KR101396850B1 - 종형 열처리용 보트와, 반도체 웨이퍼의 열처리 방법 - Google Patents

종형 열처리용 보트와, 반도체 웨이퍼의 열처리 방법 Download PDF

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KR101396850B1
KR101396850B1 KR1020097018865A KR20097018865A KR101396850B1 KR 101396850 B1 KR101396850 B1 KR 101396850B1 KR 1020097018865 A KR1020097018865 A KR 1020097018865A KR 20097018865 A KR20097018865 A KR 20097018865A KR 101396850 B1 KR101396850 B1 KR 101396850B1
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South Korea
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support
supporting
heat treatment
portions
boat
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Korean (ko)
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KR20100014966A (ko
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타케시 고바야시
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신에쯔 한도타이 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020097018865A 2007-03-12 2008-02-28 종형 열처리용 보트와, 반도체 웨이퍼의 열처리 방법 Active KR101396850B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007061632A JP5061663B2 (ja) 2007-03-12 2007-03-12 縦型熱処理用ボートおよび半導体ウエーハの熱処理方法
JPJP-P-2007-061632 2007-03-12
PCT/JP2008/000384 WO2008111286A1 (ja) 2007-03-12 2008-02-28 縦型熱処理用ボートおよび半導体ウエーハの熱処理方法

Publications (2)

Publication Number Publication Date
KR20100014966A KR20100014966A (ko) 2010-02-11
KR101396850B1 true KR101396850B1 (ko) 2014-05-20

Family

ID=39759230

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097018865A Active KR101396850B1 (ko) 2007-03-12 2008-02-28 종형 열처리용 보트와, 반도체 웨이퍼의 열처리 방법

Country Status (6)

Country Link
US (1) US8003918B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP5061663B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR101396850B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE112008000667B4 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW200903701A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
WO (1) WO2008111286A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5071217B2 (ja) * 2008-04-17 2012-11-14 信越半導体株式会社 縦型熱処理用ボートおよびそれを用いたシリコンウエーハの熱処理方法
CN102639724B (zh) * 2009-09-02 2013-11-06 本田技研工业株式会社 传送架、用于保持金属环的方法
US20170110353A1 (en) * 2015-10-20 2017-04-20 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer boat, annealing tool and annealing method
WO2018189870A1 (ja) * 2017-04-13 2018-10-18 株式会社ニコン 情報処理装置、プログラム、作業工程生成装置
US11521876B2 (en) * 2018-03-07 2022-12-06 Tokyo Electron Limited Horizontal substrate boat
EP4386819A1 (de) 2022-12-15 2024-06-19 Siltronic AG Verfahren zum testen der widerstandsfähigkeit von halbleiterscheiben aus einkristallinem silizium gegen thermisch induzierte versetzungen

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020068267A (ko) * 2001-02-20 2002-08-27 미쓰비시덴키 가부시키가이샤 기판 열처리용 보유 지지구, 기판 열처리 장치 및 기판열처리용 보유 지지구의 제조 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3328763B2 (ja) * 1995-10-30 2002-09-30 エヌティティエレクトロニクス株式会社 縦型ウエハボートのウエハ支持構造
JP3505934B2 (ja) * 1996-09-10 2004-03-15 東京エレクトロン株式会社 被処理体の支持構造及び熱処理装置
JP3692812B2 (ja) 1998-06-04 2005-09-07 信越半導体株式会社 窒素ドープした低欠陥シリコン単結晶ウエーハおよびその製造方法
US6077343A (en) * 1998-06-04 2000-06-20 Shin-Etsu Handotai Co., Ltd. Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it
JP2000150402A (ja) * 1998-11-09 2000-05-30 Shin Etsu Handotai Co Ltd 基板支持治具
JP2001168175A (ja) * 1999-12-07 2001-06-22 Semiconductor Leading Edge Technologies Inc 熱処理用基板保持具、基板熱処理装置および基板の熱処理方法
JP4396105B2 (ja) * 2003-02-05 2010-01-13 信越半導体株式会社 縦型熱処理用ボート及び半導体ウエーハの熱処理方法
JP4857517B2 (ja) 2003-11-26 2012-01-18 信越半導体株式会社 アニールウエーハ及びアニールウエーハの製造方法
JP2005203648A (ja) 2004-01-19 2005-07-28 Shin Etsu Handotai Co Ltd シリコンウエーハの熱処理用縦型ボート及び熱処理方法
JP2006128316A (ja) * 2004-10-27 2006-05-18 Shin Etsu Handotai Co Ltd 熱処理用縦型ボートおよび熱処理方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020068267A (ko) * 2001-02-20 2002-08-27 미쓰비시덴키 가부시키가이샤 기판 열처리용 보유 지지구, 기판 열처리 장치 및 기판열처리용 보유 지지구의 제조 방법

Also Published As

Publication number Publication date
US20100015817A1 (en) 2010-01-21
JP2008227056A (ja) 2008-09-25
TWI376011B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2012-11-01
DE112008000667B4 (de) 2022-03-17
JP5061663B2 (ja) 2012-10-31
TW200903701A (en) 2009-01-16
KR20100014966A (ko) 2010-02-11
DE112008000667T5 (de) 2010-01-21
WO2008111286A1 (ja) 2008-09-18
US8003918B2 (en) 2011-08-23

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