KR101494935B1 - 메사 스텝들을 포함하는 버퍼층들 및 메사 구조들을 가지는 전력 반도체 장치들 - Google Patents

메사 스텝들을 포함하는 버퍼층들 및 메사 구조들을 가지는 전력 반도체 장치들 Download PDF

Info

Publication number
KR101494935B1
KR101494935B1 KR20107010197A KR20107010197A KR101494935B1 KR 101494935 B1 KR101494935 B1 KR 101494935B1 KR 20107010197 A KR20107010197 A KR 20107010197A KR 20107010197 A KR20107010197 A KR 20107010197A KR 101494935 B1 KR101494935 B1 KR 101494935B1
Authority
KR
South Korea
Prior art keywords
layer
mesa
conductivity type
buffer layer
doping concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR20107010197A
Other languages
English (en)
Korean (ko)
Other versions
KR20100085971A (ko
Inventor
칭츈 쟝
아난트 케이 아가르왈
Original Assignee
크리,인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 크리,인코포레이티드 filed Critical 크리,인코포레이티드
Publication of KR20100085971A publication Critical patent/KR20100085971A/ko
Application granted granted Critical
Publication of KR101494935B1 publication Critical patent/KR101494935B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/01—Manufacture or treatment
    • H10D18/031—Manufacture or treatment of lateral or planar thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
KR20107010197A 2007-11-09 2008-09-08 메사 스텝들을 포함하는 버퍼층들 및 메사 구조들을 가지는 전력 반도체 장치들 Active KR101494935B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US98669407P 2007-11-09 2007-11-09
US60/986,694 2007-11-09
PCT/US2008/010538 WO2009061340A1 (en) 2007-11-09 2008-09-08 Power semiconductor devices with mesa structures and buffer layers including mesa steps

Publications (2)

Publication Number Publication Date
KR20100085971A KR20100085971A (ko) 2010-07-29
KR101494935B1 true KR101494935B1 (ko) 2015-02-23

Family

ID=40032742

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20107010197A Active KR101494935B1 (ko) 2007-11-09 2008-09-08 메사 스텝들을 포함하는 버퍼층들 및 메사 구조들을 가지는 전력 반도체 장치들

Country Status (6)

Country Link
US (1) US7838377B2 (https=)
EP (1) EP2208230B1 (https=)
JP (1) JP5372002B2 (https=)
KR (1) KR101494935B1 (https=)
CN (1) CN101855726B (https=)
WO (1) WO2009061340A1 (https=)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
US7728402B2 (en) * 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
EP2631951B1 (en) 2006-08-17 2017-10-11 Cree, Inc. High power insulated gate bipolar transistors
US8835987B2 (en) * 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US9640609B2 (en) * 2008-02-26 2017-05-02 Cree, Inc. Double guard ring edge termination for silicon carbide devices
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8097919B2 (en) * 2008-08-11 2012-01-17 Cree, Inc. Mesa termination structures for power semiconductor devices including mesa step buffers
US8497552B2 (en) 2008-12-01 2013-07-30 Cree, Inc. Semiconductor devices with current shifting regions and related methods
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8637386B2 (en) * 2009-05-12 2014-01-28 Cree, Inc. Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
US8629509B2 (en) * 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8541787B2 (en) * 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
US20110084332A1 (en) * 2009-10-08 2011-04-14 Vishay General Semiconductor, Llc. Trench termination structure
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
SE537101C2 (sv) 2010-03-30 2015-01-07 Fairchild Semiconductor Halvledarkomponent och förfarande för utformning av en struktur i ett målsubstrat för tillverkning av en halvledarkomponent
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
US8552435B2 (en) 2010-07-21 2013-10-08 Cree, Inc. Electronic device structure including a buffer layer on a base layer
US8809904B2 (en) * 2010-07-26 2014-08-19 Cree, Inc. Electronic device structure with a semiconductor ledge layer for surface passivation
US8803277B2 (en) 2011-02-10 2014-08-12 Cree, Inc. Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same
US9318623B2 (en) * 2011-04-05 2016-04-19 Cree, Inc. Recessed termination structures and methods of fabricating electronic devices including recessed termination structures
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9337268B2 (en) 2011-05-16 2016-05-10 Cree, Inc. SiC devices with high blocking voltage terminated by a negative bevel
US9349797B2 (en) 2011-05-16 2016-05-24 Cree, Inc. SiC devices with high blocking voltage terminated by a negative bevel
CN102244003A (zh) * 2011-06-20 2011-11-16 中国科学院微电子研究所 一种InP HBT器件侧墙的制备方法
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
WO2013036370A1 (en) 2011-09-11 2013-03-14 Cree, Inc. High current density power module comprising transistors with improved layout
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
WO2013107508A1 (en) 2012-01-18 2013-07-25 Fairchild Semiconductor Corporation Bipolar junction transistor with spacer layer and method of manufacturing the same
CN103378138B (zh) * 2012-04-18 2016-12-14 朱恩均 双极晶体管及其制作方法
US9425265B2 (en) 2013-08-16 2016-08-23 Cree, Inc. Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure
CN105957886B (zh) * 2016-06-28 2019-05-14 中国科学院微电子研究所 一种碳化硅双极结型晶体管
CN105977287B (zh) * 2016-07-25 2018-11-09 电子科技大学 一种碳化硅双极结型晶体管
CN107482057B (zh) * 2017-06-29 2019-04-09 厦门市三安集成电路有限公司 多重外延层的共射共基晶体管
JP6740986B2 (ja) * 2017-08-31 2020-08-19 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US10573516B2 (en) * 2017-12-06 2020-02-25 QROMIS, Inc. Methods for integrated devices on an engineered substrate
JP2020184580A (ja) * 2019-05-08 2020-11-12 株式会社村田製作所 半導体装置
CN112768438B (zh) * 2019-11-05 2022-07-15 深圳第三代半导体研究院 一种压接式功率模块及其制备方法
CN113809071B (zh) * 2021-07-26 2024-03-29 浙江芯国半导体有限公司 包含肖特基二极管的电路及相关应用
CN115172471A (zh) * 2022-06-28 2022-10-11 东莞市中镓半导体科技有限公司 高耐压垂直型二极管及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03225870A (ja) * 1990-01-31 1991-10-04 Toshiba Corp ヘテロ接合バイポーラトランジスタの製造方法
JPH0492434A (ja) * 1990-08-08 1992-03-25 Sumitomo Electric Ind Ltd ヘテロ接合バイポーラトランジスタの製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4927772A (en) * 1989-05-30 1990-05-22 General Electric Company Method of making high breakdown voltage semiconductor device
TW286435B (https=) 1994-07-27 1996-09-21 Siemens Ag
US5967795A (en) 1995-08-30 1999-10-19 Asea Brown Boveri Ab SiC semiconductor device comprising a pn junction with a voltage absorbing edge
JP3225870B2 (ja) 1996-12-05 2001-11-05 トヨタ車体株式会社 ルーフスポイラの取付構造
SE9700156D0 (sv) * 1997-01-21 1997-01-21 Abb Research Ltd Junction termination for Si C Schottky diode
WO2000042662A1 (de) * 1999-01-12 2000-07-20 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Leistungshalbleiterbauelement mit mesa-randabschluss
JP2001035857A (ja) * 1999-07-21 2001-02-09 Nec Corp 化合物ヘテロバイポーラトランジスタおよびその製造方法
DE102004045768B4 (de) * 2004-09-21 2007-01-04 Infineon Technologies Ag Verfahren zur Herstellung eines Randabschlusses eines Halbleiterbauelements
JP4777699B2 (ja) 2005-06-13 2011-09-21 本田技研工業株式会社 バイポーラ型半導体装置およびその製造方法
US7304334B2 (en) * 2005-09-16 2007-12-04 Cree, Inc. Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same
JP2007103784A (ja) * 2005-10-06 2007-04-19 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタ
US7345310B2 (en) * 2005-12-22 2008-03-18 Cree, Inc. Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof
JP2007287782A (ja) * 2006-04-13 2007-11-01 Hitachi Ltd メサ型バイポーラトランジスタ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03225870A (ja) * 1990-01-31 1991-10-04 Toshiba Corp ヘテロ接合バイポーラトランジスタの製造方法
JPH0492434A (ja) * 1990-08-08 1992-03-25 Sumitomo Electric Ind Ltd ヘテロ接合バイポーラトランジスタの製造方法

Also Published As

Publication number Publication date
US7838377B2 (en) 2010-11-23
JP5372002B2 (ja) 2013-12-18
JP2011503871A (ja) 2011-01-27
WO2009061340A1 (en) 2009-05-14
CN101855726A (zh) 2010-10-06
KR20100085971A (ko) 2010-07-29
EP2208230B1 (en) 2015-10-21
US20090121319A1 (en) 2009-05-14
CN101855726B (zh) 2015-09-16
EP2208230A1 (en) 2010-07-21

Similar Documents

Publication Publication Date Title
KR101494935B1 (ko) 메사 스텝들을 포함하는 버퍼층들 및 메사 구조들을 가지는 전력 반도체 장치들
KR100937276B1 (ko) 반도체 디바이스 및 그 제조 방법
CN110036486B (zh) 具有栅极沟槽和掩埋的终端结构的功率半导体器件及相关方法
US8460977B2 (en) Mesa termination structures for power semiconductor devices and methods of forming power semiconductor devices with mesa termination structures
AU2007240996B2 (en) Junction barrier Schottky rectifiers and methods of making thereof
KR101630895B1 (ko) 전류 시프팅 영역들을 갖는 반도체 장치들 및 관련 방법들
KR101722811B1 (ko) 낮은 소스 저항을 갖는 전계 효과 트랜지스터 장치
CN112397574A (zh) 具有沟槽栅极的碳化硅器件
WO2019053199A1 (en) CONCEPT FOR SILICON CARBIDE POWER DEVICES
CN111164759B (zh) 具有高电流容量的馈线设计
WO2013119548A1 (en) Sic devices with high blocking voltage terminated by a negative bevel

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20180118

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20190116

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20200130

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 12