JP5340157B2 - オプトエレクロニクスデバイスのためのハウジング、オプトエレクトロニスクデバイスおよびオプトエレクロニクスデバイスのためのハウジングを製造する方法 - Google Patents

オプトエレクロニクスデバイスのためのハウジング、オプトエレクトロニスクデバイスおよびオプトエレクロニクスデバイスのためのハウジングを製造する方法 Download PDF

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JP5340157B2
JP5340157B2 JP2009529530A JP2009529530A JP5340157B2 JP 5340157 B2 JP5340157 B2 JP 5340157B2 JP 2009529530 A JP2009529530 A JP 2009529530A JP 2009529530 A JP2009529530 A JP 2009529530A JP 5340157 B2 JP5340157 B2 JP 5340157B2
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plastic
plastic substrate
substrate
housing
component
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JP2010505254A5 (enExample
JP2010505254A (ja
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ボーグナー ゲオルク
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
JP2009529530A 2006-09-29 2007-09-27 オプトエレクロニクスデバイスのためのハウジング、オプトエレクトロニスクデバイスおよびオプトエレクロニクスデバイスのためのハウジングを製造する方法 Active JP5340157B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006046678A DE102006046678A1 (de) 2006-09-29 2006-09-29 Gehäuse für ein optoelektronisches Bauelement, optoelektronisches Bauelement und Verfahren zum Herstellen eines Gehäuses für ein optoelektronisches Bauelement
DE102006046678.0 2006-09-29
PCT/DE2007/001750 WO2008040324A1 (de) 2006-09-29 2007-09-27 Gehäuse für ein optoelektronisches bauelement, optoelektronisches bauelement und verfahren zum herstellen eines gehäuses für ein optoelektronisches bauelement

Publications (3)

Publication Number Publication Date
JP2010505254A JP2010505254A (ja) 2010-02-18
JP2010505254A5 JP2010505254A5 (enExample) 2011-07-07
JP5340157B2 true JP5340157B2 (ja) 2013-11-13

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JP2009529530A Active JP5340157B2 (ja) 2006-09-29 2007-09-27 オプトエレクロニクスデバイスのためのハウジング、オプトエレクトロニスクデバイスおよびオプトエレクロニクスデバイスのためのハウジングを製造する方法

Country Status (8)

Country Link
US (2) US8071987B2 (enExample)
EP (1) EP2057695B1 (enExample)
JP (1) JP5340157B2 (enExample)
KR (1) KR101444479B1 (enExample)
CN (1) CN101523621B (enExample)
DE (1) DE102006046678A1 (enExample)
TW (1) TWI347679B (enExample)
WO (1) WO2008040324A1 (enExample)

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* Cited by examiner, † Cited by third party
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DE102009055786A1 (de) * 2009-11-25 2011-05-26 Osram Opto Semiconductors Gmbh Gehäuse, optoelektronisches Bauteil und Verfahren zur Herstellung eines Gehäuses
DE102009058421A1 (de) * 2009-12-16 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil
DE102010011428A1 (de) 2010-03-15 2011-09-15 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102010029368A1 (de) * 2010-05-27 2011-12-01 Osram Opto Semiconductors Gmbh Elektronische Anordnung und Verfahren zum Herstellen einer elektronischen Anordnung
DE102010023815A1 (de) * 2010-06-15 2011-12-15 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelements
DE102010025319B4 (de) * 2010-06-28 2022-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines oberflächenmontierbaren Halbleiterbauelements und oberflächenmontierbare Halbleiterbauelemente
JP5488310B2 (ja) * 2010-07-30 2014-05-14 市光工業株式会社 車両用灯具の半導体型光源の光源ユニット、車両用灯具
DE102010054591B4 (de) * 2010-12-15 2023-03-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Gehäuse und Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Bauelement
KR101825473B1 (ko) * 2011-02-16 2018-02-05 삼성전자 주식회사 발광소자 패키지 및 그 제조방법
CN103171080A (zh) * 2011-12-21 2013-06-26 顺德工业股份有限公司 发光装置封装支架的制造方法
US9735198B2 (en) 2012-03-30 2017-08-15 Cree, Inc. Substrate based light emitter devices, components, and related methods
US10134961B2 (en) * 2012-03-30 2018-11-20 Cree, Inc. Submount based surface mount device (SMD) light emitter components and methods
US10222032B2 (en) 2012-03-30 2019-03-05 Cree, Inc. Light emitter components and methods having improved electrical contacts
CN102779926B (zh) * 2012-08-02 2015-01-28 慧明光电(深圳)有限公司 高对比度的防水表贴led灯
JP6392654B2 (ja) * 2014-02-04 2018-09-19 エイブリック株式会社 光センサ装置
DE102014106882A1 (de) * 2014-05-15 2015-11-19 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP6483800B2 (ja) * 2015-02-25 2019-03-13 京セラ株式会社 発光素子搭載用パッケージ、発光装置および発光モジュール
JP2017032471A (ja) * 2015-08-05 2017-02-09 株式会社デンソー 光センサ
US9865779B2 (en) 2015-09-30 2018-01-09 Nichia Corporation Methods of manufacturing the package and light-emitting device
JP6728764B2 (ja) * 2016-02-26 2020-07-22 日亜化学工業株式会社 発光装置及びそれを用いた照明装置
CN105575921A (zh) * 2016-02-29 2016-05-11 卓广实业（上海）有限公司 垂直导热封装结构的ic元件
CN111107970B (zh) * 2017-09-19 2022-08-26 亮锐控股有限公司 发光装置及其制造方法
JP6658808B2 (ja) * 2017-12-25 2020-03-04 日亜化学工業株式会社 発光装置および発光装置の製造方法
JP7212241B2 (ja) 2018-06-21 2023-01-25 日亜化学工業株式会社 発光装置

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EP1022787B2 (de) 1989-05-31 2012-07-11 OSRAM Opto Semiconductors GmbH Verfahren zum Herstellen eines oberflächenmontierbaren Opto-Bauelements und oberflächenmontierbares Opto-Bauelement
US5291038A (en) 1990-12-19 1994-03-01 Sharp Kabushiki Kaisha Reflective type photointerrupter
JP2714272B2 (ja) * 1991-06-04 1998-02-16 シャープ株式会社 電子部品
EP0646971B1 (de) * 1993-09-30 1997-03-12 Siemens Aktiengesellschaft Zweipoliges SMT-Miniatur-Gehäuse für Halbleiterbauelemente und Verfahren zu dessen Herstellung
DE19638667C2 (de) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
EP1004145B1 (de) 1997-07-29 2005-06-01 Osram Opto Semiconductors GmbH Optoelektronisches bauelement
DE19829197C2 (de) * 1998-06-30 2002-06-20 Siemens Ag Strahlungsaussendendes und/oder -empfangendes Bauelement
JP2000101149A (ja) 1998-09-25 2000-04-07 Rohm Co Ltd 半導体発光素子
DE10020465A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement
JP4066620B2 (ja) * 2000-07-21 2008-03-26 日亜化学工業株式会社 発光素子、および発光素子を配置した表示装置ならびに表示装置の製造方法
DE10117889A1 (de) * 2001-04-10 2002-10-24 Osram Opto Semiconductors Gmbh Leiterrahmen und Gehäuse für ein strahlungsemittierendes Bauelement, strahlungsemittierendes Bauelement sowie Verfahren zu dessen Herstellung
JP3844196B2 (ja) * 2001-06-12 2006-11-08 シチズン電子株式会社 発光ダイオードの製造方法
JPWO2003034508A1 (ja) * 2001-10-12 2005-02-03 日亜化学工業株式会社 発光装置及びその製造方法
DE10153259A1 (de) * 2001-10-31 2003-05-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP4603368B2 (ja) * 2003-02-28 2010-12-22 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 構造化された金属被覆を施されたパッケージボディを有するオプトエレクトロニクス素子、この種の素子を製作する方法、およびプラスチックを含むボディに、構造化された金属被覆を施す方法
TW200427111A (en) 2003-03-12 2004-12-01 Shinetsu Chemical Co Material for coating/protecting light-emitting semiconductor and the light-emitting semiconductor device
WO2004101270A1 (ja) * 2003-05-14 2004-11-25 Toyo Seikan Kaisha, Ltd. 加飾されたプラスチック包装体及びその再生処理方法
JP4357886B2 (ja) 2003-06-30 2009-11-04 Ｔｄｋ株式会社 脱バインダ用治具および電子部品の製造方法
US20050196710A1 (en) * 2004-03-04 2005-09-08 Semiconductor Energy Laboratory Co., Ltd. Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television apparatus
JP4747726B2 (ja) 2004-09-09 2011-08-17 豊田合成株式会社 発光装置
DE102004045950A1 (de) 2004-09-22 2006-03-30 Osram Opto Semiconductors Gmbh Gehäuse für ein optoelektronisches Bauelement, optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
JP2006186297A (ja) 2004-12-03 2006-07-13 Toshiba Corp 半導体発光装置及びその製造方法
US7932499B2 (en) * 2006-03-13 2011-04-26 Hitachi Metals, Ltd. Radiation detector and method for producing the same
US9502624B2 (en) * 2006-05-18 2016-11-22 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same

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Publication number Publication date
US20120032362A1 (en) 2012-02-09
KR20090075806A (ko) 2009-07-09
US20090218584A1 (en) 2009-09-03
CN101523621B (zh) 2012-01-18
WO2008040324A1 (de) 2008-04-10
JP2010505254A (ja) 2010-02-18
DE102006046678A1 (de) 2008-04-03
EP2057695B1 (de) 2018-08-15
CN101523621A (zh) 2009-09-02
EP2057695A1 (de) 2009-05-13
US8476114B2 (en) 2013-07-02
KR101444479B1 (ko) 2014-09-25
TWI347679B (en) 2011-08-21
US8071987B2 (en) 2011-12-06
TW200830560A (en) 2008-07-16

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