KR101272009B1 - 스퍼터링 장치, 스퍼터링 방법 및 전자 디바이스의 제조 방법 - Google Patents

스퍼터링 장치, 스퍼터링 방법 및 전자 디바이스의 제조 방법 Download PDF

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KR101272009B1
KR101272009B1 KR1020117014654A KR20117014654A KR101272009B1 KR 101272009 B1 KR101272009 B1 KR 101272009B1 KR 1020117014654 A KR1020117014654 A KR 1020117014654A KR 20117014654 A KR20117014654 A KR 20117014654A KR 101272009 B1 KR101272009 B1 KR 101272009B1
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substrate
cathode
power
sputtering
magnetic field
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KR20110089878A (ko
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토루 기따다
나오끼 와따나베
모또노부 나가이
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캐논 아네르바 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3476—Testing and control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Thin Magnetic Films (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
KR1020117014654A 2008-12-26 2009-12-25 스퍼터링 장치, 스퍼터링 방법 및 전자 디바이스의 제조 방법 Active KR101272009B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2008-333066 2008-12-26
JPJP-P-2008-333480 2008-12-26
JP2008333480 2008-12-26
JP2008333066 2008-12-26
PCT/JP2009/007278 WO2010073711A1 (ja) 2008-12-26 2009-12-25 スパッタリング装置、スパッタリング方法及び電子デバイスの製造方法

Related Child Applications (1)

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KR1020137002927A Division KR101271843B1 (ko) 2008-12-26 2009-12-25 스퍼터링 장치, 스퍼터링 방법 및 전자 디바이스의 제조 방법

Publications (2)

Publication Number Publication Date
KR20110089878A KR20110089878A (ko) 2011-08-09
KR101272009B1 true KR101272009B1 (ko) 2013-06-05

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KR1020117014654A Active KR101272009B1 (ko) 2008-12-26 2009-12-25 스퍼터링 장치, 스퍼터링 방법 및 전자 디바이스의 제조 방법
KR1020137002927A Active KR101271843B1 (ko) 2008-12-26 2009-12-25 스퍼터링 장치, 스퍼터링 방법 및 전자 디바이스의 제조 방법

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Country Status (6)

Country Link
US (1) US8906208B2 (enExample)
EP (1) EP2390380B1 (enExample)
JP (2) JP4739464B2 (enExample)
KR (2) KR101272009B1 (enExample)
CN (1) CN102227514B (enExample)
WO (1) WO2010073711A1 (enExample)

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WO2010038421A1 (ja) * 2008-09-30 2010-04-08 キヤノンアネルバ株式会社 スパッタリング装置及びスパッタリング方法
CN102227514B (zh) * 2008-12-26 2014-08-20 佳能安内华股份有限公司 溅射装置、溅射方法和电子器件制造方法
KR20140104045A (ko) * 2011-12-22 2014-08-27 캐논 아네르바 가부시키가이샤 SrRuO3 막 증착 방법
JP5806967B2 (ja) * 2012-03-30 2015-11-10 株式会社クボタ ディーゼルエンジンの排気処理装置
CN103374705B (zh) * 2012-04-11 2015-12-02 北京北方微电子基地设备工艺研究中心有限责任公司 一种磁控溅射装置
US20130327634A1 (en) * 2012-06-08 2013-12-12 Chang-Beom Eom Misaligned sputtering systems for the deposition of complex oxide thin films
WO2013189935A1 (en) * 2012-06-18 2013-12-27 Oc Oerlikon Balzers Ag Pvd apparatus for directional material deposition, methods and workpiece
JP2014046231A (ja) * 2012-08-29 2014-03-17 Hitachi Chemical Co Ltd カーボンナノチューブ合成用触媒の製造方法
KR101375878B1 (ko) * 2012-09-27 2014-03-17 한국생산기술연구원 미세패턴 형성 방법
US10048157B2 (en) * 2013-07-11 2018-08-14 Android Industries Llc Balancing device, uniformity device and methods for utilizing the same
CN103487311B (zh) * 2013-09-11 2016-04-13 广东省东莞市质量监督检测中心 一种湿浆样品置放装置及其控制方法
US10196734B2 (en) * 2014-03-25 2019-02-05 Iowa State University Research Foundation, Inc. Nanotwinned silver alloy film with controlled architecture
CN105112864B (zh) * 2015-08-13 2019-03-05 江苏时代全芯存储科技有限公司 镀膜装置
WO2017098537A1 (ja) * 2015-12-07 2017-06-15 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法および装置
US10431440B2 (en) 2015-12-20 2019-10-01 Applied Materials, Inc. Methods and apparatus for processing a substrate
JP6498261B1 (ja) * 2017-12-05 2019-04-10 昭和電工株式会社 磁気センサの製造方法及び磁気センサ集合体
JP7120857B2 (ja) * 2018-05-10 2022-08-17 株式会社アルバック 抵抗体膜の製造方法及び抵抗体膜
DE102019200761A1 (de) * 2019-01-22 2020-07-23 TRUMPF Hüttinger GmbH + Co. KG Verfahren zur Kompensation von Prozessschwankungen eines Plasmaprozesses und Regler für einen Leistungsgenerator zur Versorgung eines Plasmaprozesses
US11557473B2 (en) * 2019-04-19 2023-01-17 Applied Materials, Inc. System and method to control PVD deposition uniformity
TW202104628A (zh) 2019-04-19 2021-02-01 美商應用材料股份有限公司 用於控制pvd沉積均勻性的系統及方法
WO2020257965A1 (en) 2019-06-24 2020-12-30 Trumpf Huettinger (Shanghai) Co., Ltd. Method of adjusting the output power of a power supply supplying electrical power to a plasma, plasma apparatus and power supply
KR20210006725A (ko) * 2019-07-09 2021-01-19 삼성전자주식회사 스퍼터링 장치 및 이를 이용한 반도체 장치의 제조 방법
CN119843228A (zh) * 2019-08-19 2025-04-18 北京北方华创微电子装备有限公司 溅射方法

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JPH06207270A (ja) * 1993-01-07 1994-07-26 Hitachi Ltd 磁性膜形成装置
JPH0969460A (ja) * 1995-09-01 1997-03-11 Kao Corp 磁気記録媒体の製造方法
JP2002069631A (ja) 2000-08-24 2002-03-08 Hitachi Ltd スパッタ方法及びその装置
JP2002167661A (ja) 2000-11-30 2002-06-11 Anelva Corp 磁性多層膜作製装置

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WO2010038421A1 (ja) 2008-09-30 2010-04-08 キヤノンアネルバ株式会社 スパッタリング装置及びスパッタリング方法
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JPH06207270A (ja) * 1993-01-07 1994-07-26 Hitachi Ltd 磁性膜形成装置
JPH0969460A (ja) * 1995-09-01 1997-03-11 Kao Corp 磁気記録媒体の製造方法
JP2002069631A (ja) 2000-08-24 2002-03-08 Hitachi Ltd スパッタ方法及びその装置
JP2002167661A (ja) 2000-11-30 2002-06-11 Anelva Corp 磁性多層膜作製装置

Also Published As

Publication number Publication date
CN102227514A (zh) 2011-10-26
EP2390380A4 (en) 2014-01-08
KR101271843B1 (ko) 2013-06-07
JP5587822B2 (ja) 2014-09-10
US8906208B2 (en) 2014-12-09
WO2010073711A1 (ja) 2010-07-01
JP2011149104A (ja) 2011-08-04
EP2390380B1 (en) 2016-03-09
CN102227514B (zh) 2014-08-20
JP4739464B2 (ja) 2011-08-03
US20110209986A1 (en) 2011-09-01
EP2390380A1 (en) 2011-11-30
KR20110089878A (ko) 2011-08-09
JPWO2010073711A1 (ja) 2012-06-14
KR20130019035A (ko) 2013-02-25

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