JP4754801B2 - レーザ加工方法 - Google Patents

レーザ加工方法 Download PDF

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Publication number
JP4754801B2
JP4754801B2 JP2004299193A JP2004299193A JP4754801B2 JP 4754801 B2 JP4754801 B2 JP 4754801B2 JP 2004299193 A JP2004299193 A JP 2004299193A JP 2004299193 A JP2004299193 A JP 2004299193A JP 4754801 B2 JP4754801 B2 JP 4754801B2
Authority
JP
Japan
Prior art keywords
processing
region
laser light
workpiece
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2004299193A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006114627A5 (enExample
JP2006114627A (ja
Inventor
耕司 久野
達也 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2004299193A priority Critical patent/JP4754801B2/ja
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to CNB2005800351204A priority patent/CN100472726C/zh
Priority to EP05790460.9A priority patent/EP1804280B1/en
Priority to KR1020077010657A priority patent/KR101283162B1/ko
Priority to PCT/JP2005/018464 priority patent/WO2006040984A1/ja
Priority to US11/665,263 priority patent/US7608214B2/en
Priority to TW094135310A priority patent/TWI366493B/zh
Priority to MYPI20054786A priority patent/MY141077A/en
Publication of JP2006114627A publication Critical patent/JP2006114627A/ja
Publication of JP2006114627A5 publication Critical patent/JP2006114627A5/ja
Application granted granted Critical
Publication of JP4754801B2 publication Critical patent/JP4754801B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0665—Shaping the laser beam, e.g. by masks or multi-focusing by beam condensation on the workpiece, e.g. for focusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Drying Of Semiconductors (AREA)
JP2004299193A 2004-10-13 2004-10-13 レーザ加工方法 Expired - Lifetime JP4754801B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2004299193A JP4754801B2 (ja) 2004-10-13 2004-10-13 レーザ加工方法
EP05790460.9A EP1804280B1 (en) 2004-10-13 2005-10-05 Laser beam machining method
KR1020077010657A KR101283162B1 (ko) 2004-10-13 2005-10-05 레이저 가공 방법
PCT/JP2005/018464 WO2006040984A1 (ja) 2004-10-13 2005-10-05 レーザ加工方法
CNB2005800351204A CN100472726C (zh) 2004-10-13 2005-10-05 激光加工方法
US11/665,263 US7608214B2 (en) 2004-10-13 2005-10-05 Laser beam machining method
TW094135310A TWI366493B (en) 2004-10-13 2005-10-11 Laser processing method
MYPI20054786A MY141077A (en) 2004-10-13 2005-10-12 Laser processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004299193A JP4754801B2 (ja) 2004-10-13 2004-10-13 レーザ加工方法

Publications (3)

Publication Number Publication Date
JP2006114627A JP2006114627A (ja) 2006-04-27
JP2006114627A5 JP2006114627A5 (enExample) 2007-12-20
JP4754801B2 true JP4754801B2 (ja) 2011-08-24

Family

ID=36148279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004299193A Expired - Lifetime JP4754801B2 (ja) 2004-10-13 2004-10-13 レーザ加工方法

Country Status (8)

Country Link
US (1) US7608214B2 (enExample)
EP (1) EP1804280B1 (enExample)
JP (1) JP4754801B2 (enExample)
KR (1) KR101283162B1 (enExample)
CN (1) CN100472726C (enExample)
MY (1) MY141077A (enExample)
TW (1) TWI366493B (enExample)
WO (1) WO2006040984A1 (enExample)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
CN101335235B (zh) 2002-03-12 2010-10-13 浜松光子学株式会社 基板的分割方法
TWI326626B (en) 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
CN1328002C (zh) 2002-03-12 2007-07-25 浜松光子学株式会社 加工对象物切割方法
TWI520269B (zh) 2002-12-03 2016-02-01 濱松赫德尼古斯股份有限公司 Cutting method of semiconductor substrate
FR2852250B1 (fr) 2003-03-11 2009-07-24 Jean Luc Jouvin Fourreau de protection pour canule, un ensemble d'injection comportant un tel fourreau et aiguille equipee d'un tel fourreau
DE60315515T2 (de) 2003-03-12 2007-12-13 Hamamatsu Photonics K.K., Hamamatsu Laserstrahlbearbeitungsverfahren
WO2005007335A1 (ja) * 2003-07-18 2005-01-27 Hamamatsu Photonics K.K. レーザ加工方法、レーザ加工装置、及び加工生産物
JP4563097B2 (ja) 2003-09-10 2010-10-13 浜松ホトニクス株式会社 半導体基板の切断方法
JP4598407B2 (ja) * 2004-01-09 2010-12-15 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4601965B2 (ja) * 2004-01-09 2010-12-22 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4509578B2 (ja) 2004-01-09 2010-07-21 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
KR101336523B1 (ko) 2004-03-30 2013-12-03 하마마츠 포토닉스 가부시키가이샤 레이저 가공 방법 및 반도체 칩
WO2006013763A1 (ja) * 2004-08-06 2006-02-09 Hamamatsu Photonics K.K. レーザ加工方法及び半導体装置
JP4762653B2 (ja) * 2005-09-16 2011-08-31 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4923874B2 (ja) * 2005-11-16 2012-04-25 株式会社デンソー 半導体ウェハ
JP4907965B2 (ja) * 2005-11-25 2012-04-04 浜松ホトニクス株式会社 レーザ加工方法
JP4804911B2 (ja) * 2005-12-22 2011-11-02 浜松ホトニクス株式会社 レーザ加工装置
JP4907984B2 (ja) * 2005-12-27 2012-04-04 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップ
JP5183892B2 (ja) 2006-07-03 2013-04-17 浜松ホトニクス株式会社 レーザ加工方法
ES2428826T3 (es) 2006-07-03 2013-11-11 Hamamatsu Photonics K.K. Procedimiento de procesamiento por láser y chip
JP4954653B2 (ja) 2006-09-19 2012-06-20 浜松ホトニクス株式会社 レーザ加工方法
CN101516566B (zh) * 2006-09-19 2012-05-09 浜松光子学株式会社 激光加工方法和激光加工装置
JP5101073B2 (ja) * 2006-10-02 2012-12-19 浜松ホトニクス株式会社 レーザ加工装置
JP4964554B2 (ja) * 2006-10-03 2012-07-04 浜松ホトニクス株式会社 レーザ加工方法
JP5132911B2 (ja) * 2006-10-03 2013-01-30 浜松ホトニクス株式会社 レーザ加工方法
KR101428824B1 (ko) * 2006-10-04 2014-08-11 하마마츠 포토닉스 가부시키가이샤 레이저 가공방법
JP5336054B2 (ja) * 2007-07-18 2013-11-06 浜松ホトニクス株式会社 加工情報供給装置を備える加工情報供給システム
JP4558775B2 (ja) 2007-10-23 2010-10-06 富士通株式会社 加工装置および加工方法並びに板ばねの製造方法
JP5449665B2 (ja) * 2007-10-30 2014-03-19 浜松ホトニクス株式会社 レーザ加工方法
JP5134928B2 (ja) * 2007-11-30 2013-01-30 浜松ホトニクス株式会社 加工対象物研削方法
JP5054496B2 (ja) * 2007-11-30 2012-10-24 浜松ホトニクス株式会社 加工対象物切断方法
US7931849B2 (en) * 2008-06-25 2011-04-26 Applied Micro Circuits Corporation Non-destructive laser optical integrated circuit package marking
JP5692969B2 (ja) 2008-09-01 2015-04-01 浜松ホトニクス株式会社 収差補正方法、この収差補正方法を用いたレーザ加工方法、この収差補正方法を用いたレーザ照射方法、収差補正装置、及び、収差補正プログラム
JP5254761B2 (ja) 2008-11-28 2013-08-07 浜松ホトニクス株式会社 レーザ加工装置
JP5241527B2 (ja) 2009-01-09 2013-07-17 浜松ホトニクス株式会社 レーザ加工装置
JP5241525B2 (ja) 2009-01-09 2013-07-17 浜松ホトニクス株式会社 レーザ加工装置
KR101757937B1 (ko) 2009-02-09 2017-07-13 하마마츠 포토닉스 가부시키가이샤 가공대상물 절단방법
US8347651B2 (en) * 2009-02-19 2013-01-08 Corning Incorporated Method of separating strengthened glass
JP2012521339A (ja) * 2009-03-20 2012-09-13 コーニング インコーポレイテッド 精密レーザ罫書き
EP2418041B1 (en) 2009-04-07 2024-09-18 Hamamatsu Photonics K.K. Laser machining device and laser machining method
JP5491761B2 (ja) 2009-04-20 2014-05-14 浜松ホトニクス株式会社 レーザ加工装置
JP5476063B2 (ja) 2009-07-28 2014-04-23 浜松ホトニクス株式会社 加工対象物切断方法
JP2011189477A (ja) * 2010-03-16 2011-09-29 Disco Corp マイクロマシンデバイスの製造方法
WO2012014717A1 (ja) * 2010-07-26 2012-02-02 浜松ホトニクス株式会社 半導体デバイスの製造方法
JP2012054273A (ja) * 2010-08-31 2012-03-15 Disco Abrasive Syst Ltd ウエーハの加工方法
US8722516B2 (en) 2010-09-28 2014-05-13 Hamamatsu Photonics K.K. Laser processing method and method for manufacturing light-emitting device
TWI476064B (zh) * 2011-11-07 2015-03-11 Metal Ind Res & Dev Ct 硬脆材料切割方法
JP2013152989A (ja) * 2012-01-24 2013-08-08 Disco Abrasive Syst Ltd ウエーハの加工方法
KR101511670B1 (ko) * 2013-01-25 2015-04-13 에이엠테크놀로지 주식회사 유리 절단 장치
JP6366914B2 (ja) 2013-09-24 2018-08-01 株式会社東芝 多接合型太陽電池
JP6226803B2 (ja) * 2014-04-07 2017-11-08 株式会社ディスコ 加工方法
US10017411B2 (en) 2014-11-19 2018-07-10 Corning Incorporated Methods of separating a glass web
WO2018175193A2 (en) 2017-03-22 2018-09-27 Corning Incorporated Methods of separating a glass web
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
JP7233225B2 (ja) * 2019-01-10 2023-03-06 株式会社ディスコ ウェーハの割段方法
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
FR3099636B1 (fr) * 2019-07-31 2021-08-06 Aledia Système et procédé de traitement par laser
JP7475214B2 (ja) 2020-06-26 2024-04-26 株式会社ディスコ 被加工物の加工方法

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
JP4659300B2 (ja) * 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
JP2002192371A (ja) * 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法及びレーザ加工装置
JP2002219591A (ja) * 2001-01-22 2002-08-06 Toshiba Corp レーザ光照射装置
JP4050534B2 (ja) * 2002-03-12 2008-02-20 浜松ホトニクス株式会社 レーザ加工方法
JP2004188422A (ja) * 2002-12-06 2004-07-08 Hamamatsu Photonics Kk レーザ加工装置及びレーザ加工方法
CN1529347A (zh) * 2003-10-21 2004-09-15 中国科学院上海光学精密机械研究所 蓝宝石基氮化物芯片的划片方法
JP4601965B2 (ja) 2004-01-09 2010-12-22 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4598407B2 (ja) 2004-01-09 2010-12-15 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4509578B2 (ja) 2004-01-09 2010-07-21 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4732063B2 (ja) * 2004-08-06 2011-07-27 浜松ホトニクス株式会社 レーザ加工方法

Also Published As

Publication number Publication date
EP1804280A1 (en) 2007-07-04
EP1804280B1 (en) 2015-09-30
MY141077A (en) 2010-03-15
US7608214B2 (en) 2009-10-27
KR101283162B1 (ko) 2013-07-05
WO2006040984A1 (ja) 2006-04-20
JP2006114627A (ja) 2006-04-27
TW200626274A (en) 2006-08-01
CN100472726C (zh) 2009-03-25
TWI366493B (en) 2012-06-21
CN101040369A (zh) 2007-09-19
KR20070084162A (ko) 2007-08-24
US20090039559A1 (en) 2009-02-12
EP1804280A4 (en) 2009-09-23

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