KR101277129B1 - 물-풍부 스트리핑 및 세척 포뮬레이션 및 이를 이용한 방법 - Google Patents
물-풍부 스트리핑 및 세척 포뮬레이션 및 이를 이용한 방법 Download PDFInfo
- Publication number
- KR101277129B1 KR101277129B1 KR1020100084270A KR20100084270A KR101277129B1 KR 101277129 B1 KR101277129 B1 KR 101277129B1 KR 1020100084270 A KR1020100084270 A KR 1020100084270A KR 20100084270 A KR20100084270 A KR 20100084270A KR 101277129 B1 KR101277129 B1 KR 101277129B1
- Authority
- KR
- South Korea
- Prior art keywords
- hydroxyquinoline
- amino
- water
- hydroxylamine
- monoethanolamine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
- C23G1/22—Light metals
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Inorganic Chemistry (AREA)
- Emergency Medicine (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23826809P | 2009-08-31 | 2009-08-31 | |
| US61/238,268 | 2009-08-31 | ||
| US12/859,624 | 2010-08-19 | ||
| US12/859,624 US8518865B2 (en) | 2009-08-31 | 2010-08-19 | Water-rich stripping and cleaning formulation and method for using same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20110025609A KR20110025609A (ko) | 2011-03-10 |
| KR101277129B1 true KR101277129B1 (ko) | 2013-06-20 |
Family
ID=43066059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020100084270A Expired - Fee Related KR101277129B1 (ko) | 2009-08-31 | 2010-08-30 | 물-풍부 스트리핑 및 세척 포뮬레이션 및 이를 이용한 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8518865B2 (enExample) |
| EP (1) | EP2290046B1 (enExample) |
| JP (1) | JP5385231B2 (enExample) |
| KR (1) | KR101277129B1 (enExample) |
| CN (1) | CN102004399B (enExample) |
| TW (1) | TWI433930B (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9329486B2 (en) | 2005-10-28 | 2016-05-03 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
| US8263539B2 (en) | 2005-10-28 | 2012-09-11 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and methods for its use |
| US7632796B2 (en) | 2005-10-28 | 2009-12-15 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
| US8889609B2 (en) * | 2011-03-16 | 2014-11-18 | Air Products And Chemicals, Inc. | Cleaning formulations and method of using the cleaning formulations |
| US9023782B2 (en) | 2011-05-20 | 2015-05-05 | Ecolab Usa Inc. | Non-corrosive oven degreaser concentrate |
| CN103182384B (zh) * | 2011-12-31 | 2015-07-08 | 中芯国际集成电路制造(上海)有限公司 | 一种对焊盘表面进行清洗的方法 |
| US9158202B2 (en) | 2012-11-21 | 2015-10-13 | Dynaloy, Llc | Process and composition for removing substances from substrates |
| JP6198384B2 (ja) | 2012-11-28 | 2017-09-20 | 富士フイルム株式会社 | 半導体基板のエッチング方法及び半導体素子の製造方法 |
| CN103308654B (zh) * | 2013-06-13 | 2016-08-10 | 深圳市华星光电技术有限公司 | 用于测试光阻剥离液中水分含量的方法 |
| WO2015084921A1 (en) | 2013-12-06 | 2015-06-11 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning formulation for removing residues on surfaces |
| US20150219996A1 (en) * | 2014-02-06 | 2015-08-06 | Dynaloy, Llc | Composition for removing substances from substrates |
| KR20160094640A (ko) | 2015-02-02 | 2016-08-10 | 동우 화인켐 주식회사 | 티타늄막 식각액 조성물 |
| CN106919011B (zh) * | 2015-12-25 | 2021-12-17 | 安集微电子科技(上海)股份有限公司 | 一种富含水的羟胺剥离清洗液 |
| KR101697336B1 (ko) | 2016-03-03 | 2017-01-17 | 주식회사 엘지화학 | 액정 배향막의 제조방법 |
| TWI608311B (zh) * | 2016-03-25 | 2017-12-11 | 達興材料股份有限公司 | 一種光阻脫除組成物及一種利用該光阻脫除組成物進行微影製程的電子元件的製造方法 |
| US11035044B2 (en) * | 2017-01-23 | 2021-06-15 | Versum Materials Us, Llc | Etching solution for tungsten and GST films |
| US11136536B2 (en) | 2017-12-01 | 2021-10-05 | Ecolab Usa Inc. | Cleaning compositions and methods for removing baked on grease from fryers and other hot surfaces |
| CN111902379B (zh) | 2018-03-28 | 2023-02-17 | 富士胶片电子材料美国有限公司 | 清洗组合物 |
| JP7176089B2 (ja) * | 2018-07-20 | 2022-11-21 | インテグリス・インコーポレーテッド | 腐食防止剤を含む洗浄組成物 |
| JP6858209B2 (ja) * | 2019-02-20 | 2021-04-14 | 東京応化工業株式会社 | リソグラフィー用洗浄液、及び基板の洗浄方法 |
| TWI719648B (zh) * | 2019-09-23 | 2021-02-21 | 達興材料股份有限公司 | 一種樹脂清洗劑 |
| CN114450388B (zh) * | 2019-09-27 | 2025-03-21 | 弗萨姆材料美国有限责任公司 | 用于去除蚀刻残留物的组合物及其使用方法和用途 |
| WO2021067147A1 (en) * | 2019-09-30 | 2021-04-08 | Versum Materials Us, Llc | Photoresist remover |
| KR102334425B1 (ko) * | 2019-11-21 | 2021-12-01 | 엘티씨 (주) | 디스플레이 제조용 포토레지스트 박리액 조성물 |
| JP2023544600A (ja) * | 2020-10-02 | 2023-10-24 | インテグリス・インコーポレーテッド | アミンから金属種を除去するための膜 |
| US12460157B2 (en) | 2021-03-12 | 2025-11-04 | Ecolab Usa Inc. | Multipurpose acidic compositions and methods of use |
| US12247185B2 (en) | 2020-11-25 | 2025-03-11 | Ecolab Usa Inc. | Multipurpose alkaline compositions and methods of use |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050110955A (ko) * | 2004-05-20 | 2005-11-24 | 금호석유화학 주식회사 | 포토레지스트용 스트리퍼 조성물 및 이를 포토레지스트박리에 사용하는 방법 |
| KR20060113906A (ko) * | 2003-10-29 | 2006-11-03 | 말린크로트 베이커, 인코포레이티드 | 알칼리성, 플라즈마 에칭/애싱 후 잔류물 제거제 및금속-할라이드 부식 억제제를 함유한 포토레지스트스트리핑 조성물 |
| KR20060126970A (ko) * | 2003-10-21 | 2006-12-11 | 듀퐁 에어 프로덕츠 나노머티어리얼즈 엘엘씨 | 입자 없는 화학적 기계적 연마 조성물 및 이를 포함하는연마 공정 |
| KR100672102B1 (ko) | 1999-02-25 | 2007-01-19 | 미츠비시 가스 가가쿠 가부시키가이샤 | 레지스트 박리제 및 이것을 이용한 반도체소자의 제조방법 |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4395479A (en) | 1981-09-23 | 1983-07-26 | J. T. Baker Chemical Company | Stripping compositions and methods of stripping resists |
| US4428871A (en) | 1981-09-23 | 1984-01-31 | J. T. Baker Chemical Company | Stripping compositions and methods of stripping resists |
| US4401748A (en) | 1982-09-07 | 1983-08-30 | J. T. Baker Chemical Company | Stripping compositions and methods of stripping resists |
| US7205265B2 (en) * | 1990-11-05 | 2007-04-17 | Ekc Technology, Inc. | Cleaning compositions and methods of use thereof |
| US6110881A (en) * | 1990-11-05 | 2000-08-29 | Ekc Technology, Inc. | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials |
| US5981454A (en) | 1993-06-21 | 1999-11-09 | Ekc Technology, Inc. | Post clean treatment composition comprising an organic acid and hydroxylamine |
| US5279771A (en) * | 1990-11-05 | 1994-01-18 | Ekc Technology, Inc. | Stripping compositions comprising hydroxylamine and alkanolamine |
| US5556482A (en) * | 1991-01-25 | 1996-09-17 | Ashland, Inc. | Method of stripping photoresist with composition containing inhibitor |
| US5496491A (en) * | 1991-01-25 | 1996-03-05 | Ashland Oil Company | Organic stripping composition |
| JP3048207B2 (ja) | 1992-07-09 | 2000-06-05 | イー.ケー.シー.テクノロジー.インコーポレイテッド | 還元及び酸化電位を有する求核アミン化合物を含む洗浄剤組成物およびこれを使用した基板の洗浄方法 |
| US5308745A (en) | 1992-11-06 | 1994-05-03 | J. T. Baker Inc. | Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins |
| US7144849B2 (en) * | 1993-06-21 | 2006-12-05 | Ekc Technology, Inc. | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials |
| US6030932A (en) | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
| US5798323A (en) * | 1997-05-05 | 1998-08-25 | Olin Microelectronic Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
| JP3773227B2 (ja) | 1997-10-16 | 2006-05-10 | 東京応化工業株式会社 | レジスト用剥離液組成物およびこれを用いたレジスト剥離方法 |
| DK1105778T3 (da) * | 1998-05-18 | 2009-10-19 | Mallinckrodt Baker Inc | Silikatholdige alkaliske sammensætninger til rensning af mikorelektroniske substrater |
| US6328943B1 (en) * | 1998-07-09 | 2001-12-11 | Betzdearborn Inc. | Inhibition of pyrophoric iron sulfide activity |
| JP2000056480A (ja) | 1998-08-10 | 2000-02-25 | Tokyo Ohka Kogyo Co Ltd | レジスト用剥離液組成物およびこれを用いたレジスト剥離方法 |
| JP2000199971A (ja) | 1999-01-07 | 2000-07-18 | Tokyo Ohka Kogyo Co Ltd | ホトレジスト用剥離液組成物およびこれを用いたホトレジスト剥離方法 |
| US6475966B1 (en) * | 2000-02-25 | 2002-11-05 | Shipley Company, L.L.C. | Plasma etching residue removal |
| US6599370B2 (en) * | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
| MY131912A (en) * | 2001-07-09 | 2007-09-28 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
| MY143399A (en) * | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
| US7393819B2 (en) * | 2002-07-08 | 2008-07-01 | Mallinckrodt Baker, Inc. | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
| TWI315030B (en) * | 2003-06-26 | 2009-09-21 | Dongwoo Fine Chem Co Ltd | Photoresist stripper composition, and exfoliation method of a photoresist using it |
| US8338087B2 (en) | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
| KR101088568B1 (ko) | 2005-04-19 | 2011-12-05 | 아반토르 퍼포먼스 머티리얼스, 인크. | 갈바닉 부식을 억제하는 비수성 포토레지스트 스트립퍼 |
| US7727420B2 (en) * | 2005-05-17 | 2010-06-01 | Ppt Research | Corrosion inhibiting compositions |
| US7879782B2 (en) * | 2005-10-13 | 2011-02-01 | Air Products And Chemicals, Inc. | Aqueous cleaning composition and method for using same |
| US20070179072A1 (en) * | 2006-01-30 | 2007-08-02 | Rao Madhukar B | Cleaning formulations |
| US7879783B2 (en) * | 2007-01-11 | 2011-02-01 | Air Products And Chemicals, Inc. | Cleaning composition for semiconductor substrates |
| KR20100087134A (ko) * | 2007-10-29 | 2010-08-03 | 이케이씨 테크놀로지, 인코포레이티드 | 히드록실아민을 함유하는 용액의 안정화 및 이것의 제조 방법 |
| ES2386692T3 (es) * | 2007-11-13 | 2012-08-27 | Sachem, Inc. | Composición de silsesquioxano poliédrico con potencial zeta negativo elevado y método para la limpieza húmeda de semiconductores sin daños |
-
2010
- 2010-08-19 US US12/859,624 patent/US8518865B2/en active Active
- 2010-08-25 TW TW099128531A patent/TWI433930B/zh not_active IP Right Cessation
- 2010-08-27 EP EP10174406.8A patent/EP2290046B1/en not_active Not-in-force
- 2010-08-30 KR KR1020100084270A patent/KR101277129B1/ko not_active Expired - Fee Related
- 2010-08-31 CN CN201010269271.9A patent/CN102004399B/zh not_active Expired - Fee Related
- 2010-08-31 JP JP2010194140A patent/JP5385231B2/ja not_active Expired - Fee Related
-
2013
- 2013-07-08 US US13/936,656 patent/US9201308B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100672102B1 (ko) | 1999-02-25 | 2007-01-19 | 미츠비시 가스 가가쿠 가부시키가이샤 | 레지스트 박리제 및 이것을 이용한 반도체소자의 제조방법 |
| KR20060126970A (ko) * | 2003-10-21 | 2006-12-11 | 듀퐁 에어 프로덕츠 나노머티어리얼즈 엘엘씨 | 입자 없는 화학적 기계적 연마 조성물 및 이를 포함하는연마 공정 |
| KR20060113906A (ko) * | 2003-10-29 | 2006-11-03 | 말린크로트 베이커, 인코포레이티드 | 알칼리성, 플라즈마 에칭/애싱 후 잔류물 제거제 및금속-할라이드 부식 억제제를 함유한 포토레지스트스트리핑 조성물 |
| KR20050110955A (ko) * | 2004-05-20 | 2005-11-24 | 금호석유화학 주식회사 | 포토레지스트용 스트리퍼 조성물 및 이를 포토레지스트박리에 사용하는 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102004399B (zh) | 2014-11-19 |
| TWI433930B (zh) | 2014-04-11 |
| CN102004399A (zh) | 2011-04-06 |
| TW201107466A (en) | 2011-03-01 |
| EP2290046A1 (en) | 2011-03-02 |
| US9201308B2 (en) | 2015-12-01 |
| JP2011080042A (ja) | 2011-04-21 |
| JP5385231B2 (ja) | 2014-01-08 |
| US8518865B2 (en) | 2013-08-27 |
| KR20110025609A (ko) | 2011-03-10 |
| EP2290046B1 (en) | 2017-04-12 |
| US20130296215A1 (en) | 2013-11-07 |
| US20110212866A1 (en) | 2011-09-01 |
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