TWI477891B - 光罩之製造方法、光罩、圖案轉印方法、及平板顯示器之製造方法 - Google Patents
光罩之製造方法、光罩、圖案轉印方法、及平板顯示器之製造方法 Download PDFInfo
- Publication number
- TWI477891B TWI477891B TW102133708A TW102133708A TWI477891B TW I477891 B TWI477891 B TW I477891B TW 102133708 A TW102133708 A TW 102133708A TW 102133708 A TW102133708 A TW 102133708A TW I477891 B TWI477891 B TW I477891B
- Authority
- TW
- Taiwan
- Prior art keywords
- semi
- transmissive
- film
- transmissive film
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 68
- 238000012546 transfer Methods 0.000 title claims description 59
- 238000000034 method Methods 0.000 title claims description 36
- 239000000758 substrate Substances 0.000 claims description 54
- 238000005530 etching Methods 0.000 claims description 45
- 238000002834 transmittance Methods 0.000 claims description 32
- 230000002093 peripheral effect Effects 0.000 claims description 14
- 230000000903 blocking effect Effects 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- 238000000926 separation method Methods 0.000 claims description 10
- 239000010408 film Substances 0.000 description 259
- 230000007547 defect Effects 0.000 description 18
- 238000007689 inspection Methods 0.000 description 11
- 238000009826 distribution Methods 0.000 description 10
- 238000013461 design Methods 0.000 description 8
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 239000011651 chromium Substances 0.000 description 7
- 230000005856 abnormality Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000012467 final product Substances 0.000 description 6
- 230000010363 phase shift Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 229910016006 MoSi Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000013041 optical simulation Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- -1 nitrogen oxide carbides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012212030A JP5635577B2 (ja) | 2012-09-26 | 2012-09-26 | フォトマスクの製造方法、フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201418873A TW201418873A (zh) | 2014-05-16 |
| TWI477891B true TWI477891B (zh) | 2015-03-21 |
Family
ID=50314471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102133708A TWI477891B (zh) | 2012-09-26 | 2013-09-17 | 光罩之製造方法、光罩、圖案轉印方法、及平板顯示器之製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5635577B2 (enrdf_load_stackoverflow) |
| KR (1) | KR101414343B1 (enrdf_load_stackoverflow) |
| CN (1) | CN103676468B (enrdf_load_stackoverflow) |
| TW (1) | TWI477891B (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102157644B1 (ko) * | 2014-08-13 | 2020-09-21 | (주)에스앤에스텍 | 다계조 포토 마스크 및 그의 제조 방법 |
| JP2016224289A (ja) * | 2015-06-01 | 2016-12-28 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク及び表示装置の製造方法 |
| JP6767735B2 (ja) * | 2015-06-30 | 2020-10-14 | Hoya株式会社 | フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法 |
| JP6514143B2 (ja) * | 2016-05-18 | 2019-05-15 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法 |
| JP6556673B2 (ja) | 2016-07-26 | 2019-08-07 | Hoya株式会社 | フォトマスクの製造方法、描画装置、表示装置の製造方法、フォトマスク基板の検査方法、及びフォトマスク基板の検査装置 |
| TW201823855A (zh) * | 2016-09-21 | 2018-07-01 | 日商Ｈｏｙａ股份有限公司 | 光罩之製造方法、光罩、及顯示裝置之製造方法 |
| CN106991931B (zh) * | 2017-05-11 | 2019-07-23 | 武汉华星光电技术有限公司 | 显示面板及其膜层检测系统 |
| CN111965887A (zh) * | 2020-09-18 | 2020-11-20 | 信利(仁寿)高端显示科技有限公司 | 一种掩膜版的制作方法及彩膜基板的制作工艺 |
| JP2023071123A (ja) * | 2021-11-10 | 2023-05-22 | 株式会社エスケーエレクトロニクス | フォトマスクブランクスの製造方法及びフォトマスクの製造方法 |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1325994A (zh) * | 2000-05-31 | 2001-12-12 | 上海博德基因开发有限公司 | 一种新的多肽——丝氨酸蛋白酶12和编码这种多肽的多核苷酸 |
| TW200702899A (en) * | 2005-02-18 | 2007-01-16 | Hoya Corp | Method for manufacturing gray scale mask and gray scale mask |
| US20070037070A1 (en) * | 2005-08-12 | 2007-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Light exposure mask and method for manufacturing semiconductor device using the same |
| TW200914989A (en) * | 2007-01-24 | 2009-04-01 | Hoya Corp | Gray tone mask and pattern transfer method |
| US20100033720A1 (en) * | 2008-08-11 | 2010-02-11 | Ut-Battelle, Llc | Reverse photoacoustic standoff spectroscopy |
| JP2010044274A (ja) * | 2008-08-15 | 2010-02-25 | Shin-Etsu Chemical Co Ltd | グレートーンマスクブランク、グレートーンマスク、及び製品加工標識又は製品情報標識の形成方法 |
| TW201109835A (en) * | 2009-06-25 | 2011-03-16 | Lg Innotek Co Ltd | Manufacturing method of half tone mask |
| CN1740909B (zh) * | 2005-09-26 | 2011-04-13 | 友达光电股份有限公司 | 光罩及其制造方法 |
| TW201128296A (en) * | 2009-09-29 | 2011-08-16 | Hoya Corp | Photomask, method of manufacturing a photomask, pattern transfer method and method of producing a liquid crystal display device |
| TW201131283A (en) * | 2009-10-10 | 2011-09-16 | Hoya Corp | Method of manufacturing a multi-tone photomask, multi-tone photomask blank and method of manufacturing an electronic device |
| TW201214512A (en) * | 2010-04-19 | 2012-04-01 | Hoya Corp | Method of manufacturing a multi-tone photomask and etching device |
| TW201214021A (en) * | 2010-03-15 | 2012-04-01 | Hoya Corp | Multi-tone photomask, method of manufacturing a multi-tone photomask, and pattern transfer method |
| JP2012108533A (ja) * | 2005-12-26 | 2012-06-07 | Hoya Corp | フォトマスクブランク及びフォトマスクの製造方法、並びに半導体装置の製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3875648B2 (ja) * | 2003-04-08 | 2007-01-31 | Ｈｏｙａ株式会社 | グレートーンマスクの欠陥検査方法 |
| JP4393290B2 (ja) * | 2003-06-30 | 2010-01-06 | Ｈｏｙａ株式会社 | グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法 |
| TWI286663B (en) * | 2003-06-30 | 2007-09-11 | Hoya Corp | Method for manufacturing gray tone mask, and gray tone mask |
| JP2006030320A (ja) * | 2004-07-12 | 2006-02-02 | Hoya Corp | グレートーンマスク及びグレートーンマスクの製造方法 |
| CN101025564B (zh) * | 2006-02-20 | 2010-12-15 | Hoya株式会社 | 四级光掩模制造方法和其中所使用的光掩模坯料 |
| KR101255616B1 (ko) * | 2006-07-28 | 2013-04-16 | 삼성디스플레이 주식회사 | 다중톤 광마스크, 이의 제조방법 및 이를 이용한박막트랜지스터 기판의 제조방법 |
| JP5036349B2 (ja) * | 2007-02-28 | 2012-09-26 | Ｈｏｙａ株式会社 | グレートーンマスクの欠陥修正方法及びグレートーンマスクの製造方法 |
| JP5108551B2 (ja) | 2008-02-15 | 2012-12-26 | Ｈｏｙａ株式会社 | 多階調フォトマスク及びそれを用いたパターン転写方法 |
| JP5160286B2 (ja) | 2008-04-15 | 2013-03-13 | Ｈｏｙａ株式会社 | 多階調フォトマスク、パターン転写方法、及び薄膜トランジスタの製造方法 |
| JP2010276724A (ja) * | 2009-05-26 | 2010-12-09 | Hoya Corp | 多階調フォトマスク、多階調フォトマスクの製造方法、及びパターン転写方法 |
-
2012
- 2012-09-26 JP JP2012212030A patent/JP5635577B2/ja active Active
-
2013
- 2013-09-17 KR KR1020130112126A patent/KR101414343B1/ko active Active
- 2013-09-17 TW TW102133708A patent/TWI477891B/zh active
- 2013-09-24 CN CN201310439264.2A patent/CN103676468B/zh active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1325994A (zh) * | 2000-05-31 | 2001-12-12 | 上海博德基因开发有限公司 | 一种新的多肽——丝氨酸蛋白酶12和编码这种多肽的多核苷酸 |
| TW200702899A (en) * | 2005-02-18 | 2007-01-16 | Hoya Corp | Method for manufacturing gray scale mask and gray scale mask |
| US20070037070A1 (en) * | 2005-08-12 | 2007-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Light exposure mask and method for manufacturing semiconductor device using the same |
| CN1740909B (zh) * | 2005-09-26 | 2011-04-13 | 友达光电股份有限公司 | 光罩及其制造方法 |
| JP2012108533A (ja) * | 2005-12-26 | 2012-06-07 | Hoya Corp | フォトマスクブランク及びフォトマスクの製造方法、並びに半導体装置の製造方法 |
| TW200914989A (en) * | 2007-01-24 | 2009-04-01 | Hoya Corp | Gray tone mask and pattern transfer method |
| US20100033720A1 (en) * | 2008-08-11 | 2010-02-11 | Ut-Battelle, Llc | Reverse photoacoustic standoff spectroscopy |
| JP2010044274A (ja) * | 2008-08-15 | 2010-02-25 | Shin-Etsu Chemical Co Ltd | グレートーンマスクブランク、グレートーンマスク、及び製品加工標識又は製品情報標識の形成方法 |
| TW201109835A (en) * | 2009-06-25 | 2011-03-16 | Lg Innotek Co Ltd | Manufacturing method of half tone mask |
| TW201128296A (en) * | 2009-09-29 | 2011-08-16 | Hoya Corp | Photomask, method of manufacturing a photomask, pattern transfer method and method of producing a liquid crystal display device |
| TW201131283A (en) * | 2009-10-10 | 2011-09-16 | Hoya Corp | Method of manufacturing a multi-tone photomask, multi-tone photomask blank and method of manufacturing an electronic device |
| TW201214021A (en) * | 2010-03-15 | 2012-04-01 | Hoya Corp | Multi-tone photomask, method of manufacturing a multi-tone photomask, and pattern transfer method |
| TW201214512A (en) * | 2010-04-19 | 2012-04-01 | Hoya Corp | Method of manufacturing a multi-tone photomask and etching device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103676468A (zh) | 2014-03-26 |
| JP5635577B2 (ja) | 2014-12-03 |
| KR101414343B1 (ko) | 2014-07-02 |
| KR20140040645A (ko) | 2014-04-03 |
| JP2014066863A (ja) | 2014-04-17 |
| TW201418873A (zh) | 2014-05-16 |
| CN103676468B (zh) | 2015-03-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI477891B (zh) | 光罩之製造方法、光罩、圖案轉印方法、及平板顯示器之製造方法 | |
| TWI499860B (zh) | 光罩之製造方法、光罩、圖案轉印方法及平面顯示器之製造方法 | |
| KR101624436B1 (ko) | 대형 위상 시프트 마스크 및 대형 위상 시프트 마스크의 제조 방법 | |
| TWI541588B (zh) | 顯示裝置製造用光罩、及圖案轉印方法 | |
| JP2014066863A5 (enrdf_load_stackoverflow) | ||
| CN107402496B (zh) | 光掩模的制造方法、光掩模及显示装置的制造方法 | |
| JP2009053683A (ja) | グレートーンマスクの製造方法及びグレートーンマスク、グレートーンマスクの検査方法、並びにパターン転写方法 | |
| TWI598681B (zh) | 光罩之製造方法、光罩、及顯示裝置之製造方法 | |
| TW201624106A (zh) | 光罩之製造方法及顯示裝置之製造方法 | |
| JP4714311B2 (ja) | 多階調フォトマスクの製造方法及び薄膜トランジスタ基板用パターン転写方法 | |
| TWI422963B (zh) | 多階調光罩及其製造方法、及圖案轉印方法 | |
| JP2009237419A (ja) | 多階調フォトマスク及びその製造方法、並びにパターン転写方法 | |
| KR101742358B1 (ko) | 포토마스크의 제조 방법, 포토마스크 및 패턴 전사 방법 | |
| JP2007279710A (ja) | パターン形成方法及びグレートーンマスクの製造方法 | |
| TW202131091A (zh) | 光罩、光罩之製造方法、顯示裝置用元件之製造方法 | |
| TWI597560B (zh) | 光罩之製造方法、光罩及平面顯示器之製造方法 | |
| JP2009237315A (ja) | 多階調フォトマスクの製造方法及び多階調フォトマスク、並びにパターン転写方法 | |
| JP2007248943A (ja) | パターン形成方法及びグレートーンマスクの製造方法 | |
| TWI495929B (zh) | 光罩之製造方法、圖案轉印方法及顯示裝置之製造方法 | |
| JP2009229893A (ja) | 多階調フォトマスクの製造方法及びパターン転写方法 | |
| JP2009237491A (ja) | フォトマスクの欠陥修正方法及びフォトマスクの製造方法、並びにパターン転写方法 | |
| JP4848071B2 (ja) | ５階調フォトマスクの製造方法及びパターン転写方法 | |
| JP2010204692A (ja) | 薄膜トランジスタ基板の製造方法 | |
| JP4792148B2 (ja) | ５階調フォトマスクの製造方法及びパターン転写方法 | |
| JP4714312B2 (ja) | 多階調フォトマスク及び多階調フォトマスクの製造方法 |