PL2815004T3 - SPOSÓB WYTWARZANIA MONOKRYSZTAŁÓW lll-N I MONOKRYSZTAŁ lll-N - Google Patents

SPOSÓB WYTWARZANIA MONOKRYSZTAŁÓW lll-N I MONOKRYSZTAŁ lll-N

Info

Publication number
PL2815004T3
PL2815004T3 PL13712740T PL13712740T PL2815004T3 PL 2815004 T3 PL2815004 T3 PL 2815004T3 PL 13712740 T PL13712740 T PL 13712740T PL 13712740 T PL13712740 T PL 13712740T PL 2815004 T3 PL2815004 T3 PL 2815004T3
Authority
PL
Poland
Prior art keywords
iii
producing
single crystal
crystals
single crystals
Prior art date
Application number
PL13712740T
Other languages
English (en)
Inventor
Marit GRÜNDER
Frank Brunner
Eberhard Richter
Frank Habel
Markus Weyers
Original Assignee
Freiberger Compound Materials Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE201210204551 external-priority patent/DE102012204551A1/de
Priority claimed from DE102012204553.8A external-priority patent/DE102012204553B4/de
Application filed by Freiberger Compound Materials Gmbh filed Critical Freiberger Compound Materials Gmbh
Publication of PL2815004T3 publication Critical patent/PL2815004T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24851—Intermediate layer is discontinuous or differential

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
PL13712740T 2012-03-21 2013-03-21 SPOSÓB WYTWARZANIA MONOKRYSZTAŁÓW lll-N I MONOKRYSZTAŁ lll-N PL2815004T3 (pl)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE201210204551 DE102012204551A1 (de) 2012-03-21 2012-03-21 Verfahren zur Herstellung von III-N-Einkristallen, und III-N-Einkristall
DE102012204553.8A DE102012204553B4 (de) 2012-03-21 2012-03-21 Verfahren zur Herstellung eines Templats, so hergestelltes Templat, dessen Verwendung, Verfahren zur Herstellung von III-N-Einkristallen, Verfahren zur Herstellung von III-N-Kristallwafern, deren Verwendung und Verwendung von Maskenmaterialien
US201261614190P 2012-03-22 2012-03-22
US201261614161P 2012-03-22 2012-03-22
PCT/EP2013/055891 WO2013139887A1 (de) 2012-03-21 2013-03-21 Verfahren zur herstellung von iii-n-einkristallen, und iii-n-einkristall
EP13712740.3A EP2815004B1 (de) 2012-03-21 2013-03-21 Verfahren zur herstellung von iii-n-einkristallen, und iii-n-einkristall

Publications (1)

Publication Number Publication Date
PL2815004T3 true PL2815004T3 (pl) 2018-05-30

Family

ID=49221876

Family Applications (2)

Application Number Title Priority Date Filing Date
PL13712741T PL2815421T3 (pl) 2012-03-21 2013-03-21 SPOSÓB WYTWARZANIA MATRYC lll-N I ICH DALSZEJ OBÓRKI I MATRYCA lll-N
PL13712740T PL2815004T3 (pl) 2012-03-21 2013-03-21 SPOSÓB WYTWARZANIA MONOKRYSZTAŁÓW lll-N I MONOKRYSZTAŁ lll-N

Family Applications Before (1)

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PL13712741T PL2815421T3 (pl) 2012-03-21 2013-03-21 SPOSÓB WYTWARZANIA MATRYC lll-N I ICH DALSZEJ OBÓRKI I MATRYCA lll-N

Country Status (7)

Country Link
US (4) US9896779B2 (pl)
EP (2) EP2815421B1 (pl)
JP (3) JP6349298B2 (pl)
KR (3) KR102192130B1 (pl)
CN (4) CN106968014B (pl)
PL (2) PL2815421T3 (pl)
WO (2) WO2013139887A1 (pl)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105745366B (zh) * 2013-11-07 2018-12-11 日本碍子株式会社 GaN模板基板和器件基板
JP6119712B2 (ja) * 2014-10-08 2017-04-26 トヨタ自動車株式会社 半導体装置の製造方法
FR3031833B1 (fr) * 2015-01-21 2018-10-05 Centre National De La Recherche Scientifique (Cnrs) Procede de fabrication d'une structure semi-conductrice a base de nitrures d'elements iii passivee et une telle structure
DE102015205104A1 (de) 2015-03-20 2016-09-22 Freiberger Compound Materials Gmbh Züchtung von A-B Kristallen ohne Kristallgitter-Krümmung
US9583187B2 (en) * 2015-03-28 2017-02-28 Intel Corporation Multistage set procedure for phase change memory
KR102112249B1 (ko) * 2016-04-08 2020-05-18 스탠리 일렉트릭 컴퍼니, 리미티드 반도체 웨이퍼
KR102783348B1 (ko) * 2016-12-16 2025-03-20 삼성전자주식회사 질화물 반도체 기판의 형성 방법 및 반도체 소자의 제조 방법
JP6888794B2 (ja) * 2017-03-22 2021-06-16 住友電工デバイス・イノベーション株式会社 半導体基板の製造方法
CN107093665B (zh) * 2017-05-15 2019-07-09 中国电子科技集团公司第二十六研究所 一种压电薄膜换能器用WSiAlN薄膜及其制备方法
FR3068994B1 (fr) * 2017-07-11 2021-12-10 Commissariat Energie Atomique Procede de realisation d'une couche cristalline en un compose iii-n par epitaxie van der waals a partir de graphene
WO2019066787A1 (en) * 2017-09-26 2019-04-04 Sixpoint Materials, Inc. CRYSTALLINE GERM FOR THE GROWTH OF A SOLID GALLIUM NITRIDE CRYSTAL IN SUPERCRITICAL AMMONIA AND METHOD OF MANUFACTURE
JP7245501B2 (ja) * 2018-03-02 2023-03-24 国立大学法人東海国立大学機構 Ｉｉｉ族窒化物半導体素子の製造方法および基板の洗浄方法
CN110752171B (zh) * 2019-11-01 2022-07-29 长江存储科技有限责任公司 晶圆弯曲度调整装置及方法
NL2027098B1 (en) * 2020-01-16 2021-10-14 Asml Netherlands Bv Pellicle membrane for a lithographic apparatus
TWI887353B (zh) * 2020-02-07 2025-06-21 日商Ｆｌｏｓｆｉａ股份有限公司 半導體元件、半導體裝置及半導體系統
CN111223926B (zh) * 2020-04-22 2020-07-24 浙江集迈科微电子有限公司 卷式GaN基半导体器件及其制备方法
CN113410352B (zh) * 2021-07-30 2023-07-28 山西中科潞安紫外光电科技有限公司 一种复合AlN模板及其制备方法
CN115084328B (zh) * 2022-07-21 2025-08-05 江苏第三代半导体研究院有限公司 外延结构及其制备方法和半导体器件

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6440823B1 (en) 1994-01-27 2002-08-27 Advanced Technology Materials, Inc. Low defect density (Ga, Al, In)N and HVPE process for making same
US6958093B2 (en) 1994-01-27 2005-10-25 Cree, Inc. Free-standing (Al, Ga, In)N and parting method for forming same
JP3361285B2 (ja) 1996-01-19 2003-01-07 松下電器産業株式会社 窒化ガリウム系化合物半導体発光素子及び窒化ガリウム系化合物半導体の製造方法
JPH11191657A (ja) * 1997-04-11 1999-07-13 Nichia Chem Ind Ltd 窒化物半導体の成長方法及び窒化物半導体素子
US7560296B2 (en) * 2000-07-07 2009-07-14 Lumilog Process for producing an epitalixal layer of galium nitride
FR2769924B1 (fr) * 1997-10-20 2000-03-10 Centre Nat Rech Scient Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche
JP3788037B2 (ja) 1998-06-18 2006-06-21 住友電気工業株式会社 ＧａＮ単結晶基板
JP2002043785A (ja) * 2000-07-28 2002-02-08 Murata Mfg Co Ltd シールドケース及びそれを用いた電子機器及びそれを用いた電子装置及びシールドケースの製造方法
US6497763B2 (en) * 2001-01-19 2002-12-24 The United States Of America As Represented By The Secretary Of The Navy Electronic device with composite substrate
US7501023B2 (en) 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
DE10159988B4 (de) * 2001-12-06 2016-01-07 Kautex Textron Gmbh & Co. Kg Behälter zur Bevorratung und zum Ausgießen von Flüssigkeiten
TW561526B (en) * 2001-12-21 2003-11-11 Aixtron Ag Method for depositing III-V semiconductor layers on a non-III-V substrate
JP3569807B2 (ja) * 2002-01-21 2004-09-29 松下電器産業株式会社 窒化物半導体素子の製造方法
GB0203058D0 (en) * 2002-02-09 2002-03-27 Bp Chem Int Ltd Production of olefins
JP3997827B2 (ja) 2002-04-30 2007-10-24 住友電気工業株式会社 窒化ガリウム成長用基板及び窒化ガリウム成長用基板の製造方法並びに窒化ガリウム基板の製造方法
JP4117156B2 (ja) * 2002-07-02 2008-07-16 日本電気株式会社 Ｉｉｉ族窒化物半導体基板の製造方法
US7461728B2 (en) * 2004-03-01 2008-12-09 University Of Vermont And State Agricultural College Active vibration damping system
JP3888374B2 (ja) * 2004-03-17 2007-02-28 住友電気工業株式会社 ＧａＮ単結晶基板の製造方法
GB2418532A (en) 2004-09-28 2006-03-29 Arima Optoelectronic Textured light emitting diode structure with enhanced fill factor
DE102005021099A1 (de) * 2005-05-06 2006-12-07 Universität Ulm GaN-Schichten
DE102005023302B4 (de) 2005-05-13 2010-09-16 Laytec Gesellschaft Für In-Situ und Nano-Sensorik mbH Vorrichtung und Verfahren zur Messung der Krümmung einer Oberfläche
JP5023318B2 (ja) 2005-05-19 2012-09-12 国立大学法人三重大学 ３−５族窒化物半導体積層基板、３−５族窒化物半導体自立基板の製造方法、及び半導体素子
US20070007232A1 (en) * 2005-07-07 2007-01-11 Manera David A Moisture-tight safety closure and container
DE102005041643A1 (de) 2005-08-29 2007-03-01 Forschungsverbund Berlin E.V. Halbleitersubstrat sowie Verfahren und Maskenschicht zur Herstellung eines freistehenden Halbleitersubstrats mittels der Hydrid-Gasphasenepitaxie
TWI519686B (zh) 2005-12-15 2016-02-01 聖戈班晶體探測器公司 低差排密度氮化鎵（ＧａＮ）之生長方法
CN1988109B (zh) 2005-12-21 2012-03-21 弗赖贝格化合物原料有限公司 生产自支撑iii-n层和自支撑iii-n基底的方法
US9406505B2 (en) 2006-02-23 2016-08-02 Allos Semiconductors Gmbh Nitride semiconductor component and process for its production
SG170031A1 (en) * 2006-02-23 2011-04-29 Azzurro Semiconductors Ag Nitride semiconductor component and process for its production
DE102006008929A1 (de) 2006-02-23 2007-08-30 Azzurro Semiconductors Ag Nitridhalbleiter-Bauelement und Verfahren zu seiner Herstellung
GB2436398B (en) 2006-03-23 2011-08-24 Univ Bath Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials
US7663148B2 (en) * 2006-12-22 2010-02-16 Philips Lumileds Lighting Company, Llc III-nitride light emitting device with reduced strain light emitting layer
GB0701069D0 (en) 2007-01-19 2007-02-28 Univ Bath Nanostructure template and production of semiconductors using the template
GB0702560D0 (en) 2007-02-09 2007-03-21 Univ Bath Production of Semiconductor devices
US8362503B2 (en) 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
JP2009170895A (ja) * 2007-12-18 2009-07-30 Rohm Co Ltd 窒化物半導体装置及び半導体レーザ
US20110127544A1 (en) * 2008-05-06 2011-06-02 Kyma Technologies Group iii nitride templates and related heterostructures, devices, and methods for making them
GB2460898B (en) 2008-06-19 2012-10-10 Wang Nang Wang Production of semiconductor material and devices using oblique angle etched templates
US20110140072A1 (en) * 2008-08-21 2011-06-16 Nanocrystal Corporation Defect-free group iii - nitride nanostructures and devices using pulsed and non-pulsed growth techniques
JP2010132473A (ja) * 2008-12-02 2010-06-17 Sumitomo Electric Ind Ltd 窒化ガリウム結晶の成長方法および窒化ガリウム結晶の製造方法
EP2299236B1 (en) 2009-09-17 2013-04-10 LayTec Aktiengesellschaft Method and apparatus for real-time determination of curvature and azimuthal asymmetry of a surface
CN102208338B (zh) * 2010-03-30 2014-04-23 杭州海鲸光电科技有限公司 蓝宝石基复合衬底及其制造方法
CN102268767A (zh) 2010-06-02 2011-12-07 蒋迎辉 一种吸湿排汗纬弹纱卡面料
WO2012035135A1 (de) 2010-09-19 2012-03-22 Osram Opto Semiconductors Gmbh Halbleiterchip und verfahren zu dessen herstellung
GB2485418B (en) 2010-11-15 2014-10-01 Dandan Zhu Semiconductor materials
DE102010056409A1 (de) 2010-12-26 2012-06-28 Azzurro Semiconductors Ag Gruppe-III-Nitrid basierte Schichtenfolge, Halbleiterbauelement, umfassend eine Gruppe-III-Nitrid basierte Schichtenfolge und Verfahren zur Herstellung
GB2488587B (en) 2011-03-03 2015-07-29 Seren Photonics Ltd Semiconductor devices and fabrication methods
JP5491465B2 (ja) * 2011-07-26 2014-05-14 株式会社アドバンテスト スイッチ装置、スイッチ装置の製造方法、伝送路切替装置、および試験装置
US9165766B2 (en) * 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates

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US20190276950A1 (en) 2019-09-12
US20180237944A1 (en) 2018-08-23
EP2815004A1 (de) 2014-12-24
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US10883191B2 (en) 2021-01-05
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US9896779B2 (en) 2018-02-20
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CN104364879B (zh) 2017-06-06
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