CN103026512B - 器件和用于制造器件的方法 - Google Patents
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Abstract
说明一种具有光电子半导体芯片(2)的器件(1),所述光电子半导体芯片利用连接层(3)固定在接线载体(4)上并且嵌入到包封(5)中,其中在连接层(3)与包封(5)之间至少局部地布置去耦合层(6)。此外说明一种用于制造器件的方法。
Description
技术领域
本申请涉及一种具有光电子半导体芯片的器件和一种用于制造这样的器件的方法。
本专利申请要求德国专利申请102010026343.5的优先权,其公开内容通过回引结合于此。
背景技术
为了制造可表面安装的光电子器件、如可表面安装的发光二极管,可以将半导体芯片固定在壳体中并且为了保护该半导体芯片配备包封。
机械应力可引起半导体芯片的固定的松脱,这可能导致器件的提前故障。
发明内容
任务是说明一种在运行中具有提高的可靠性的器件。另外,将说明一种可以用于简单和可靠地制造这样的部件的方法。
该任务通过独立权利要求的主题解决。设计和扩展方案是从属权利要求的主题。
根据一个实施方式,器件具有光电子半导体芯片,该半导体芯片利用连接层固定在接线载体上并且嵌入到包封中。在连接层与包封之间至少局部地布置去耦合层。借助于该去耦合层使连接层和包封彼此机械去耦合。器件中的机械应力、尤其是拉应力导致半导体芯片脱落的风险由此在很大程度上被减小。去耦合层因此被构造为,使得在包封中出现的应力不传输到连接层或者仅有减少的部分传输到连接层。
所述包封可以在对器件的俯视中尤其是完全地覆盖去耦合层。
此外借助于去耦合层减少对包封的弹性模量的要求。因此,对于所述包封也可以应用具有比较高的弹性模量的材料,而不会由此危及半导体芯片与接线载体之间的连接的机械稳定性。例如,所述包封可以包含具有2GPa或更多的弹性模量的环氧化物。
所述去耦合层优选具有比包封小的弹性模量。弹性模量越小,材料对其变形的抵抗越小。
去耦合层的材料优选具有最高1GPa、特别优选最高200kPa的弹性模量。
优选地,所述去耦合层具有其玻璃化转变温度TG处于室温或更低的材料。在温度高于玻璃化转变温度时,有机或无机玻璃处于能量弹性的范围中,在该范围中所述玻璃的特点在于高的可变形性。所述去耦合层优选包含来自如下材料组的组的材料,所述材料组由弹性体、树脂、硅树脂、硅酮、硅凝胶、聚氨酯、橡胶构成。
在一个优选的设计中,在去耦合层中嵌入颗粒。借助于所述颗粒可以提高去耦合层的密度。这可以引起去耦合层的较小的热效应。应力传输到连接层的危险由此在很大程度上被减小。
此外借助于所述颗粒可以调整去耦合层的光学特性。
在一个设计变型中,去耦合层针对由半导体芯片在运行时产生的或要探测的辐射被构造为反射性的。在该情况下可以在去耦合层中嵌入尤其是扩散式地反射辐射的颗粒。例如可以通过添加二氧化钛颗粒实现85%或者更多、例如95%的可见光谱范围中的反射性。
在一个可替换的设计变型中,去耦合层针对由半导体芯片在运行时发射的辐射被构造为有针对性地吸收性的。“有针对性地吸收性的”尤其是被理解为,辐射在入射到去耦合层上时被吸收至少80%的份额。所述去耦合层尤其是可以为人眼而构造为黑色的。借助于这样的去耦合层,可以在发射辐射的器件中实现在关断状态与接通状态之间的提高的对比度。例如炭黑颗粒适用于吸收性的去耦合层。
在一个优选的设计中,去耦合层在对器件的俯视中至少部分地、优选完全覆盖连接层的伸出半导体芯片的部分。通过完全覆盖确保了,包封和连接层不在器件的任何位置处直接彼此接界。
在另一优选的设计中,去耦合层直接与半导体芯片接界。尤其是,所述去耦合层在横向方向上、也就是沿着光电子半导体芯片的半导体层的主延伸面走向方向围绕半导体芯片。
所述器件优选地实施为可表面安装的器件(surfacemounteddevice(表面安装器件),SMD)。此外,所述器件优选具有壳体。所述壳体可以具有在其中布置有半导体芯片的空穴。此外,所述接线载体可以设计为导线框架的一部分,所述壳体的壳基体模制在该导线框架处。
在一个优选的扩展方案中,空穴的底面在对器件的俯视图中完全被去耦合层覆盖。换句话说,空穴的与底面接界的侧面在横向方向上限制去耦合层。
在另一优选的实施方式中,半导体芯片在垂直方向上伸出去耦合层。因此通过简单的方式确保,半导体芯片的背向接线载体的上侧不被去耦合层覆盖。
在用于制造具有光电子半导体芯片的器件的方法中,根据实施方式提供接线载体。将该半导体芯片借助于连接层固定在接线载体上。将去耦合层施加到连接层上。将包封施加到去耦合层上,其中半导体芯片被嵌入到该包封中。
借助于去耦合层可以这样施加包封,使得器件中的机械应力不能或者至少不明显地危及半导体芯片与接线载体之间的连接。
在一个优选的设计中,去耦合层借助于分发器(Dispenser)来施加。可替换地或者补充地,可以应用其它的掺杂和填充方法,例如浇注、喷射、压塑或者按压。
所述方法特别适用于制造上面所述的器件。结合器件详述的特征因此也可以用于方法,并且反之亦然。
附图说明
其它的特征、构型和适宜性由结合附图对实施例的以下描述得出。
图1以示意性剖面图示出器件的第一实施例,
图2以示意性剖面图示出器件的第二实施例,
图3示出用于器件的光电子半导体芯片的实施例,
图4A至4C根据分别以示意性剖面图示出的中间步骤示出用于制造器件的方法的实施例。
相同的、相同类型的或者起相同作用的元件在附图中配备同样的附图标记。
具体实施方式
附图和在附图中所示元件彼此之间的大小关系不应被视作为比例正确的。更确切地说,各个元件可以为了改善的可表示性和/或为了更好的理解而被夸大地示出。器件的第一实施例在图1中以示意性剖面图示出。器件1具有光电子半导体芯片2,该半导体芯片2借助于连接层3固定在接线载体4处。对于连接层3尤其合适的是粘接层。但是也可以应用焊接层。
接线载体4和另外的接线载体42构成光电子器件1的导线框架。壳体40模制(anformen)在该导线框架处。
器件1示例性地实施为可表面安装的器件,该器件借助于接线载体4和另外的接线载体42可从背向辐射透射面10的侧被在外部电接触。
壳体40具有空穴410,在该空穴410中布置半导体芯片2。另外的接线导体42借助于连接线路43、诸如接合线连接与半导体芯片2连接,使得在器件运行时载流子可以经由接线载体4和另外的接线载体42被从不同的侧注入到半导体芯片2中或者可以从半导体芯片流出。
半导体芯片2和连接线路43嵌入到包封5中,所述包封保护半导体芯片和连接线路免受如机械载荷或者潮气的外部影响。
包封5构成器件的辐射透射面10。
在包封5与连接层3之间布置去耦合层6。该去耦合层6在对器件的俯视中覆盖连接层3的在横向方向上、也就是沿着半导体芯片2的半导体层的主延伸平面伸出半导体芯片2的部分。因此,包封5和连接层3不在任何位置处彼此直接接界。连接层和包封之间的机械去耦合由此通过可靠的方式实现。
包封5在对器件1的俯视中完全覆盖去耦合层6。
去耦合层6具有比包封小的弹性模量。器件1中的机械应力因此仅仅以减小的份额作用到连接层3上。半导体芯片2诸如在接线载体和连接层3之间的界面处从接线载体4脱落的风险因此在很大程度上减少。
去耦合层6优选具有最高1GPa、特别优选最高200kPa的弹性模量。
去耦合层优选包含其玻璃化转变温度TG处于室温或者更低的材料。去耦合层优选包含由以下材料构成的材料组的组中的材料:弹性体、树脂、硅树脂、硅酮、硅凝胶、聚氨酯、橡胶。
由于通过去耦合层6的机械去耦合,对于包封5还可以应用具有比较高的弹性模量、例如2GPa或者更多的材料。所述包封例如可以包含环氧树脂或者由环氧树脂构成。
半导体芯片2在垂直方向上伸出去耦合层6。半导体芯片2的背向接线载体4的表面因此保持未被去耦合层6覆盖。
半导体芯片2、尤其是被设置用于发射和/或探测辐射的活性区域优选包含III-V族化合物半导体材料。
III-V族化合物半导体材料特别适合于在紫外(AlxInyGa1-x-yN)光谱范围中经由可见(AlxInyGa1-x-yN,尤其是对于蓝色辐射至绿色辐射,或者AlxInyGa1-x-yP,尤其是对于黄色辐射至红色辐射)光谱范围直至到红外(AlxInyGa1-x-yAs)光谱范围中产生辐射。在此情况下分别成立的有0≤x≤1,0≤y≤1和x+y≤1,尤其是其中x≠1,y≠1,x≠0和/或y≠0。利用尤其是来自所述材料系统的III-V族半导体材料,可以此外在产生辐射时实现高的内部量子效率。
器件的第二实施例在图2中以示意性剖面图示出。该第二实施例基本上对应于结合图1所述的第一实施例。与第一实施例不同的是,包封5在对该器件的俯视中在背向半导体芯片2的侧上凸弯曲。该包封5在该实施例中附加地满足用于由半导体芯片在运行中发射的和/或要接收的辐射的会聚透镜的作用。该包封在此情况下可以以一个部分或者以多个部分构造。包封的构成透镜的区域例如在将半导体芯片密封之后的单独的制造步骤中构造。
借助于辐射透射面10侧的包封5的形状可调整器件1的空间辐射特性。
此外与第一实施例不同的是,在去耦合层6中嵌入颗粒65。借助于所述颗粒可以调整、尤其是提高去耦合层的密度。由此可以通过简单的方式减小去耦合层的热膨胀。
颗粒65优选具有200nm至10μm之间的(含200nm和10μm)、特别优选500nm至5μm之间的(含500nm和5μm)平均大小。
所述颗粒例如可以包含玻璃、氧化物(诸如氧化铝、氧化硅或者二氧化钛),或者由这样的材料构成。所述颗粒此外可以影响去耦合层的光学特性。
在一个设计变型中,在去耦合层6中嵌入反射性的颗粒。例如可以利用二氧化钛颗粒在可见光谱范围中实现85%或者更多、例如95%的反射率。借助于构造为反射性的去耦合层,可以在整体上提高从器件1出射的辐射功率。
在可替换的设计变型中,在去耦合层中嵌入有针对性地吸收辐射的颗粒。适用于此的例如是炭黑颗粒。
借助于实施为有针对性地吸收的去耦合层6,可以提高器件1在断开状态和接通状态之间的对比度。
所述颗粒当然也可以在结合图1所述的第一实施例中应用。但是,根据对去耦合层6的要求,也可以放弃所述颗粒。
对根据第一或第二实施例的器件特别合适的半导体芯片2的实施例在图3中以示意性剖面图示出。
该半导体芯片2具有带有半导体层序列的半导体本体21,该半导体层序列构成半导体本体。半导体本体21布置在载体27上,该载体27与用于半导体本体21的半导体层的生长衬底不同。该载体用于半导体本体21的机械稳定性。生长衬底对此是不再需要的。其中去除了生长衬底的半导体芯片也被称为薄膜半导体芯片。
此外在本发明的范围中,薄膜半导体芯片、诸如薄膜发光二极管芯片的特点可以在于以下特征性特征中的至少一个:
-在包括具有活性区域的半导体层序列、尤其是外延层序列的半导体本体的向着载体元件、例如载体27的第一主面处施加镜层或者构造诸如作为布拉格境集成到半导体层序列中的镜层,该镜层将在该半导体层序列中产生的辐射的至少一部分反射回该半导体层序列中;
-该半导体层序列具有在20μm或者更小的范围中、尤其是在10μm范围中的厚度;和/或
-该半导体层序列包含至少一个这样的半导体层,该半导体层具有至少一个具有混合结构的面,所述混合结构在理想情况下导致光在半导体层序列中的近似遍历的分布,也就是说所述混合结构具有尽可能遍历地随机的散射特性。
薄膜发光二极管芯片的基本原理例如在I.Schnitzer等人的Appl.Phys.Lett.63(16),1993年10月18日,2174-2176中描述,其公开内容就此而言特此通过回引结合到本申请中。
半导体本体21具有活性区域22,该活性区域22布置在第一半导体区域23与第二半导体区域24之间。第一半导体区域23和第二半导体区域24具有彼此不同的导通类型,从而形成二极管结构。
半导体本体21借助于安装层26固定在载体27处。例如焊剂或者粘合剂适用于该安装层。
在半导体本体21与载体27之间布置镜层25,该镜层25被设置用于在运行时将在活性区域22中产生的辐射在半导体本体的辐射出射面20的方向上反射。
在半导体芯片2运行时,经由第一接触部28和第二接触部29将载流子从不同的侧注入到活性区域22中。在第二接触部29与半导体本体21之间构造分布层29a。该分布层被设置用于将载流子均匀地注入到活性区域22中。分布层29a例如可以包含透明导电氧化物(transparentconductiveoxide(透明导电氧化物),TCO)或者由这样的材料构成。可替换地或者补充地,分布层29a可以具有金属层,该金属层这样薄,使得该金属层对于在活性区域22中产生的辐射是透明的或者至少是半透明的。但是,在第一半导体区域23的横向导电率足够高的情况下,也可以舍去分布层29a。
在半导体本体21的辐射出射面20上构造优选预先制备的转换板7,在该转换板7中嵌入用于对在活性区域22中产生的辐射进行转换的转换材料71。该转换板可以借助于固定层(没有明确示出)固定在半导体本体21处。于此不同地,转换材料71也可以嵌入到包封5中。尤其是在直接利用由半导体芯片发出的初级辐射的情况下,也可以完全舍去转换材料。
此外,与该所述的实施例不同地也可以应用这样的半导体芯片,在该半导体芯片的情况下,载体27由用于半导体本体的半导体层序列的生长衬底构成。
安装层26在该情况下是不需要的。此外也可以应用这样的半导体芯片,在该半导体芯片的情况下,至少两个接触部被布置在半导体芯片的同一侧。
可替换地或者补充地,半导体芯片也可以构造为用于接收辐射的辐射探测器。
在图4A至4A从中示例性地针对器件的制造示出用于制造器件的方法的实施例,该方法如结合图1所述那样地实施。
提供具有接线载体4和另外的接线载体42的壳体40。该壳体40具有被设置用于安装半导体芯片的空穴410。
半导体芯片2借助于连接层3、例如导电的粘接层或焊接层固定在接线载体4处。
如在图4B中所示的,在连接层3上的在横向方向上伸出半导体芯片2的区域中施加去耦合层。这例如可以借助于分发器来进行。可替换地,例如可以应用浇注、喷射、压塑、或者按压。
为了制造半导体芯片2与另外的接线载体42的导电连接,在半导体芯片2与该另外的接线载体之间构造接合线连接作为连接线路43(图4C)。但是与该所述实施例不同地,也可以在施加去耦合层之前构造连接线路43。
为了完成该器件将半导体芯片2和连接线路43嵌入到包封5中。在此,包封5借助于去耦合层6与连接层3机械地去耦合。出现的机械应力引起半导体芯片2从接线载体40脱落的风险因此在很大程度上减小。器件的使用寿命和可靠性因此得到提高。
利用所述方法可以制造对于具有比较高的弹性模量的包封、例如基于环氧化物的包封的情况也具有高的可靠性和使用寿命的器件。包封5的材料因此不必首先针对弹性模量来选择,而是可以基于其它化学和/或物理特性、诸如光学透明度或老化稳定性来选择。
本发明不由于根据实施例的描述而受到限制。更确切地说,本发明包括每个新的特征以及特征的每个组合,这尤其是包含权利要求书中的特征的组合,即使当该特征或该组合本身没有明确地在权利要求书或实施例中说明时也是如此。
Claims (12)
1.具有光电子半导体芯片(2)的器件(1),所述半导体芯片利用连接层(3)固定在接线载体(4)上并且嵌入到包封(5)中,其中
-在连接层与包封之间至少局部地布置去耦合层(6);
-所述去耦合层具有最高1GPa的弹性模量;
-所述半导体芯片在垂直方向上伸出去耦合层;
-所述器件是具有另外的接线载体(42)和壳体(40)的表面安装的器件,其中所述壳体被模制在所述接线载体和所述另外的接线载体上;
-所述半导体芯片布置在所述壳体的空穴(410)中并借助于连接线路(43)与所述另外的接线载体连接;
-所述空穴的底面完全由所述去耦合层覆盖;
-所述连接线路嵌入到所述包封中且不穿过所述去耦合层。
2.根据权利要求1的器件,
其中所述去耦合层具有比所述包封小的弹性模量。
3.根据权利要求1的器件,
其中所述去耦合层具有最高200kPa的弹性模量。
4.根据权利要求1至3之一的器件,
其中在所述去耦合层中嵌入颗粒。
5.根据权利要求1至3之一的器件,
其中所述去耦合层针对由半导体芯片在运行时发射的或者要探测的辐射而被构造为反射性的。
6.根据权利要求1至3之一的器件,
其中所述去耦合层针对由半导体芯片在运行时发射的或者要探测的辐射被构造为有针对性地吸收性的。
7.根据权利要求1至3之一的器件,
其中所述去耦合层在对器件的俯视中完全覆盖连接层的伸出半导体芯片的部分。
8.根据权利要求1至3之一的器件,
其中所述去耦合层直接与半导体芯片接界。
9.根据权利要求1至3之一的器件,
其中去耦合层包含其玻璃化转变点处于室温或更低的材料。
10.用于制造具有光电子半导体芯片(2)的器件(1)的方法,具有步骤:
-提供接线载体(4);
-在壳体(40)的空穴(410)中借助于连接层(3)将半导体芯片(2)固定在接线载体(4)上,其中所述壳体被模制在所述接线载体和另外的接线载体(42)上;
-将去耦合层(6)施加到连接层(3)上,其中所述去耦合层具有最高1GPa的弹性模量并且所述半导体芯片在垂直方向上伸出所述去耦合层,而且所述空穴的底面完全由所述去耦合层覆盖;以及
-将包封(5)施加到去耦合层(6)上,其中所述半导体芯片(2)以及被用来将该半导体芯片与所述另外的接线载体相连接的连接线路(43)被嵌入到所述包封(5)中,而且所述连接线路不穿过所述去耦合层。
11.根据权利要求10的方法,
其中去耦合层借助于分发器来制造。
12.根据权利要求10的方法,
其中制造根据权利要求1至3之一的器件。
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DE102007029369A1 (de) * | 2007-06-26 | 2009-01-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
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DE4232637C2 (de) * | 1992-09-29 | 2002-10-31 | Osram Opto Semiconductors Gmbh | Lumineszenzdiode mit Reflektor, der einen abgestimmtem Elastizitätsmodul besitzt |
DE19625622A1 (de) * | 1996-06-26 | 1998-01-02 | Siemens Ag | Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
JP2002043625A (ja) * | 2000-07-19 | 2002-02-08 | Koha Co Ltd | Led装置 |
JP2004235261A (ja) * | 2003-01-28 | 2004-08-19 | Matsushita Electric Works Ltd | 光学系装置及びその製造方法 |
DE10245930A1 (de) * | 2002-09-30 | 2004-04-08 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Bauelement-Modul |
JP2004214478A (ja) * | 2003-01-07 | 2004-07-29 | Rohm Co Ltd | 半導体発光装置 |
JP4136693B2 (ja) * | 2003-02-07 | 2008-08-20 | 信越化学工業株式会社 | 発光装置及びその製造方法 |
JP2005026401A (ja) * | 2003-07-01 | 2005-01-27 | Matsushita Electric Ind Co Ltd | 発光ダイオード |
US7589352B2 (en) * | 2003-11-04 | 2009-09-15 | Shin-Etsu Handotai Co., Ltd. | Light emitting device |
JP2006093672A (ja) * | 2004-08-26 | 2006-04-06 | Toshiba Corp | 半導体発光装置 |
JP2006269986A (ja) * | 2005-03-25 | 2006-10-05 | Matsushita Electric Ind Co Ltd | 発光装置 |
JP2007005465A (ja) * | 2005-06-22 | 2007-01-11 | Matsushita Electric Works Ltd | 半導体発光装置 |
TWI338380B (en) * | 2006-10-11 | 2011-03-01 | Chuan Yu Hung | Light emitting diode incorporating high refractive index material |
JP2007329515A (ja) * | 2007-09-14 | 2007-12-20 | Sharp Corp | 半導体発光装置 |
JP2009076516A (ja) * | 2007-09-19 | 2009-04-09 | Toshiba Lighting & Technology Corp | 照明装置 |
JP4808244B2 (ja) * | 2008-12-09 | 2011-11-02 | スタンレー電気株式会社 | 半導体発光装置およびその製造方法 |
DE102010026343A1 (de) | 2010-07-07 | 2012-03-29 | Osram Opto Semiconductors Gmbh | Bauelement und Verfahren zur Herstellung eines Bauelements |
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2010
- 2010-07-07 DE DE102010026343A patent/DE102010026343A1/de not_active Withdrawn
-
2011
- 2011-07-01 EP EP11743203.9A patent/EP2591511B1/de not_active Not-in-force
- 2011-07-01 WO PCT/EP2011/061133 patent/WO2012004202A1/de active Application Filing
- 2011-07-01 JP JP2013517317A patent/JP5721823B2/ja not_active Expired - Fee Related
- 2011-07-01 KR KR1020137003131A patent/KR20130119907A/ko active Search and Examination
- 2011-07-01 US US13/808,705 patent/US20130207144A1/en not_active Abandoned
- 2011-07-01 CN CN201180033647.9A patent/CN103026512B/zh not_active Expired - Fee Related
Patent Citations (2)
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CN1471178A (zh) * | 2002-07-25 | 2004-01-28 | 松下电工株式会社 | 光电元件部件 |
DE102007029369A1 (de) * | 2007-06-26 | 2009-01-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
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CN103026512A (zh) | 2013-04-03 |
EP2591511A1 (de) | 2013-05-15 |
DE102010026343A1 (de) | 2012-03-29 |
US20130207144A1 (en) | 2013-08-15 |
EP2591511B1 (de) | 2018-10-31 |
JP5721823B2 (ja) | 2015-05-20 |
WO2012004202A1 (de) | 2012-01-12 |
JP2013535808A (ja) | 2013-09-12 |
KR20130119907A (ko) | 2013-11-01 |
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