KR101475133B1 - 소결용 Ｓｂ-Ｔｅ 계 합금 분말 및 그 분말의 제조 방법 그리고 소결체 타겟 - Google Patents

소결용 Ｓｂ-Ｔｅ 계 합금 분말 및 그 분말의 제조 방법 그리고 소결체 타겟 Download PDF

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KR101475133B1
KR101475133B1 KR1020127034295A KR20127034295A KR101475133B1 KR 101475133 B1 KR101475133 B1 KR 101475133B1 KR 1020127034295 A KR1020127034295 A KR 1020127034295A KR 20127034295 A KR20127034295 A KR 20127034295A KR 101475133 B1 KR101475133 B1 KR 101475133B1
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South Korea
Prior art keywords
powder
target
average particle
alloy
sputtering
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KR1020127034295A
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English (en)
Korean (ko)
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KR20130007676A (ko
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히데유키 다카하시
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제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤
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Publication of KR20130007676A publication Critical patent/KR20130007676A/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/547—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on sulfides or selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40—Metallic constituents or additives not added as binding phase
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40—Metallic constituents or additives not added as binding phase
    • C04B2235/408—Noble metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/963—Surface properties, e.g. surface roughness

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
KR1020127034295A 2008-02-26 2009-02-16 소결용 Ｓｂ-Ｔｅ 계 합금 분말 및 그 분말의 제조 방법 그리고 소결체 타겟 KR101475133B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008044405 2008-02-26
JPJP-P-2008-044405 2008-02-26
PCT/JP2009/052511 WO2009107498A1 (ja) 2008-02-26 2009-02-16 焼結用Ｓｂ－Ｔｅ系合金粉末及び同粉末の製造方法並びに焼結体ターゲット

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020097023902A Division KR20090130315A (ko) 2008-02-26 2009-02-16 소결용 Ｓｂ-Ｔｅ 계 합금 분말 및 그 분말의 제조 방법 그리고 소결체 타겟

Publications (2)

Publication Number Publication Date
KR20130007676A KR20130007676A (ko) 2013-01-18
KR101475133B1 true KR101475133B1 (ko) 2014-12-22

Family

ID=41015898

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020127034295A KR101475133B1 (ko) 2008-02-26 2009-02-16 소결용 Ｓｂ-Ｔｅ 계 합금 분말 및 그 분말의 제조 방법 그리고 소결체 타겟
KR1020097023902A KR20090130315A (ko) 2008-02-26 2009-02-16 소결용 Ｓｂ-Ｔｅ 계 합금 분말 및 그 분말의 제조 방법 그리고 소결체 타겟

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020097023902A KR20090130315A (ko) 2008-02-26 2009-02-16 소결용 Ｓｂ-Ｔｅ 계 합금 분말 및 그 분말의 제조 방법 그리고 소결체 타겟

Country Status (4)

Country Link
JP (1) JP5496078B2 (ja)
KR (2) KR101475133B1 (ja)
TW (1) TWI481725B (ja)
WO (1) WO2009107498A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201604727UA (en) 2014-03-25 2016-07-28 Jx Nippon Mining & Metals Corp Sputtering target of sintered sb-te-based alloy
CN112808994A (zh) * 2019-11-15 2021-05-18 南京理工大学 锑纳米片的制备方法
CN112719278A (zh) * 2020-12-29 2021-04-30 先导薄膜材料（广东）有限公司 锗锑碲合金粉体的制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004162109A (ja) * 2002-11-12 2004-06-10 Nikko Materials Co Ltd スパッタリングターゲット及び同製造用粉末
KR20070087144A (ko) * 2005-01-18 2007-08-27 닛코 킨조쿠 가부시키가이샤 소결용 Ｓｂ-Ｔｅ 계 합금 분말 및 이 분말을 소결하여얻은 소결체 스퍼터링 타겟 그리고 소결용 Ｓｂ-Ｔｅ 계합금 분말의 제조 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6213569A (ja) * 1985-07-10 1987-01-22 Mitsubishi Metal Corp ＴｅまたはＴｅ合金製スパツタリング用焼結タ−ゲツト
JPS63293102A (ja) * 1987-05-26 1988-11-30 Mitsubishi Metal Corp 高強度および高靭性を有するＦｅ系焼結合金部材の製造法
JPH0570937A (ja) * 1991-04-08 1993-03-23 Mitsubishi Materials Corp 光デイスク用スパツタリングタ−ゲツト及びその製造方法
JPH059509A (ja) * 1991-07-02 1993-01-19 Koji Hayashi 高合金工具鋼焼結体及びその製造方法
JP2989169B2 (ja) * 1997-08-08 1999-12-13 日立金属株式会社 Ｎｉ−Ａｌ系金属間化合物ターゲットおよびその製造方法ならびに磁気記録媒体
JP2007046165A (ja) * 2002-02-25 2007-02-22 Nikko Kinzoku Kk 相変化型メモリー用スパッタリングターゲットの製造方法
JP2003264318A (ja) * 2002-03-07 2003-09-19 Kyocera Corp 熱電変換素子の製造方法
JP4835973B2 (ja) * 2004-12-13 2011-12-14 日立金属株式会社 高融点金属系粉末の製造方法およびターゲット材の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004162109A (ja) * 2002-11-12 2004-06-10 Nikko Materials Co Ltd スパッタリングターゲット及び同製造用粉末
KR20070087144A (ko) * 2005-01-18 2007-08-27 닛코 킨조쿠 가부시키가이샤 소결용 Ｓｂ-Ｔｅ 계 합금 분말 및 이 분말을 소결하여얻은 소결체 스퍼터링 타겟 그리고 소결용 Ｓｂ-Ｔｅ 계합금 분말의 제조 방법

Also Published As

Publication number Publication date
TWI481725B (zh) 2015-04-21
KR20090130315A (ko) 2009-12-22
TW200946692A (en) 2009-11-16
KR20130007676A (ko) 2013-01-18
JP5496078B2 (ja) 2014-05-21
JPWO2009107498A1 (ja) 2011-06-30
WO2009107498A1 (ja) 2009-09-03

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