KR101444479B1 - 광전자 장치용 하우징, 광전자 장치 및 광전자 장치용 하우징 제조 방법 - Google Patents

광전자 장치용 하우징, 광전자 장치 및 광전자 장치용 하우징 제조 방법 Download PDF

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KR101444479B1
KR101444479B1 KR1020097006101A KR20097006101A KR101444479B1 KR 101444479 B1 KR101444479 B1 KR 101444479B1 KR 1020097006101 A KR1020097006101 A KR 1020097006101A KR 20097006101 A KR20097006101 A KR 20097006101A KR 101444479 B1 KR101444479 B1 KR 101444479B1
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plastic
plastic body
plastic element
functional area
housing
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KR20090075806A (ko
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게오르그 보그너
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오스람 옵토 세미컨덕터스 게엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers

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KR1020097006101A 2006-09-29 2007-09-27 광전자 장치용 하우징, 광전자 장치 및 광전자 장치용 하우징 제조 방법 Active KR101444479B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006046678A DE102006046678A1 (de) 2006-09-29 2006-09-29 Gehäuse für ein optoelektronisches Bauelement, optoelektronisches Bauelement und Verfahren zum Herstellen eines Gehäuses für ein optoelektronisches Bauelement
DE102006046678.0 2006-09-29
PCT/DE2007/001750 WO2008040324A1 (de) 2006-09-29 2007-09-27 Gehäuse für ein optoelektronisches bauelement, optoelektronisches bauelement und verfahren zum herstellen eines gehäuses für ein optoelektronisches bauelement

Publications (2)

Publication Number Publication Date
KR20090075806A KR20090075806A (ko) 2009-07-09
KR101444479B1 true KR101444479B1 (ko) 2014-09-25

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KR1020097006101A Active KR101444479B1 (ko) 2006-09-29 2007-09-27 광전자 장치용 하우징, 광전자 장치 및 광전자 장치용 하우징 제조 방법

Country Status (8)

Country Link
US (2) US8071987B2 (enExample)
EP (1) EP2057695B1 (enExample)
JP (1) JP5340157B2 (enExample)
KR (1) KR101444479B1 (enExample)
CN (1) CN101523621B (enExample)
DE (1) DE102006046678A1 (enExample)
TW (1) TWI347679B (enExample)
WO (1) WO2008040324A1 (enExample)

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DE102009055786A1 (de) * 2009-11-25 2011-05-26 Osram Opto Semiconductors Gmbh Gehäuse, optoelektronisches Bauteil und Verfahren zur Herstellung eines Gehäuses
DE102009058421A1 (de) * 2009-12-16 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil
DE102010011428A1 (de) 2010-03-15 2011-09-15 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102010029368A1 (de) * 2010-05-27 2011-12-01 Osram Opto Semiconductors Gmbh Elektronische Anordnung und Verfahren zum Herstellen einer elektronischen Anordnung
DE102010023815A1 (de) * 2010-06-15 2011-12-15 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelements
DE102010025319B4 (de) * 2010-06-28 2022-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines oberflächenmontierbaren Halbleiterbauelements und oberflächenmontierbare Halbleiterbauelemente
JP5488310B2 (ja) * 2010-07-30 2014-05-14 市光工業株式会社 車両用灯具の半導体型光源の光源ユニット、車両用灯具
DE102010054591B4 (de) * 2010-12-15 2023-03-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Gehäuse und Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Bauelement
KR101825473B1 (ko) * 2011-02-16 2018-02-05 삼성전자 주식회사 발광소자 패키지 및 그 제조방법
CN103171080A (zh) * 2011-12-21 2013-06-26 顺德工业股份有限公司 发光装置封装支架的制造方法
US9735198B2 (en) 2012-03-30 2017-08-15 Cree, Inc. Substrate based light emitter devices, components, and related methods
US10134961B2 (en) * 2012-03-30 2018-11-20 Cree, Inc. Submount based surface mount device (SMD) light emitter components and methods
US10222032B2 (en) 2012-03-30 2019-03-05 Cree, Inc. Light emitter components and methods having improved electrical contacts
CN102779926B (zh) * 2012-08-02 2015-01-28 慧明光电(深圳)有限公司 高对比度的防水表贴led灯
JP6392654B2 (ja) * 2014-02-04 2018-09-19 エイブリック株式会社 光センサ装置
DE102014106882A1 (de) * 2014-05-15 2015-11-19 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP6483800B2 (ja) * 2015-02-25 2019-03-13 京セラ株式会社 発光素子搭載用パッケージ、発光装置および発光モジュール
JP2017032471A (ja) * 2015-08-05 2017-02-09 株式会社デンソー 光センサ
US9865779B2 (en) 2015-09-30 2018-01-09 Nichia Corporation Methods of manufacturing the package and light-emitting device
JP6728764B2 (ja) * 2016-02-26 2020-07-22 日亜化学工業株式会社 発光装置及びそれを用いた照明装置
CN105575921A (zh) * 2016-02-29 2016-05-11 卓广实业（上海）有限公司 垂直导热封装结构的ic元件
CN111107970B (zh) * 2017-09-19 2022-08-26 亮锐控股有限公司 发光装置及其制造方法
JP6658808B2 (ja) * 2017-12-25 2020-03-04 日亜化学工業株式会社 発光装置および発光装置の製造方法
JP7212241B2 (ja) 2018-06-21 2023-01-25 日亜化学工業株式会社 発光装置

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US20050245018A1 (en) 2001-10-31 2005-11-03 Georg Bogner Optoelectronic component
US20060060867A1 (en) 2004-09-09 2006-03-23 Toyoda Gosei Co., Ltd. Light emitting device
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JP4066620B2 (ja) * 2000-07-21 2008-03-26 日亜化学工業株式会社 発光素子、および発光素子を配置した表示装置ならびに表示装置の製造方法
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US20030141510A1 (en) 2000-04-26 2003-07-31 Osram Opto Semiconductors Gmbh Radiation emitting semiconductor component with luminescent conversion element
US20050245018A1 (en) 2001-10-31 2005-11-03 Georg Bogner Optoelectronic component
US20060060867A1 (en) 2004-09-09 2006-03-23 Toyoda Gosei Co., Ltd. Light emitting device
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Also Published As

Publication number Publication date
US20120032362A1 (en) 2012-02-09
KR20090075806A (ko) 2009-07-09
US20090218584A1 (en) 2009-09-03
CN101523621B (zh) 2012-01-18
WO2008040324A1 (de) 2008-04-10
JP2010505254A (ja) 2010-02-18
DE102006046678A1 (de) 2008-04-03
EP2057695B1 (de) 2018-08-15
JP5340157B2 (ja) 2013-11-13
CN101523621A (zh) 2009-09-02
EP2057695A1 (de) 2009-05-13
US8476114B2 (en) 2013-07-02
TWI347679B (en) 2011-08-21
US8071987B2 (en) 2011-12-06
TW200830560A (en) 2008-07-16

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