JP2013535808A - デバイスおよびデバイスの製造方法 - Google Patents
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Abstract
Description
・半導体ボディが、活性領域を含む半導体層列、特にエピタキシ層列を含む。この半導体ボディのうち、支持体部材(例えば支持体27)に面する第1の主表面に、鏡面層が被着されているか、または、半導体層列内にブラッグ鏡が集積されている。鏡面層またはブラッグ鏡は、半導体層列内で形成された光の少なくとも一部を反射により半導体層列内へ戻す。
・半導体層列は20μm以下の範囲の厚さ、特に10μmの範囲の厚さを有する。および/または、
・半導体層列は、インタミキシング構造を有する少なくとも1つの表面を備えた少なくとも1つの半導体層を含む。インタミキシング構造は理想的には半導体層列において近似的な光のエルゴード分布を生じさせる。つまり、半導体層列が近似にエルゴード確率分散特性を有する。
Claims (15)
- オプトエレクトロニクス半導体チップ(2)を備えたデバイス(1)であって、
前記半導体チップ(2)が、接続層(3)によって接続支持体(4)上に固定されて被覆材(5)に埋め込まれており、
前記接続層と前記被覆材との間の少なくとも一部の領域に分離層(6)が配置されている
ことを特徴とするデバイス。 - 前記分離層は前記被覆材よりも小さい弾性率を有する、請求項1記載のデバイス。
- 前記分離層は最大で1GPaの弾性率を有する、請求項1または2記載のデバイス。
- 前記分離層には粒子が埋め込まれている、請求項1から3までのいずれか1項記載のデバイス。
- 前記分離層は、動作中に前記半導体チップから放出される放射または前記半導体チップによって検出される放射に対して、反射性を有するように構成されている、請求項1から4までのいずれか1項記載のデバイス。
- 前記分離層は、動作中に前記半導体チップから放出される放射または前記半導体チップによって検出される放射に対して、所望に応じた吸収性を有するように構成されている、請求項1から4までのいずれか1項記載のデバイス。
- 前記分離層は、前記デバイスを上から見たとき、前記接続層のうち前記半導体チップを越えて突出する部分を完全に覆っている、請求項1から6までのいずれか1項記載のデバイス。
- 前記分離層は直接に前記半導体チップに接している、請求項1から7までのいずれか1項記載のデバイス。
- 前記半導体チップは垂直方向で前記分離層の上方に突出する、請求項1から8までのいずれか1項記載のデバイス。
- 前記デバイスはケーシングボディ(40)を備えており、前記半導体チップは前記ケーシングボディのキャビティ(410)内に配置されている、請求項1から9までのいずれか1項記載のデバイス。
- 前記キャビティの底面は前記分離層によって完全に覆われている、請求項10記載のデバイス。
- 前記分離層は、ガラス転移点が室温以下である材料を含む、請求項1から11までのいずれか1項記載のデバイス。
- オプトエレクトロニクス半導体チップ(2)を備えたデバイス(1)の製造方法であって、
接続支持体(4)を用意するステップと、
前記半導体チップ(2)を接続層(3)により前記接続支持体(4)上に固定するステップと、
前記接続層(3)上に分離層(6)を被着するステップと、
前記半導体チップ(2)が被覆材(5)内に埋め込まれるように、該被覆材(5)を前記分離層(6)上に設けるステップと
を含む
ことを特徴とするデバイスの製造方法。 - 前記分離層をディスペンサによって形成する、請求項13記載のデバイスの製造方法。
- 請求項1から12までのいずれか1項記載のデバイスを製造する、請求項13または14記載のデバイスの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010026343A DE102010026343A1 (de) | 2010-07-07 | 2010-07-07 | Bauelement und Verfahren zur Herstellung eines Bauelements |
DE102010026343.5 | 2010-07-07 | ||
PCT/EP2011/061133 WO2012004202A1 (de) | 2010-07-07 | 2011-07-01 | Bauelement und verfahren zur herstellung eines bauelements |
Publications (2)
Publication Number | Publication Date |
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JP2013535808A true JP2013535808A (ja) | 2013-09-12 |
JP5721823B2 JP5721823B2 (ja) | 2015-05-20 |
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Application Number | Title | Priority Date | Filing Date |
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JP2013517317A Expired - Fee Related JP5721823B2 (ja) | 2010-07-07 | 2011-07-01 | デバイスおよびデバイスの製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20130207144A1 (ja) |
EP (1) | EP2591511B1 (ja) |
JP (1) | JP5721823B2 (ja) |
KR (1) | KR20130119907A (ja) |
CN (1) | CN103026512B (ja) |
DE (1) | DE102010026343A1 (ja) |
WO (1) | WO2012004202A1 (ja) |
Cited By (2)
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JP2014057060A (ja) * | 2012-09-13 | 2014-03-27 | Lg Innotek Co Ltd | 発光素子及びこれを備えた照明システム |
JP2019207993A (ja) * | 2018-05-30 | 2019-12-05 | シーシーエス株式会社 | Led発光装置 |
Families Citing this family (18)
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DE102010026343A1 (de) | 2010-07-07 | 2012-03-29 | Osram Opto Semiconductors Gmbh | Bauelement und Verfahren zur Herstellung eines Bauelements |
US20130307013A1 (en) * | 2012-05-15 | 2013-11-21 | Avago Technlogies Ecbu Ip (Singapore) Pte. Ltd. | Light emitting device with dark layer |
KR101997243B1 (ko) * | 2012-09-13 | 2019-07-08 | 엘지이노텍 주식회사 | 발광 소자 및 조명 시스템 |
US8876330B2 (en) * | 2012-11-15 | 2014-11-04 | Illinois Tool Works Inc. | Illumination device |
KR102075522B1 (ko) * | 2013-01-07 | 2020-02-10 | 엘지이노텍 주식회사 | 발광소자패키지 |
KR102045778B1 (ko) * | 2013-08-30 | 2019-11-18 | 엘지디스플레이 주식회사 | 발광 다이오드 패키지 |
JP6176101B2 (ja) * | 2013-12-17 | 2017-08-09 | 日亜化学工業株式会社 | 樹脂パッケージ及び発光装置 |
CN104979338B (zh) * | 2014-04-10 | 2018-07-27 | 光宝光电(常州)有限公司 | 发光二极管封装结构 |
DE102014105839A1 (de) * | 2014-04-25 | 2015-10-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
EP3482422B1 (en) * | 2016-07-08 | 2022-11-16 | Eaton Intelligent Power Limited | Led light system |
DE102016117594A1 (de) | 2016-09-19 | 2018-03-22 | Osram Opto Semiconductors Gmbh | Licht emittierende Vorrichtung |
DE102017105035A1 (de) | 2017-03-09 | 2018-09-13 | Osram Opto Semiconductors Gmbh | Lichtemittierendes bauteil und verfahren zum herstellen eines lichtemittierenden bauteils |
DE102017106761B4 (de) * | 2017-03-29 | 2021-10-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer Vielzahl von oberflächenmontierbaren optoelektronischen Bauelementen und oberflächenmontierbares optoelektronisches Bauelement |
DE102017110850A1 (de) | 2017-05-18 | 2018-11-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
CN107731758B (zh) * | 2017-09-13 | 2019-12-06 | 厦门市三安光电科技有限公司 | 一种半导体元件的固晶方法及半导体元件 |
DE102018110506A1 (de) | 2018-05-02 | 2019-11-07 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement, konversionselement, verfahren zur herstellung einer vielzahl an konversionselementen und verfahren zur herstellung eines optoelektronischen bauelements |
TWI696451B (zh) * | 2019-01-15 | 2020-06-21 | 邱裕中 | 帶通紅外光血糖檢測系統 |
DE102019104436A1 (de) * | 2019-02-21 | 2020-08-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches bauteil und verfahren zur herstellung eines optoelektronischen bauteils |
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- 2011-07-01 CN CN201180033647.9A patent/CN103026512B/zh not_active Expired - Fee Related
- 2011-07-01 KR KR1020137003131A patent/KR20130119907A/ko active Search and Examination
- 2011-07-01 WO PCT/EP2011/061133 patent/WO2012004202A1/de active Application Filing
- 2011-07-01 EP EP11743203.9A patent/EP2591511B1/de not_active Not-in-force
- 2011-07-01 JP JP2013517317A patent/JP5721823B2/ja not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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EP2591511B1 (de) | 2018-10-31 |
KR20130119907A (ko) | 2013-11-01 |
EP2591511A1 (de) | 2013-05-15 |
US20130207144A1 (en) | 2013-08-15 |
DE102010026343A1 (de) | 2012-03-29 |
JP5721823B2 (ja) | 2015-05-20 |
CN103026512B (zh) | 2015-11-25 |
CN103026512A (zh) | 2013-04-03 |
WO2012004202A1 (de) | 2012-01-12 |
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