TWI407508B - 半導體裝置及半導體裝置的製造方法 - Google Patents

半導體裝置及半導體裝置的製造方法 Download PDF

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Publication number
TWI407508B
TWI407508B TW096122935A TW96122935A TWI407508B TW I407508 B TWI407508 B TW I407508B TW 096122935 A TW096122935 A TW 096122935A TW 96122935 A TW96122935 A TW 96122935A TW I407508 B TWI407508 B TW I407508B
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TW
Taiwan
Prior art keywords
layer
semiconductor device
substrate
conductive layer
antenna
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Application number
TW096122935A
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English (en)
Chinese (zh)
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TW200814191A (en
Inventor
道前芳隆
青木智幸
高橋秀和
山田大幹
杉山榮二
荻田香
楠本直人
Original Assignee
半導體能源研究所股份有限公司
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Publication of TW200814191A publication Critical patent/TW200814191A/zh
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Publication of TWI407508B publication Critical patent/TWI407508B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49855—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers for flat-cards, e.g. credit cards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Credit Cards Or The Like (AREA)
TW096122935A 2006-06-26 2007-06-25 半導體裝置及半導體裝置的製造方法 TWI407508B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006175611A JP5204959B2 (ja) 2006-06-26 2006-06-26 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
TW200814191A TW200814191A (en) 2008-03-16
TWI407508B true TWI407508B (zh) 2013-09-01

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TW096122935A TWI407508B (zh) 2006-06-26 2007-06-25 半導體裝置及半導體裝置的製造方法

Country Status (4)

Country Link
US (4) US7851886B2 (enExample)
JP (1) JP5204959B2 (enExample)
KR (2) KR101517525B1 (enExample)
TW (1) TWI407508B (enExample)

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US20070183184A1 (en) * 2006-02-03 2007-08-09 Semiconductor Energy Laboratory Ltd. Apparatus and method for manufacturing semiconductor device
JP5029605B2 (ja) * 2006-04-03 2012-09-19 パナソニック株式会社 アンテナ内蔵半導体メモリモジュール
JP5204959B2 (ja) 2006-06-26 2013-06-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN102156901B (zh) * 2006-06-26 2013-05-08 株式会社半导体能源研究所 包括半导体器件的纸及具有该纸的物品
WO2009131132A1 (en) * 2008-04-25 2009-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
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US8441007B2 (en) * 2008-12-25 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
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KR101823500B1 (ko) * 2011-07-11 2018-01-31 삼성전자주식회사 상변화 메모리 장치의 제조 방법
TWI453677B (zh) * 2011-12-01 2014-09-21 Mutual Pak Technology Co Ltd 射頻識別標籤與具有其之衣物
US8763912B1 (en) * 2013-03-29 2014-07-01 Identive Group, Inc. Dual interface module and dual interface card having a dual interface module
US20150138699A1 (en) 2013-11-15 2015-05-21 Semiconductor Energy Laboratory Co., Ltd. Electronic device
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US9184143B2 (en) * 2013-12-05 2015-11-10 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device with bump adjustment and manufacturing method thereof
JP6065848B2 (ja) 2014-01-07 2017-01-25 株式会社Sumco 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法
US10586954B2 (en) 2014-05-23 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Electronic device including secondary battery
JP6419132B2 (ja) * 2016-11-22 2018-11-07 東洋アルミエコープロダクツ株式会社 パルプモールド構造体の製造方法及びパルプモールド構造体
US11522234B2 (en) 2017-09-06 2022-12-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, battery unit, and battery module
CN110082976B (zh) * 2019-05-14 2022-08-02 上海天马微电子有限公司 显示模组和显示装置
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KR102308784B1 (ko) * 2020-02-28 2021-10-01 한양대학교 산학협력단 텔루륨 산화물 및 이를 채널층으로 구비하는 박막트랜지스터
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Also Published As

Publication number Publication date
US20070296037A1 (en) 2007-12-27
KR20130083880A (ko) 2013-07-23
KR101517525B1 (ko) 2015-05-04
JP2008004893A (ja) 2008-01-10
KR20070122395A (ko) 2007-12-31
US8039353B2 (en) 2011-10-18
TW200814191A (en) 2008-03-16
JP5204959B2 (ja) 2013-06-05
US8432018B2 (en) 2013-04-30
US20120080810A1 (en) 2012-04-05
US20110039373A1 (en) 2011-02-17
US8648439B2 (en) 2014-02-11
KR101517943B1 (ko) 2015-05-06
US20130228885A1 (en) 2013-09-05
US7851886B2 (en) 2010-12-14

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