CN101654805B - 一种单晶向、柱状大晶粒的铸造多晶硅的制备方法 - Google Patents
一种单晶向、柱状大晶粒的铸造多晶硅的制备方法 Download PDFInfo
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- CN101654805B CN101654805B CN2009101529702A CN200910152970A CN101654805B CN 101654805 B CN101654805 B CN 101654805B CN 2009101529702 A CN2009101529702 A CN 2009101529702A CN 200910152970 A CN200910152970 A CN 200910152970A CN 101654805 B CN101654805 B CN 101654805B
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- 239000013078 crystal Substances 0.000 title claims abstract description 64
- 238000005266 casting Methods 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 36
- 229920005591 polysilicon Polymers 0.000 title claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- 239000002994 raw material Substances 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 239000004484 Briquette Substances 0.000 claims description 25
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 239000002826 coolant Substances 0.000 claims description 6
- 239000000112 cooling gas Substances 0.000 claims description 3
- 239000000498 cooling water Substances 0.000 claims description 3
- 239000000155 melt Substances 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 7
- 210000002268 wool Anatomy 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 7
- 235000008216 herbs Nutrition 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000003518 caustics Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000013083 solar photovoltaic technology Methods 0.000 description 1
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- Silicon Compounds (AREA)
Abstract
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CN2009101529702A CN101654805B (zh) | 2009-09-24 | 2009-09-24 | 一种单晶向、柱状大晶粒的铸造多晶硅的制备方法 |
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CN2009101529702A CN101654805B (zh) | 2009-09-24 | 2009-09-24 | 一种单晶向、柱状大晶粒的铸造多晶硅的制备方法 |
Publications (2)
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CN101654805A CN101654805A (zh) | 2010-02-24 |
CN101654805B true CN101654805B (zh) | 2011-09-14 |
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CN2009101529702A Expired - Fee Related CN101654805B (zh) | 2009-09-24 | 2009-09-24 | 一种单晶向、柱状大晶粒的铸造多晶硅的制备方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102534772A (zh) * | 2012-02-28 | 2012-07-04 | 江苏协鑫硅材料科技发展有限公司 | 一种生长大晶粒铸造多晶硅的方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101864594A (zh) * | 2010-06-10 | 2010-10-20 | 晶海洋半导体材料(东海)有限公司 | 一种准单晶硅的铸锭方法 |
WO2011156976A1 (zh) * | 2010-06-19 | 2011-12-22 | 常州天合光能有限公司 | 多晶硅的铸锭方法 |
CN101935867A (zh) * | 2010-09-17 | 2011-01-05 | 浙江大学 | 一种生长大晶粒铸造多晶硅的方法 |
CN101935868A (zh) * | 2010-09-17 | 2011-01-05 | 浙江大学 | 一种用于生长大晶粒铸造多晶硅的坩埚 |
DE102011086669B4 (de) * | 2011-11-18 | 2016-08-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung von Silizium-Blöcken sowie Silizium-Block |
CN103205807A (zh) * | 2011-12-28 | 2013-07-17 | 江苏有能光电科技有限公司 | 一种制备准单晶硅的铸锭炉及制备准单晶硅的方法 |
KR101656596B1 (ko) * | 2012-04-01 | 2016-09-09 | 장 시 사이 웨이 엘디케이 솔라 하이-테크 컴퍼니 리미티드 | 다결정 실리콘 잉곳, 이의 제조 방법 및 다결정 실리콘 웨이퍼 |
CN102653881A (zh) * | 2012-04-20 | 2012-09-05 | 镇江环太硅科技有限公司 | 一种铸造大晶粒硅锭的方法 |
CN102776557A (zh) * | 2012-08-16 | 2012-11-14 | 江西旭阳雷迪高科技股份有限公司 | 一种用碎硅片作为籽晶来铸造多晶硅锭的方法 |
CN103361724A (zh) * | 2013-06-21 | 2013-10-23 | 东海晶澳太阳能科技有限公司 | 硼-镓共掺高效多晶硅及其制备方法 |
CN103757689A (zh) * | 2013-12-31 | 2014-04-30 | 浙江大学 | 一种利用单晶硅籽晶诱导生长铸造单晶硅的方法及产品 |
CN105316758A (zh) * | 2015-11-11 | 2016-02-10 | 常州天合光能有限公司 | 一种籽晶的铺设方法及铸锭单晶生长方法 |
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2009
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102534772A (zh) * | 2012-02-28 | 2012-07-04 | 江苏协鑫硅材料科技发展有限公司 | 一种生长大晶粒铸造多晶硅的方法 |
CN102534772B (zh) * | 2012-02-28 | 2014-11-05 | 江苏协鑫硅材料科技发展有限公司 | 一种生长大晶粒铸造多晶硅的方法 |
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CN101654805A (zh) | 2010-02-24 |
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Assignee: JIANGSU GCL SILICON MATERIAL TECHNOLOGY DEVELOPMENT Co.,Ltd. Assignor: Zhejiang University Contract record no.: 2012330000133 Denomination of invention: Preparation method of casting columnar multi-crystal silicon with large crystal grains in single crystal direction Granted publication date: 20110914 License type: Common License Open date: 20100224 Record date: 20120401 |
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