KR101428213B1 - 실리콘 블록 및 이의 제조방법 - Google Patents

실리콘 블록 및 이의 제조방법 Download PDF

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KR101428213B1
KR101428213B1 KR1020120130129A KR20120130129A KR101428213B1 KR 101428213 B1 KR101428213 B1 KR 101428213B1 KR 1020120130129 A KR1020120130129 A KR 1020120130129A KR 20120130129 A KR20120130129 A KR 20120130129A KR 101428213 B1 KR101428213 B1 KR 101428213B1
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South Korea
Prior art keywords
crystal
silicon
crystal seeds
gap
orientation
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KR1020120130129A
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Korean (ko)
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KR20130055534A (ko
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트렘파 마티아스
레이만 크리스티안
프라에드리히 조헨
디에트리히 마크
Original Assignee
솔라월드 이노베이션즈 게엠베하
프라운호퍼-게젤샤프트 추르 푀르데룽 데어 안제반텐 포르슝 에 파우
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Publication of KR20130055534A publication Critical patent/KR20130055534A/ko
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
KR1020120130129A 2011-11-18 2012-11-16 실리콘 블록 및 이의 제조방법 KR101428213B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011086669.8 2011-11-18
DE102011086669.8A DE102011086669B4 (de) 2011-11-18 2011-11-18 Verfahren zur Herstellung von Silizium-Blöcken sowie Silizium-Block

Publications (2)

Publication Number Publication Date
KR20130055534A KR20130055534A (ko) 2013-05-28
KR101428213B1 true KR101428213B1 (ko) 2014-08-07

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KR1020120130129A KR101428213B1 (ko) 2011-11-18 2012-11-16 실리콘 블록 및 이의 제조방법

Country Status (5)

Country Link
KR (1) KR101428213B1 (zh)
CN (1) CN103122478B (zh)
DE (1) DE102011086669B4 (zh)
MY (1) MY163711A (zh)
TW (1) TWI468560B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3005966B1 (fr) 2013-05-27 2016-12-30 Commissariat Energie Atomique Procede de fabrication d'un lingot de silicium par reprise sur germes en four de solidification dirigee
FR3005967B1 (fr) * 2013-05-27 2017-06-02 Commissariat Energie Atomique Procede de fabrication d'un lingot de silicium dote de joints de grains symetriques
FR3029941B1 (fr) * 2014-12-12 2019-10-11 Commissariat A L'energie Atomique Et Aux Energies Alternatives Pavage de germes
CN104911691B (zh) * 2015-04-15 2017-11-28 江西赛维Ldk太阳能高科技有限公司 一种籽晶的铺设方法、准单晶硅片的制备方法及准单晶硅片
CN106245113B (zh) * 2016-09-18 2018-10-19 江西赛维Ldk太阳能高科技有限公司 一种多晶硅锭及其制备方法和多晶硅片
CN106757331B (zh) * 2016-12-16 2019-03-08 赛维Ldk太阳能高科技(新余)有限公司 一种多晶硅锭及其制备方法
CN109385662A (zh) * 2018-12-12 2019-02-26 赛维Ldk太阳能高科技(新余)有限公司 一种籽晶的铺设方法、类单晶硅锭的制备方法和类单晶硅片
CN109989104A (zh) * 2019-01-25 2019-07-09 赛维Ldk太阳能高科技(新余)有限公司 一种铸造单晶硅锭的制备方法、单晶硅锭

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080089654A (ko) * 2006-01-20 2008-10-07 비피 코포레이션 노쓰 아메리카 인코포레이티드 광전 변환 소자용 단결정 캐스트 실리콘 및 단결정 캐스트 실리콘 바디들을 제조하는 방법 및 장치
KR20100049077A (ko) * 2007-07-20 2010-05-11 비피 코포레이션 노쓰 아메리카 인코포레이티드 시드 결정으로부터 캐스트 실리콘을 제조하는 방법 및 장치

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DE102005013410B4 (de) 2005-03-23 2008-01-31 Deutsche Solar Ag Vorrichtung und Verfahren zum Kristallisieren von Nichteisenmetallen
JP4887504B2 (ja) * 2005-07-04 2012-02-29 国立大学法人東北大学 粒界性格制御多結晶の作製方法
CN101370970B (zh) * 2006-01-20 2014-05-14 Amg艾迪卡斯特太阳能公司 制造单晶铸硅的方法和装置以及用于光电领域的单晶铸硅实体
WO2009014957A2 (en) 2007-07-20 2009-01-29 Bp Corporation North America Inc. Methods for manufacturing cast silicon from seed crystals
DE102007035756B4 (de) 2007-07-27 2010-08-05 Deutsche Solar Ag Verfahren zur Herstellung von Nichteisenmetall-Blöcken
DE102007038851A1 (de) * 2007-08-16 2009-02-19 Schott Ag Verfahren zur Herstellung von monokristallinen Metall- oder Halbmetallkörpern
CN101654805B (zh) * 2009-09-24 2011-09-14 浙江大学 一种单晶向、柱状大晶粒的铸造多晶硅的制备方法
DE102010029741B4 (de) * 2010-06-07 2013-02-28 Solarworld Innovations Gmbh Verfahren zum Herstellen von Silizium-Wafern, Silizium Wafer und Verwendung eines Silizium-Wafer als Silizium-Solarzelle
CN101935869B (zh) * 2010-09-17 2013-11-20 浙江大学 一种用于生长铸造单晶硅的坩埚及衬底片
CN102242394A (zh) * 2011-06-15 2011-11-16 安阳市凤凰光伏科技有限公司 铸造法生产类似单晶硅锭投炉硅料和晶种摆放方法

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KR20080089654A (ko) * 2006-01-20 2008-10-07 비피 코포레이션 노쓰 아메리카 인코포레이티드 광전 변환 소자용 단결정 캐스트 실리콘 및 단결정 캐스트 실리콘 바디들을 제조하는 방법 및 장치
JP2009523694A (ja) 2006-01-20 2009-06-25 ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド 幾何学的多結晶成型シリコンの製造方法および装置および光電変換用多結晶成型シリコン本体
JP2009523693A (ja) 2006-01-20 2009-06-25 ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド 光電変換用単結晶成型シリコンおよび単結晶成型シリコン本体の製造方法および装置
KR20100049077A (ko) * 2007-07-20 2010-05-11 비피 코포레이션 노쓰 아메리카 인코포레이티드 시드 결정으로부터 캐스트 실리콘을 제조하는 방법 및 장치

Also Published As

Publication number Publication date
DE102011086669B4 (de) 2016-08-04
DE102011086669A1 (de) 2013-05-23
MY163711A (en) 2017-10-13
CN103122478A (zh) 2013-05-29
KR20130055534A (ko) 2013-05-28
TW201326473A (zh) 2013-07-01
TWI468560B (zh) 2015-01-11
CN103122478B (zh) 2016-02-17

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