WO2017043651A1 - ガラス基板の製造方法 - Google Patents
ガラス基板の製造方法 Download PDFInfo
- Publication number
- WO2017043651A1 WO2017043651A1 PCT/JP2016/076695 JP2016076695W WO2017043651A1 WO 2017043651 A1 WO2017043651 A1 WO 2017043651A1 JP 2016076695 W JP2016076695 W JP 2016076695W WO 2017043651 A1 WO2017043651 A1 WO 2017043651A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- glass substrate
- chamber
- carry
- opening width
- port
- Prior art date
Links
- 239000011521 glass Substances 0.000 title claims abstract description 171
- 239000000758 substrate Substances 0.000 title claims abstract description 171
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 41
- 230000008569 process Effects 0.000 claims abstract description 26
- 238000005530 etching Methods 0.000 claims abstract description 22
- 230000007246 mechanism Effects 0.000 claims description 12
- 238000005507 spraying Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 description 58
- 230000032258 transport Effects 0.000 description 19
- 125000006850 spacer group Chemical group 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 238000011084 recovery Methods 0.000 description 6
- 229920000915 polyvinyl chloride Polymers 0.000 description 5
- 239000004800 polyvinyl chloride Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007786 electrostatic charging Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000036544 posture Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
- B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
- B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Definitions
- the present invention relates to a glass substrate manufacturing method in which a glass substrate is etched using a processing gas such as hydrogen fluoride.
- glass substrates such as flat panel displays (FPD) represented by liquid crystal displays, plasma displays, organic EL displays, field emission displays, and mobile devices such as smart phones and tablet PCs.
- FPD flat panel displays
- LCD liquid crystal displays
- organic EL displays organic EL displays
- field emission displays and mobile devices
- smart phones and tablet PCs Embedded in a variety of electronic devices.
- the glass substrate in the manufacturing process of the glass substrate, there may be a problem due to electrostatic charging.
- the glass substrate when a glass substrate is placed on a mounting table to perform a predetermined process on the glass substrate, the glass substrate may stick to the mounting table due to electrostatic charging, and the glass substrate has been processed. When it is going to peel off from a mounting base, the said glass substrate may be damaged.
- Patent Document 1 A technique for avoiding the occurrence of this is known.
- Patent Document 1 One specific example of this technique is disclosed in Patent Document 1.
- etching processing is performed on a glass substrate being transported by spraying a processing gas from a blow nozzle on the upstream side of the transport path, and the processing gas is sucked by a suction nozzle on the downstream side of the transport path.
- a method for exhausting the air is disclosed.
- an etching process is often performed in the chamber in order to prevent the processing gas from leaking.
- the chamber is formed with a carry-in port for carrying the glass substrate into the chamber and a carry-out port for carrying out the glass substrate.
- the glass substrate carry-in port and carry-out port are formed in the chamber, due to the pressure difference between the inside and outside of the chamber, the airflow flowing into the chamber through the carry-in port and the carry-out port and the outflow to the outside of the chamber When a flowing air flow is generated, there is a problem that the flow of the processing gas is disturbed by the air flow and the surface of the glass substrate is unevenly roughened.
- This invention made
- formed in view of said situation enables the reliable execution, when performing an etching process to a glass substrate using process gas in the chamber in which the carrying-in port and carrying-out port of the glass substrate were formed. This is a technical issue.
- the present invention created in order to solve the above problems is a processing region provided on the glass substrate transport path in the chamber while transporting the glass substrate transported into the chamber from the transport entrance in the horizontal direction.
- “transporting the glass substrate in the horizontal direction” means not only when the glass substrate is transported in the non-inclined horizontal direction, but also tilting the glass substrate up and down within a range of 30 ° or less with respect to the horizontal plane. It also includes the case of transporting in the specified direction. Moreover, the attitude
- the processing gas is sprayed onto the lower surface of the glass substrate, and the opening width adjustment is arranged on the upper edge side with respect to the glass substrate passing through these openings for each of the carry-out port and the carry-in port. It is preferable to adjust the opening width so that the member is separated from the opening width adjusting member disposed on the lower edge side.
- a part of these openings is divided into upper and lower parts with the glass substrate as a boundary. That is, a part of the opening is divided into the upper surface side and the lower surface side of the glass substrate.
- a processing gas the airflow that flows into the chamber from the lower surface side of the glass substrate is sprayed on the lower surface of the glass substrate. It is easy to cause disturbance in the flow of the lower surface processing gas.
- the opening width is adjusted so that the opening width adjusting member arranged on the upper edge side is separated from the opening width adjusting member arranged on the lower edge side with respect to the glass substrate passing through the opening.
- the length of the glass substrate along the transport direction is such that the distance between the carry-in entrance and the processing area along the transport path, and the distance between the process area and the carry-out exit along the transport path. May be longer.
- the front part of the glass substrate has already reached the processing area before the last part of the glass substrate being transported has passed through the carry-in entrance. Moreover, before the last part of a glass substrate finishes passing a process area
- the region from the carry-in entrance to the processing region is divided vertically within the chamber, and the region from the treatment region to the carry-out port is divided vertically within the chamber, with the glass substrate being transferred as a boundary. Therefore, the airflow that has flowed into the chamber from the lower surface side of the glass substrate more easily disturbs the flow of the lower surface processing gas.
- the opening width adjusting member arranged on the upper edge side with respect to the glass substrate passing through the opening is If the opening width is adjusted to be in a state of being separated from the opening width adjusting member arranged on the lower edge side, and the air flow is less likely to flow into the chamber than the upper surface side on the lower surface side of the glass substrate, The effect can be utilized more effectively.
- a processing device that performs an etching process by spraying a processing gas onto the glass substrate may be installed at the bottom of the chamber so that a gap is formed between the chamber and the ceiling.
- the opening width is adjusted so that the opening width adjusting member arranged on the upper edge side is separated from the opening width adjusting member arranged on the lower edge side with respect to the glass substrate passing through the opening of the carry-in port and the carry-out port. Is adjusted, airflow is more likely to flow into the chamber on the upper surface side of the glass substrate than on the lower surface side.
- a processing unit that performs an etching process by spraying a processing gas on the glass substrate is installed at the bottom of the chamber so that a gap is formed between the chamber and the ceiling, It becomes easy to guide the airflow flowing into the chamber from the upper surface side so as to flow into a gap formed between the processing device and the ceiling of the chamber. As a result, the airflow is less likely to stay in the vicinity of the processor, which is more suitable for avoiding disturbance in the flow of the lower surface processing gas.
- the opening width adjusting member can be moved by an operation outside the chamber via the moving mechanism, it is not necessary to open and close the chamber in order to move the opening width adjusting member. Thereby, it becomes easy to prevent the occurrence of problems such as the processing gas leaking out of the chamber as the chamber is opened and closed.
- the opening width along the vertical direction at each of the carry-in port and the carry-out port can be adjusted only by moving the plate-like member at the upper edge side and the lower edge side of each of the carry-in port and the carry-out port. It becomes possible to do. Therefore, it is possible to reduce the cost and labor required to control the airflow flowing into the chamber and the flow velocity (flow rate) of the airflow flowing out of the chamber.
- the present invention when an etching process is performed on a glass substrate using a processing gas in a chamber in which a glass substrate carry-in port and a carry-out port are formed, it is possible to reliably perform the process.
- the glass substrate manufacturing apparatus 1 transports the glass substrate 3 carried into the chamber 2 from the carry-in port 2 a in the horizontal direction on the conveyance path of the glass substrate 3 in the chamber 2. After the etching treatment is performed with hydrogen fluoride as the treatment gas 5 in the treatment region 4 provided, the treated glass substrate 3 is carried out of the chamber 2 from the carry-out port 2b.
- the glass substrate manufacturing apparatus 1 can transport the glass substrate 3 in a flat position along a transport path extending in a straight line by a plurality of rollers 6 disposed inside and outside the chamber 2. .
- the outer shape of the chamber 2 is formed in a rectangular parallelepiped shape, and the processing gas 5 is prevented from flowing out of the chamber 2 from the space 7 formed therein.
- the chamber 2 includes a carry-in port 2 a for carrying in the glass substrate 3 and a carry-out port 2 b for carrying out the glass substrate 3.
- the carry-in port 2a and the carry-out port 2b are formed in the side wall portion 2c of the chamber 2, and along the main surface (upper surface and lower surface) of the glass substrate 3, the width direction orthogonal to the transport direction of the glass substrate 3 (FIG. 1). Is a direction that is perpendicular to the paper surface, and is hereinafter referred to simply as the width direction).
- the material of the chamber 2 is polyvinyl chloride having excellent corrosion resistance to the processing gas 5 (hydrogen fluoride).
- a barometer (not shown) is installed in the chamber 2 (in the space 7) and outside the chamber 2, and the barometric pressure difference inside and outside the chamber 2 can be measured by both barometers. .
- the opening width along the up-down direction is the upper edge 2aa (2ba) side of the opening and the lower edge 2ab ( 2 bb) side can be adjusted by a pair of opening width adjusting members 8 and 9 which can be moved in the vertical direction along the side wall 2c of the chamber 2, respectively.
- the operator adjusts the opening widths of the carry-in port 2a and the carry-out port 2b based on the pressure difference between the inside and outside of the chamber 2 measured by the above two barometers.
- each of the pair of opening width adjusting members 8 and 9 is polyvinyl chloride.
- the opening width adjusting member 8 (9) is formed in an L shape in a side view and is formed of a member elongated in the width direction, and extends along the carry-in port 2a and the carry-out port 2b.
- the opening width adjusting member 8 (9) may be formed of a rectangular plate member that is long in the width direction. Further, the opening width adjusting member 8 (9) can be moved along the guide rail 11 installed on the side wall 2c of the chamber 2 so as to extend in the vertical direction. Further, the opening width adjusting member 8 (9) is connected to a ball screw mechanism 12 as a moving mechanism for moving the opening width adjusting member 8 (9).
- the ball screw mechanism 12 includes a plate member 12a directly connected to the opening width adjusting member 8 (9), and a ball screw for feeding the opening width adjusting member 8 (9) in the vertical direction via the plate member 12a as the device rotates. 12b, a rotation shaft 12c that penetrates the chamber 2 and rotates in synchronization with the ball screw 12b, and a handle 12d that allows an operator to rotate the ball screw 12b via the rotation shaft 12c. With this ball screw mechanism 12, an operator can operate the handle 12d outside the chamber 2 to move the opening width adjusting member 8 (9).
- each of the carry-in port 2a and the carry-out port 2b (the carry-in port 2a is illustrated in FIG. 2) is formed on the glass substrate 3 passing through these openings.
- the opening width is adjusted so that the opening width adjusting member 8 disposed on the upper edge 2aa side is separated from the opening width adjusting member 9 disposed on the lower edge 2ab side. That is, the mutual distance A1 between the opening width adjusting member 8 disposed on the upper edge 2aa side and the upper surface of the glass substrate 3 is equal to the opening width adjusting member 9 disposed on the lower edge 2ab side and the lower surface of the glass substrate 3.
- the opening width is adjusted to be longer than the mutual distance A2.
- the length of the mutual distance A1 is twice or more than the length of the mutual distance A2.
- each of the pair of opening width adjusting members 8 and 9 moves in the vertical direction along the side wall portion 2c of the chamber 2 so that the vertical direction of the carry-in port 2a and the carry-out port 2b.
- this is not a limitation.
- each of the pair of opening width adjusting members 8 and 9 moves along the side wall portion 2c of the chamber 2 in a direction inclined with respect to the vertical direction, so that the vertical direction of the carry-in entrance 2a and the carry-out port 2b is met. It is good also as a structure which adjusts opening width.
- each of the pair of opening width adjusting members 8 and 9 is configured to move along the side wall 2c of the chamber 2, but is not limited thereto.
- each of the pair of opening width adjusting members 8 and 9 is configured to move so as to advance and retreat from the upper edge 2aa (2ba) and the lower edge 2ab (2bb) of the carry-in port 2a (carry-out port 2b). Also good.
- the operator operates the handle 12d to rotate the ball screw 12b, thereby moving the opening width adjusting member 8 (9). It is good also as a structure which moves the opening width adjustment member 8 (9) by rotating the ball screw 12b using power sources, such as.
- the opening width adjusting member 8 (9) is moved by the ball screw mechanism 12, but the present invention is not limited to this.
- the opening width adjusting member 8 (9) may be moved by a rack and pinion mechanism or the like.
- a processing device for performing an etching process by spraying a processing gas 5 onto a glass substrate 3 transported by a plurality of rollers 6 installed in the chamber 2. 13 is arranged.
- the processor 13 is installed at the bottom 2e of the chamber 2 so that a gap 14 is formed between the ceiling 2d of the chamber 2 and the lower surface of the glass substrate 3 carried into the processing region 4.
- a main body part 13 a arranged to face each other and a top plate part 13 b arranged to face the upper surface of the glass substrate 3 are provided.
- a processing space 15 for performing an etching process on the glass substrate 3 is formed between the main body portion 13a and the top plate portion 13b.
- the material of the main-body part 13a and the top-plate part 13b is polyvinyl chloride.
- the main body 13 a supplies the processing gas 5 sprayed to the lower surface of the glass substrate 3 to the processing space 15, and relatively supplies the processing path 15 with a supply path 13 aa provided on the upstream side of the transport path of the glass substrate 3. And a recovery path 13ab provided relatively downstream of the transport path of the glass substrate 3.
- the processing gas 5 supplied to the processing space 15 from the supply path 13aa is sprayed to the lower surface of the glass substrate 3, and then flows toward the downstream side of the transport path of the glass substrate 3, and the recovery path 13ab. Is recovered from the processing space 15.
- the main body 13a has a built-in heating member 13ac (for example, a heater or the like) that can heat the main body 13a in order to prevent the formation of condensation due to the processing gas 5.
- the supply path 13aa is formed by stacking five layers of the first structure 13ad to the fifth structure 13ah built in the main body 13a.
- a supply port 13ada for supplying the processing gas 5 to the first structure 13ad is formed in the first structure 13ad located in the lowermost layer.
- stacked on the 1st structure 13ae are piled up, and the branched flow path of the process gas 5 supplied from the supply port 13ada is formed.
- the second structural body 13ae and the third structural body 13af stacked above the second structural body 13ae are overlapped to form a branched flow path that further branches the branched flow path.
- a space 16 for joining the branched branch flow paths is formed, and a number of holes 17a for allowing the processing gas 5 to pass therethrough are formed.
- a perforated plate 17 in which is formed is attached.
- the fifth structure 13ah located in the uppermost layer is formed with an outlet (an outlet for the processing gas 5 in the supply path 13aa) for allowing the processing gas 5 to flow into the processing space 15.
- Both the outlet of the processing gas 5 in the supply path 13aa and the inlet of the processing gas 5 in the recovery path 13ab are formed in a slit shape that is long in the width direction.
- the width dimension of the outlet and the inlet is longer than the width dimension of the glass substrate 3.
- the outlet width of the processing gas 5 in the supply path 13aa has an opening width along the transport direction of the glass substrate 3 that is constant by the spacer 18 installed in the supply path 13aa. It is adjusted to become.
- a plurality of spacers 18 are installed along the width direction in a state of being separated from each other.
- a plurality of spacers 18 installed along the width direction may be set as a set of spacer groups, and the spacer groups may be installed over a plurality of upper and lower stages.
- the depth dimension B from the outlet of the processing gas 5 in the supply passage 13aa to the position where the spacer 18 is installed is in the range of 10 mm to 40 mm.
- the depth dimension from the outlet of the processing gas 5 to the position where the spacer group located at the uppermost stage is installed is within the range of 10 mm to 40 mm. It is preferable to do. If the depth dimension B is too small, the spacer 18 may disturb the flow of the processing gas 5 in the supply path 13aa, and may cause unevenness in the roughening of the lower surface of the glass substrate 3 due to the etching process.
- the depth dimension B is too large, it is difficult to adjust the opening width along the conveyance direction of the glass substrate 3 to a desired width at the outlet of the processing gas 5 in the supply path 13aa. Therefore, the supply amount of the processing gas 5 from the outlet to the processing space 15 may be excessive or excessive, and the lower surface of the glass substrate 3 may not be roughened to a desired surface roughness.
- the top plate portion 13 b is made of a single plate-like member and has a flat surface facing the upper surface of the glass substrate 3 carried into the processing region 4. Further, the top plate portion 13b has a built-in heating member 13ba (for example, a heater or the like) capable of heating the top plate portion 13b in order to prevent the formation of condensation due to the processing gas 5 in the same manner as the main body portion 13a. Has been.
- a built-in heating member 13ba for example, a heater or the like
- the processing gas 5 is prevented from leaking out of the chamber 2 upstream of the transport path of the glass substrate 3 with respect to the carry-in port 2a formed in the side wall 2c of the chamber 2.
- a shutter 19 is installed for this purpose.
- the shutter 19 same as said shutter 19 is installed also in the downstream of the conveyance path
- the shutter 19 includes a first member 19a disposed on the upper side across the conveyance path of the glass substrate 3, and a second member 19b disposed on the lower side. Both members 19a and 19b can move up and down between a standby position indicated by a solid line in FIG. 2 and an operating position indicated by a two-dot chain line.
- both the first member 19a and the second member 19b are in the standby position, the shutter 19 is in an open state, and the glass substrate 3 can be transported by passing between the members 19a and 19b. is there.
- both the first member 19a and the second member 19b are moved to the operating position, the distal end portion 19aa of the first member 19a and the distal end portion 19ba of the second member 19b are between each other 19aa and 19ba. They are in contact with each other without forming a gap, and the shutter 19 is closed.
- the gas is passed only through the carry-in port 2a (the carry-out port 2b) formed in the side wall 2c. Inflow to the space 20 and outflow from the space 20 are possible. As a result, even when the processing gas 5 is likely to leak out of the chamber 2 through the carry-in port 2a (the carry-out port 2b), the process gas 5 can be retained in the space 20.
- the glass substrate manufacturing apparatus 1 is operated, the conveyance of the glass substrate 3 by a plurality of rollers 6 is started, and the glass substrate 3 is carried into the chamber 2 from the carry-in port 2a. Thereafter, the glass substrate 3 is carried into the processing region 4.
- the processing gas 5 supplied to the processing space 15 from the supply path 13aa is transferred to the glass while the glass substrate 3 is transported in the processing space 15 formed in the processing unit 13. While spraying on the substrate 3 to perform the etching process, the processing gas 5 in the processing space 15 is recovered from the recovery path 13ab.
- the glass substrate 3 is unloaded from the processing region 4. Thereafter, the glass substrate 3 is carried out of the chamber 2 from the carry-out port 2b. Through the above steps, the glass substrate 3 subjected to the etching process is obtained.
- the pressure difference inside and outside the chamber 2 is measured by both barometers installed in the chamber 2 (in the space 7) and outside the chamber 2, respectively. Then, the operator operates the handle 12d on the basis of the measured pressure difference and moves the opening width adjusting member 8 (9) in the vertical direction, so that the upper and lower sides of the carry-in port 2a and the carry-out port 2b of the glass substrate 3 are moved up and down. Adjust the opening width along the direction.
- the size of the glass substrate 3 to be subjected to the etching process in this glass substrate manufacturing method is not limited to the size shown in FIG.
- the length of the glass substrate 3 along the transport direction is longer than the distance between the carry-in port 2a and the processing region 4 along the transport path and the distance between the process region 4 and the carry-out port 2b. It is good also considering the glass substrate 3 which has such a size as the object of an etching process.
- the glass substrate manufacturing apparatus 1 used for the manufacturing method of the glass substrate which concerns on 2nd embodiment of this invention uses the glass used for the manufacturing method of the glass substrate which concerns on said 1st embodiment.
- the difference from the substrate manufacturing apparatus 1 is that the configurations of the chamber 2 and the pair of opening width adjusting members 8 and 9 are different.
- the chamber 2 is provided with three ceiling holes 2f and a plate-like lid 2g for closing each of the ceiling holes 2f.
- the material of the lid 2g is polyvinyl chloride.
- the lid 2g can block the entire opening of the ceiling hole 2f, and can be attached to the chamber 2 and removed from the chamber 2.
- each of the pair of opening width adjusting members 8 and 9 is configured by a plate-shaped member, and a pair of long holes 8b (in the vertical direction for penetrating the bolts 8a (9a)) ( 9b) is formed.
- the material of the pair of opening width adjusting members 8 and 9 and the bolt 8a (9a) is polyvinyl chloride.
- bolt 8a (9a) is made into the side wall part 2c of the chamber 2.
- Opening widths along the vertical direction of the carry-in entrance 2a and the carry-out port 2b by fixing in the formed screw holes (not shown) and positioning the positions of the pair of opening width adjusting members 8, 9 in the vertical direction. It is possible to adjust.
- the adjustment of the opening width of the carry-in port 2a and the carry-out port 2b by the pair of opening width adjusting members 8 and 9 can be performed by an operator through the ceiling hole 2f by removing the lid 2g from the chamber 2. It has become.
- the opening width adjusting member 8 is made of glass even when the bolt 8a is loosened and the opening width adjusting member 8 falls downward due to its own weight. Adjustments are made so as not to obstruct the passage of the substrate 3 through the carry-in port 2a and the carry-out port 2b. More specifically, when the opening width adjusting member 8 is located at the lowest position, that is, when the bolt 8a is positioned at the upper end of the long hole 8b as shown in FIG. 6, the lower end portion of the opening width adjusting member 8 is the glass substrate.
- the fixing position of the bolt 8a (the formation position of the screw hole formed in the side wall 2c of the chamber 2) and the length along the vertical direction of the long hole 8b are adjusted so as to be positioned above the transfer path 3 Has been.
- the opening width adjusting member 8 cannot close the carry-in port 2a and the carry-out port 2b.
- the processing gas 5 leaks out of the chamber 2 in an emergency. Can be prevented.
- the glass substrate manufacturing method according to the second embodiment is different from the glass substrate manufacturing method according to the first embodiment in the vertical direction of the carry-in port 2a and the carry-out port 2b of the glass substrate 3.
- the aspect which adjusts the opening width along is different.
- the inside and outside of the chamber 2 are measured by both barometers installed in the chamber 2 (in the space 7) and outside the chamber 2, respectively. Measure the pressure difference. And when adjusting the opening width along the up-down direction of the carrying-in port 2a of the glass substrate 3 and the carrying-out port 2b based on the measured atmospheric
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Abstract
Description
はじめに、本発明の第一実施形態に係るガラス基板の製造方法に用いるガラス基板の製造装置について説明する。
以下、本発明の第二実施形態に係るガラス基板の製造方法について説明する。なお、この第二実施形態の説明において、上記の第一実施形態で既に説明した要素については、第二実施形態の説明で参照する図面に同一の符号を付すことで重複する説明を省略し、第一実施形態との相違点についてのみ説明する。
2a 搬入口
2aa 上縁
2ab 下縁
2b 搬出口
2ba 上縁
2bb 下縁
2d 天井部
2e 底部
3 ガラス基板
5 処理ガス
8 開口幅調節部材
9 開口幅調節部材
12 ボールネジ機構
12a 板材
12b ボールネジ
12c 回転軸
12d ハンドル
13 処理器
Claims (6)
- 搬入口からチャンバー内へと搬入したガラス基板を水平方向に搬送しつつ、前記チャンバー内での前記ガラス基板の搬送経路上に設けた処理領域で処理ガスによりエッチング処理を施した後、処理後の前記ガラス基板を搬出口から前記チャンバー外へと搬出するガラス基板の製造方法であって、
前記搬入口及び前記搬出口の各々における開口の上縁側と下縁側とでそれぞれ開口幅調節部材を移動させることで、前記搬入口及び前記搬出口の各々における上下方向に沿った開口幅を前記チャンバー内外の気圧差に基づいて調節することを特徴とするガラス基板の製造方法。 - 前記ガラス基板の下面に対して前記処理ガスを噴き付けると共に、
前記搬出口及び前記搬入口の各々について、これらの開口を通過中の前記ガラス基板に対して、前記上縁側に配置される前記開口幅調節部材が、前記下縁側に配置される前記開口幅調節部材よりも離間した状態となるように前記開口幅を調節することを特徴とする請求項1に記載のガラス基板の製造方法。 - 搬送方向に沿った前記ガラス基板の長さが、前記搬送経路に沿った前記搬入口と前記処理領域との相互間距離、及び、前記搬送経路に沿った前記処理領域と前記搬出口との相互間距離よりも長いことを特徴とする請求項2に記載のガラス基板の製造方法。
- 前記ガラス基板に対して前記処理ガスを噴き付けることでエッチング処理を施す処理器を、前記チャンバーの天井部との間に隙間が形成されるように前記チャンバーの底部に設置したことを特徴とする請求項2又は3に記載のガラス基板の製造方法。
- 前記チャンバー内外を貫通すると共に、前記開口幅調節部材を移動させるための移動機構を設け、
前記移動機構を介して前記チャンバー外での操作により前記開口幅調節部材を移動させることを特徴とする請求項1~4のいずれかに記載のガラス基板の製造方法。 - 前記開口幅調節部材として板状部材を用いることを特徴とする請求項1~5のいずれかに記載のガラス基板の製造方法。
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JP2007280885A (ja) * | 2006-04-11 | 2007-10-25 | Sharp Corp | プラズマ処理装置 |
JP2009194014A (ja) * | 2008-02-12 | 2009-08-27 | Sharp Corp | プロセス処理装置 |
JP2014125414A (ja) * | 2012-12-27 | 2014-07-07 | Nippon Electric Glass Co Ltd | 板状ガラスの表面処理装置及び表面処理方法 |
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