KR101285576B1 - 비휘발성 메모리를 프로그래밍／소거하기 위한 방법 및 장치 - Google Patents

비휘발성 메모리를 프로그래밍／소거하기 위한 방법 및 장치 Download PDF

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KR101285576B1
KR101285576B1 KR1020087012943A KR20087012943A KR101285576B1 KR 101285576 B1 KR101285576 B1 KR 101285576B1 KR 1020087012943 A KR1020087012943 A KR 1020087012943A KR 20087012943 A KR20087012943 A KR 20087012943A KR 101285576 B1 KR101285576 B1 KR 101285576B1
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voltage
erase
nvm
read current
verify
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Korean (ko)
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KR20080080511A (ko
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모하메드 수하일
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프리스케일 세미컨덕터, 인크.
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention

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  • Read Only Memory (AREA)
KR1020087012943A 2005-11-30 2006-11-08 비휘발성 메모리를 프로그래밍／소거하기 위한 방법 및 장치 Expired - Fee Related KR101285576B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/290,321 2005-11-30
US11/290,321 US7236402B2 (en) 2005-11-30 2005-11-30 Method and apparatus for programming/erasing a non-volatile memory
PCT/US2006/060671 WO2007111688A2 (en) 2005-11-30 2006-11-08 Method and apparatus for programming/erasing a non-volatile memory

Publications (2)

Publication Number Publication Date
KR20080080511A KR20080080511A (ko) 2008-09-04
KR101285576B1 true KR101285576B1 (ko) 2013-07-15

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KR1020087012943A Expired - Fee Related KR101285576B1 (ko) 2005-11-30 2006-11-08 비휘발성 메모리를 프로그래밍／소거하기 위한 방법 및 장치

Country Status (6)

Country Link
US (1) US7236402B2 (enExample)
JP (1) JP5160441B2 (enExample)
KR (1) KR101285576B1 (enExample)
CN (1) CN101317231B (enExample)
TW (1) TWI435330B (enExample)
WO (1) WO2007111688A2 (enExample)

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FR2874732A1 (fr) * 2004-08-31 2006-03-03 St Microelectronics Sa Procede de programmation de cellules memoire incluant une detection des degradations de transconductance
US7397703B2 (en) * 2006-03-21 2008-07-08 Freescale Semiconductor, Inc. Non-volatile memory with controlled program/erase
US20090199058A1 (en) * 2008-02-06 2009-08-06 Christoph Seidl Programmable memory with reliability testing of the stored data
US7903462B1 (en) * 2008-04-04 2011-03-08 Link A Media Devices Corporation E/P durability by using a sub-range of a full programming range
KR101423612B1 (ko) * 2008-09-16 2014-07-25 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 동작 방법, 그리고 그것을포함하는 메모리 시스템
KR101005117B1 (ko) * 2009-01-23 2011-01-04 주식회사 하이닉스반도체 불휘발성 메모리 장치의 동작 방법
KR101038991B1 (ko) * 2009-03-10 2011-06-03 주식회사 하이닉스반도체 메모리 영역의 균등한 사용을 위한 반도체 스토리지 시스템및 그 제어 방법
US8264890B2 (en) * 2009-04-09 2012-09-11 Sandisk Technologies Inc. Two pass erase for non-volatile storage
KR20110126408A (ko) 2010-05-17 2011-11-23 삼성전자주식회사 비휘발성 메모리 장치, 그것을 포함한 메모리 시스템 및 그것의 프로그램 방법
CN102034539A (zh) * 2010-10-25 2011-04-27 上海宏力半导体制造有限公司 纳米晶体器件编程/擦除的方法
US8705283B2 (en) * 2011-07-13 2014-04-22 Vincenzo Ferragina Erase techniques and circuits therefor for non-volatile memory devices
CN103390424A (zh) * 2012-05-08 2013-11-13 北京兆易创新科技股份有限公司 一种存储器的擦除/编程方法及装置
CN103632725B (zh) * 2012-08-24 2016-08-10 北京兆易创新科技股份有限公司 一种快闪存储器的擦除方法和装置
US9225356B2 (en) * 2012-11-12 2015-12-29 Freescale Semiconductor, Inc. Programming a non-volatile memory (NVM) system having error correction code (ECC)
US9564216B2 (en) * 2015-01-30 2017-02-07 Macronix International Co., Ltd. Stress trim and modified ISPP procedures for PCM
US9679652B2 (en) * 2015-05-04 2017-06-13 Phison Electronics Corp. Threshold based multi-level cell programming for reliability improvement
CN107665724A (zh) * 2016-07-27 2018-02-06 北京兆易创新科技股份有限公司 一种存储单元的擦除方法
US10297324B2 (en) * 2017-05-25 2019-05-21 Western Digital Technologies, Inc. Physical secure erase of solid state drives
US20240177788A1 (en) * 2022-11-30 2024-05-30 Sandisk Technologies Llc Adaptive erase voltages for non-volatile memory

Citations (1)

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Publication number Priority date Publication date Assignee Title
US20030076710A1 (en) 2001-10-24 2003-04-24 Yair Sofer Method for erasing a memory cell

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US4943948A (en) * 1986-06-05 1990-07-24 Motorola, Inc. Program check for a non-volatile memory
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5268319A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5361227A (en) * 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
JP3348466B2 (ja) * 1992-06-09 2002-11-20 セイコーエプソン株式会社 不揮発性半導体装置
JPH10228784A (ja) * 1997-02-12 1998-08-25 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP3781240B2 (ja) * 1998-09-07 2006-05-31 株式会社ルネサステクノロジ 不揮発性半導体メモリおよびそれを内蔵した半導体集積回路
US6400603B1 (en) * 2000-05-03 2002-06-04 Advanced Technology Materials, Inc. Electronically-eraseable programmable read-only memory having reduced-page-size program and erase
JP2001319486A (ja) * 2000-05-12 2001-11-16 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2002100192A (ja) * 2000-09-22 2002-04-05 Toshiba Corp 不揮発性半導体メモリ
JP4040405B2 (ja) * 2002-09-20 2008-01-30 富士通株式会社 不揮発性半導体記憶セルの制御方法、および不揮発性半導体記憶装置
KR100496866B1 (ko) * 2002-12-05 2005-06-22 삼성전자주식회사 미프로그램된 셀들 및 과프로그램된 셀들 없이 균일한문턱 전압 분포를 갖는 플레쉬 메모리 장치 및 그프로그램 검증 방법
JP4426868B2 (ja) * 2003-04-04 2010-03-03 株式会社ルネサステクノロジ 不揮発性半導体記憶装置および半導体集積回路装置
JP2005276428A (ja) * 2005-04-11 2005-10-06 Toshiba Corp 不揮発性半導体記憶装置

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Publication number Priority date Publication date Assignee Title
US20030076710A1 (en) 2001-10-24 2003-04-24 Yair Sofer Method for erasing a memory cell

Also Published As

Publication number Publication date
KR20080080511A (ko) 2008-09-04
JP2009518766A (ja) 2009-05-07
JP5160441B2 (ja) 2013-03-13
TWI435330B (zh) 2014-04-21
CN101317231B (zh) 2012-03-07
US20070121387A1 (en) 2007-05-31
WO2007111688A3 (en) 2008-04-24
US7236402B2 (en) 2007-06-26
WO2007111688A2 (en) 2007-10-04
CN101317231A (zh) 2008-12-03
TW200733117A (en) 2007-09-01

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