検査方法
JP2006165535A (ja) * 2004-11-11 2006-06-22 Semiconductor Energy Lab Co Ltd 半導体装置

Also Published As

Publication number Publication date
US20130228885A1 (en) 2013-09-05
US20110039373A1 (en) 2011-02-17
US20120080810A1 (en) 2012-04-05
US7851886B2 (en) 2010-12-14
TWI407508B (zh) 2013-09-01
KR20130083880A (ko) 2013-07-23
KR101517943B1 (ko) 2015-05-06
US8432018B2 (en) 2013-04-30
JP2008004893A (ja) 2008-01-10
JP5204959B2 (ja) 2013-06-05
KR20070122395A (ko) 2007-12-31
US8648439B2 (en) 2014-02-11
TW200814191A (en) 2008-03-16
US8039353B2 (en) 2011-10-18
US20070296037A1 (en) 2007-12-27

Similar Documents

Publication Publication Date Title
KR101517525B1 (ko) 반도체장치 및 반도체장치 제조방법
US8357567B2 (en) Manufacturing method of semiconductor device
US8227851B2 (en) Semiconductor device
JP5475947B2 (ja) 紙及び半導体装置
US9130051B2 (en) Semiconductor device including semiconductor layer over insulating layer and manufacturing method thereof
JP5063066B2 (ja) 半導体装置の作製方法
JP5297584B2 (ja) 半導体装置、半導体装置を用いた温度センサー及び半導体装置の作製方法
CN101233531B (zh) 半导体装置的制造方法
JP2007013943A (ja) 半導体装置
JP2007043121A (ja) 半導体装置の作製方法
JP4974621B2 (ja) 半導体装置及びその作製方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

A107 Divisional application of patent
AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

E601 Decision to refuse application
E801 Decision on dismissal of amendment
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

PE0801 Dismissal of amendment

St.27 status event code: A-2-2-P10-P12-nap-PE0801

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
J201 Request for trial against refusal decision
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20180328

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20190328

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20210429

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20210429

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000