JP5167430B2 - エッチング方法及び装置 - Google Patents

エッチング方法及び装置 Download PDF

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Publication number
JP5167430B2
JP5167430B2 JP2012501768A JP2012501768A JP5167430B2 JP 5167430 B2 JP5167430 B2 JP 5167430B2 JP 2012501768 A JP2012501768 A JP 2012501768A JP 2012501768 A JP2012501768 A JP 2012501768A JP 5167430 B2 JP5167430 B2 JP 5167430B2
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Japan
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substrate
processing
temperature
processed
gas
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JP2012501768A
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English (en)
Japanese (ja)
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JPWO2011105331A1 (ja
Inventor
栄司 宮本
将男 井上
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Sekisui Chemical Co Ltd
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Sekisui Chemical Co Ltd
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Publication of JPWO2011105331A1 publication Critical patent/JPWO2011105331A1/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
JP2012501768A 2010-02-25 2011-02-21 エッチング方法及び装置 Active JP5167430B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012501768A JP5167430B2 (ja) 2010-02-25 2011-02-21 エッチング方法及び装置

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2010040768 2010-02-25
JP2010040768 2010-02-25
JP2010214117 2010-09-24
JP2010214117 2010-09-24
JP2012501768A JP5167430B2 (ja) 2010-02-25 2011-02-21 エッチング方法及び装置
PCT/JP2011/053704 WO2011105331A1 (ja) 2010-02-25 2011-02-21 エッチング方法及び装置

Publications (2)

Publication Number Publication Date
JP5167430B2 true JP5167430B2 (ja) 2013-03-21
JPWO2011105331A1 JPWO2011105331A1 (ja) 2013-06-20

Family

ID=44506739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012501768A Active JP5167430B2 (ja) 2010-02-25 2011-02-21 エッチング方法及び装置

Country Status (5)

Country Link
JP (1) JP5167430B2 (zh)
KR (1) KR101276482B1 (zh)
CN (1) CN102770944B (zh)
TW (1) TWI415185B (zh)
WO (1) WO2011105331A1 (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5735393B2 (ja) * 2011-09-30 2015-06-17 積水化学工業株式会社 表面粗化方法及び表面粗化装置
JP5837829B2 (ja) * 2012-01-11 2015-12-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP5774562B2 (ja) * 2012-08-29 2015-09-09 ＡｖａｎＳｔｒａｔｅ株式会社 ガラス基板の製造方法
CN106233433B (zh) * 2014-04-16 2019-03-05 Ａｇｃ株式会社 蚀刻装置、蚀刻方法、基板的制造方法及基板
WO2017043651A1 (ja) 2015-09-11 2017-03-16 日本電気硝子株式会社 ガラス基板の製造方法
JP6651127B2 (ja) 2015-09-11 2020-02-19 日本電気硝子株式会社 ガラス板の製造方法及びその製造装置
JP6641663B2 (ja) * 2015-09-11 2020-02-05 日本電気硝子株式会社 ガラス板の製造方法及びその製造装置
JP6562208B2 (ja) * 2015-09-11 2019-08-21 日本電気硝子株式会社 ガラス板の製造方法及びその製造装置
CN107709259B (zh) * 2015-09-11 2020-07-31 日本电气硝子株式会社 玻璃基板的制造方法以及玻璃基板的制造装置
JP6854611B2 (ja) * 2016-01-13 2021-04-07 東京エレクトロン株式会社 基板処理方法、基板処理装置及び基板処理システム
WO2018092556A1 (ja) * 2016-11-16 2018-05-24 日本電気硝子株式会社 ガラス基板の製造方法
JP6941531B2 (ja) * 2017-10-05 2021-09-29 積水化学工業株式会社 表面処理装置
JP2019071407A (ja) * 2017-10-10 2019-05-09 積水化学工業株式会社 表面処理方法及び装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001129798A (ja) * 1999-08-28 2001-05-15 Robert Bosch Gmbh 表面マイクロマシニング型構造体の製法
JP2007294642A (ja) * 2006-04-25 2007-11-08 Sekisui Chem Co Ltd シリコンのエッチング方法
JP2008288556A (ja) * 2007-04-18 2008-11-27 Shin Etsu Chem Co Ltd 貼り合わせ基板の製造方法
JP2008306175A (ja) * 2007-05-09 2008-12-18 Elpida Memory Inc 基板の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4167544B2 (ja) * 2003-05-30 2008-10-15 積水化学工業株式会社 プラズマエッチング方法及び装置
JP5416590B2 (ja) * 2007-10-05 2014-02-12 積水化学工業株式会社 シリコンのエッチング方法
JP4540729B2 (ja) * 2008-03-13 2010-09-08 積水化学工業株式会社 シリコン含有膜のエッチング方法および装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001129798A (ja) * 1999-08-28 2001-05-15 Robert Bosch Gmbh 表面マイクロマシニング型構造体の製法
JP2007294642A (ja) * 2006-04-25 2007-11-08 Sekisui Chem Co Ltd シリコンのエッチング方法
JP2008288556A (ja) * 2007-04-18 2008-11-27 Shin Etsu Chem Co Ltd 貼り合わせ基板の製造方法
JP2008306175A (ja) * 2007-05-09 2008-12-18 Elpida Memory Inc 基板の製造方法

Also Published As

Publication number Publication date
CN102770944B (zh) 2013-11-06
KR101276482B1 (ko) 2013-06-18
JPWO2011105331A1 (ja) 2013-06-20
CN102770944A (zh) 2012-11-07
WO2011105331A1 (ja) 2011-09-01
TW201145381A (en) 2011-12-16
KR20120114410A (ko) 2012-10-16
TWI415185B (zh) 2013-11-11

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