KR101384320B1 - 초임계 처리 장치, 기판 처리 시스템 및 초임계 처리 방법 - Google Patents

초임계 처리 장치, 기판 처리 시스템 및 초임계 처리 방법 Download PDF

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KR101384320B1
KR101384320B1 KR1020090130685A KR20090130685A KR101384320B1 KR 101384320 B1 KR101384320 B1 KR 101384320B1 KR 1020090130685 A KR1020090130685 A KR 1020090130685A KR 20090130685 A KR20090130685 A KR 20090130685A KR 101384320 B1 KR101384320 B1 KR 101384320B1
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processing
state
substrate
liquid
fluid
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KR20100081925A (ko
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다카유키 도시마
가즈오 데라다
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/80—Cleaning only by supercritical fluids

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  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020090130685A 2009-01-07 2009-12-24 초임계 처리 장치, 기판 처리 시스템 및 초임계 처리 방법 Active KR101384320B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009001786A JP5359286B2 (ja) 2009-01-07 2009-01-07 超臨界処理装置、基板処理システム及び超臨界処理方法
JPJP-P-2009-001786 2009-01-07

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KR20100081925A KR20100081925A (ko) 2010-07-15
KR101384320B1 true KR101384320B1 (ko) 2014-04-14

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US (1) US9076643B2 (https=)
JP (1) JP5359286B2 (https=)
KR (1) KR101384320B1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11410862B2 (en) 2018-04-30 2022-08-09 Semes Co., Ltd. Apparatus for processing substrate including cooling member closer to central axis than heating member
US12463061B2 (en) 2021-06-22 2025-11-04 Samsung Electronics Co., Ltd. Wafer drying apparatus, wafer processing system including the same, and wafer processing method using the same

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5506461B2 (ja) * 2010-03-05 2014-05-28 東京エレクトロン株式会社 超臨界処理装置及び超臨界処理方法
KR20120028672A (ko) * 2010-09-15 2012-03-23 삼성전자주식회사 기판 처리 장치 및 이를 이용한 기판 처리 방법
JP5620234B2 (ja) 2010-11-15 2014-11-05 株式会社東芝 半導体基板の超臨界乾燥方法および基板処理装置
JP5450494B2 (ja) 2011-03-25 2014-03-26 株式会社東芝 半導体基板の超臨界乾燥方法
JP5985156B2 (ja) * 2011-04-04 2016-09-06 東京エレクトロン株式会社 半導体基板の超臨界乾燥方法及び装置
WO2012165377A1 (ja) * 2011-05-30 2012-12-06 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
KR101572746B1 (ko) 2011-05-30 2015-11-27 도쿄엘렉트론가부시키가이샤 기판 처리 방법, 기판 처리 장치 및 기억 매체
JP6085423B2 (ja) * 2011-05-30 2017-02-22 株式会社東芝 基板処理方法、基板処理装置および記憶媒体
JP6085424B2 (ja) * 2011-05-30 2017-02-22 株式会社東芝 基板処理方法、基板処理装置および記憶媒体
JP5843277B2 (ja) 2011-07-19 2016-01-13 株式会社東芝 半導体基板の超臨界乾燥方法及び装置
KR101874901B1 (ko) 2011-12-07 2018-07-06 삼성전자주식회사 기판 건조 장치 및 방법
JP6068029B2 (ja) 2012-07-18 2017-01-25 株式会社東芝 基板処理方法、基板処理装置および記憶媒体
JP6400919B2 (ja) * 2013-03-07 2018-10-03 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
KR102037844B1 (ko) * 2013-03-12 2019-11-27 삼성전자주식회사 초임계 유체를 이용하는 기판 처리 장치, 이를 포함하는 기판 처리 시스템, 및 기판 처리 방법
JP6005702B2 (ja) * 2014-09-18 2016-10-12 株式会社東芝 半導体基板の超臨界乾燥方法および基板処理装置
JP5897690B1 (ja) * 2014-11-10 2016-03-30 株式会社オティックス 軸受装置
JP6441176B2 (ja) * 2015-07-10 2018-12-19 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
US10566182B2 (en) 2016-03-02 2020-02-18 Tokyo Electron Limited Substrate processing apparatus, substrate processing method, and storage medium
JP6532834B2 (ja) * 2016-03-02 2019-06-19 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに記録媒体
US20180323063A1 (en) * 2017-05-03 2018-11-08 Applied Materials, Inc. Method and apparatus for using supercritical fluids in semiconductor applications
KR102358561B1 (ko) * 2017-06-08 2022-02-04 삼성전자주식회사 기판 처리 장치 및 집적회로 소자 제조 장치
KR102434561B1 (ko) * 2017-06-29 2022-08-23 주식회사 케이씨텍 기판처리장치 및 기판처리방법
JP6925219B2 (ja) * 2017-09-29 2021-08-25 東京エレクトロン株式会社 基板処理装置
TWI831656B (zh) * 2018-01-04 2024-02-01 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
KR102163293B1 (ko) * 2018-10-10 2020-10-08 (주)엘케이시스템즈 반도체 기판 플럭스 세정 시스템
JP7224246B2 (ja) * 2019-06-28 2023-02-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP7493325B2 (ja) * 2019-11-25 2024-05-31 東京エレクトロン株式会社 基板処理装置
JP7517856B2 (ja) 2020-04-02 2024-07-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR102622983B1 (ko) 2020-07-10 2024-01-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102603680B1 (ko) * 2020-12-28 2023-11-20 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102609394B1 (ko) * 2021-05-31 2023-12-06 세메스 주식회사 기판 처리 장치
KR102643365B1 (ko) * 2021-09-03 2024-03-07 세메스 주식회사 기판 처리 장치 및 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002313773A (ja) 2001-04-11 2002-10-25 Nippon Telegr & Teleph Corp <Ntt> 超臨界乾燥方法
KR20030020251A (ko) * 2001-09-03 2003-03-08 동경 엘렉트론 주식회사 기판처리방법 및 기판처리장치
JP2005175178A (ja) 2003-12-11 2005-06-30 Hitachi Sci Syst Ltd 超臨界流体処理装置及びその方法
JP2007049065A (ja) 2005-08-12 2007-02-22 Ntt Advanced Technology Corp 超臨界処理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1939836A (en) * 1930-01-02 1933-12-19 Edward R Tolfree Apparatus for flushing water cooling systems
JPH09232271A (ja) 1996-02-20 1997-09-05 Sharp Corp 半導体ウェハの洗浄装置
JP3979764B2 (ja) 2000-04-28 2007-09-19 大日本スクリーン製造株式会社 基板熱処理装置
KR100488376B1 (ko) * 2001-04-27 2005-05-11 가부시키가이샤 고베 세이코쇼 기판 처리 방법 및 기판 처리 설비
US6742279B2 (en) * 2002-01-16 2004-06-01 Applied Materials Inc. Apparatus and method for rinsing substrates
JP4230830B2 (ja) 2003-06-13 2009-02-25 日本電信電話株式会社 超臨界処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002313773A (ja) 2001-04-11 2002-10-25 Nippon Telegr & Teleph Corp <Ntt> 超臨界乾燥方法
KR20030020251A (ko) * 2001-09-03 2003-03-08 동경 엘렉트론 주식회사 기판처리방법 및 기판처리장치
JP2005175178A (ja) 2003-12-11 2005-06-30 Hitachi Sci Syst Ltd 超臨界流体処理装置及びその方法
JP2007049065A (ja) 2005-08-12 2007-02-22 Ntt Advanced Technology Corp 超臨界処理装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11410862B2 (en) 2018-04-30 2022-08-09 Semes Co., Ltd. Apparatus for processing substrate including cooling member closer to central axis than heating member
US12463061B2 (en) 2021-06-22 2025-11-04 Samsung Electronics Co., Ltd. Wafer drying apparatus, wafer processing system including the same, and wafer processing method using the same
KR102948305B1 (ko) * 2021-06-22 2026-04-07 삼성전자주식회사 기판 건조 장치, 이를 포함하는 기판 처리 장치 및 이를 이용한 기판 처리 방법

Also Published As

Publication number Publication date
JP2010161165A (ja) 2010-07-22
KR20100081925A (ko) 2010-07-15
JP5359286B2 (ja) 2013-12-04
US9076643B2 (en) 2015-07-07
US20110000507A1 (en) 2011-01-06

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