JP4739464B2 - スパッタリング装置、スパッタリング方法及び電子デバイスの製造方法 - Google Patents

スパッタリング装置、スパッタリング方法及び電子デバイスの製造方法 Download PDF

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Publication number
JP4739464B2
JP4739464B2 JP2010522884A JP2010522884A JP4739464B2 JP 4739464 B2 JP4739464 B2 JP 4739464B2 JP 2010522884 A JP2010522884 A JP 2010522884A JP 2010522884 A JP2010522884 A JP 2010522884A JP 4739464 B2 JP4739464 B2 JP 4739464B2
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Prior art keywords
substrate
cathode
power
sputtering
processing surface
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English (en)
Japanese (ja)
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JPWO2010073711A1 (ja
Inventor
亨 北田
直樹 渡辺
基将 長井
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Canon Anelva Corp
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Canon Anelva Corp
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3476—Testing and control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
JP2010522884A 2008-12-26 2009-12-25 スパッタリング装置、スパッタリング方法及び電子デバイスの製造方法 Active JP4739464B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010522884A JP4739464B2 (ja) 2008-12-26 2009-12-25 スパッタリング装置、スパッタリング方法及び電子デバイスの製造方法

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2008333066 2008-12-26
JP2008333066 2008-12-26
JP2008333480 2008-12-26
JP2008333480 2008-12-26
JP2010522884A JP4739464B2 (ja) 2008-12-26 2009-12-25 スパッタリング装置、スパッタリング方法及び電子デバイスの製造方法
PCT/JP2009/007278 WO2010073711A1 (ja) 2008-12-26 2009-12-25 スパッタリング装置、スパッタリング方法及び電子デバイスの製造方法

Related Child Applications (1)

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JP4739464B2 true JP4739464B2 (ja) 2011-08-03
JPWO2010073711A1 JPWO2010073711A1 (ja) 2012-06-14

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JP2011097548A Active JP5587822B2 (ja) 2008-12-26 2011-04-25 スパッタリング装置、スパッタリング方法及び電子デバイスの製造方法

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Country Status (6)

Country Link
US (1) US8906208B2 (enExample)
EP (1) EP2390380B1 (enExample)
JP (2) JP4739464B2 (enExample)
KR (2) KR101271843B1 (enExample)
CN (1) CN102227514B (enExample)
WO (1) WO2010073711A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011149104A (ja) * 2008-12-26 2011-08-04 Canon Anelva Corp スパッタリング装置、スパッタリング方法及び電子デバイスの製造方法
WO2017098537A1 (ja) * 2015-12-07 2017-06-15 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法および装置

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US8968538B2 (en) * 2008-09-30 2015-03-03 Canon Anelva Corporation Sputtering device and sputtering method
WO2013094171A1 (ja) * 2011-12-22 2013-06-27 キヤノンアネルバ株式会社 ＳｒＲｕＯ３膜の成膜方法
JP5806967B2 (ja) * 2012-03-30 2015-11-10 株式会社クボタ ディーゼルエンジンの排気処理装置
CN103374705B (zh) * 2012-04-11 2015-12-02 北京北方微电子基地设备工艺研究中心有限责任公司 一种磁控溅射装置
US20130327634A1 (en) * 2012-06-08 2013-12-12 Chang-Beom Eom Misaligned sputtering systems for the deposition of complex oxide thin films
US20150114826A1 (en) * 2012-06-18 2015-04-30 Oerlikon Advanced Technologies Ag Pvd apparatus for directional material deposition, methods and workpiece
JP2014046231A (ja) * 2012-08-29 2014-03-17 Hitachi Chemical Co Ltd カーボンナノチューブ合成用触媒の製造方法
KR101375878B1 (ko) * 2012-09-27 2014-03-17 한국생산기술연구원 미세패턴 형성 방법
TR201906283T4 (tr) * 2013-07-11 2019-05-21 Android Ind Llc Dengeleme cihazı, düzgünlük cihazı ve bunlardan faydalanmak için yöntemler.
CN103487311B (zh) * 2013-09-11 2016-04-13 广东省东莞市质量监督检测中心 一种湿浆样品置放装置及其控制方法
US10196734B2 (en) * 2014-03-25 2019-02-05 Iowa State University Research Foundation, Inc. Nanotwinned silver alloy film with controlled architecture
CN105112864B (zh) * 2015-08-13 2019-03-05 江苏时代全芯存储科技有限公司 镀膜装置
US10431440B2 (en) 2015-12-20 2019-10-01 Applied Materials, Inc. Methods and apparatus for processing a substrate
JP6498261B1 (ja) * 2017-12-05 2019-04-10 昭和電工株式会社 磁気センサの製造方法及び磁気センサ集合体
JP7120857B2 (ja) * 2018-05-10 2022-08-17 株式会社アルバック 抵抗体膜の製造方法及び抵抗体膜
DE102019200761A1 (de) * 2019-01-22 2020-07-23 TRUMPF Hüttinger GmbH + Co. KG Verfahren zur Kompensation von Prozessschwankungen eines Plasmaprozesses und Regler für einen Leistungsgenerator zur Versorgung eines Plasmaprozesses
TW202104628A (zh) 2019-04-19 2021-02-01 美商應用材料股份有限公司 用於控制pvd沉積均勻性的系統及方法
US11557473B2 (en) * 2019-04-19 2023-01-17 Applied Materials, Inc. System and method to control PVD deposition uniformity
WO2020257965A1 (en) 2019-06-24 2020-12-30 Trumpf Huettinger (Shanghai) Co., Ltd. Method of adjusting the output power of a power supply supplying electrical power to a plasma, plasma apparatus and power supply
KR102923867B1 (ko) * 2019-07-09 2026-02-04 삼성전자주식회사 스퍼터링 장치 및 이를 이용한 반도체 장치의 제조 방법
CN110344013B (zh) * 2019-08-19 2025-05-23 北京北方华创微电子装备有限公司 溅射方法
WO2026022386A1 (de) * 2024-07-25 2026-01-29 Fhr Anlagenbau Gmbh Vakuumbeschichtungsanlage mit mehreren quellenanordnungen

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JPS61250163A (ja) * 1985-04-26 1986-11-07 Nippon Telegr & Teleph Corp <Ntt> 多層薄膜の製造方法および装置
JPH06207270A (ja) * 1993-01-07 1994-07-26 Hitachi Ltd 磁性膜形成装置
JPH0969460A (ja) * 1995-09-01 1997-03-11 Kao Corp 磁気記録媒体の製造方法
JP2002069661A (ja) * 2000-08-30 2002-03-08 Nikko Materials Co Ltd 銅の表面処理方法
JP2002069631A (ja) * 2000-08-24 2002-03-08 Hitachi Ltd スパッタ方法及びその装置
JP2002167661A (ja) * 2000-11-30 2002-06-11 Anelva Corp 磁性多層膜作製装置

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JP5209717B2 (ja) 2008-06-25 2013-06-12 キヤノンアネルバ株式会社 スパッタリング装置及びその制御用プログラムを記録した記録媒体
US8968538B2 (en) 2008-09-30 2015-03-03 Canon Anelva Corporation Sputtering device and sputtering method
CN102227514B (zh) * 2008-12-26 2014-08-20 佳能安内华股份有限公司 溅射装置、溅射方法和电子器件制造方法

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JPS61250163A (ja) * 1985-04-26 1986-11-07 Nippon Telegr & Teleph Corp <Ntt> 多層薄膜の製造方法および装置
JPH06207270A (ja) * 1993-01-07 1994-07-26 Hitachi Ltd 磁性膜形成装置
JPH0969460A (ja) * 1995-09-01 1997-03-11 Kao Corp 磁気記録媒体の製造方法
JP2002069631A (ja) * 2000-08-24 2002-03-08 Hitachi Ltd スパッタ方法及びその装置
JP2002069661A (ja) * 2000-08-30 2002-03-08 Nikko Materials Co Ltd 銅の表面処理方法
JP2002167661A (ja) * 2000-11-30 2002-06-11 Anelva Corp 磁性多層膜作製装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011149104A (ja) * 2008-12-26 2011-08-04 Canon Anelva Corp スパッタリング装置、スパッタリング方法及び電子デバイスの製造方法
WO2017098537A1 (ja) * 2015-12-07 2017-06-15 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法および装置

Also Published As

Publication number Publication date
KR20110089878A (ko) 2011-08-09
US8906208B2 (en) 2014-12-09
KR101272009B1 (ko) 2013-06-05
EP2390380A4 (en) 2014-01-08
KR20130019035A (ko) 2013-02-25
KR101271843B1 (ko) 2013-06-07
US20110209986A1 (en) 2011-09-01
EP2390380B1 (en) 2016-03-09
EP2390380A1 (en) 2011-11-30
JP5587822B2 (ja) 2014-09-10
CN102227514B (zh) 2014-08-20
WO2010073711A1 (ja) 2010-07-01
JPWO2010073711A1 (ja) 2012-06-14
JP2011149104A (ja) 2011-08-04
CN102227514A (zh) 2011-10-26

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