TWI407508B - 半導體裝置及半導體裝置的製造方法 - Google Patents

半導體裝置及半導體裝置的製造方法 Download PDF

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Publication number
TWI407508B
TWI407508B TW096122935A TW96122935A TWI407508B TW I407508 B TWI407508 B TW I407508B TW 096122935 A TW096122935 A TW 096122935A TW 96122935 A TW96122935 A TW 96122935A TW I407508 B TWI407508 B TW I407508B
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TW
Taiwan
Prior art keywords
layer
semiconductor device
substrate
conductive layer
antenna
Prior art date
Application number
TW096122935A
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English (en)
Chinese (zh)
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TW200814191A (en
Inventor
道前芳隆
青木智幸
高橋秀和
山田大幹
杉山榮二
荻田香
楠本直人
Original Assignee
半導體能源研究所股份有限公司
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Publication of TW200814191A publication Critical patent/TW200814191A/zh
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Publication of TWI407508B publication Critical patent/TWI407508B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/699—Insulating or insulated package substrates; Interposers; Redistribution layers for flat cards, e.g. credit cards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H10W44/248—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for antennas

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  • Thin Film Transistor (AREA)
  • Credit Cards Or The Like (AREA)
TW096122935A 2006-06-26 2007-06-25 半導體裝置及半導體裝置的製造方法 TWI407508B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006175611A JP5204959B2 (ja) 2006-06-26 2006-06-26 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
TW200814191A TW200814191A (en) 2008-03-16
TWI407508B true TWI407508B (zh) 2013-09-01

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TW096122935A TWI407508B (zh) 2006-06-26 2007-06-25 半導體裝置及半導體裝置的製造方法

Country Status (4)

Country Link
US (4) US7851886B2 (enExample)
JP (1) JP5204959B2 (enExample)
KR (2) KR101517525B1 (enExample)
TW (1) TWI407508B (enExample)

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JP5204959B2 (ja) 2006-06-26 2013-06-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP6065848B2 (ja) 2014-01-07 2017-01-25 株式会社Sumco 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法
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JP6419132B2 (ja) * 2016-11-22 2018-11-07 東洋アルミエコープロダクツ株式会社 パルプモールド構造体の製造方法及びパルプモールド構造体
US11522234B2 (en) 2017-09-06 2022-12-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, battery unit, and battery module
CN110082976B (zh) * 2019-05-14 2022-08-02 上海天马微电子有限公司 显示模组和显示装置
WO2021171986A1 (ja) * 2020-02-26 2021-09-02 昭和電工株式会社 ドライエッチング方法、半導体素子の製造方法、及びクリーニング方法
KR102308784B1 (ko) * 2020-02-28 2021-10-01 한양대학교 산학협력단 텔루륨 산화물 및 이를 채널층으로 구비하는 박막트랜지스터
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WO2024034807A1 (ko) * 2022-08-11 2024-02-15 포항공과대학교 산학협력단 비정질 텔루륨 옥사이드를 포함하는 반도체, 그를 포함하는 박막트랜지스터 및 그의 제조방법

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Also Published As

Publication number Publication date
TW200814191A (en) 2008-03-16
KR101517943B1 (ko) 2015-05-06
US8432018B2 (en) 2013-04-30
US20130228885A1 (en) 2013-09-05
JP5204959B2 (ja) 2013-06-05
US20070296037A1 (en) 2007-12-27
US7851886B2 (en) 2010-12-14
KR20070122395A (ko) 2007-12-31
KR101517525B1 (ko) 2015-05-04
US8648439B2 (en) 2014-02-11
US20120080810A1 (en) 2012-04-05
US8039353B2 (en) 2011-10-18
US20110039373A1 (en) 2011-02-17
JP2008004893A (ja) 2008-01-10
KR20130083880A (ko) 2013-07-23

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