KR101375887B1 - 소스-드레인간 직통 전류 경로를 갖는 횡형 트랜치 게이트 전계효과 트랜지스터 - Google Patents

소스-드레인간 직통 전류 경로를 갖는 횡형 트랜치 게이트 전계효과 트랜지스터 Download PDF

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KR101375887B1
KR101375887B1 KR1020097000131A KR20097000131A KR101375887B1 KR 101375887 B1 KR101375887 B1 KR 101375887B1 KR 1020097000131 A KR1020097000131 A KR 1020097000131A KR 20097000131 A KR20097000131 A KR 20097000131A KR 101375887 B1 KR101375887 B1 KR 101375887B1
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South Korea
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silicon layers
region
trench gate
conductivity type
stacked silicon
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KR20090031548A (ko
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전창기
게리 돌니
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페어차일드 세미컨덕터 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/658—Lateral DMOS [LDMOS] FETs having trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

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  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020097000131A 2006-06-29 2007-06-25 소스-드레인간 직통 전류 경로를 갖는 횡형 트랜치 게이트 전계효과 트랜지스터 Active KR101375887B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/479,149 2006-06-29
US11/479,149 US7804150B2 (en) 2006-06-29 2006-06-29 Lateral trench gate FET with direct source-drain current path
PCT/US2007/072034 WO2008002879A2 (en) 2006-06-29 2007-06-25 Lateral trench gate fet with direct source-drain current path

Publications (2)

Publication Number Publication Date
KR20090031548A KR20090031548A (ko) 2009-03-26
KR101375887B1 true KR101375887B1 (ko) 2014-03-18

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KR1020097000131A Active KR101375887B1 (ko) 2006-06-29 2007-06-25 소스-드레인간 직통 전류 경로를 갖는 횡형 트랜치 게이트 전계효과 트랜지스터

Country Status (7)

Country Link
US (2) US7804150B2 (https=)
JP (1) JP2009543353A (https=)
KR (1) KR101375887B1 (https=)
CN (1) CN101479851B (https=)
DE (1) DE112007001578T5 (https=)
TW (1) TW200810121A (https=)
WO (1) WO2008002879A2 (https=)

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US7804150B2 (en) 2006-06-29 2010-09-28 Fairchild Semiconductor Corporation Lateral trench gate FET with direct source-drain current path
US8674434B2 (en) 2008-03-24 2014-03-18 Micron Technology, Inc. Impact ionization devices
KR101418398B1 (ko) * 2008-07-04 2014-07-11 페어차일드코리아반도체 주식회사 필드 형성층을 구비하는 고전압 반도체소자 및 그 제조방법
US8482065B2 (en) * 2008-11-25 2013-07-09 Newport Fab, Llc MOS transistor with a reduced on-resistance and area product
US8004051B2 (en) 2009-02-06 2011-08-23 Texas Instruments Incorporated Lateral trench MOSFET having a field plate
US7943445B2 (en) 2009-02-19 2011-05-17 International Business Machines Corporation Asymmetric junction field effect transistor
US20120044796A1 (en) 2009-04-10 2012-02-23 Pantech Co., Ltd. Method for generating signal pattern using modulus or sequence, and device thereof
US8575695B2 (en) * 2009-11-30 2013-11-05 Alpha And Omega Semiconductor Incorporated Lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diode
JP5636254B2 (ja) 2009-12-15 2014-12-03 株式会社東芝 半導体装置
CN101916783B (zh) * 2010-08-13 2012-07-04 复旦大学 一种凹陷沟道的横向和纵向扩散型场效应晶体管及其制造方法
CN103035674B (zh) * 2012-10-22 2015-10-14 上海华虹宏力半导体制造有限公司 射频横向双扩散场效应晶体管及其制造方法
US9059324B2 (en) * 2013-06-30 2015-06-16 Texas Instruments Incorporated Bi-directional ESD diode structure with ultra-low capacitance that consumes a small amount of silicon real estate
EP3024018B1 (en) * 2013-07-19 2018-08-08 Nissan Motor Co., Ltd Semiconductor device
CN103762241B (zh) * 2014-01-02 2016-08-24 杭州电子科技大学 一种梳状栅纵向沟道soi ldmos单元
JP6340200B2 (ja) * 2014-01-27 2018-06-06 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10186573B2 (en) * 2015-09-14 2019-01-22 Maxpower Semiconductor, Inc. Lateral power MOSFET with non-horizontal RESURF structure
US10243039B2 (en) * 2016-03-22 2019-03-26 General Electric Company Super-junction semiconductor power devices with fast switching capability
US11329150B2 (en) * 2020-04-14 2022-05-10 Nxp Usa, Inc. Termination for trench field plate power MOSFET
US11837658B1 (en) * 2022-06-21 2023-12-05 K. Eklund Innovation Semiconductor device comprising a lateral super junction field effect transistor
US20230411447A1 (en) * 2022-06-21 2023-12-21 K. Eklund Innovation Semiconductor device comprising a lateral super junction field effect transistor

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JPH09266311A (ja) * 1996-01-22 1997-10-07 Fuji Electric Co Ltd 半導体装置及びその製造方法
JP2001274398A (ja) * 1999-10-19 2001-10-05 Denso Corp 半導体装置及びその製造方法
JP2002076339A (ja) * 2000-09-05 2002-03-15 Fuji Electric Co Ltd 超接合半導体素子
JP2004006731A (ja) * 2002-03-27 2004-01-08 Toshiba Corp 電界効果型トランジスタおよびその応用装置

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US4626879A (en) * 1982-12-21 1986-12-02 North American Philips Corporation Lateral double-diffused MOS transistor devices suitable for source-follower applications
US5640034A (en) * 1992-05-18 1997-06-17 Texas Instruments Incorporated Top-drain trench based resurf DMOS transistor structure
US5422502A (en) * 1993-12-09 1995-06-06 Northern Telecom Limited Lateral bipolar transistor
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JP4590884B2 (ja) * 2003-06-13 2010-12-01 株式会社デンソー 半導体装置およびその製造方法
US7126166B2 (en) 2004-03-11 2006-10-24 Semiconductor Components Industries, L.L.C. High voltage lateral FET structure with improved on resistance performance
KR101254835B1 (ko) * 2005-05-26 2013-04-15 페어차일드 세미컨덕터 코포레이션 트랜치-게이트 전계 효과 트랜지스터 및 그 형성 방법
US7804150B2 (en) 2006-06-29 2010-09-28 Fairchild Semiconductor Corporation Lateral trench gate FET with direct source-drain current path

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Publication number Priority date Publication date Assignee Title
JPH09266311A (ja) * 1996-01-22 1997-10-07 Fuji Electric Co Ltd 半導体装置及びその製造方法
JP2001274398A (ja) * 1999-10-19 2001-10-05 Denso Corp 半導体装置及びその製造方法
JP2002076339A (ja) * 2000-09-05 2002-03-15 Fuji Electric Co Ltd 超接合半導体素子
JP2004006731A (ja) * 2002-03-27 2004-01-08 Toshiba Corp 電界効果型トランジスタおよびその応用装置

Also Published As

Publication number Publication date
WO2008002879A3 (en) 2008-08-07
US20080001198A1 (en) 2008-01-03
US20110014760A1 (en) 2011-01-20
TW200810121A (en) 2008-02-16
KR20090031548A (ko) 2009-03-26
CN101479851B (zh) 2011-01-12
WO2008002879A2 (en) 2008-01-03
CN101479851A (zh) 2009-07-08
DE112007001578T5 (de) 2009-05-14
JP2009543353A (ja) 2009-12-03
US8097510B2 (en) 2012-01-17
US7804150B2 (en) 2010-09-28

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