KR101283162B1 - 레이저 가공 방법 - Google Patents

레이저 가공 방법 Download PDF

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Publication number
KR101283162B1
KR101283162B1 KR1020077010657A KR20077010657A KR101283162B1 KR 101283162 B1 KR101283162 B1 KR 101283162B1 KR 1020077010657 A KR1020077010657 A KR 1020077010657A KR 20077010657 A KR20077010657 A KR 20077010657A KR 101283162 B1 KR101283162 B1 KR 101283162B1
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KR
South Korea
Prior art keywords
laser beam
processing
region
along
line
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1020077010657A
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English (en)
Korean (ko)
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KR20070084162A (ko
Inventor
코지 쿠노
다츠야 스즈키
Original Assignee
하마마츠 포토닉스 가부시키가이샤
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Publication of KR20070084162A publication Critical patent/KR20070084162A/ko
Application granted granted Critical
Publication of KR101283162B1 publication Critical patent/KR101283162B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0665—Shaping the laser beam, e.g. by masks or multi-focusing by beam condensation on the workpiece, e.g. for focusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Drying Of Semiconductors (AREA)
KR1020077010657A 2004-10-13 2005-10-05 레이저 가공 방법 Expired - Lifetime KR101283162B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00299193 2004-10-13
JP2004299193A JP4754801B2 (ja) 2004-10-13 2004-10-13 レーザ加工方法
PCT/JP2005/018464 WO2006040984A1 (ja) 2004-10-13 2005-10-05 レーザ加工方法

Publications (2)

Publication Number Publication Date
KR20070084162A KR20070084162A (ko) 2007-08-24
KR101283162B1 true KR101283162B1 (ko) 2013-07-05

Family

ID=36148279

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077010657A Expired - Lifetime KR101283162B1 (ko) 2004-10-13 2005-10-05 레이저 가공 방법

Country Status (8)

Country Link
US (1) US7608214B2 (enExample)
EP (1) EP1804280B1 (enExample)
JP (1) JP4754801B2 (enExample)
KR (1) KR101283162B1 (enExample)
CN (1) CN100472726C (enExample)
MY (1) MY141077A (enExample)
TW (1) TWI366493B (enExample)
WO (1) WO2006040984A1 (enExample)

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JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
TWI326626B (en) 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
EP1498216B1 (en) 2002-03-12 2010-12-29 Hamamatsu Photonics K.K. Method of cutting processed object
CN101335235B (zh) 2002-03-12 2010-10-13 浜松光子学株式会社 基板的分割方法
TWI520269B (zh) 2002-12-03 2016-02-01 濱松赫德尼古斯股份有限公司 Cutting method of semiconductor substrate
FR2852250B1 (fr) 2003-03-11 2009-07-24 Jean Luc Jouvin Fourreau de protection pour canule, un ensemble d'injection comportant un tel fourreau et aiguille equipee d'un tel fourreau
WO2004080643A1 (ja) 2003-03-12 2004-09-23 Hamamatsu Photonics K.K. レーザ加工方法
EP2324950B1 (en) * 2003-07-18 2013-11-06 Hamamatsu Photonics K.K. Semiconductor substrate to be cut with treated and minute cavity region, and method of cutting such substrate
JP4563097B2 (ja) 2003-09-10 2010-10-13 浜松ホトニクス株式会社 半導体基板の切断方法
JP4509578B2 (ja) 2004-01-09 2010-07-21 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4598407B2 (ja) * 2004-01-09 2010-12-15 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4601965B2 (ja) * 2004-01-09 2010-12-22 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
US8946055B2 (en) 2004-03-30 2015-02-03 Hamamatsu Photonics K.K. Laser processing method for cutting substrate and laminate part bonded to the substrate
CN101434010B (zh) * 2004-08-06 2011-04-13 浜松光子学株式会社 激光加工方法及半导体装置
JP4762653B2 (ja) * 2005-09-16 2011-08-31 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4923874B2 (ja) * 2005-11-16 2012-04-25 株式会社デンソー 半導体ウェハ
JP4907965B2 (ja) * 2005-11-25 2012-04-04 浜松ホトニクス株式会社 レーザ加工方法
JP4804911B2 (ja) * 2005-12-22 2011-11-02 浜松ホトニクス株式会社 レーザ加工装置
JP4907984B2 (ja) * 2005-12-27 2012-04-04 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップ
US7897487B2 (en) 2006-07-03 2011-03-01 Hamamatsu Photonics K.K. Laser processing method and chip
JP5183892B2 (ja) 2006-07-03 2013-04-17 浜松ホトニクス株式会社 レーザ加工方法
JP4954653B2 (ja) 2006-09-19 2012-06-20 浜松ホトニクス株式会社 レーザ加工方法
WO2008035679A1 (fr) * 2006-09-19 2008-03-27 Hamamatsu Photonics K. K. Procédé de traitement au laser et appareil de traitement au laser
JP5101073B2 (ja) * 2006-10-02 2012-12-19 浜松ホトニクス株式会社 レーザ加工装置
JP5132911B2 (ja) * 2006-10-03 2013-01-30 浜松ホトニクス株式会社 レーザ加工方法
JP4964554B2 (ja) * 2006-10-03 2012-07-04 浜松ホトニクス株式会社 レーザ加工方法
WO2008041604A1 (fr) * 2006-10-04 2008-04-10 Hamamatsu Photonics K.K. Procédé de traitement laser
JP5336054B2 (ja) * 2007-07-18 2013-11-06 浜松ホトニクス株式会社 加工情報供給装置を備える加工情報供給システム
JP4558775B2 (ja) * 2007-10-23 2010-10-06 富士通株式会社 加工装置および加工方法並びに板ばねの製造方法
JP5449665B2 (ja) 2007-10-30 2014-03-19 浜松ホトニクス株式会社 レーザ加工方法
JP5134928B2 (ja) * 2007-11-30 2013-01-30 浜松ホトニクス株式会社 加工対象物研削方法
JP5054496B2 (ja) * 2007-11-30 2012-10-24 浜松ホトニクス株式会社 加工対象物切断方法
US7931849B2 (en) * 2008-06-25 2011-04-26 Applied Micro Circuits Corporation Non-destructive laser optical integrated circuit package marking
JP5692969B2 (ja) 2008-09-01 2015-04-01 浜松ホトニクス株式会社 収差補正方法、この収差補正方法を用いたレーザ加工方法、この収差補正方法を用いたレーザ照射方法、収差補正装置、及び、収差補正プログラム
JP5254761B2 (ja) 2008-11-28 2013-08-07 浜松ホトニクス株式会社 レーザ加工装置
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EP2394775B1 (en) 2009-02-09 2019-04-03 Hamamatsu Photonics K.K. Workpiece cutting method
US8347651B2 (en) * 2009-02-19 2013-01-08 Corning Incorporated Method of separating strengthened glass
US9302346B2 (en) * 2009-03-20 2016-04-05 Corning, Incorporated Precision laser scoring
US9035216B2 (en) 2009-04-07 2015-05-19 Hamamatsu Photonics K.K. Method and device for controlling interior fractures by controlling the laser pulse width
JP5491761B2 (ja) 2009-04-20 2014-05-14 浜松ホトニクス株式会社 レーザ加工装置
JP5476063B2 (ja) * 2009-07-28 2014-04-23 浜松ホトニクス株式会社 加工対象物切断方法
JP2011189477A (ja) * 2010-03-16 2011-09-29 Disco Corp マイクロマシンデバイスの製造方法
KR20130106770A (ko) * 2010-07-26 2013-09-30 하마마츠 포토닉스 가부시키가이샤 반도체 디바이스의 제조 방법
JP2012054273A (ja) * 2010-08-31 2012-03-15 Disco Abrasive Syst Ltd ウエーハの加工方法
US8722516B2 (en) 2010-09-28 2014-05-13 Hamamatsu Photonics K.K. Laser processing method and method for manufacturing light-emitting device
TWI476064B (zh) * 2011-11-07 2015-03-11 Metal Ind Res & Dev Ct 硬脆材料切割方法
JP2013152989A (ja) * 2012-01-24 2013-08-08 Disco Abrasive Syst Ltd ウエーハの加工方法
KR101511670B1 (ko) * 2013-01-25 2015-04-13 에이엠테크놀로지 주식회사 유리 절단 장치
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JP6226803B2 (ja) * 2014-04-07 2017-11-08 株式会社ディスコ 加工方法
US10017411B2 (en) 2014-11-19 2018-07-10 Corning Incorporated Methods of separating a glass web
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US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
JP7233225B2 (ja) * 2019-01-10 2023-03-06 株式会社ディスコ ウェーハの割段方法
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
FR3099636B1 (fr) * 2019-07-31 2021-08-06 Aledia Système et procédé de traitement par laser
JP7475214B2 (ja) * 2020-06-26 2024-04-26 株式会社ディスコ 被加工物の加工方法

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JP2002192371A (ja) 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法及びレーザ加工装置
JP2002219591A (ja) 2001-01-22 2002-08-06 Toshiba Corp レーザ光照射装置
JP2003266185A (ja) 2002-03-12 2003-09-24 Hamamatsu Photonics Kk レーザ加工方法

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JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
JP2004188422A (ja) 2002-12-06 2004-07-08 Hamamatsu Photonics Kk レーザ加工装置及びレーザ加工方法
CN1529347A (zh) * 2003-10-21 2004-09-15 中国科学院上海光学精密机械研究所 蓝宝石基氮化物芯片的划片方法
JP4598407B2 (ja) 2004-01-09 2010-12-15 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4509578B2 (ja) 2004-01-09 2010-07-21 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4601965B2 (ja) 2004-01-09 2010-12-22 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4732063B2 (ja) * 2004-08-06 2011-07-27 浜松ホトニクス株式会社 レーザ加工方法

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JP2002192371A (ja) 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法及びレーザ加工装置
JP2002219591A (ja) 2001-01-22 2002-08-06 Toshiba Corp レーザ光照射装置
JP2003266185A (ja) 2002-03-12 2003-09-24 Hamamatsu Photonics Kk レーザ加工方法

Also Published As

Publication number Publication date
CN100472726C (zh) 2009-03-25
EP1804280B1 (en) 2015-09-30
US20090039559A1 (en) 2009-02-12
TW200626274A (en) 2006-08-01
WO2006040984A1 (ja) 2006-04-20
EP1804280A1 (en) 2007-07-04
EP1804280A4 (en) 2009-09-23
KR20070084162A (ko) 2007-08-24
TWI366493B (en) 2012-06-21
CN101040369A (zh) 2007-09-19
JP2006114627A (ja) 2006-04-27
JP4754801B2 (ja) 2011-08-24
US7608214B2 (en) 2009-10-27
MY141077A (en) 2010-03-15

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