CN101523621B - 光电子器件的壳体、光电子器件以及用于制造光电子器件的壳体的方法 - Google Patents

光电子器件的壳体、光电子器件以及用于制造光电子器件的壳体的方法 Download PDF

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Publication number
CN101523621B
CN101523621B CN2007800362142A CN200780036214A CN101523621B CN 101523621 B CN101523621 B CN 101523621B CN 2007800362142 A CN2007800362142 A CN 2007800362142A CN 200780036214 A CN200780036214 A CN 200780036214A CN 101523621 B CN101523621 B CN 101523621B
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plastic
based body
plastic based
front side
optical function
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CN2007800362142A
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Chinese (zh)
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CN101523621A (zh
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乔治·伯格纳
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/50Encapsulations or containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/40Optical elements or arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers

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CN2007800362142A 2006-09-29 2007-09-27 光电子器件的壳体、光电子器件以及用于制造光电子器件的壳体的方法 Active CN101523621B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006046678A DE102006046678A1 (de) 2006-09-29 2006-09-29 Gehäuse für ein optoelektronisches Bauelement, optoelektronisches Bauelement und Verfahren zum Herstellen eines Gehäuses für ein optoelektronisches Bauelement
DE102006046678.0 2006-09-29
PCT/DE2007/001750 WO2008040324A1 (de) 2006-09-29 2007-09-27 Gehäuse für ein optoelektronisches bauelement, optoelektronisches bauelement und verfahren zum herstellen eines gehäuses für ein optoelektronisches bauelement

Publications (2)

Publication Number Publication Date
CN101523621A CN101523621A (zh) 2009-09-02
CN101523621B true CN101523621B (zh) 2012-01-18

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CN2007800362142A Active CN101523621B (zh) 2006-09-29 2007-09-27 光电子器件的壳体、光电子器件以及用于制造光电子器件的壳体的方法

Country Status (8)

Country Link
US (2) US8071987B2 (enExample)
EP (1) EP2057695B1 (enExample)
JP (1) JP5340157B2 (enExample)
KR (1) KR101444479B1 (enExample)
CN (1) CN101523621B (enExample)
DE (1) DE102006046678A1 (enExample)
TW (1) TWI347679B (enExample)
WO (1) WO2008040324A1 (enExample)

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DE102009055786A1 (de) * 2009-11-25 2011-05-26 Osram Opto Semiconductors Gmbh Gehäuse, optoelektronisches Bauteil und Verfahren zur Herstellung eines Gehäuses
DE102009058421A1 (de) * 2009-12-16 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil
DE102010011428A1 (de) 2010-03-15 2011-09-15 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102010029368A1 (de) * 2010-05-27 2011-12-01 Osram Opto Semiconductors Gmbh Elektronische Anordnung und Verfahren zum Herstellen einer elektronischen Anordnung
DE102010023815A1 (de) * 2010-06-15 2011-12-15 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelements
DE102010025319B4 (de) * 2010-06-28 2022-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines oberflächenmontierbaren Halbleiterbauelements und oberflächenmontierbare Halbleiterbauelemente
JP5488310B2 (ja) * 2010-07-30 2014-05-14 市光工業株式会社 車両用灯具の半導体型光源の光源ユニット、車両用灯具
DE102010054591B4 (de) * 2010-12-15 2023-03-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Gehäuse und Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Bauelement
KR101825473B1 (ko) * 2011-02-16 2018-02-05 삼성전자 주식회사 발광소자 패키지 및 그 제조방법
CN103171080A (zh) * 2011-12-21 2013-06-26 顺德工业股份有限公司 发光装置封装支架的制造方法
US9735198B2 (en) 2012-03-30 2017-08-15 Cree, Inc. Substrate based light emitter devices, components, and related methods
US10134961B2 (en) * 2012-03-30 2018-11-20 Cree, Inc. Submount based surface mount device (SMD) light emitter components and methods
US10222032B2 (en) 2012-03-30 2019-03-05 Cree, Inc. Light emitter components and methods having improved electrical contacts
CN102779926B (zh) * 2012-08-02 2015-01-28 慧明光电(深圳)有限公司 高对比度的防水表贴led灯
JP6392654B2 (ja) * 2014-02-04 2018-09-19 エイブリック株式会社 光センサ装置
DE102014106882A1 (de) * 2014-05-15 2015-11-19 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP6483800B2 (ja) * 2015-02-25 2019-03-13 京セラ株式会社 発光素子搭載用パッケージ、発光装置および発光モジュール
JP2017032471A (ja) * 2015-08-05 2017-02-09 株式会社デンソー 光センサ
US9865779B2 (en) 2015-09-30 2018-01-09 Nichia Corporation Methods of manufacturing the package and light-emitting device
JP6728764B2 (ja) * 2016-02-26 2020-07-22 日亜化学工業株式会社 発光装置及びそれを用いた照明装置
CN105575921A (zh) * 2016-02-29 2016-05-11 卓广实业(上海)有限公司 垂直导热封装结构的ic元件
CN111107970B (zh) * 2017-09-19 2022-08-26 亮锐控股有限公司 发光装置及其制造方法
JP6658808B2 (ja) * 2017-12-25 2020-03-04 日亜化学工業株式会社 発光装置および発光装置の製造方法
JP7212241B2 (ja) 2018-06-21 2023-01-25 日亜化学工業株式会社 発光装置

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EP1022787B2 (de) 1989-05-31 2012-07-11 OSRAM Opto Semiconductors GmbH Verfahren zum Herstellen eines oberflächenmontierbaren Opto-Bauelements und oberflächenmontierbares Opto-Bauelement
US5291038A (en) 1990-12-19 1994-03-01 Sharp Kabushiki Kaisha Reflective type photointerrupter
JP2714272B2 (ja) * 1991-06-04 1998-02-16 シャープ株式会社 電子部品
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JP4066620B2 (ja) * 2000-07-21 2008-03-26 日亜化学工業株式会社 発光素子、および発光素子を配置した表示装置ならびに表示装置の製造方法
DE10117889A1 (de) * 2001-04-10 2002-10-24 Osram Opto Semiconductors Gmbh Leiterrahmen und Gehäuse für ein strahlungsemittierendes Bauelement, strahlungsemittierendes Bauelement sowie Verfahren zu dessen Herstellung
JP3844196B2 (ja) * 2001-06-12 2006-11-08 シチズン電子株式会社 発光ダイオードの製造方法
JPWO2003034508A1 (ja) * 2001-10-12 2005-02-03 日亜化学工業株式会社 発光装置及びその製造方法
DE10153259A1 (de) * 2001-10-31 2003-05-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP4603368B2 (ja) * 2003-02-28 2010-12-22 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 構造化された金属被覆を施されたパッケージボディを有するオプトエレクトロニクス素子、この種の素子を製作する方法、およびプラスチックを含むボディに、構造化された金属被覆を施す方法
TW200427111A (en) 2003-03-12 2004-12-01 Shinetsu Chemical Co Material for coating/protecting light-emitting semiconductor and the light-emitting semiconductor device
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Publication number Publication date
US20120032362A1 (en) 2012-02-09
KR20090075806A (ko) 2009-07-09
US20090218584A1 (en) 2009-09-03
WO2008040324A1 (de) 2008-04-10
JP2010505254A (ja) 2010-02-18
DE102006046678A1 (de) 2008-04-03
EP2057695B1 (de) 2018-08-15
JP5340157B2 (ja) 2013-11-13
CN101523621A (zh) 2009-09-02
EP2057695A1 (de) 2009-05-13
US8476114B2 (en) 2013-07-02
KR101444479B1 (ko) 2014-09-25
TWI347679B (en) 2011-08-21
US8071987B2 (en) 2011-12-06
TW200830560A (en) 2008-07-16

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