KR101328208B1 - 클락 및 파워 그리드 표준 셀을 사용한 ａｓｉｃ 설계 - Google Patents

클락 및 파워 그리드 표준 셀을 사용한 ａｓｉｃ 설계 Download PDF

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KR101328208B1
KR101328208B1 KR1020087017299A KR20087017299A KR101328208B1 KR 101328208 B1 KR101328208 B1 KR 101328208B1 KR 1020087017299 A KR1020087017299 A KR 1020087017299A KR 20087017299 A KR20087017299 A KR 20087017299A KR 101328208 B1 KR101328208 B1 KR 101328208B1
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grid
clock
power
design
directions
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Korean (ko)
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KR20080089597A (ko
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토니 마이
부르스 밀러
수잔 콜맨
시나 파이크
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모사이드 테크놀로지스 인코퍼레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/04—Generating or distributing clock signals or signals derived directly therefrom
    • G06F1/10—Distribution of clock signals, e.g. skew
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Evolutionary Computation (AREA)
  • Geometry (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Manipulation Of Pulses (AREA)
  • Logic Circuits (AREA)
KR1020087017299A 2005-12-29 2006-12-22 클락 및 파워 그리드 표준 셀을 사용한 ａｓｉｃ 설계 Expired - Fee Related KR101328208B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/322,160 2005-12-29
US11/322,160 US7761831B2 (en) 2005-12-29 2005-12-29 ASIC design using clock and power grid standard cell
PCT/CA2006/002118 WO2007073599A1 (en) 2005-12-29 2006-12-22 Asic design using clock and power grid standard cell

Publications (2)

Publication Number Publication Date
KR20080089597A KR20080089597A (ko) 2008-10-07
KR101328208B1 true KR101328208B1 (ko) 2013-11-14

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Country Status (7)

Country Link
US (1) US7761831B2 (https=)
EP (1) EP1974382A4 (https=)
JP (1) JP5171639B2 (https=)
KR (1) KR101328208B1 (https=)
CN (1) CN101351886B (https=)
TW (1) TWI444841B (https=)
WO (1) WO2007073599A1 (https=)

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US11120190B2 (en) * 2017-11-21 2021-09-14 Advanced Micro Devices, Inc. Metal zero power ground stub route to reduce cell area and improve cell placement at the chip level
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Also Published As

Publication number Publication date
JP2009521811A (ja) 2009-06-04
WO2007073599A1 (en) 2007-07-05
EP1974382A1 (en) 2008-10-01
JP5171639B2 (ja) 2013-03-27
CN101351886B (zh) 2012-05-09
TW200809560A (en) 2008-02-16
US7761831B2 (en) 2010-07-20
KR20080089597A (ko) 2008-10-07
US20070157144A1 (en) 2007-07-05
TWI444841B (zh) 2014-07-11
EP1974382A4 (en) 2010-11-03
CN101351886A (zh) 2009-01-21

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