MY163711A - Method for producing silicon blocks - Google Patents

Method for producing silicon blocks

Info

Publication number
MY163711A
MY163711A MYPI2012004935A MYPI2012004935A MY163711A MY 163711 A MY163711 A MY 163711A MY PI2012004935 A MYPI2012004935 A MY PI2012004935A MY PI2012004935 A MYPI2012004935 A MY PI2012004935A MY 163711 A MY163711 A MY 163711A
Authority
MY
Malaysia
Prior art keywords
container
silicon
case
crystal seeds
silicon melt
Prior art date
Application number
MYPI2012004935A
Other languages
English (en)
Inventor
Trempa Matthias
Reimann Christian
Friedrich Jochen
Dietrich Marc
Original Assignee
Solarworld Innovations Gmbh
Fraunhofer Ges Forschung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solarworld Innovations Gmbh, Fraunhofer Ges Forschung filed Critical Solarworld Innovations Gmbh
Publication of MY163711A publication Critical patent/MY163711A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
MYPI2012004935A 2011-11-18 2012-11-14 Method for producing silicon blocks MY163711A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102011086669.8A DE102011086669B4 (de) 2011-11-18 2011-11-18 Verfahren zur Herstellung von Silizium-Blöcken sowie Silizium-Block

Publications (1)

Publication Number Publication Date
MY163711A true MY163711A (en) 2017-10-13

Family

ID=48221850

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2012004935A MY163711A (en) 2011-11-18 2012-11-14 Method for producing silicon blocks

Country Status (5)

Country Link
KR (1) KR101428213B1 (zh)
CN (1) CN103122478B (zh)
DE (1) DE102011086669B4 (zh)
MY (1) MY163711A (zh)
TW (1) TWI468560B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3005966B1 (fr) 2013-05-27 2016-12-30 Commissariat Energie Atomique Procede de fabrication d'un lingot de silicium par reprise sur germes en four de solidification dirigee
FR3005967B1 (fr) 2013-05-27 2017-06-02 Commissariat Energie Atomique Procede de fabrication d'un lingot de silicium dote de joints de grains symetriques
FR3029941B1 (fr) * 2014-12-12 2019-10-11 Commissariat A L'energie Atomique Et Aux Energies Alternatives Pavage de germes
CN104911691B (zh) * 2015-04-15 2017-11-28 江西赛维Ldk太阳能高科技有限公司 一种籽晶的铺设方法、准单晶硅片的制备方法及准单晶硅片
CN106245113B (zh) * 2016-09-18 2018-10-19 江西赛维Ldk太阳能高科技有限公司 一种多晶硅锭及其制备方法和多晶硅片
CN106757331B (zh) * 2016-12-16 2019-03-08 赛维Ldk太阳能高科技(新余)有限公司 一种多晶硅锭及其制备方法
CN109385662A (zh) * 2018-12-12 2019-02-26 赛维Ldk太阳能高科技(新余)有限公司 一种籽晶的铺设方法、类单晶硅锭的制备方法和类单晶硅片
CN109989104A (zh) * 2019-01-25 2019-07-09 赛维Ldk太阳能高科技(新余)有限公司 一种铸造单晶硅锭的制备方法、单晶硅锭

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005013410B4 (de) 2005-03-23 2008-01-31 Deutsche Solar Ag Vorrichtung und Verfahren zum Kristallisieren von Nichteisenmetallen
WO2007004631A1 (ja) * 2005-07-04 2007-01-11 Tohoku University 粒界性格制御多結晶の作製方法
JP5486190B2 (ja) 2006-01-20 2014-05-07 エイエムジー・アイデアルキャスト・ソーラー・コーポレーション 光電変換用単結晶成型シリコンおよび単結晶成型シリコン本体の製造方法および装置
CN101370969A (zh) * 2006-01-20 2009-02-18 Bp北美公司 制造几何多晶铸硅的方法和装置及用于光电池的几何多晶铸硅实体
CN101755075A (zh) * 2007-07-20 2010-06-23 Bp北美公司 从籽晶制造浇铸硅的方法和装置
EP2505695A3 (en) 2007-07-20 2013-01-09 AMG Idealcast Solar Corporation Methods for manufacturing cast silicon from seed crystals
DE102007035756B4 (de) 2007-07-27 2010-08-05 Deutsche Solar Ag Verfahren zur Herstellung von Nichteisenmetall-Blöcken
DE102007038851A1 (de) * 2007-08-16 2009-02-19 Schott Ag Verfahren zur Herstellung von monokristallinen Metall- oder Halbmetallkörpern
CN101654805B (zh) * 2009-09-24 2011-09-14 浙江大学 一种单晶向、柱状大晶粒的铸造多晶硅的制备方法
DE102010029741B4 (de) * 2010-06-07 2013-02-28 Solarworld Innovations Gmbh Verfahren zum Herstellen von Silizium-Wafern, Silizium Wafer und Verwendung eines Silizium-Wafer als Silizium-Solarzelle
CN101935869B (zh) * 2010-09-17 2013-11-20 浙江大学 一种用于生长铸造单晶硅的坩埚及衬底片
CN102242394A (zh) * 2011-06-15 2011-11-16 安阳市凤凰光伏科技有限公司 铸造法生产类似单晶硅锭投炉硅料和晶种摆放方法

Also Published As

Publication number Publication date
CN103122478A (zh) 2013-05-29
KR20130055534A (ko) 2013-05-28
DE102011086669B4 (de) 2016-08-04
TW201326473A (zh) 2013-07-01
DE102011086669A1 (de) 2013-05-23
TWI468560B (zh) 2015-01-11
KR101428213B1 (ko) 2014-08-07
CN103122478B (zh) 2016-02-17

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