KR101414343B1 - 포토마스크의 제조 방법, 포토마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법 - Google Patents

포토마스크의 제조 방법, 포토마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법 Download PDF

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KR101414343B1
KR101414343B1 KR1020130112126A KR20130112126A KR101414343B1 KR 101414343 B1 KR101414343 B1 KR 101414343B1 KR 1020130112126 A KR1020130112126 A KR 1020130112126A KR 20130112126 A KR20130112126 A KR 20130112126A KR 101414343 B1 KR101414343 B1 KR 101414343B1
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film
light
translucent
semi
photomask
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KR20140040645A (ko
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노보루 야마구찌
슈헤이 고바야시
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020130112126A 2012-09-26 2013-09-17 포토마스크의 제조 방법, 포토마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법 Active KR101414343B1 (ko)

Applications Claiming Priority (2)

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JP2012212030A JP5635577B2 (ja) 2012-09-26 2012-09-26 フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
JPJP-P-2012-212030 2012-09-26

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KR20140040645A KR20140040645A (ko) 2014-04-03
KR101414343B1 true KR101414343B1 (ko) 2014-07-02

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JP (1) JP5635577B2 (enrdf_load_stackoverflow)
KR (1) KR101414343B1 (enrdf_load_stackoverflow)
CN (1) CN103676468B (enrdf_load_stackoverflow)
TW (1) TWI477891B (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102157644B1 (ko) * 2014-08-13 2020-09-21 (주)에스앤에스텍 다계조 포토 마스크 및 그의 제조 방법
JP2016224289A (ja) * 2015-06-01 2016-12-28 Hoya株式会社 フォトマスクの製造方法、フォトマスク及び表示装置の製造方法
JP6767735B2 (ja) * 2015-06-30 2020-10-14 Hoya株式会社 フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法
JP6514143B2 (ja) * 2016-05-18 2019-05-15 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
JP6556673B2 (ja) 2016-07-26 2019-08-07 Hoya株式会社 フォトマスクの製造方法、描画装置、表示装置の製造方法、フォトマスク基板の検査方法、及びフォトマスク基板の検査装置
TW201823855A (zh) * 2016-09-21 2018-07-01 日商Ｈｏｙａ股份有限公司 光罩之製造方法、光罩、及顯示裝置之製造方法
CN106991931B (zh) * 2017-05-11 2019-07-23 武汉华星光电技术有限公司 显示面板及其膜层检测系统
CN111965887A (zh) * 2020-09-18 2020-11-20 信利(仁寿)高端显示科技有限公司 一种掩膜版的制作方法及彩膜基板的制作工艺
JP2023071123A (ja) * 2021-11-10 2023-05-22 株式会社エスケーエレクトロニクス フォトマスクブランクスの製造方法及びフォトマスクの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009192927A (ja) 2008-02-15 2009-08-27 Hoya Corp 多階調フォトマスク及びそれを用いたパターン転写方法
JP2009258250A (ja) 2008-04-15 2009-11-05 Hoya Corp 多階調フォトマスク、多階調フォトマスクの製造方法、パターン転写方法、及び薄膜トランジスタの製造方法
KR20100127718A (ko) * 2009-05-26 2010-12-06 호야 가부시키가이샤 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 및 패턴 전사 방법
KR20100131404A (ko) * 2006-02-20 2010-12-15 호야 가부시키가이샤 4계조 포토마스크 및 그 사용 방법

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1325994A (zh) * 2000-05-31 2001-12-12 上海博德基因开发有限公司 一种新的多肽——丝氨酸蛋白酶12和编码这种多肽的多核苷酸
JP3875648B2 (ja) * 2003-04-08 2007-01-31 Ｈｏｙａ株式会社 グレートーンマスクの欠陥検査方法
JP4393290B2 (ja) * 2003-06-30 2010-01-06 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法
TWI286663B (en) * 2003-06-30 2007-09-11 Hoya Corp Method for manufacturing gray tone mask, and gray tone mask
JP2006030320A (ja) * 2004-07-12 2006-02-02 Hoya Corp グレートーンマスク及びグレートーンマスクの製造方法
JP4587837B2 (ja) * 2005-02-18 2010-11-24 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及びグレートーンマスク
US7914971B2 (en) * 2005-08-12 2011-03-29 Semiconductor Energy Laboratory Co., Ltd. Light exposure mask and method for manufacturing semiconductor device using the same
CN1740909B (zh) * 2005-09-26 2011-04-13 友达光电股份有限公司 光罩及其制造方法
KR101319659B1 (ko) * 2005-12-26 2013-10-17 호야 가부시키가이샤 포토마스크 블랭크 및 포토마스크의 제조 방법과 반도체장치의 제조 방법
KR101255616B1 (ko) * 2006-07-28 2013-04-16 삼성디스플레이 주식회사 다중톤 광마스크, 이의 제조방법 및 이를 이용한박막트랜지스터 기판의 제조방법
JP5036328B2 (ja) * 2007-01-24 2012-09-26 Ｈｏｙａ株式会社 グレートーンマスク及びパターン転写方法
JP5036349B2 (ja) * 2007-02-28 2012-09-26 Ｈｏｙａ株式会社 グレートーンマスクの欠陥修正方法及びグレートーンマスクの製造方法
US7924423B2 (en) * 2008-08-11 2011-04-12 Ut-Battelle, Llc Reverse photoacoustic standoff spectroscopy
JP4849276B2 (ja) * 2008-08-15 2012-01-11 信越化学工業株式会社 グレートーンマスクブランク、グレートーンマスク、及び製品加工標識又は製品情報標識の形成方法
KR20100138381A (ko) * 2009-06-25 2010-12-31 엘지이노텍 주식회사 하프톤 마스크의 제조 방법
JP5409238B2 (ja) * 2009-09-29 2014-02-05 Ｈｏｙａ株式会社 フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置用画素電極の製造方法
JP2011081326A (ja) * 2009-10-10 2011-04-21 Hoya Corp 多階調フォトマスクの製造方法及び多階調フォトマスク用ブランク、並びに電子デバイスの製造方法
TWI461833B (zh) * 2010-03-15 2014-11-21 Hoya Corp 多調式光罩、多調式光罩之製造方法及圖案轉印方法
JP5123349B2 (ja) * 2010-04-19 2013-01-23 Ｈｏｙａ株式会社 多階調マスクの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100131404A (ko) * 2006-02-20 2010-12-15 호야 가부시키가이샤 4계조 포토마스크 및 그 사용 방법
JP2009192927A (ja) 2008-02-15 2009-08-27 Hoya Corp 多階調フォトマスク及びそれを用いたパターン転写方法
JP2009258250A (ja) 2008-04-15 2009-11-05 Hoya Corp 多階調フォトマスク、多階調フォトマスクの製造方法、パターン転写方法、及び薄膜トランジスタの製造方法
KR20100127718A (ko) * 2009-05-26 2010-12-06 호야 가부시키가이샤 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 및 패턴 전사 방법

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CN103676468A (zh) 2014-03-26
JP5635577B2 (ja) 2014-12-03
KR20140040645A (ko) 2014-04-03
JP2014066863A (ja) 2014-04-17
TW201418873A (zh) 2014-05-16
CN103676468B (zh) 2015-03-11
TWI477891B (zh) 2015-03-21

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