KR101426329B1 - 고체 이미지 센서, 이의 제조 방법 및 카메라 - Google Patents

고체 이미지 센서, 이의 제조 방법 및 카메라 Download PDF

Info

Publication number
KR101426329B1
KR101426329B1 KR1020110134411A KR20110134411A KR101426329B1 KR 101426329 B1 KR101426329 B1 KR 101426329B1 KR 1020110134411 A KR1020110134411 A KR 1020110134411A KR 20110134411 A KR20110134411 A KR 20110134411A KR 101426329 B1 KR101426329 B1 KR 101426329B1
Authority
KR
South Korea
Prior art keywords
semiconductor region
conductivity type
region
image sensor
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020110134411A
Other languages
English (en)
Korean (ko)
Other versions
KR20120067298A (ko
Inventor
마히또 시노하라
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20120067298A publication Critical patent/KR20120067298A/ko
Application granted granted Critical
Publication of KR101426329B1 publication Critical patent/KR101426329B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020110134411A 2010-12-15 2011-12-14 고체 이미지 센서, 이의 제조 방법 및 카메라 Expired - Fee Related KR101426329B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-279873 2010-12-15
JP2010279873A JP5767465B2 (ja) 2010-12-15 2010-12-15 固体撮像装置およびその製造方法ならびにカメラ

Publications (2)

Publication Number Publication Date
KR20120067298A KR20120067298A (ko) 2012-06-25
KR101426329B1 true KR101426329B1 (ko) 2014-08-06

Family

ID=45044456

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110134411A Expired - Fee Related KR101426329B1 (ko) 2010-12-15 2011-12-14 고체 이미지 센서, 이의 제조 방법 및 카메라

Country Status (6)

Country Link
US (1) US8896734B2 (enExample)
EP (1) EP2466641B1 (enExample)
JP (1) JP5767465B2 (enExample)
KR (1) KR101426329B1 (enExample)
CN (1) CN102544036B (enExample)
RU (1) RU2499325C2 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102709304B (zh) * 2012-06-26 2013-06-19 天津大学 提高图像传感器满阱容量与量子效率光电二极管及方法
JP6055270B2 (ja) 2012-10-26 2016-12-27 キヤノン株式会社 固体撮像装置、その製造方法、およびカメラ
US20140246561A1 (en) * 2013-03-04 2014-09-04 Omnivision Technologies, Inc. High dynamic range pixel having a plurality of photodiodes with a single implant
JP2015026677A (ja) * 2013-07-25 2015-02-05 株式会社東芝 固体撮像装置
JP2015177034A (ja) 2014-03-14 2015-10-05 キヤノン株式会社 固体撮像装置、その製造方法、及びカメラ
JP6406911B2 (ja) * 2014-07-24 2018-10-17 キヤノン株式会社 撮像装置及び撮像装置の製造方法
JP6799739B2 (ja) * 2016-03-30 2020-12-16 株式会社ブルックマンテクノロジ 光検出素子及び固体撮像装置
US10157941B2 (en) * 2016-11-17 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor and fabrication method thereof
JP6552479B2 (ja) 2016-12-28 2019-07-31 キヤノン株式会社 固体撮像装置及び撮像システム
JP6840555B2 (ja) * 2017-01-30 2021-03-10 キヤノン株式会社 固体撮像装置及び撮像システム
JP6949563B2 (ja) * 2017-06-02 2021-10-13 キヤノン株式会社 固体撮像装置、撮像システム及び移動体
JP6953263B2 (ja) 2017-10-05 2021-10-27 キヤノン株式会社 固体撮像装置および撮像システム
JP7108421B2 (ja) 2018-02-15 2022-07-28 キヤノン株式会社 撮像装置及び撮像システム
JP7134781B2 (ja) 2018-08-17 2022-09-12 キヤノン株式会社 光電変換装置及び撮像システム
JP2020088293A (ja) * 2018-11-29 2020-06-04 キヤノン株式会社 光電変換装置、光電変換システム、移動体
US11503234B2 (en) 2019-02-27 2022-11-15 Canon Kabushiki Kaisha Photoelectric conversion device, imaging system, radioactive ray imaging system, and movable object
JP7576928B2 (ja) * 2020-05-08 2024-11-01 浜松ホトニクス株式会社 光検出装置、及び光センサの駆動方法
JP7652543B2 (ja) 2020-07-29 2025-03-27 キヤノン株式会社 光電変換装置
JP7534902B2 (ja) 2020-09-23 2024-08-15 キヤノン株式会社 光電変換装置、撮像装置、半導体装置及び光電変換システム
JP2023023218A (ja) 2021-08-04 2023-02-16 キヤノン株式会社 光電変換装置
JP2024004306A (ja) 2022-06-28 2024-01-16 キヤノン株式会社 光電変換装置
JP2024017294A (ja) 2022-07-27 2024-02-08 キヤノン株式会社 光電変換装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7334211B1 (en) * 2004-12-30 2008-02-19 Ess Technology, Inc. Method for designing a CMOS sensor using parameters
JP2008078302A (ja) 2006-09-20 2008-04-03 Canon Inc 撮像装置および撮像システム
US20090086066A1 (en) * 2007-09-28 2009-04-02 Sony Corporation Solid-state imaging device, method of manufacturing the same, and camera
US20100002108A1 (en) 2008-07-02 2010-01-07 Sony Corporation Solid state imaging device, method for producing the same, and electronic apparatus

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0812905B2 (ja) 1986-07-11 1996-02-07 キヤノン株式会社 光電変換装置及びその製造方法
JPH0812906B2 (ja) 1986-07-11 1996-02-07 キヤノン株式会社 光電変換装置の製造方法
DE3856165T2 (de) 1987-01-29 1998-08-27 Canon Kk Photovoltaischer Wandler
JP4131031B2 (ja) 1998-03-17 2008-08-13 ソニー株式会社 受光素子を有する半導体装置、光学ピックアップ装置、および受光素子を有する半導体装置の製造方法
US6690423B1 (en) * 1998-03-19 2004-02-10 Kabushiki Kaisha Toshiba Solid-state image pickup apparatus
US6346722B1 (en) 1998-06-26 2002-02-12 Nec Corporation Solid state imaging device and method for manufacturing the same
JP3460225B2 (ja) 2000-04-06 2003-10-27 日本電気株式会社 電荷結合素子及びその製造法
JP3647390B2 (ja) 2000-06-08 2005-05-11 キヤノン株式会社 電荷転送装置、固体撮像装置及び撮像システム
CN1225897C (zh) 2002-08-21 2005-11-02 佳能株式会社 摄像装置
US7078745B2 (en) * 2003-03-05 2006-07-18 Micron Technology, Inc. CMOS imager with enhanced transfer of charge and low voltage operation
US6921934B2 (en) * 2003-03-28 2005-07-26 Micron Technology, Inc. Double pinned photodiode for CMOS APS and method of formation
JP4194544B2 (ja) 2003-12-05 2008-12-10 キヤノン株式会社 固体撮像装置及び固体撮像装置の駆動方法
JP2006032681A (ja) * 2004-07-16 2006-02-02 Sony Corp 半導体装置および物理情報取得装置並びに半導体装置の駆動方法
US7250665B1 (en) * 2004-12-30 2007-07-31 Ess Technology, Inc. Method and apparatus for removing electrons from CMOS sensor photodetectors
US7141836B1 (en) 2005-05-31 2006-11-28 International Business Machines Corporation Pixel sensor having doped isolation structure sidewall
US7795655B2 (en) 2006-10-04 2010-09-14 Sony Corporation Solid-state imaging device and electronic device
CN100517651C (zh) 2006-12-15 2009-07-22 中芯国际集成电路制造(上海)有限公司 Cmos图像传感器的像素单元的形成方法
JP5324056B2 (ja) 2007-05-16 2013-10-23 株式会社デンソー 固体撮像装置及びその駆動方法
JP5365144B2 (ja) 2008-11-06 2013-12-11 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP2010147193A (ja) 2008-12-17 2010-07-01 Sharp Corp 固体撮像装置およびその製造方法、並びに電子情報機器
JP5558857B2 (ja) * 2009-03-09 2014-07-23 キヤノン株式会社 光電変換装置およびそれを用いた撮像システム
JP5493430B2 (ja) 2009-03-31 2014-05-14 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5489570B2 (ja) 2009-07-27 2014-05-14 キヤノン株式会社 光電変換装置及び撮像システム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7334211B1 (en) * 2004-12-30 2008-02-19 Ess Technology, Inc. Method for designing a CMOS sensor using parameters
JP2008078302A (ja) 2006-09-20 2008-04-03 Canon Inc 撮像装置および撮像システム
US20090086066A1 (en) * 2007-09-28 2009-04-02 Sony Corporation Solid-state imaging device, method of manufacturing the same, and camera
US20100002108A1 (en) 2008-07-02 2010-01-07 Sony Corporation Solid state imaging device, method for producing the same, and electronic apparatus

Also Published As

Publication number Publication date
RU2499325C2 (ru) 2013-11-20
US20120154650A1 (en) 2012-06-21
JP5767465B2 (ja) 2015-08-19
RU2011151087A (ru) 2013-06-20
EP2466641A1 (en) 2012-06-20
CN102544036B (zh) 2016-01-13
CN102544036A (zh) 2012-07-04
JP2012129371A (ja) 2012-07-05
KR20120067298A (ko) 2012-06-25
US8896734B2 (en) 2014-11-25
EP2466641B1 (en) 2019-03-27

Similar Documents

Publication Publication Date Title
KR101426329B1 (ko) 고체 이미지 센서, 이의 제조 방법 및 카메라
JP4802520B2 (ja) 固体撮像装置及びその製造方法
US9806121B2 (en) Solid-state imaging device
US7898000B2 (en) Solid-state image pickup device and method for producing the same
JP3702854B2 (ja) 固体撮像素子
US8754458B2 (en) Semiconductor device, manufacturing method thereof, solid-state imaging device, manufacturing method thereof, and electronic unit
CN103688359B (zh) 固态成像装置及其驱动方法、固态成像装置的制造方法以及电子信息设备
US8710613B2 (en) Pickup device and method for manufacturing the same
JP5508355B2 (ja) 固体撮像装置およびその製造方法、並びに電子情報機器
US7427740B2 (en) Image sensor with drain region between optical black regions
US7875916B2 (en) Photodetector and n-layer structure for improved collection efficiency
US20070069260A1 (en) Photodetector structure for improved collection efficiency
JP2002134731A (ja) 光電変換素子および固体撮像素子
JP2010171042A (ja) 半導体装置及びその製造方法
HK1171571B (en) Solid-state image pickup device and method for manufacturing same

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20180625

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20220730

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20220730

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000