KR101276482B1 - 에칭 방법 및 장치 - Google Patents

에칭 방법 및 장치 Download PDF

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Publication number
KR101276482B1
KR101276482B1 KR1020127024873A KR20127024873A KR101276482B1 KR 101276482 B1 KR101276482 B1 KR 101276482B1 KR 1020127024873 A KR1020127024873 A KR 1020127024873A KR 20127024873 A KR20127024873 A KR 20127024873A KR 101276482 B1 KR101276482 B1 KR 101276482B1
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KR
South Korea
Prior art keywords
substrate
temperature
processing
processed
gas
Prior art date
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KR1020127024873A
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English (en)
Korean (ko)
Other versions
KR20120114410A (ko
Inventor
에이지 미야모토
마사오 이노우에
Original Assignee
세키스이가가쿠 고교가부시키가이샤
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Publication of KR20120114410A publication Critical patent/KR20120114410A/ko
Application granted granted Critical
Publication of KR101276482B1 publication Critical patent/KR101276482B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
KR1020127024873A 2010-02-25 2011-02-21 에칭 방법 및 장치 KR101276482B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2010040768 2010-02-25
JPJP-P-2010-040768 2010-02-25
JP2010214117 2010-09-24
JPJP-P-2010-214117 2010-09-24
PCT/JP2011/053704 WO2011105331A1 (ja) 2010-02-25 2011-02-21 エッチング方法及び装置

Publications (2)

Publication Number Publication Date
KR20120114410A KR20120114410A (ko) 2012-10-16
KR101276482B1 true KR101276482B1 (ko) 2013-06-18

Family

ID=44506739

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127024873A KR101276482B1 (ko) 2010-02-25 2011-02-21 에칭 방법 및 장치

Country Status (5)

Country Link
JP (1) JP5167430B2 (zh)
KR (1) KR101276482B1 (zh)
CN (1) CN102770944B (zh)
TW (1) TWI415185B (zh)
WO (1) WO2011105331A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160138119A (ko) * 2014-04-16 2016-12-02 아사히 가라스 가부시키가이샤 에칭 장치, 에칭 방법, 기판의 제조 방법, 및 기판

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5735393B2 (ja) * 2011-09-30 2015-06-17 積水化学工業株式会社 表面粗化方法及び表面粗化装置
JP5837829B2 (ja) * 2012-01-11 2015-12-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP5774562B2 (ja) * 2012-08-29 2015-09-09 ＡｖａｎＳｔｒａｔｅ株式会社 ガラス基板の製造方法
WO2017043651A1 (ja) 2015-09-11 2017-03-16 日本電気硝子株式会社 ガラス基板の製造方法
JP6651127B2 (ja) 2015-09-11 2020-02-19 日本電気硝子株式会社 ガラス板の製造方法及びその製造装置
JP6641663B2 (ja) * 2015-09-11 2020-02-05 日本電気硝子株式会社 ガラス板の製造方法及びその製造装置
JP6562208B2 (ja) * 2015-09-11 2019-08-21 日本電気硝子株式会社 ガラス板の製造方法及びその製造装置
CN107709259B (zh) * 2015-09-11 2020-07-31 日本电气硝子株式会社 玻璃基板的制造方法以及玻璃基板的制造装置
JP6854611B2 (ja) * 2016-01-13 2021-04-07 東京エレクトロン株式会社 基板処理方法、基板処理装置及び基板処理システム
WO2018092556A1 (ja) * 2016-11-16 2018-05-24 日本電気硝子株式会社 ガラス基板の製造方法
JP6941531B2 (ja) * 2017-10-05 2021-09-29 積水化学工業株式会社 表面処理装置
JP2019071407A (ja) * 2017-10-10 2019-05-09 積水化学工業株式会社 表面処理方法及び装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007294642A (ja) 2006-04-25 2007-11-08 Sekisui Chem Co Ltd シリコンのエッチング方法
JP2008288556A (ja) 2007-04-18 2008-11-27 Shin Etsu Chem Co Ltd 貼り合わせ基板の製造方法
JP2008306175A (ja) 2007-05-09 2008-12-18 Elpida Memory Inc 基板の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19941042A1 (de) * 1999-08-28 2001-03-15 Bosch Gmbh Robert Verfahren zur Herstellung oberflächenmikromechanischer Strukturen durch Ätzung mit einem dampfförmigen, flußsäurehaltigen Ätzmedium
JP4167544B2 (ja) * 2003-05-30 2008-10-15 積水化学工業株式会社 プラズマエッチング方法及び装置
JP5416590B2 (ja) * 2007-10-05 2014-02-12 積水化学工業株式会社 シリコンのエッチング方法
JP4540729B2 (ja) * 2008-03-13 2010-09-08 積水化学工業株式会社 シリコン含有膜のエッチング方法および装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007294642A (ja) 2006-04-25 2007-11-08 Sekisui Chem Co Ltd シリコンのエッチング方法
JP2008288556A (ja) 2007-04-18 2008-11-27 Shin Etsu Chem Co Ltd 貼り合わせ基板の製造方法
JP2008306175A (ja) 2007-05-09 2008-12-18 Elpida Memory Inc 基板の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160138119A (ko) * 2014-04-16 2016-12-02 아사히 가라스 가부시키가이샤 에칭 장치, 에칭 방법, 기판의 제조 방법, 및 기판
KR102368126B1 (ko) 2014-04-16 2022-02-25 에이지씨 가부시키가이샤 에칭 장치, 에칭 방법, 기판의 제조 방법, 및 기판

Also Published As

Publication number Publication date
CN102770944B (zh) 2013-11-06
JPWO2011105331A1 (ja) 2013-06-20
CN102770944A (zh) 2012-11-07
WO2011105331A1 (ja) 2011-09-01
TW201145381A (en) 2011-12-16
JP5167430B2 (ja) 2013-03-21
KR20120114410A (ko) 2012-10-16
TWI415185B (zh) 2013-11-11

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