KR101330084B1 - 반도체 장치의 테스트 구조물, 그 형성 방법, 반도체 장치및 이의 제조 방법 - Google Patents

반도체 장치의 테스트 구조물, 그 형성 방법, 반도체 장치및 이의 제조 방법 Download PDF

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KR101330084B1
KR101330084B1 KR1020070071708A KR20070071708A KR101330084B1 KR 101330084 B1 KR101330084 B1 KR 101330084B1 KR 1020070071708 A KR1020070071708 A KR 1020070071708A KR 20070071708 A KR20070071708 A KR 20070071708A KR 101330084 B1 KR101330084 B1 KR 101330084B1
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South Korea
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transistor
gate line
dummy
region
pad
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KR1020070071708A
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English (en)
Korean (ko)
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KR20090008626A (ko
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정세영
김지혜
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삼성전자주식회사
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Priority to KR1020070071708A priority Critical patent/KR101330084B1/ko
Priority to JP2008187486A priority patent/JP5379418B2/ja
Priority to US12/175,492 priority patent/US7851864B2/en
Publication of KR20090008626A publication Critical patent/KR20090008626A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020070071708A 2007-07-18 2007-07-18 반도체 장치의 테스트 구조물, 그 형성 방법, 반도체 장치및 이의 제조 방법 Expired - Fee Related KR101330084B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020070071708A KR101330084B1 (ko) 2007-07-18 2007-07-18 반도체 장치의 테스트 구조물, 그 형성 방법, 반도체 장치및 이의 제조 방법
JP2008187486A JP5379418B2 (ja) 2007-07-18 2008-07-18 半導体装置のテスト構造物
US12/175,492 US7851864B2 (en) 2007-07-18 2008-07-18 Test structure of a semiconductor device and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070071708A KR101330084B1 (ko) 2007-07-18 2007-07-18 반도체 장치의 테스트 구조물, 그 형성 방법, 반도체 장치및 이의 제조 방법

Publications (2)

Publication Number Publication Date
KR20090008626A KR20090008626A (ko) 2009-01-22
KR101330084B1 true KR101330084B1 (ko) 2013-11-18

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KR1020070071708A Expired - Fee Related KR101330084B1 (ko) 2007-07-18 2007-07-18 반도체 장치의 테스트 구조물, 그 형성 방법, 반도체 장치및 이의 제조 방법

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US (1) US7851864B2 (enExample)
JP (1) JP5379418B2 (enExample)
KR (1) KR101330084B1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8723177B2 (en) 2011-12-06 2014-05-13 Globalfoundries Inc. Electrical test structure for devices employing high-k dielectrics or metal gates
US8766256B2 (en) 2012-06-12 2014-07-01 Taiwan Semiconductor Manufacturing Co., Ltd. SiGe SRAM butted contact resistance improvement
KR20200078968A (ko) 2018-12-24 2020-07-02 에스케이하이닉스 주식회사 반도체 장치
CN112992864B (zh) * 2021-02-20 2023-12-12 长江存储科技有限责任公司 一种半导体测试结构和测试方法
US12020993B2 (en) * 2021-03-11 2024-06-25 Taiwan Semiconductor Manufacturing Company Ltd. Test structure and testing method thereof
CN115831926B (zh) * 2021-09-17 2025-09-05 长鑫存储技术有限公司 晶圆的测试结构及其制备方法
CN116936568A (zh) * 2022-04-12 2023-10-24 长鑫存储技术有限公司 半导体版图结构及半导体测试结构
CN117352496A (zh) * 2022-06-29 2024-01-05 长鑫存储技术有限公司 半导体测试结构及其制备方法、测试方法
CN115799090B (zh) * 2022-11-17 2025-05-30 长鑫存储技术有限公司 半导体结构的测试方法、半导体测试结构及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002217258A (ja) * 2001-01-22 2002-08-02 Hitachi Ltd 半導体装置およびその測定方法、ならびに半導体装置の製造方法
KR20050023719A (ko) * 2003-09-02 2005-03-10 매그나칩 반도체 유한회사 반도체 소자 및 그 제조방법
KR100498176B1 (ko) 2001-09-27 2005-07-01 미쓰비시덴키 가부시키가이샤 반도체 장치
JP2009171173A (ja) 2008-01-16 2009-07-30 Oki Semiconductor Co Ltd デジタル・アナログ変換器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3132582B2 (ja) * 1991-07-12 2001-02-05 日本電気株式会社 半導体装置
JPH11345885A (ja) 1998-06-02 1999-12-14 Nec Corp 半導体装置
KR100275964B1 (ko) 1998-12-31 2001-01-15 김영환 반도체장치의 테스트 패턴
KR20000056067A (ko) 1999-02-12 2000-09-15 윤종용 플라즈마 데미지 모니터를 위한 반도체 소자의 안테나 패턴형성방법
JP3333155B2 (ja) 1999-10-14 2002-10-07 株式会社半導体先端テクノロジーズ プラズマダメージ評価用ｔｅｇパターンおよびそれを用いた評価方法
TW473977B (en) * 2000-10-27 2002-01-21 Vanguard Int Semiconduct Corp Low-voltage triggering electrostatic discharge protection device and the associated circuit
JP4510034B2 (ja) * 2007-01-22 2010-07-21 パナソニック株式会社 半導体装置の特性評価方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002217258A (ja) * 2001-01-22 2002-08-02 Hitachi Ltd 半導体装置およびその測定方法、ならびに半導体装置の製造方法
KR100498176B1 (ko) 2001-09-27 2005-07-01 미쓰비시덴키 가부시키가이샤 반도체 장치
KR20050023719A (ko) * 2003-09-02 2005-03-10 매그나칩 반도체 유한회사 반도체 소자 및 그 제조방법
JP2009171173A (ja) 2008-01-16 2009-07-30 Oki Semiconductor Co Ltd デジタル・アナログ変換器

Also Published As

Publication number Publication date
US7851864B2 (en) 2010-12-14
JP5379418B2 (ja) 2013-12-25
US20090020755A1 (en) 2009-01-22
JP2009027169A (ja) 2009-02-05
KR20090008626A (ko) 2009-01-22

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