TWI435330B - 用於程式化／抹除非揮發性記憶體之方法及裝置 - Google Patents

用於程式化／抹除非揮發性記憶體之方法及裝置 Download PDF

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Publication number
TWI435330B
TWI435330B TW095141602A TW95141602A TWI435330B TW I435330 B TWI435330 B TW I435330B TW 095141602 A TW095141602 A TW 095141602A TW 95141602 A TW95141602 A TW 95141602A TW I435330 B TWI435330 B TW I435330B
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TW
Taiwan
Prior art keywords
voltage
erase
read current
nvm
read
Prior art date
Application number
TW095141602A
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English (en)
Chinese (zh)
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TW200733117A (en
Inventor
Mohammed Suhail
Original Assignee
Freescale Semiconductor Inc
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Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200733117A publication Critical patent/TW200733117A/zh
Application granted granted Critical
Publication of TWI435330B publication Critical patent/TWI435330B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention

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  • Read Only Memory (AREA)
TW095141602A 2005-11-30 2006-11-10 用於程式化／抹除非揮發性記憶體之方法及裝置 TWI435330B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/290,321 US7236402B2 (en) 2005-11-30 2005-11-30 Method and apparatus for programming/erasing a non-volatile memory

Publications (2)

Publication Number Publication Date
TW200733117A TW200733117A (en) 2007-09-01
TWI435330B true TWI435330B (zh) 2014-04-21

Family

ID=38087275

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095141602A TWI435330B (zh) 2005-11-30 2006-11-10 用於程式化／抹除非揮發性記憶體之方法及裝置

Country Status (6)

Country Link
US (1) US7236402B2 (enExample)
JP (1) JP5160441B2 (enExample)
KR (1) KR101285576B1 (enExample)
CN (1) CN101317231B (enExample)
TW (1) TWI435330B (enExample)
WO (1) WO2007111688A2 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2874732A1 (fr) * 2004-08-31 2006-03-03 St Microelectronics Sa Procede de programmation de cellules memoire incluant une detection des degradations de transconductance
US7397703B2 (en) * 2006-03-21 2008-07-08 Freescale Semiconductor, Inc. Non-volatile memory with controlled program/erase
US20090199058A1 (en) * 2008-02-06 2009-08-06 Christoph Seidl Programmable memory with reliability testing of the stored data
US7903462B1 (en) * 2008-04-04 2011-03-08 Link A Media Devices Corporation E/P durability by using a sub-range of a full programming range
KR101423612B1 (ko) * 2008-09-16 2014-07-25 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 동작 방법, 그리고 그것을포함하는 메모리 시스템
KR101005117B1 (ko) * 2009-01-23 2011-01-04 주식회사 하이닉스반도체 불휘발성 메모리 장치의 동작 방법
KR101038991B1 (ko) * 2009-03-10 2011-06-03 주식회사 하이닉스반도체 메모리 영역의 균등한 사용을 위한 반도체 스토리지 시스템및 그 제어 방법
US8264890B2 (en) * 2009-04-09 2012-09-11 Sandisk Technologies Inc. Two pass erase for non-volatile storage
KR20110126408A (ko) 2010-05-17 2011-11-23 삼성전자주식회사 비휘발성 메모리 장치, 그것을 포함한 메모리 시스템 및 그것의 프로그램 방법
CN102034539A (zh) * 2010-10-25 2011-04-27 上海宏力半导体制造有限公司 纳米晶体器件编程/擦除的方法
US8705283B2 (en) * 2011-07-13 2014-04-22 Vincenzo Ferragina Erase techniques and circuits therefor for non-volatile memory devices
CN103390424A (zh) * 2012-05-08 2013-11-13 北京兆易创新科技股份有限公司 一种存储器的擦除/编程方法及装置
CN103632725B (zh) * 2012-08-24 2016-08-10 北京兆易创新科技股份有限公司 一种快闪存储器的擦除方法和装置
US9225356B2 (en) * 2012-11-12 2015-12-29 Freescale Semiconductor, Inc. Programming a non-volatile memory (NVM) system having error correction code (ECC)
US9564216B2 (en) * 2015-01-30 2017-02-07 Macronix International Co., Ltd. Stress trim and modified ISPP procedures for PCM
US9679652B2 (en) * 2015-05-04 2017-06-13 Phison Electronics Corp. Threshold based multi-level cell programming for reliability improvement
CN107665724A (zh) * 2016-07-27 2018-02-06 北京兆易创新科技股份有限公司 一种存储单元的擦除方法
US10297324B2 (en) * 2017-05-25 2019-05-21 Western Digital Technologies, Inc. Physical secure erase of solid state drives
US20240177788A1 (en) * 2022-11-30 2024-05-30 Sandisk Technologies Llc Adaptive erase voltages for non-volatile memory

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US4943948A (en) 1986-06-05 1990-07-24 Motorola, Inc. Program check for a non-volatile memory
US5268870A (en) 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5268319A (en) 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5361227A (en) * 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
JP3348466B2 (ja) * 1992-06-09 2002-11-20 セイコーエプソン株式会社 不揮発性半導体装置
JPH10228784A (ja) * 1997-02-12 1998-08-25 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP3781240B2 (ja) * 1998-09-07 2006-05-31 株式会社ルネサステクノロジ 不揮発性半導体メモリおよびそれを内蔵した半導体集積回路
US6400603B1 (en) 2000-05-03 2002-06-04 Advanced Technology Materials, Inc. Electronically-eraseable programmable read-only memory having reduced-page-size program and erase
JP2001319486A (ja) * 2000-05-12 2001-11-16 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2002100192A (ja) * 2000-09-22 2002-04-05 Toshiba Corp 不揮発性半導体メモリ
US6643181B2 (en) 2001-10-24 2003-11-04 Saifun Semiconductors Ltd. Method for erasing a memory cell
JP4040405B2 (ja) * 2002-09-20 2008-01-30 富士通株式会社 不揮発性半導体記憶セルの制御方法、および不揮発性半導体記憶装置
KR100496866B1 (ko) * 2002-12-05 2005-06-22 삼성전자주식회사 미프로그램된 셀들 및 과프로그램된 셀들 없이 균일한문턱 전압 분포를 갖는 플레쉬 메모리 장치 및 그프로그램 검증 방법
JP4426868B2 (ja) * 2003-04-04 2010-03-03 株式会社ルネサステクノロジ 不揮発性半導体記憶装置および半導体集積回路装置
JP2005276428A (ja) * 2005-04-11 2005-10-06 Toshiba Corp 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
KR101285576B1 (ko) 2013-07-15
US7236402B2 (en) 2007-06-26
JP2009518766A (ja) 2009-05-07
CN101317231A (zh) 2008-12-03
KR20080080511A (ko) 2008-09-04
WO2007111688A2 (en) 2007-10-04
CN101317231B (zh) 2012-03-07
JP5160441B2 (ja) 2013-03-13
TW200733117A (en) 2007-09-01
WO2007111688A3 (en) 2008-04-24
US20070121387A1 (en) 2007-05-31

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